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MT48LC8M16A价格
参考价格：￥54.7724
型号：MT48LC8M16A2B4-6AAIT:LTR 品牌：MICRON 备注：这里有MT48LC8M16A多少钱，2025年最近7天走势，今日出价，今日竞价，MT48LC8M16A批发/采购报价，MT48LC8M16A行情走势销售排行榜，MT48LC8M16A报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
SYNCHRONOUS DRAM
| Micron 美光 |   | ||
SYNCHRONOUS DRAM General Description The 128Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 134,217,728 bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the x4’s 33,554,432- | Micron 美光 | | ||
SYNCHRONOUS DRAM General Description The 128Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 134,217,728 bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the x4’s 33,554,432- | Micron 美光 | | ||
SYNCHRONOUS DRAM General Description The 128Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 134,217,728 bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the x4’s 33,554,432- | Micron 美光 | | ||
SYNCHRONOUS DRAM General Description The 128Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 134,217,728 bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the x4’s 33,554,432- | Micron 美光 | | ||
SYNCHRONOUS DRAM General Description The 128Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 134,217,728 bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the x4’s 33,554,432- | Micron 美光 | | ||
SYNCHRONOUS DRAM General Description The 128Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 134,217,728 bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the x4’s 33,554,432- | Micron 美光 | | ||
SYNCHRONOUS DRAM General Description The 128Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 134,217,728 bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the x4’s 33,554,432- | Micron 美光 | | ||
SYNCHRONOUS DRAM General Description The 128Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 134,217,728 bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the x4’s 33,554,432- | Micron 美光 | | ||
SYNCHRONOUS DRAM General Description The 128Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 134,217,728 bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the x4’s 33,554,432- | Micron 美光 | | ||
SYNCHRONOUS DRAM General Description The 128Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 134,217,728 bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the x4’s 33,554,432- | Micron 美光 | | ||
SYNCHRONOUS DRAM General Description The 128Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 134,217,728 bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the x4’s 33,554,432- | Micron 美光 | | ||
SYNCHRONOUS DRAM General Description The 128Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 134,217,728 bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the x4’s 33,554,432- | Micron 美光 | | ||
SYNCHRONOUS DRAM General Description The 128Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 134,217,728 bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the x4’s 33,554,432- | Micron 美光 | | ||
SYNCHRONOUS DRAM General Description The 128Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 134,217,728 bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the x4’s 33,554,432- | Micron 美光 | | ||
SYNCHRONOUS DRAM General Description The 128Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 134,217,728 bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the x4’s 33,554,432- | Micron 美光 | | ||
SYNCHRONOUS DRAM General Description The 128Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 134,217,728 bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the x4’s 33,554,432- | Micron 美光 | | ||
SYNCHRONOUS DRAM General Description The 128Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 134,217,728 bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the x4’s 33,554,432- | Micron 美光 | | ||
SYNCHRONOUS DRAM General Description The 128Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 134,217,728 bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the x4’s 33,554,432- | Micron 美光 | | ||
SYNCHRONOUS DRAM General Description The 128Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 134,217,728 bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the x4’s 33,554,432- | Micron 美光 | | ||
SYNCHRONOUS DRAM General Description The 128Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 134,217,728 bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the x4’s 33,554,432- | Micron 美光 | | ||
SYNCHRONOUS DRAM General Description The 128Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 134,217,728 bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the x4’s 33,554,432- | Micron 美光 | | ||
SYNCHRONOUS DRAM General Description The 128Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 134,217,728 bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the x4’s 33,554,432- | Micron 美光 | | ||
SYNCHRONOUS DRAM General Description The 128Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 134,217,728 bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the x4’s 33,554,432- | Micron 美光 | | ||
SYNCHRONOUS DRAM General Description The 128Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 134,217,728 bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the x4’s 33,554,432- | Micron 美光 | | ||
SYNCHRONOUS DRAM General Description The 128Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 134,217,728 bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the x4’s 33,554,432- | Micron 美光 | | ||
SYNCHRONOUS DRAM General Description The 128Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 134,217,728 bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the x4’s 33,554,432- | Micron 美光 | | ||
SYNCHRONOUS DRAM
| Micron 美光 | | ||
SYNCHRONOUS DRAM General Description The 128Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 134,217,728 bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the x4’s 33,554,432- | Micron 美光 | | ||
SYNCHRONOUS DRAM General Description The 128Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 134,217,728 bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the x4’s 33,554,432- | Micron 美光 | | ||
SYNCHRONOUS DRAM General Description The 128Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 134,217,728 bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the x4’s 33,554,432- | Micron 美光 | | ||
SYNCHRONOUS DRAM General Description The 128Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 134,217,728 bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the x4’s 33,554,432- | Micron 美光 | | ||
SYNCHRONOUS DRAM General Description The 128Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 134,217,728 bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the x4’s 33,554,432- | Micron 美光 | | ||
SYNCHRONOUS DRAM General Description The 128Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 134,217,728 bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the x4’s 33,554,432- | Micron 美光 | | ||
SYNCHRONOUS DRAM General Description The 128Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 134,217,728 bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the x4’s 33,554,432- | Micron 美光 | | ||
SYNCHRONOUS DRAM General Description The 128Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 134,217,728 bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the x4’s 33,554,432- | Micron 美光 | | ||
SYNCHRONOUS DRAM General Description The 128Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 134,217,728 bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the x4’s 33,554,432- | Micron 美光 | | ||
SYNCHRONOUS DRAM General Description The 128Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 134,217,728 bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the x4’s 33,554,432- | Micron 美光 | | ||
SYNCHRONOUS DRAM General Description The 128Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 134,217,728 bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the x4’s 33,554,432- | Micron 美光 | | ||
SYNCHRONOUS DRAM General Description The 128Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 134,217,728 bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the x4’s 33,554,432- | Micron 美光 | | ||
SYNCHRONOUS DRAM General Description The 128Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 134,217,728 bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the x4’s 33,554,432- | Micron 美光 | | ||
SDRAM | Micron 美光 | | ||
SDRAM | Micron 美光 | | ||
SDRAM 128M X16 VFBGA | Micron 美光 | | ||
封装/外壳：54-VFBGA 包装：卷带（TR） 描述：IC DRAM 128MBIT PARALLEL 54VFBGA 集成电路（IC） 存储器 | ETC 知名厂家 | ETC | | |
封装/外壳：54-VFBGA 包装：托盘 描述：IC DRAM 128MBIT PARALLEL 54VFBGA 集成电路（IC） 存储器 | ETC 知名厂家 | ETC | | |
SYNCHRONOUS DRAM 文件：4.137859 Mbytes Page：55 Pages | Micron 美光 | | ||
SYNCHRONOUS DRAM 128Mb: x16, x32 MOBILE SDRAM FEATURES • Temperature Compensated Self Refresh (TCSR) • Fully synchronous; all signals registered on positive edge of system clock • Internal pipelined operation; column address can be changed every clock cycle • Internal banks for hiding row access/prech | Micron 美光 | |
MT48LC8M16A产品属性
- 类型
描述
- 型号
MT48LC8M16A
- 制造商
MICRON
- 制造商全称
Micron Technology
- 功能描述
SYNCHRONOUS DRAM
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
MT |
23+ |
TSOP54 |
20000 |
全新原装假一赔十 |
|||
MICROM |
23+ |
TSSOP |
12356 |
一级代理原厂VIP渠道,专注军工、汽车、医疗、工业、 |
|||
MICRON |
17+ |
TSOP54 |
667 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
MICRON/镁光 |
23+ |
TSOP54 |
25000 |
代理原装现货,假一赔十 |
|||
MICRON/美光 |
2447 |
TSOP |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
MICRON/美光 |
23+ |
TSOP54 |
50000 |
全新原装正品现货,支持订货 |
|||
micron(镁光) |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
|||
MICRON |
23+ |
TSOP |
8560 |
受权代理!全新原装现货特价热卖! |
|||
MICRON |
TSOP |
1211 |
正品原装--自家现货-实单可谈 |
||||
MICRON |
25+ |
TSOP54 |
2000 |
原厂原装,价格优势 |
MT48LC8M16A规格书下载地址
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MT48LC8M16A数据表相关新闻
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2024-9-20MT48LC8M16A2P-75IT:G 深圳旭亨半导体有限公司
MT48LC8M16A2P-75IT:G MICRON 原装现货 长期供应 QQ：2880524281
2021-4-22MT48LC8M16A2P-6AIT:L 深圳旭亨半导体有限公司
MT48LC8M16A2P-6AIT:L MICRON 原装现货 长期供应 QQ：2880524281
2021-4-22MT48LC8M16A2TG-75:G 深圳旭亨半导体有限公司
MT48LC8M16A2TG-75:G MICRON 原装现货 长期供应 QQ：2880524281
2021-4-22MT48LC4M32B2P-6:G 深圳旭亨半导体有限公司
MT48LC4M32B2P-6:G MICRON 原装现货长期供应 0755-23615656 / 185 6669 6862 QQ：2880524286
2021-4-22MT48LC4M16A2TG-7E:G
MT48LC4M16A2TG-7E:G
2020-6-8
DdatasheetPDF页码索引
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