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MT48LC8M16A价格
参考价格：￥54.7724
型号：MT48LC8M16A2B4-6AAIT:LTR 品牌：MICRON 备注：这里有MT48LC8M16A多少钱，2024年最近7天走势，今日出价，今日竞价，MT48LC8M16A批发/采购报价，MT48LC8M16A行情走势销售排行榜，MT48LC8M16A报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
SYNCHRONOUSDRAM
| MicronMicron Technology Inc. 镁光美国镁光科技有限公司 |  |   | |
SYNCHRONOUSDRAM GeneralDescription The128MbSDRAMisahigh-speedCMOS,dynamicrandom-accessmemorycontaining134,217,728bits.Itisinternallyconfiguredasaquad-bankDRAMwithasynchronousinterface(allsignalsareregisteredonthepositiveedgeoftheclocksignal,CLK).Eachofthex4’s33,554,432- | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | | |
SYNCHRONOUSDRAM GeneralDescription The128MbSDRAMisahigh-speedCMOS,dynamicrandom-accessmemorycontaining134,217,728bits.Itisinternallyconfiguredasaquad-bankDRAMwithasynchronousinterface(allsignalsareregisteredonthepositiveedgeoftheclocksignal,CLK).Eachofthex4’s33,554,432- | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | | |
SYNCHRONOUSDRAM GeneralDescription The128MbSDRAMisahigh-speedCMOS,dynamicrandom-accessmemorycontaining134,217,728bits.Itisinternallyconfiguredasaquad-bankDRAMwithasynchronousinterface(allsignalsareregisteredonthepositiveedgeoftheclocksignal,CLK).Eachofthex4’s33,554,432- | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | | |
SYNCHRONOUSDRAM GeneralDescription The128MbSDRAMisahigh-speedCMOS,dynamicrandom-accessmemorycontaining134,217,728bits.Itisinternallyconfiguredasaquad-bankDRAMwithasynchronousinterface(allsignalsareregisteredonthepositiveedgeoftheclocksignal,CLK).Eachofthex4’s33,554,432- | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | | |
SYNCHRONOUSDRAM GeneralDescription The128MbSDRAMisahigh-speedCMOS,dynamicrandom-accessmemorycontaining134,217,728bits.Itisinternallyconfiguredasaquad-bankDRAMwithasynchronousinterface(allsignalsareregisteredonthepositiveedgeoftheclocksignal,CLK).Eachofthex4’s33,554,432- | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | | |
SYNCHRONOUSDRAM GeneralDescription The128MbSDRAMisahigh-speedCMOS,dynamicrandom-accessmemorycontaining134,217,728bits.Itisinternallyconfiguredasaquad-bankDRAMwithasynchronousinterface(allsignalsareregisteredonthepositiveedgeoftheclocksignal,CLK).Eachofthex4’s33,554,432- | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | | |
SYNCHRONOUSDRAM GeneralDescription The128MbSDRAMisahigh-speedCMOS,dynamicrandom-accessmemorycontaining134,217,728bits.Itisinternallyconfiguredasaquad-bankDRAMwithasynchronousinterface(allsignalsareregisteredonthepositiveedgeoftheclocksignal,CLK).Eachofthex4’s33,554,432- | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | | |
SYNCHRONOUSDRAM GeneralDescription The128MbSDRAMisahigh-speedCMOS,dynamicrandom-accessmemorycontaining134,217,728bits.Itisinternallyconfiguredasaquad-bankDRAMwithasynchronousinterface(allsignalsareregisteredonthepositiveedgeoftheclocksignal,CLK).Eachofthex4’s33,554,432- | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | | |
SYNCHRONOUSDRAM GeneralDescription The128MbSDRAMisahigh-speedCMOS,dynamicrandom-accessmemorycontaining134,217,728bits.Itisinternallyconfiguredasaquad-bankDRAMwithasynchronousinterface(allsignalsareregisteredonthepositiveedgeoftheclocksignal,CLK).Eachofthex4’s33,554,432- | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | | |
SYNCHRONOUSDRAM GeneralDescription The128MbSDRAMisahigh-speedCMOS,dynamicrandom-accessmemorycontaining134,217,728bits.Itisinternallyconfiguredasaquad-bankDRAMwithasynchronousinterface(allsignalsareregisteredonthepositiveedgeoftheclocksignal,CLK).Eachofthex4’s33,554,432- | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | | |
SYNCHRONOUSDRAM GeneralDescription The128MbSDRAMisahigh-speedCMOS,dynamicrandom-accessmemorycontaining134,217,728bits.Itisinternallyconfiguredasaquad-bankDRAMwithasynchronousinterface(allsignalsareregisteredonthepositiveedgeoftheclocksignal,CLK).Eachofthex4’s33,554,432- | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | | |
SYNCHRONOUSDRAM GeneralDescription The128MbSDRAMisahigh-speedCMOS,dynamicrandom-accessmemorycontaining134,217,728bits.Itisinternallyconfiguredasaquad-bankDRAMwithasynchronousinterface(allsignalsareregisteredonthepositiveedgeoftheclocksignal,CLK).Eachofthex4’s33,554,432- | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | | |
SYNCHRONOUSDRAM GeneralDescription The128MbSDRAMisahigh-speedCMOS,dynamicrandom-accessmemorycontaining134,217,728bits.Itisinternallyconfiguredasaquad-bankDRAMwithasynchronousinterface(allsignalsareregisteredonthepositiveedgeoftheclocksignal,CLK).Eachofthex4’s33,554,432- | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | | |
SYNCHRONOUSDRAM GeneralDescription The128MbSDRAMisahigh-speedCMOS,dynamicrandom-accessmemorycontaining134,217,728bits.Itisinternallyconfiguredasaquad-bankDRAMwithasynchronousinterface(allsignalsareregisteredonthepositiveedgeoftheclocksignal,CLK).Eachofthex4’s33,554,432- | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | | |
SYNCHRONOUSDRAM GeneralDescription The128MbSDRAMisahigh-speedCMOS,dynamicrandom-accessmemorycontaining134,217,728bits.Itisinternallyconfiguredasaquad-bankDRAMwithasynchronousinterface(allsignalsareregisteredonthepositiveedgeoftheclocksignal,CLK).Eachofthex4’s33,554,432- | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | | |
SYNCHRONOUSDRAM GeneralDescription The128MbSDRAMisahigh-speedCMOS,dynamicrandom-accessmemorycontaining134,217,728bits.Itisinternallyconfiguredasaquad-bankDRAMwithasynchronousinterface(allsignalsareregisteredonthepositiveedgeoftheclocksignal,CLK).Eachofthex4’s33,554,432- | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | | |
SYNCHRONOUSDRAM GeneralDescription The128MbSDRAMisahigh-speedCMOS,dynamicrandom-accessmemorycontaining134,217,728bits.Itisinternallyconfiguredasaquad-bankDRAMwithasynchronousinterface(allsignalsareregisteredonthepositiveedgeoftheclocksignal,CLK).Eachofthex4’s33,554,432- | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | | |
SYNCHRONOUSDRAM GeneralDescription The128MbSDRAMisahigh-speedCMOS,dynamicrandom-accessmemorycontaining134,217,728bits.Itisinternallyconfiguredasaquad-bankDRAMwithasynchronousinterface(allsignalsareregisteredonthepositiveedgeoftheclocksignal,CLK).Eachofthex4’s33,554,432- | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | | |
SYNCHRONOUSDRAM GeneralDescription The128MbSDRAMisahigh-speedCMOS,dynamicrandom-accessmemorycontaining134,217,728bits.Itisinternallyconfiguredasaquad-bankDRAMwithasynchronousinterface(allsignalsareregisteredonthepositiveedgeoftheclocksignal,CLK).Eachofthex4’s33,554,432- | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | | |
SYNCHRONOUSDRAM GeneralDescription The128MbSDRAMisahigh-speedCMOS,dynamicrandom-accessmemorycontaining134,217,728bits.Itisinternallyconfiguredasaquad-bankDRAMwithasynchronousinterface(allsignalsareregisteredonthepositiveedgeoftheclocksignal,CLK).Eachofthex4’s33,554,432- | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | | |
SYNCHRONOUSDRAM GeneralDescription The128MbSDRAMisahigh-speedCMOS,dynamicrandom-accessmemorycontaining134,217,728bits.Itisinternallyconfiguredasaquad-bankDRAMwithasynchronousinterface(allsignalsareregisteredonthepositiveedgeoftheclocksignal,CLK).Eachofthex4’s33,554,432- | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | | |
SYNCHRONOUSDRAM GeneralDescription The128MbSDRAMisahigh-speedCMOS,dynamicrandom-accessmemorycontaining134,217,728bits.Itisinternallyconfiguredasaquad-bankDRAMwithasynchronousinterface(allsignalsareregisteredonthepositiveedgeoftheclocksignal,CLK).Eachofthex4’s33,554,432- | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | | |
SYNCHRONOUSDRAM GeneralDescription The128MbSDRAMisahigh-speedCMOS,dynamicrandom-accessmemorycontaining134,217,728bits.Itisinternallyconfiguredasaquad-bankDRAMwithasynchronousinterface(allsignalsareregisteredonthepositiveedgeoftheclocksignal,CLK).Eachofthex4’s33,554,432- | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | | |
SYNCHRONOUSDRAM GeneralDescription The128MbSDRAMisahigh-speedCMOS,dynamicrandom-accessmemorycontaining134,217,728bits.Itisinternallyconfiguredasaquad-bankDRAMwithasynchronousinterface(allsignalsareregisteredonthepositiveedgeoftheclocksignal,CLK).Eachofthex4’s33,554,432- | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | | |
SYNCHRONOUSDRAM GeneralDescription The128MbSDRAMisahigh-speedCMOS,dynamicrandom-accessmemorycontaining134,217,728bits.Itisinternallyconfiguredasaquad-bankDRAMwithasynchronousinterface(allsignalsareregisteredonthepositiveedgeoftheclocksignal,CLK).Eachofthex4’s33,554,432- | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | | |
SYNCHRONOUSDRAM GeneralDescription The128MbSDRAMisahigh-speedCMOS,dynamicrandom-accessmemorycontaining134,217,728bits.Itisinternallyconfiguredasaquad-bankDRAMwithasynchronousinterface(allsignalsareregisteredonthepositiveedgeoftheclocksignal,CLK).Eachofthex4’s33,554,432- | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | | |
SYNCHRONOUSDRAM
| MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | | |
SYNCHRONOUSDRAM GeneralDescription The128MbSDRAMisahigh-speedCMOS,dynamicrandom-accessmemorycontaining134,217,728bits.Itisinternallyconfiguredasaquad-bankDRAMwithasynchronousinterface(allsignalsareregisteredonthepositiveedgeoftheclocksignal,CLK).Eachofthex4’s33,554,432- | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | | |
SYNCHRONOUSDRAM GeneralDescription The128MbSDRAMisahigh-speedCMOS,dynamicrandom-accessmemorycontaining134,217,728bits.Itisinternallyconfiguredasaquad-bankDRAMwithasynchronousinterface(allsignalsareregisteredonthepositiveedgeoftheclocksignal,CLK).Eachofthex4’s33,554,432- | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | | |
SYNCHRONOUSDRAM GeneralDescription The128MbSDRAMisahigh-speedCMOS,dynamicrandom-accessmemorycontaining134,217,728bits.Itisinternallyconfiguredasaquad-bankDRAMwithasynchronousinterface(allsignalsareregisteredonthepositiveedgeoftheclocksignal,CLK).Eachofthex4’s33,554,432- | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | | |
SYNCHRONOUSDRAM GeneralDescription The128MbSDRAMisahigh-speedCMOS,dynamicrandom-accessmemorycontaining134,217,728bits.Itisinternallyconfiguredasaquad-bankDRAMwithasynchronousinterface(allsignalsareregisteredonthepositiveedgeoftheclocksignal,CLK).Eachofthex4’s33,554,432- | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | | |
SYNCHRONOUSDRAM GeneralDescription The128MbSDRAMisahigh-speedCMOS,dynamicrandom-accessmemorycontaining134,217,728bits.Itisinternallyconfiguredasaquad-bankDRAMwithasynchronousinterface(allsignalsareregisteredonthepositiveedgeoftheclocksignal,CLK).Eachofthex4’s33,554,432- | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | | |
SYNCHRONOUSDRAM GeneralDescription The128MbSDRAMisahigh-speedCMOS,dynamicrandom-accessmemorycontaining134,217,728bits.Itisinternallyconfiguredasaquad-bankDRAMwithasynchronousinterface(allsignalsareregisteredonthepositiveedgeoftheclocksignal,CLK).Eachofthex4’s33,554,432- | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | | |
SYNCHRONOUSDRAM GeneralDescription The128MbSDRAMisahigh-speedCMOS,dynamicrandom-accessmemorycontaining134,217,728bits.Itisinternallyconfiguredasaquad-bankDRAMwithasynchronousinterface(allsignalsareregisteredonthepositiveedgeoftheclocksignal,CLK).Eachofthex4’s33,554,432- | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | | |
SYNCHRONOUSDRAM GeneralDescription The128MbSDRAMisahigh-speedCMOS,dynamicrandom-accessmemorycontaining134,217,728bits.Itisinternallyconfiguredasaquad-bankDRAMwithasynchronousinterface(allsignalsareregisteredonthepositiveedgeoftheclocksignal,CLK).Eachofthex4’s33,554,432- | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | | |
SYNCHRONOUSDRAM GeneralDescription The128MbSDRAMisahigh-speedCMOS,dynamicrandom-accessmemorycontaining134,217,728bits.Itisinternallyconfiguredasaquad-bankDRAMwithasynchronousinterface(allsignalsareregisteredonthepositiveedgeoftheclocksignal,CLK).Eachofthex4’s33,554,432- | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | | |
SYNCHRONOUSDRAM GeneralDescription The128MbSDRAMisahigh-speedCMOS,dynamicrandom-accessmemorycontaining134,217,728bits.Itisinternallyconfiguredasaquad-bankDRAMwithasynchronousinterface(allsignalsareregisteredonthepositiveedgeoftheclocksignal,CLK).Eachofthex4’s33,554,432- | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | | |
SYNCHRONOUSDRAM GeneralDescription The128MbSDRAMisahigh-speedCMOS,dynamicrandom-accessmemorycontaining134,217,728bits.Itisinternallyconfiguredasaquad-bankDRAMwithasynchronousinterface(allsignalsareregisteredonthepositiveedgeoftheclocksignal,CLK).Eachofthex4’s33,554,432- | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | | |
SYNCHRONOUSDRAM GeneralDescription The128MbSDRAMisahigh-speedCMOS,dynamicrandom-accessmemorycontaining134,217,728bits.Itisinternallyconfiguredasaquad-bankDRAMwithasynchronousinterface(allsignalsareregisteredonthepositiveedgeoftheclocksignal,CLK).Eachofthex4’s33,554,432- | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | | |
SYNCHRONOUSDRAM GeneralDescription The128MbSDRAMisahigh-speedCMOS,dynamicrandom-accessmemorycontaining134,217,728bits.Itisinternallyconfiguredasaquad-bankDRAMwithasynchronousinterface(allsignalsareregisteredonthepositiveedgeoftheclocksignal,CLK).Eachofthex4’s33,554,432- | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | | |
封装/外壳：54-VFBGA 包装：卷带（TR） 描述：IC DRAM 128MBIT PARALLEL 54VFBGA 集成电路（IC） 存储器 | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | | |
封装/外壳：54-VFBGA 包装：托盘 描述：IC DRAM 128MBIT PARALLEL 54VFBGA 集成电路（IC） 存储器 | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | | |
SYNCHRONOUSDRAM 文件：4.137859 Mbytes Page：55 Pages | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | | |
SYNCHRONOUSDRAM 128Mb:x16,x32MOBILESDRAM FEATURES •TemperatureCompensatedSelfRefresh(TCSR) •Fullysynchronous;allsignalsregisteredonpositive edgeofsystemclock •Internalpipelinedoperation;columnaddresscanbe changedeveryclockcycle •Internalbanksforhidingrowaccess/prech | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | |
MT48LC8M16A产品属性
- 类型
描述
- 型号
MT48LC8M16A
- 制造商
MICRON
- 制造商全称
Micron Technology
- 功能描述
SYNCHRONOUS DRAM
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
MT |
0342+ |
TSOP54 |
2760 |
全新原装进口自己库存优势 |
|||
23+ |
TSOP54 |
20000 |
原厂原装正品现货 |
||||
MT |
23+ |
SOP8 |
18000 |
||||
MICRON |
2017+ |
TSOP |
6528 |
只做原装正品!假一赔十! |
|||
MT |
20+/21+ |
TSOP54 |
6956 |
全新原装进口 |
|||
MT |
17+ |
TSOP54 |
9988 |
只做原装进口,自己库存 |
|||
MICRON |
22+ |
TSOP |
2789 |
原装优势!绝对公司现货! |
|||
MICRON |
23+24 |
FBGA |
3980 |
主营原装存储,可编程逻辑微处理芯片 |
|||
MICRON/美光 |
2048+ |
TSSOP |
9852 |
只做原装正品现货!或订货假一赔十! |
|||
MICRON/镁光 |
23+ |
TSOP54 |
25000 |
代理原装现货,假一赔十 |
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MT48LC8M16A数据表相关新闻
MT48LC8M16A2P-75IT:G 深圳旭亨半导体有限公司
MT48LC8M16A2P-75IT:GMICRON原装现货长期供应QQ：2880524281
2021-4-22MT48LC8M16A2P-6AIT:L 深圳旭亨半导体有限公司
MT48LC8M16A2P-6AIT:LMICRON原装现货长期供应QQ：2880524281
2021-4-22MT48LC8M16A2TG-75:G 深圳旭亨半导体有限公司
MT48LC8M16A2TG-75:GMICRON原装现货长期供应QQ：2880524281
2021-4-22MT48LC4M16A2P-75:G 深圳旭亨半导体有限公司
MT48LC4M16A2P-75:GMICRON原装现货长期供应0755-23615656/18566696862QQ：2880524286
2021-4-22MT48LC4M32B2P-6:G 深圳旭亨半导体有限公司
MT48LC4M32B2P-6:GMICRON原装现货长期供应0755-23615656/18566696862QQ：2880524286
2021-4-22MT48LC4M16A2TG-7E:G
MT48LC4M16A2TG-7E:G
2020-6-8
DdatasheetPDF页码索引
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