位置:首页 > IC中文资料第6580页 > P03N60

型号 功能描述 生产厂家 企业 LOGO 操作
P03N60

P03N60 TO-220 Small Signal MOSFET

文件:206.91 Kbytes Page:2 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

LightMOS Power Transistor

LightMOS Power Transistor • New high voltage technology designed for ZVS-switching in lamp ballasts • IGBT with integrated reverse diode • 4A current rating for reverse diode • Up to 10 times lower gate capacitance than MOSFET • Avalanche rated • 150°C operating temperature • FullPak is

INFINEON

英飞凌

LightMOS Power Transistor

LightMOS Power Transistor • New high voltage technology designed for ZVS-switching in lamp ballasts • IGBT with integrated reverse diode • 4A current rating for reverse diode • Up to 10 times lower gate capacitance than MOSFET • Avalanche rated • 150°C operating temperature • FullPak is

INFINEON

英飞凌

LightMOS Power Transistor

LightMOS Power Transistor • New high voltage technology designed for ZVS-switching in lamp ballasts • IGBT with integrated reverse diode • 4A current rating for reverse diode • Up to 10 times lower gate capacitance than MOSFET • Avalanche rated • 150°C operating temperature • FullPak is

INFINEON

英飞凌

LightMOS Power Transistor

LightMOS Power Transistor • New high voltage technology designed for ZVS-switching in lamp ballasts • IGBT with integrated reverse diode • 4A current rating for reverse diode • Up to 10 times lower gate capacitance than MOSFET • Avalanche rated • 150°C operating temperature • FullPak is

INFINEON

英飞凌

P03N60产品属性

  • 类型

    描述

  • 型号

    P03N60

  • 功能描述

    P03N60 TO-220 Small Signal MOSFET

P03N60数据表相关新闻