1-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, single level cell NAND flash memory

Features ■ NAND interface – x8 or x16 bus width – Multiplexed address/ data – Pinout compatibility for all densities ■ Supply voltage: 1.8 V/3 V ■ Page size – x8 device: (2048 + 64 spare) bytes – x16 device: (1024 + 32 spare) words ■ Block size – x8 device: (128K + 4K spare) bytes – x16

封装/外壳：63-TFBGA 包装：管件 描述：IC FLASH 1GBIT PARALLEL 63VFBGA 集成电路（IC） 存储器

IC FLASH 1G PARALLEL 63VFBGA

1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory

文件：711.53 Kbytes Page：62 Pages

1-Gbit, 2-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, NAND flash memory

文件：1.34162 Mbytes Page：60 Pages

1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory

文件：631.49 Kbytes Page：64 Pages

1-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, single level cell NAND flash memory

Features ■ NAND interface – x8 or x16 bus width – Multiplexed address/ data – Pinout compatibility for all densities ■ Supply voltage: 1.8 V/3 V ■ Page size – x8 device: (2048 + 64 spare) bytes – x16 device: (1024 + 32 spare) words ■ Block size – x8 device: (128K + 4K spare) bytes – x16