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MT48LC8M16A2价格
参考价格：￥54.7724
型号：MT48LC8M16A2B4-6AAIT:LTR 品牌：MICRON 备注：这里有MT48LC8M16A2多少钱，2025年最近7天走势，今日出价，今日竞价，MT48LC8M16A2批发/采购报价，MT48LC8M16A2行情走势销售排行榜，MT48LC8M16A2报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
MT48LC8M16A2 | SYNCHRONOUSDRAM GeneralDescription The128MbSDRAMisahigh-speedCMOS,dynamicrandom-accessmemorycontaining134,217,728bits.Itisinternallyconfiguredasaquad-bankDRAMwithasynchronousinterface(allsignalsareregisteredonthepositiveedgeoftheclocksignal,CLK).Eachofthex4’s33,554,432- | MicronMicron Technology 镁光美国镁光科技有限公司 |  |   |
MT48LC8M16A2 | SYNCHRONOUSDRAM GeneralDescription The128MbSDRAMisahigh-speedCMOS,dynamicrandom-accessmemorycontaining134,217,728bits.Itisinternallyconfiguredasaquad-bankDRAMwithasynchronousinterface(allsignalsareregisteredonthepositiveedgeoftheclocksignal,CLK).Eachofthex4’s33,554,432- | MicronMicron Technology 镁光美国镁光科技有限公司 | | |
SYNCHRONOUSDRAM GeneralDescription The128MbSDRAMisahigh-speedCMOS,dynamicrandom-accessmemorycontaining134,217,728bits.Itisinternallyconfiguredasaquad-bankDRAMwithasynchronousinterface(allsignalsareregisteredonthepositiveedgeoftheclocksignal,CLK).Eachofthex4’s33,554,432- | MicronMicron Technology 镁光美国镁光科技有限公司 | | | |
SYNCHRONOUSDRAM GeneralDescription The128MbSDRAMisahigh-speedCMOS,dynamicrandom-accessmemorycontaining134,217,728bits.Itisinternallyconfiguredasaquad-bankDRAMwithasynchronousinterface(allsignalsareregisteredonthepositiveedgeoftheclocksignal,CLK).Eachofthex4’s33,554,432- | MicronMicron Technology 镁光美国镁光科技有限公司 | | | |
SYNCHRONOUSDRAM GeneralDescription The128MbSDRAMisahigh-speedCMOS,dynamicrandom-accessmemorycontaining134,217,728bits.Itisinternallyconfiguredasaquad-bankDRAMwithasynchronousinterface(allsignalsareregisteredonthepositiveedgeoftheclocksignal,CLK).Eachofthex4’s33,554,432- | MicronMicron Technology 镁光美国镁光科技有限公司 | | | |
SYNCHRONOUSDRAM GeneralDescription The128MbSDRAMisahigh-speedCMOS,dynamicrandom-accessmemorycontaining134,217,728bits.Itisinternallyconfiguredasaquad-bankDRAMwithasynchronousinterface(allsignalsareregisteredonthepositiveedgeoftheclocksignal,CLK).Eachofthex4’s33,554,432- | MicronMicron Technology 镁光美国镁光科技有限公司 | | | |
SYNCHRONOUSDRAM GeneralDescription The128MbSDRAMisahigh-speedCMOS,dynamicrandom-accessmemorycontaining134,217,728bits.Itisinternallyconfiguredasaquad-bankDRAMwithasynchronousinterface(allsignalsareregisteredonthepositiveedgeoftheclocksignal,CLK).Eachofthex4’s33,554,432- | MicronMicron Technology 镁光美国镁光科技有限公司 | | | |
SYNCHRONOUSDRAM GeneralDescription The128MbSDRAMisahigh-speedCMOS,dynamicrandom-accessmemorycontaining134,217,728bits.Itisinternallyconfiguredasaquad-bankDRAMwithasynchronousinterface(allsignalsareregisteredonthepositiveedgeoftheclocksignal,CLK).Eachofthex4’s33,554,432- | MicronMicron Technology 镁光美国镁光科技有限公司 | | | |
SYNCHRONOUSDRAM GeneralDescription The128MbSDRAMisahigh-speedCMOS,dynamicrandom-accessmemorycontaining134,217,728bits.Itisinternallyconfiguredasaquad-bankDRAMwithasynchronousinterface(allsignalsareregisteredonthepositiveedgeoftheclocksignal,CLK).Eachofthex4’s33,554,432- | MicronMicron Technology 镁光美国镁光科技有限公司 | | | |
SYNCHRONOUSDRAM GeneralDescription The128MbSDRAMisahigh-speedCMOS,dynamicrandom-accessmemorycontaining134,217,728bits.Itisinternallyconfiguredasaquad-bankDRAMwithasynchronousinterface(allsignalsareregisteredonthepositiveedgeoftheclocksignal,CLK).Eachofthex4’s33,554,432- | MicronMicron Technology 镁光美国镁光科技有限公司 | | | |
SYNCHRONOUSDRAM GeneralDescription The128MbSDRAMisahigh-speedCMOS,dynamicrandom-accessmemorycontaining134,217,728bits.Itisinternallyconfiguredasaquad-bankDRAMwithasynchronousinterface(allsignalsareregisteredonthepositiveedgeoftheclocksignal,CLK).Eachofthex4’s33,554,432- | MicronMicron Technology 镁光美国镁光科技有限公司 | | | |
SYNCHRONOUSDRAM GeneralDescription The128MbSDRAMisahigh-speedCMOS,dynamicrandom-accessmemorycontaining134,217,728bits.Itisinternallyconfiguredasaquad-bankDRAMwithasynchronousinterface(allsignalsareregisteredonthepositiveedgeoftheclocksignal,CLK).Eachofthex4’s33,554,432- | MicronMicron Technology 镁光美国镁光科技有限公司 | | | |
SYNCHRONOUSDRAM GeneralDescription The128MbSDRAMisahigh-speedCMOS,dynamicrandom-accessmemorycontaining134,217,728bits.Itisinternallyconfiguredasaquad-bankDRAMwithasynchronousinterface(allsignalsareregisteredonthepositiveedgeoftheclocksignal,CLK).Eachofthex4’s33,554,432- | MicronMicron Technology 镁光美国镁光科技有限公司 | | | |
SYNCHRONOUSDRAM GeneralDescription The128MbSDRAMisahigh-speedCMOS,dynamicrandom-accessmemorycontaining134,217,728bits.Itisinternallyconfiguredasaquad-bankDRAMwithasynchronousinterface(allsignalsareregisteredonthepositiveedgeoftheclocksignal,CLK).Eachofthex4’s33,554,432- | MicronMicron Technology 镁光美国镁光科技有限公司 | | | |
SYNCHRONOUSDRAM GeneralDescription The128MbSDRAMisahigh-speedCMOS,dynamicrandom-accessmemorycontaining134,217,728bits.Itisinternallyconfiguredasaquad-bankDRAMwithasynchronousinterface(allsignalsareregisteredonthepositiveedgeoftheclocksignal,CLK).Eachofthex4’s33,554,432- | MicronMicron Technology 镁光美国镁光科技有限公司 | | | |
SYNCHRONOUSDRAM GeneralDescription The128MbSDRAMisahigh-speedCMOS,dynamicrandom-accessmemorycontaining134,217,728bits.Itisinternallyconfiguredasaquad-bankDRAMwithasynchronousinterface(allsignalsareregisteredonthepositiveedgeoftheclocksignal,CLK).Eachofthex4’s33,554,432- | MicronMicron Technology 镁光美国镁光科技有限公司 | | | |
SYNCHRONOUSDRAM GeneralDescription The128MbSDRAMisahigh-speedCMOS,dynamicrandom-accessmemorycontaining134,217,728bits.Itisinternallyconfiguredasaquad-bankDRAMwithasynchronousinterface(allsignalsareregisteredonthepositiveedgeoftheclocksignal,CLK).Eachofthex4’s33,554,432- | MicronMicron Technology 镁光美国镁光科技有限公司 | | | |
SYNCHRONOUSDRAM GeneralDescription The128MbSDRAMisahigh-speedCMOS,dynamicrandom-accessmemorycontaining134,217,728bits.Itisinternallyconfiguredasaquad-bankDRAMwithasynchronousinterface(allsignalsareregisteredonthepositiveedgeoftheclocksignal,CLK).Eachofthex4’s33,554,432- | MicronMicron Technology 镁光美国镁光科技有限公司 | | | |
SYNCHRONOUSDRAM GeneralDescription The128MbSDRAMisahigh-speedCMOS,dynamicrandom-accessmemorycontaining134,217,728bits.Itisinternallyconfiguredasaquad-bankDRAMwithasynchronousinterface(allsignalsareregisteredonthepositiveedgeoftheclocksignal,CLK).Eachofthex4’s33,554,432- | MicronMicron Technology 镁光美国镁光科技有限公司 | | | |
SYNCHRONOUSDRAM GeneralDescription The128MbSDRAMisahigh-speedCMOS,dynamicrandom-accessmemorycontaining134,217,728bits.Itisinternallyconfiguredasaquad-bankDRAMwithasynchronousinterface(allsignalsareregisteredonthepositiveedgeoftheclocksignal,CLK).Eachofthex4’s33,554,432- | MicronMicron Technology 镁光美国镁光科技有限公司 | | | |
SYNCHRONOUSDRAM GeneralDescription The128MbSDRAMisahigh-speedCMOS,dynamicrandom-accessmemorycontaining134,217,728bits.Itisinternallyconfiguredasaquad-bankDRAMwithasynchronousinterface(allsignalsareregisteredonthepositiveedgeoftheclocksignal,CLK).Eachofthex4’s33,554,432- | MicronMicron Technology 镁光美国镁光科技有限公司 | | | |
SYNCHRONOUSDRAM GeneralDescription The128MbSDRAMisahigh-speedCMOS,dynamicrandom-accessmemorycontaining134,217,728bits.Itisinternallyconfiguredasaquad-bankDRAMwithasynchronousinterface(allsignalsareregisteredonthepositiveedgeoftheclocksignal,CLK).Eachofthex4’s33,554,432- | MicronMicron Technology 镁光美国镁光科技有限公司 | | | |
SYNCHRONOUSDRAM GeneralDescription The128MbSDRAMisahigh-speedCMOS,dynamicrandom-accessmemorycontaining134,217,728bits.Itisinternallyconfiguredasaquad-bankDRAMwithasynchronousinterface(allsignalsareregisteredonthepositiveedgeoftheclocksignal,CLK).Eachofthex4’s33,554,432- | MicronMicron Technology 镁光美国镁光科技有限公司 | | | |
SYNCHRONOUSDRAM GeneralDescription The128MbSDRAMisahigh-speedCMOS,dynamicrandom-accessmemorycontaining134,217,728bits.Itisinternallyconfiguredasaquad-bankDRAMwithasynchronousinterface(allsignalsareregisteredonthepositiveedgeoftheclocksignal,CLK).Eachofthex4’s33,554,432- | MicronMicron Technology 镁光美国镁光科技有限公司 | | | |
SYNCHRONOUSDRAM GeneralDescription The128MbSDRAMisahigh-speedCMOS,dynamicrandom-accessmemorycontaining134,217,728bits.Itisinternallyconfiguredasaquad-bankDRAMwithasynchronousinterface(allsignalsareregisteredonthepositiveedgeoftheclocksignal,CLK).Eachofthex4’s33,554,432- | MicronMicron Technology 镁光美国镁光科技有限公司 | | | |
SYNCHRONOUSDRAM GeneralDescription The128MbSDRAMisahigh-speedCMOS,dynamicrandom-accessmemorycontaining134,217,728bits.Itisinternallyconfiguredasaquad-bankDRAMwithasynchronousinterface(allsignalsareregisteredonthepositiveedgeoftheclocksignal,CLK).Eachofthex4’s33,554,432- | MicronMicron Technology 镁光美国镁光科技有限公司 | | | |
SYNCHRONOUSDRAM
| MicronMicron Technology 镁光美国镁光科技有限公司 | | | |
SYNCHRONOUSDRAM GeneralDescription The128MbSDRAMisahigh-speedCMOS,dynamicrandom-accessmemorycontaining134,217,728bits.Itisinternallyconfiguredasaquad-bankDRAMwithasynchronousinterface(allsignalsareregisteredonthepositiveedgeoftheclocksignal,CLK).Eachofthex4’s33,554,432- | MicronMicron Technology 镁光美国镁光科技有限公司 | | | |
SYNCHRONOUSDRAM GeneralDescription The128MbSDRAMisahigh-speedCMOS,dynamicrandom-accessmemorycontaining134,217,728bits.Itisinternallyconfiguredasaquad-bankDRAMwithasynchronousinterface(allsignalsareregisteredonthepositiveedgeoftheclocksignal,CLK).Eachofthex4’s33,554,432- | MicronMicron Technology 镁光美国镁光科技有限公司 | | | |
SYNCHRONOUSDRAM GeneralDescription The128MbSDRAMisahigh-speedCMOS,dynamicrandom-accessmemorycontaining134,217,728bits.Itisinternallyconfiguredasaquad-bankDRAMwithasynchronousinterface(allsignalsareregisteredonthepositiveedgeoftheclocksignal,CLK).Eachofthex4’s33,554,432- | MicronMicron Technology 镁光美国镁光科技有限公司 | | | |
SYNCHRONOUSDRAM GeneralDescription The128MbSDRAMisahigh-speedCMOS,dynamicrandom-accessmemorycontaining134,217,728bits.Itisinternallyconfiguredasaquad-bankDRAMwithasynchronousinterface(allsignalsareregisteredonthepositiveedgeoftheclocksignal,CLK).Eachofthex4’s33,554,432- | MicronMicron Technology 镁光美国镁光科技有限公司 | | | |
SYNCHRONOUSDRAM GeneralDescription The128MbSDRAMisahigh-speedCMOS,dynamicrandom-accessmemorycontaining134,217,728bits.Itisinternallyconfiguredasaquad-bankDRAMwithasynchronousinterface(allsignalsareregisteredonthepositiveedgeoftheclocksignal,CLK).Eachofthex4’s33,554,432- | MicronMicron Technology 镁光美国镁光科技有限公司 | | | |
SYNCHRONOUSDRAM GeneralDescription The128MbSDRAMisahigh-speedCMOS,dynamicrandom-accessmemorycontaining134,217,728bits.Itisinternallyconfiguredasaquad-bankDRAMwithasynchronousinterface(allsignalsareregisteredonthepositiveedgeoftheclocksignal,CLK).Eachofthex4’s33,554,432- | MicronMicron Technology 镁光美国镁光科技有限公司 | | | |
SYNCHRONOUSDRAM GeneralDescription The128MbSDRAMisahigh-speedCMOS,dynamicrandom-accessmemorycontaining134,217,728bits.Itisinternallyconfiguredasaquad-bankDRAMwithasynchronousinterface(allsignalsareregisteredonthepositiveedgeoftheclocksignal,CLK).Eachofthex4’s33,554,432- | MicronMicron Technology 镁光美国镁光科技有限公司 | | | |
SYNCHRONOUSDRAM GeneralDescription The128MbSDRAMisahigh-speedCMOS,dynamicrandom-accessmemorycontaining134,217,728bits.Itisinternallyconfiguredasaquad-bankDRAMwithasynchronousinterface(allsignalsareregisteredonthepositiveedgeoftheclocksignal,CLK).Eachofthex4’s33,554,432- | MicronMicron Technology 镁光美国镁光科技有限公司 | | | |
SYNCHRONOUSDRAM GeneralDescription The128MbSDRAMisahigh-speedCMOS,dynamicrandom-accessmemorycontaining134,217,728bits.Itisinternallyconfiguredasaquad-bankDRAMwithasynchronousinterface(allsignalsareregisteredonthepositiveedgeoftheclocksignal,CLK).Eachofthex4’s33,554,432- | MicronMicron Technology 镁光美国镁光科技有限公司 | | | |
SYNCHRONOUSDRAM GeneralDescription The128MbSDRAMisahigh-speedCMOS,dynamicrandom-accessmemorycontaining134,217,728bits.Itisinternallyconfiguredasaquad-bankDRAMwithasynchronousinterface(allsignalsareregisteredonthepositiveedgeoftheclocksignal,CLK).Eachofthex4’s33,554,432- | MicronMicron Technology 镁光美国镁光科技有限公司 | | | |
SYNCHRONOUSDRAM GeneralDescription The128MbSDRAMisahigh-speedCMOS,dynamicrandom-accessmemorycontaining134,217,728bits.Itisinternallyconfiguredasaquad-bankDRAMwithasynchronousinterface(allsignalsareregisteredonthepositiveedgeoftheclocksignal,CLK).Eachofthex4’s33,554,432- | MicronMicron Technology 镁光美国镁光科技有限公司 | | | |
SYNCHRONOUSDRAM GeneralDescription The128MbSDRAMisahigh-speedCMOS,dynamicrandom-accessmemorycontaining134,217,728bits.Itisinternallyconfiguredasaquad-bankDRAMwithasynchronousinterface(allsignalsareregisteredonthepositiveedgeoftheclocksignal,CLK).Eachofthex4’s33,554,432- | MicronMicron Technology 镁光美国镁光科技有限公司 | | | |
SYNCHRONOUSDRAM GeneralDescription The128MbSDRAMisahigh-speedCMOS,dynamicrandom-accessmemorycontaining134,217,728bits.Itisinternallyconfiguredasaquad-bankDRAMwithasynchronousinterface(allsignalsareregisteredonthepositiveedgeoftheclocksignal,CLK).Eachofthex4’s33,554,432- | MicronMicron Technology 镁光美国镁光科技有限公司 | | | |
封装/外壳：54-VFBGA 包装：卷带（TR） 描述：IC DRAM 128MBIT PARALLEL 54VFBGA 集成电路（IC） 存储器 | ELPIDAElpida Memory 美光科技美光科技股份有限公司 |  | | |
封装/外壳：54-VFBGA 包装：托盘 描述：IC DRAM 128MBIT PARALLEL 54VFBGA 集成电路（IC） 存储器 | ELPIDAElpida Memory 美光科技美光科技股份有限公司 | | | |
SYNCHRONOUSDRAM 文件：4.137859 Mbytes Page：55 Pages | MicronMicron Technology 镁光美国镁光科技有限公司 | | |
MT48LC8M16A2产品属性
- 类型
描述
- 型号
MT48LC8M16A2
- 制造商
MICRON
- 制造商全称
Micron Technology
- 功能描述
SYNCHRONOUS DRAM
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
micron(镁光) |
24+ |
标准封装 |
17148 |
全新原装正品/价格优惠/质量保障 |
|||
MRON/美光 |
24+ |
NA/ |
304 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
MICRON |
2016+ |
TSOP |
5000 |
全新原装现货,只售原装,假一赔十! |
|||
MT |
23+ |
SOP |
20000 |
全新原装假一赔十 |
|||
MICRON |
三年内 |
1983 |
只做原装正品 |
||||
MICRON/美光 |
22+ |
VFBGA54 |
100000 |
代理渠道/只做原装/可含税 |
|||
MICRON/美光 |
25+ |
BGA |
54648 |
百分百原装现货 实单必成 欢迎询价 |
|||
MT |
07+ |
TSOP54 |
130 |
全新原装进口自己库存优势 |
|||
Micron/镁光 |
21+ |
TSOP-54 |
8080 |
只做原装,质量保证 |
|||
MICRON/美光 |
24+ |
TSOP54 |
880000 |
明嘉莱只做原装正品现货 |
MT48LC8M16A2芯片相关品牌
MT48LC8M16A2规格书下载地址
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- MT440-Y
- MT440-O
- MT440-G
- MT4409
- MT4407
- MT430-Y
- MT430-O
- MT430-G
MT48LC8M16A2数据表相关新闻
MT48LC4M32B2P-7IT保证原装正品
MT48LC4M32B2P-7IT保证原装正品
2024-9-20MT48LC8M16A2P-75IT:G 深圳旭亨半导体有限公司
MT48LC8M16A2P-75IT:GMICRON原装现货长期供应QQ：2880524281
2021-4-22MT48LC8M16A2P-6AIT:L 深圳旭亨半导体有限公司
MT48LC8M16A2P-6AIT:LMICRON原装现货长期供应QQ：2880524281
2021-4-22MT48LC8M16A2TG-75:G 深圳旭亨半导体有限公司
MT48LC8M16A2TG-75:GMICRON原装现货长期供应QQ：2880524281
2021-4-22MT48LC4M32B2P-6:G 深圳旭亨半导体有限公司
MT48LC4M32B2P-6:GMICRON原装现货长期供应0755-23615656/18566696862QQ：2880524286
2021-4-22MT48LC4M16A2TG-7E:G
MT48LC4M16A2TG-7E:G
2020-6-8
DdatasheetPDF页码索引
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