丝印代码：NCE6005AR；NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE6005AR uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS=60V,ID=5A RDS(ON)

丝印代码：NCE6005AS；NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE6005AS uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS=60V,ID=5A RDS(ON)

丝印代码：NCE6009XS；NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE6009XS uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS = 60V,ID =9A RDS(ON)

丝印代码：NCE6005AR；LCE N-Channel Enhancement Mode Power MOSFET

文件：1.12868 Mbytes Page：6 Pages

丝印代码：NCE6005AS；LCE N-Channel Enhancement Mode Power MOSFET

文件：948.6 Kbytes Page：6 Pages

丝印代码：NCE6005AS；LCE N-Channel Enhancement Mode Power MOSFET

文件：949.05 Kbytes Page：6 Pages

丝印代码：NCE6005AR；N-Channel Enhancement Mode Power MOSFET

文件：1.14303 Mbytes Page：6 Pages

丝印代码：6003X；NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE6003 uses advanced trench technology to provide excellent RDS(ON), low gate charge. This device is suitable for use as a Battery protection or in other switching application. General Features ● VDS =60V,ID =3A RDS(ON)

N-Channel 60-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Available • TrenchFET® Power MOSFET • 100 Rg Tested • 100 UIS Tested APPLICATIONS • Battery Switch • DC/DC Converter

丝印代码：6003M；NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE6003M uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other switching application. General Feature ● VDS =60V,ID =3.0A RDS(ON)

丝印代码：6003X；NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE6003X uses advanced trench technology to provide excellent RDS(ON), low gate charge. This device is suitable for use as a Battery protection or in other switching application. General Features ● VDS =60V,ID =3A RDS(ON)

丝印代码：6003XM；NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE6003XM uses advanced trench technology to provide excellent RDS(ON), low gate charge. This device is suitable for use as a Battery protection or in other switching application. General Features ● VDS =60V,ID =3A RDS(ON)

丝印代码：6003XY；NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE6003XY uses advanced trench technology to provide excellent RDS(ON), low gate charge. This device is suitable for use as a Battery protection or in other switching application. General Features ● VDS =60V,ID =3A RDS(ON)

N-Channel 60-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Available • TrenchFET® Power MOSFET • 100 Rg Tested • 100 UIS Tested APPLICATIONS • Battery Switch • DC/DC Converter

NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE6004 uses advanced trench technology to provide excellent RDS(ON), low gate charge. This device is suitable for use as a Battery protection or in other switching application. General Features ● VDS =60V,ID =4A RDS(ON)

丝印代码：6005AN；NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE6005AN uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS=60V,ID=5A RDS(ON)

丝印代码：6007；NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE6007S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =60V,ID =7A RDS(ON)

丝印代码：6003M；LCE N-Channel Enhancement Mode Power MOSFET

文件：994.89 Kbytes Page：6 Pages

12-200V N-Channel Trench MOSFET

12-200V N-Channel Trench MOSFET

12-200V N-Channel Trench MOSFET

NCE N-Channel Enhancement Mode Power MOSFET

文件：293.66 Kbytes Page：7 Pages

N-Channel 60-V (D-S) MOSFET

文件：990.28 Kbytes Page：6 Pages

Dual N-Channel 60 V (D-S) 175 째C MOSFET

文件：1.09197 Mbytes Page：9 Pages

P-Channel 60-V (D-S) MOSFET

文件：951.87 Kbytes Page：7 Pages

NCE N-Channel Enhancement Mode Power MOSFET

文件：307.94 Kbytes Page：7 Pages

Dual N-Channel 60 V (D-S) 175 째C MOSFET

文件：1.08885 Mbytes Page：9 Pages

NCE N-Channel Enhancement Mode Power MOSFET

文件：420.31 Kbytes Page：7 Pages

NCE N-Channel Enhancement Mode Power MOSFET

文件：421.91 Kbytes Page：7 Pages

N-Channel 60-V (D-S) MOSFET

文件：996.32 Kbytes Page：9 Pages

NCE N-Channel Enhancement Mode Power MOSFET

文件：415.31 Kbytes Page：7 Pages

丝印代码：LCE6008AS；LCE N-Channel Enhancement Mode Power MOSFET

文件：1.08484 Mbytes Page：6 Pages

N-Channel 60-V (D-S) MOSFET

文件：996.13 Kbytes Page：9 Pages

NCE N-Channel Enhancement Mode Power MOSFET

文件：429.44 Kbytes Page：7 Pages

HIGH CURRENT PLASTIC SILICON RECTIFIER(VOLTAGE - 50 to 1000 Volts CURRENT - 6.0 Amperes)

VOLTAGE 50 to1000 Volts CURRENT 6.0 Amperes FEATURES • Plastic package has Underwriters Laboratories Flammability Classification 94V-O utilizing Flame Retardant Epoxy Molding Compound. • High current capability. • Exceeds environmental standards of MIL-S-19500/228 • Low leakage. • In complia

HIGH CURRENT PLASTIC SILICON RECTIFIER(VOLTAGE - 50 to 1000 Volts CURRENT - 6.0 Amperes)

VOLTAGE 50 to1000 Volts CURRENT 6.0 Amperes FEATURES • Plastic package has Underwriters Laboratories Flammability Classification 94V-O utilizing Flame Retardant Epoxy Molding Compound. • High current capability. • Exceeds environmental standards of MIL-S-19500/228 • Low leakage. • In complia

GLASS PASSIVATED JUNCTION PLASTIC RECTIFIER(VOLTAGE - 50 to 800 Volts CURRENT - 6.0 Amperes)

FEATURES • High surge current capability. • Plastic package has Underwriters Laboratory Flammability Classification 94V-O utilizing Flame Retardant Epoxy Molding Compound. • Exceeds environmental standards of MIL-S-19500/228 • In compliance with EU RoHS 2002/95/EC directives

GLASS PASSIVATED JUNCTION PLASTIC RECTIFIER(VOLTAGE - 50 to 800 Volts CURRENT - 6.0 Amperes)

FEATURES • High surge current capability. • Plastic package has Underwriters Laboratory Flammability Classification 94V-O utilizing Flame Retardant Epoxy Molding Compound. • Exceeds environmental standards of MIL-S-19500/228 • In compliance with EU RoHS 2002/95/EC directives

HIGH POWER SWITCHING USE NON-INSULATED TYPE

HIGH POWER SWITCHING USE NON-INSULATED TYPE • IC Collector current ........................ 600A • VCEX Collector-emitter voltage ........... 350V • hFE DC current gain............................. 500 • Non-Insulated Type APPLICATION Robotics, Forklifts, Welders