Ultra Fast Recovery Rectifier Diode Vrrm - 600 Volts, 1A

Features • Glass Passivated (GPP) • Ultra fast switching for high efficiency • Low leakage current • High forward surge capability • Solder dip 260°C, 40s • High current capability • Component in accordance to WEEE 2002/96/EC • Case style: DO-204AL (DO-41) molded plastic Description Re

封装/外壳：DO-204AL，DO-41，轴向 包装：卷带（TR）剪切带（CT） 描述：DIODE GEN PURP 600V 1A AXIAL 分立半导体产品 二极管 - 整流器 - 单

SWITCHMODE Power Rectifiers

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Glass Passivated Rectifier

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High Efficiency Rectifiers

SWITCHMODE Power Rectifiers

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1.0 Amp Glass Passivated Super Fast Recovery Rectifier 50 to 600 Volts

Features • Halogen free available upon request by adding suffix -HF • Super Fast Switching Speed For High Efficiency • Marking : Type Number • Epoxy meets UL 94 V-0 flammability rating • Moisture Sensitivity Level 1 • Lead Free Finish/RoHS Compliant (Note1) (PSuffix designates Compliant. See

1.0Amp glass passivated super fast recovery rectifier 50to600 volts

Features • High Surge Capability • Low Forward Voltage Drop • High Current Capability • Super Fast Switching Speed For High Efficiency

1.0 Amp Glass Passivated Super Fast Recovery Rectifier 50 to 600 Volts

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超快恢复二极管

封装/外壳：DO-204AL，DO-41，轴向 包装：卷带（TR）剪切带（CT） 描述：DIODE GEN PURP 600V 1A DO41 分立半导体产品 二极管 - 整流器 - 单

Axial Lead Rectifiers

Axial Lead Rectifiers . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low–voltage, high–frequency invert

MOSFET BROADBAND RF POWER FET

The RF MOSFET Line Power Field Effect Transistor N–Channel Enhancement–Mode MOSFET Designed primarily for wideband large–signal output and driver from 30–500 MHz. • Typical Performance at 400 MHz, 28 Vdc Output Power = 4.0 Watts Gain = 17 dB Efficiency = 50 • Excellent Thermal

500 mW DHD ZENER DIODE DO-35

DESCRIPTION NEC Type RD2.0E to RD200E Series are planar type zener diode in the popular DO-35 package with DHD (Double Heatsink Diode) construction having allowable power dissipation of 500 mW. To meet various application at customers, Vz (zener voltage) is classified into the tight tolerance und

MOSORB ZENER OVERVOLTAGE TRANSIENT SUPPRESSORS

The SA5.0A series is designed to protect voltage sensitive components from high voltage, high energy transients. They have excellent clamping capability, high surge capability, low zener impedance and fast response time. The SA5.0A series is supplied in Motorola’s exclusive, cost-effective, highly

POWER TRANSISTORS(10A,320-380V,125W)