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型号	功能描述	生产厂家企业	LOGO
NCE6003	NCE N-Channel Enhancement Mode Power MOSFET Description The NCE6003 uses advanced trench technology to provide excellent RDS(ON), low gate charge. This device is suitable for use as a Battery protection or in other switching application. General Features ● VDS =60V,ID =3A RDS(ON)	NCEPOWER 新洁能	NCEPOWER
NCE6003	N-Channel 60-V (D-S) MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Available • TrenchFET® Power MOSFET • 100 Rg Tested • 100 UIS Tested APPLICATIONS • Battery Switch • DC/DC Converter	VBSEMI 微碧半导体	VBSEMI
NCE6003M	NCE N-Channel Enhancement Mode Power MOSFET Description The NCE6003M uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other switching application. General Feature ● VDS =60V,ID =3.0A RDS(ON)	NCEPOWER 新洁能	NCEPOWER
NCE6003X	NCE N-Channel Enhancement Mode Power MOSFET Description The NCE6003X uses advanced trench technology to provide excellent RDS(ON), low gate charge. This device is suitable for use as a Battery protection or in other switching application. General Features ● VDS =60V,ID =3A RDS(ON)	NCEPOWER 新洁能	NCEPOWER
NCE6003XM	NCE N-Channel Enhancement Mode Power MOSFET Description The NCE6003XM uses advanced trench technology to provide excellent RDS(ON), low gate charge. This device is suitable for use as a Battery protection or in other switching application. General Features ● VDS =60V,ID =3A RDS(ON)	NCEPOWER 新洁能	NCEPOWER
NCE6003XY	NCE N-Channel Enhancement Mode Power MOSFET Description The NCE6003XY uses advanced trench technology to provide excellent RDS(ON), low gate charge. This device is suitable for use as a Battery protection or in other switching application. General Features ● VDS =60V,ID =3A RDS(ON)	NCEPOWER 新洁能	NCEPOWER
NCE6003Y	N-Channel 60-V (D-S) MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Available • TrenchFET® Power MOSFET • 100 Rg Tested • 100 UIS Tested APPLICATIONS • Battery Switch • DC/DC Converter	VBSEMI 微碧半导体	VBSEMI
NCE6004	NCE N-Channel Enhancement Mode Power MOSFET Description The NCE6004 uses advanced trench technology to provide excellent RDS(ON), low gate charge. This device is suitable for use as a Battery protection or in other switching application. General Features ● VDS =60V,ID =4A RDS(ON)	NCEPOWER 新洁能	NCEPOWER
NCE6005AN	NCE N-Channel Enhancement Mode Power MOSFET Description The NCE6005AN uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS=60V,ID=5A RDS(ON)	NCEPOWER 新洁能	NCEPOWER
NCE6005AR	NCE N-Channel Enhancement Mode Power MOSFET Description The NCE6005AR uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS=60V,ID=5A RDS(ON)	NCEPOWER 新洁能	NCEPOWER
NCE6005AS	NCE N-Channel Enhancement Mode Power MOSFET Description The NCE6005AS uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS=60V,ID=5A RDS(ON)	NCEPOWER 新洁能	NCEPOWER
NCE6007S	NCE N-Channel Enhancement Mode Power MOSFET Description The NCE6007S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =60V,ID =7A RDS(ON)	NCEPOWER 新洁能	NCEPOWER
NCE6009XS	NCE N-Channel Enhancement Mode Power MOSFET Description The NCE6009XS uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS = 60V,ID =9A RDS(ON)	NCEPOWER 新洁能	NCEPOWER
NCE6003M	12-200V N-Channel Trench MOSFET	NCEPOWER 新洁能	NCEPOWER
NCE6003M	LCE N-Channel Enhancement Mode Power MOSFET 文件：994.89 Kbytes Page：6 Pages	LEIDITECH 雷卯电子	LEIDITECH
NCE6003X	12-200V N-Channel Trench MOSFET	NCEPOWER 新洁能	NCEPOWER
NCE6003XM	12-200V N-Channel Trench MOSFET	NCEPOWER 新洁能	NCEPOWER
NCE6003Y	NCE N-Channel Enhancement Mode Power MOSFET 文件：293.66 Kbytes Page：7 Pages	NCEPOWER 新洁能	NCEPOWER
NCE6005AR	N-Channel 60-V (D-S) MOSFET 文件：990.28 Kbytes Page：6 Pages	VBSEMI 微碧半导体	VBSEMI
NCE6005AS	Dual N-Channel 60 V (D-S) 175 째C MOSFET 文件：1.09197 Mbytes Page：9 Pages	VBSEMI 微碧半导体	VBSEMI
NCE6005R	P-Channel 60-V (D-S) MOSFET 文件：951.87 Kbytes Page：7 Pages	VBSEMI 微碧半导体	VBSEMI
NCE6005R	NCE N-Channel Enhancement Mode Power MOSFET 文件：307.94 Kbytes Page：7 Pages	NCEPOWER 新洁能	NCEPOWER
NCE6005S	NCE N-Channel Enhancement Mode Power MOSFET 文件：420.31 Kbytes Page：7 Pages	NCEPOWER 新洁能	NCEPOWER
NCE6005S	Dual N-Channel 60 V (D-S) 175 째C MOSFET 文件：1.08885 Mbytes Page：9 Pages	VBSEMI 微碧半导体	VBSEMI
NCE6007AS	NCE N-Channel Enhancement Mode Power MOSFET 文件：421.91 Kbytes Page：7 Pages	NCEPOWER 新洁能	NCEPOWER
NCE6008AS	NCE N-Channel Enhancement Mode Power MOSFET 文件：415.31 Kbytes Page：7 Pages	NCEPOWER 新洁能	NCEPOWER
NCE6008AS	N-Channel 60-V (D-S) MOSFET 文件：996.32 Kbytes Page：9 Pages	VBSEMI 微碧半导体	VBSEMI
NCE6008AS	LCE N-Channel Enhancement Mode Power MOSFET 文件：1.08484 Mbytes Page：6 Pages	LEIDITECH 雷卯电子	LEIDITECH
NCE6009AS	NCE N-Channel Enhancement Mode Power MOSFET 文件：429.44 Kbytes Page：7 Pages	NCEPOWER 新洁能	NCEPOWER
NCE6009AS	N-Channel 60-V (D-S) MOSFET 文件：996.13 Kbytes Page：9 Pages	VBSEMI 微碧半导体	VBSEMI
600	JACK COVERS 文件：30.33 Kbytes Page：1 Pages	SWITCH	SWITCH
600	600 Series Analog Capacitance Manometers 文件：740.37 Kbytes Page：16 Pages	MKS	MKS
600	3M??Scotch짰 Transparent Film Tape 600 文件：572.08 Kbytes Page：6 Pages	3M	3M
600	SLIDE SWITCHES - MINIATURE 文件：218.76 Kbytes Page：2 Pages	E-SWITCH	E-SWITCH
600	Body cavity design provides additional clearance for component mounting 文件：816.87 Kbytes Page：1 Pages	ARIES	ARIES

NCE600供应商更多...

更新时间：2025-12-27 13:01:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市斌腾达科技有限公司	NCE6010J	NCE新洁能	21+	DFN2X2-6L	25000	进口原装!长期供应!绝对优势价格(诚信经营	询价
深圳市安富世纪电子有限公司	NCE6012AS	NCE	23+	SOP8	50000	全新原装正品现货,支持订货	询价
深圳市盈慧通电子有限公司	NCE6009XS	NCE/新洁能	2511	SOP-8	360000	电子元器件采购降本30%!原厂直采,砍掉中间差价	询价
洪芯国际半导体（深圳）有限公司	NCE6010J	NCE	25+	TO-252	86720	全新原装进口现货价格优惠本公司承诺原装正品假一赔	询价
深圳市中联芯电子有限公司	NCE6010J	NCE/新洁能	23+	DFN2X2-6L	12500	原装正品假一赔百	询价
深圳市威雅利发展有限公司	NCE6012AS	NCE(新洁能)	21+	SOP8	16000	一级代理,专注军工、汽车、医疗、工业、新能源、电力	询价
深圳市星辰微电科技有限公司	NCE6010J	NCE新洁能	22+	DFN2X2-6L	100000	新结能全线供应,支持终端生产	询价
深圳市嵩宏达科技有限公司	NCE6010J	NCE/新洁能	24+	DFN22-6	50000	全新原装,一手货源,全场热卖!	询价
艾睿（深圳）半导体有限公司	NCE6012AS	无锡新洁能	2447	SOP-8	105000	4000个/圆盘一级代理专营品牌!原装正品,优势现货,	询价
深圳市威尔健半导体有限公司	NCE6010JMOS(场效应管)	NCE/新洁能	23+	DFN2X2-6L	50000	全新原装正品现货,支持订货	询价

NCE600芯片相关品牌

NCE600规格书下载地址

NCE600参数引脚图相关

NCE600数据表相关新闻

NCE6005AS
全新原装 NCE6005AS SOP-8 60V/5A 双N沟道 MOS场效应管
2021-12-28
NCE6003
NCE6003
2021-10-8
NCE55P15I
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2021-8-6
NCE6005R
NCE6005R
2021-7-26
NCE5080K
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NCE55P04S
NCE55P04S，全新原装现货0755-82732291当天发货或门市自取. QQ：1755232575 /QQ：1157611585，微信号:87680558.
2021-2-15

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NCE600供应商更多...

NCE600芯片相关品牌

NCE600规格书下载地址

NCE600参数引脚图相关

NCE600数据表相关新闻

NCE6005AS

NCE6003

NCE55P15I

NCE6005R

NCE5080K

NCE55P04S

DdatasheetPDF页码索引