General Description

This P-Channel MOSFET has been designed specifically for low voltage, high speed switching applications i.e. power supplies and power motor controls.

These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications.

Features

• -12 A, -60 V. RDS(ON) = 0.230 Ω @ VGS = -10 V

• Critical DC electrical parameters specified at elevated temperature.

• Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor.

• 175°C maximum junction temperature rating.