TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on) = 0.230 OHM

TMOS V™ Power Field Effect Transistor P–Channel Enhancement–Mode Silicon Gate TMOS V is a new technology designed to achieve an on–resistance area product about one–half that of standard MOSFETs. This new technology more than doubles the present cell density of our 50 and 60 volt TMOS devi

TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on) = 0.230 OHM

TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on) = 0.230 OHM

TMOS V™ Power Field Effect Transistor P–Channel Enhancement–Mode Silicon Gate TMOS V is a new technology designed to achieve an on–resistance area product about one–half that of standard MOSFETs. This new technology more than doubles the present cell density of our 50 and 60 volt TMOS devi

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 12A@ TC=25℃ ·Drain Source Voltage -VDSS= 60V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.3Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on) = 0.3 OHM

TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on)= 0.3 OHM P–Channel Enhancement–Mode Silicon Gate This advanced TMOS E–FETis designed to with stand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain–to–source diode with a fast recovery t

TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on) = 0.230 OHM

TMOS V™ Power Field Effect Transistor P–Channel Enhancement–Mode Silicon Gate TMOS V is a new technology designed to achieve an on–resistance area product about one–half that of standard MOSFETs. This new technology more than doubles the present cell density of our 50 and 60 volt TMOS devi

P-Channel Enhancement Mode Field Effect Transistor

General Description This P-Channel MOSFET has been designed specifically for low voltage, high speed switching applications i.e. power supplies and power motor controls. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications.

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 12A@ TC=25℃ ·Drain Source Voltage -VDSS= 60V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.23Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

P-Channel 60-V (D-S) MOSFET

FEATURES • TrenchFET® Power MOSFET • 100 UIS Tested APPLICATIONS • Load Switch

TMOS E-FET™ Power Field Effect Transistor

P-Channel Enhancement Mode Power MOSFET

P-Channel Enhancement Mode Power MOSFET

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Power MOSFET

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Power MOSFET

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INFRARED IC INTERNAL INSPECTION SYSTEM

The C2955 is an IC internal inspection system incorporating an infrared microscope and an infrared CCD camera. Use of a newly developed infrared CCD camera enables a high sensitivity approximately ten times that of conventional systems (in comparisons by HAMAMATSU), at a wavelength of 1.0 µm, maki

Wire Connectors

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1500 MHz Center Frequency

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