TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on) = 0.3 OHM

TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on)= 0.3 OHM P–Channel Enhancement–Mode Silicon Gate This advanced TMOS E–FETis designed to with stand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain–to–source diode with a fast recovery t

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 12A@ TC=25℃ ·Drain Source Voltage -VDSS= 60V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.3Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

TMOS E-FET™ Power Field Effect Transistor

POWER TRANSISTORS(15A)

2N3055A(NPN) MJ15015(NPN) MJ2955A(PNP) NJ15016(PNP)

POWER TRANSISTORS(10A,60V,75W)

COMPLEMENTARY SILICON POWER TRANSISTORS.

8-Bit Micro-controller

8-Bit Micro-controller with 16KB flash embedded

POWER TRANSISTORS(15A,60V,90W)

15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60 VOLTS 90 WATTS ..designed for use int general-purpose amplifier and switching application NPN -> TIP3055 PNP -> TIP2955

POWER TRANSISTORS(15A,50V,115W)

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