位置：首页 > IC中文资料第6338页 > MT48LC8M16A2
MT48LC8M16A2价格
参考价格：￥54.7724
型号：MT48LC8M16A2B4-6AAIT:LTR 品牌：MICRON 备注：这里有MT48LC8M16A2多少钱，2025年最近7天走势，今日出价，今日竞价，MT48LC8M16A2批发/采购报价，MT48LC8M16A2行情走势销售排行榜，MT48LC8M16A2报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
MT48LC8M16A2 | SYNCHRONOUS DRAM General Description The 128Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 134,217,728 bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the x4’s 33,554,432- | Micron 美光 |   | |
MT48LC8M16A2 | SYNCHRONOUS DRAM General Description The 128Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 134,217,728 bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the x4’s 33,554,432- | Micron 美光 | | |
MT48LC8M16A2 | SYNCHRONOUS DRAM | Micron 美光 | | |
SYNCHRONOUS DRAM General Description The 128Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 134,217,728 bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the x4’s 33,554,432- | Micron 美光 | | ||
SYNCHRONOUS DRAM General Description The 128Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 134,217,728 bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the x4’s 33,554,432- | Micron 美光 | | ||
SYNCHRONOUS DRAM General Description The 128Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 134,217,728 bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the x4’s 33,554,432- | Micron 美光 | | ||
SYNCHRONOUS DRAM General Description The 128Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 134,217,728 bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the x4’s 33,554,432- | Micron 美光 | | ||
SYNCHRONOUS DRAM General Description The 128Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 134,217,728 bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the x4’s 33,554,432- | Micron 美光 | | ||
SYNCHRONOUS DRAM General Description The 128Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 134,217,728 bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the x4’s 33,554,432- | Micron 美光 | | ||
SYNCHRONOUS DRAM General Description The 128Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 134,217,728 bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the x4’s 33,554,432- | Micron 美光 | | ||
SYNCHRONOUS DRAM General Description The 128Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 134,217,728 bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the x4’s 33,554,432- | Micron 美光 | | ||
SYNCHRONOUS DRAM General Description The 128Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 134,217,728 bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the x4’s 33,554,432- | Micron 美光 | | ||
SYNCHRONOUS DRAM General Description The 128Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 134,217,728 bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the x4’s 33,554,432- | Micron 美光 | | ||
SYNCHRONOUS DRAM General Description The 128Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 134,217,728 bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the x4’s 33,554,432- | Micron 美光 | | ||
SYNCHRONOUS DRAM General Description The 128Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 134,217,728 bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the x4’s 33,554,432- | Micron 美光 | | ||
SYNCHRONOUS DRAM General Description The 128Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 134,217,728 bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the x4’s 33,554,432- | Micron 美光 | | ||
SYNCHRONOUS DRAM General Description The 128Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 134,217,728 bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the x4’s 33,554,432- | Micron 美光 | | ||
SYNCHRONOUS DRAM General Description The 128Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 134,217,728 bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the x4’s 33,554,432- | Micron 美光 | | ||
SYNCHRONOUS DRAM General Description The 128Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 134,217,728 bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the x4’s 33,554,432- | Micron 美光 | | ||
SYNCHRONOUS DRAM General Description The 128Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 134,217,728 bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the x4’s 33,554,432- | Micron 美光 | | ||
SYNCHRONOUS DRAM General Description The 128Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 134,217,728 bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the x4’s 33,554,432- | Micron 美光 | | ||
SYNCHRONOUS DRAM General Description The 128Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 134,217,728 bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the x4’s 33,554,432- | Micron 美光 | | ||
SYNCHRONOUS DRAM General Description The 128Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 134,217,728 bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the x4’s 33,554,432- | Micron 美光 | | ||
SYNCHRONOUS DRAM General Description The 128Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 134,217,728 bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the x4’s 33,554,432- | Micron 美光 | | ||
SYNCHRONOUS DRAM General Description The 128Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 134,217,728 bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the x4’s 33,554,432- | Micron 美光 | | ||
SYNCHRONOUS DRAM General Description The 128Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 134,217,728 bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the x4’s 33,554,432- | Micron 美光 | | ||
SYNCHRONOUS DRAM General Description The 128Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 134,217,728 bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the x4’s 33,554,432- | Micron 美光 | | ||
SYNCHRONOUS DRAM
| Micron 美光 | | ||
SYNCHRONOUS DRAM General Description The 128Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 134,217,728 bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the x4’s 33,554,432- | Micron 美光 | | ||
SYNCHRONOUS DRAM General Description The 128Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 134,217,728 bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the x4’s 33,554,432- | Micron 美光 | | ||
SYNCHRONOUS DRAM General Description The 128Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 134,217,728 bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the x4’s 33,554,432- | Micron 美光 | | ||
SYNCHRONOUS DRAM General Description The 128Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 134,217,728 bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the x4’s 33,554,432- | Micron 美光 | | ||
SYNCHRONOUS DRAM General Description The 128Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 134,217,728 bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the x4’s 33,554,432- | Micron 美光 | | ||
SYNCHRONOUS DRAM General Description The 128Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 134,217,728 bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the x4’s 33,554,432- | Micron 美光 | | ||
SYNCHRONOUS DRAM General Description The 128Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 134,217,728 bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the x4’s 33,554,432- | Micron 美光 | | ||
SYNCHRONOUS DRAM General Description The 128Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 134,217,728 bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the x4’s 33,554,432- | Micron 美光 | | ||
SYNCHRONOUS DRAM General Description The 128Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 134,217,728 bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the x4’s 33,554,432- | Micron 美光 | | ||
SYNCHRONOUS DRAM General Description The 128Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 134,217,728 bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the x4’s 33,554,432- | Micron 美光 | | ||
SYNCHRONOUS DRAM General Description The 128Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 134,217,728 bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the x4’s 33,554,432- | Micron 美光 | | ||
SYNCHRONOUS DRAM General Description The 128Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 134,217,728 bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the x4’s 33,554,432- | Micron 美光 | | ||
SYNCHRONOUS DRAM General Description The 128Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 134,217,728 bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the x4’s 33,554,432- | Micron 美光 | | ||
SDRAM | Micron 美光 | | ||
SDRAM 128M X16 VFBGA | Micron 美光 | | ||
封装/外壳：54-VFBGA 包装：卷带（TR） 描述：IC DRAM 128MBIT PARALLEL 54VFBGA 集成电路（IC） 存储器 | ETC 知名厂家 | ETC | | |
封装/外壳：54-VFBGA 包装：托盘 描述：IC DRAM 128MBIT PARALLEL 54VFBGA 集成电路（IC） 存储器 | ETC 知名厂家 | ETC | | |
SYNCHRONOUS DRAM 文件：4.137859 Mbytes Page：55 Pages | Micron 美光 | |
MT48LC8M16A2产品属性
- 类型
描述
- 型号
MT48LC8M16A2
- 制造商
MICRON
- 制造商全称
Micron Technology
- 功能描述
SYNCHRONOUS DRAM
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
micron(镁光) |
24+ |
标准封装 |
17148 |
全新原装正品/价格优惠/质量保障 |
|||
MRON/美光 |
24+ |
NA/ |
304 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
MICRON |
2016+ |
TSOP |
5000 |
全新原装现货,只售原装,假一赔十! |
|||
MT |
23+ |
SOP |
20000 |
全新原装假一赔十 |
|||
Micron/镁光 |
23+ |
TSOP-54 |
12700 |
买原装认准中赛美 |
|||
MICRON |
BGA |
50000 |
|||||
MICRON/美光 |
25+ |
BGA |
54648 |
百分百原装现货 实单必成 欢迎询价 |
|||
MICRON/美光 |
22+ |
VFBGA54 |
100000 |
代理渠道/只做原装/可含税 |
|||
Micron/镁光 |
24+ |
TSOP-54 |
8685 |
全新原厂原装，进口正品现货，正规渠道可含税！！ |
|||
MT |
07+ |
TSOP54 |
130 |
全新原装进口自己库存优势 |
MT48LC8M16A2芯片相关品牌
MT48LC8M16A2规格书下载地址
MT48LC8M16A2参数引脚图相关
- op07
- OLED显示屏
- oled发光材料
- OLED材料
- ogs
- OEM
- nvidia
- ntc热敏电阻
- nrf24l01
- nfc芯片
- NFC
- ne555定时器
- ne555
- nand闪存
- n74
- n100
- mxt
- murata
- mt7201
- mt6795
- MT5004A
- MT4S34U
- MT4S32U
- MT4S24U
- MT4S23U
- MT4S07U
- MT4S07
- MT4S06
- MT4S04A
- MT4S03A
- MT4M5
- MT4K5
- MT4H5
- MT4G5
- MT4F5
- MT4E5
- MT4D5
- MT4C5
- MT4B5
- MT4A5
- MT49H8M36BM-25:B
- MT49H8M36BM-18:B
- MT49H32M9FM-25:B
- MT49H32M18BM-25:B
- MT49H32M18BM-18:B
- MT49H16M36BM-25IT:B
- MT49H16M36BM-25:B
- MT49H16M36BM-18IT:B
- MT49H16M36BM-18:B
- MT49H16M18FM-33:B
- MT48LC8M8A2P-75IT:G
- MT48LC8M8A2P-6A:J
- MT48LC8M16A2P-7EIT:LTR
- MT48LC8M16A2P-7E:L
- MT48LC8M16A2P-6AXIT:L
- MT48LC8M16A2P-6AIT:L
- MT48LC8M16A2P-6A:LTR
- MT48LC8M16A2P-6A:L
- MT48LC8M16A2B4-6AIT:L
- MT48LC8M16A2B4-6AAIT:LTR
- MT48LC64M8A2TG-75:IT:C
- MT48LC64M8A2TG-75:C
- MT48LC64M8A2P-75IT:C
- MT48LC64M8A2P-75:C
- MT48LC4M32B2P-6AIT:LTR
- MT48LC4M32B2P-6AIT:L
- MT48LC4M32B2P-6AAIT:LTR
- MT48LC4M32B2P-6A:L
- MT48LC4M32B2B5-6AIT:L
- MT48LC4M32B2>J>
- MT48LC4M16A2P-7EIT:J
- MT48LC4M16A2P-6AIT:J
- MT48LC4M16A2P-6AAIT:JTR
- MT48LC4M16A2P-6A:J
- MT48LC4M16A2P-6:G
- MT48LC4M16A2B4-6A:J
- MT48LC4M16A2>Q>
- MT48LC4M16A2>K>
- MT48LC32M8A2P-7E:G
- MT48LC32M8A2P-6A:G
- MT48K3
- MT48K1
- MT-4896
- MT-48
- MT470-Y
- MT470-R
- MT470-G
- MT470
- MT4606
- MT4435
- MT4420
- MT4410
- MT440-Y
- MT440-O
- MT440-G
- MT4409
- MT4407
- MT430-Y
- MT430-O
- MT430-G
MT48LC8M16A2数据表相关新闻
MT48LC4M32B2P-7IT保证原装正品
MT48LC4M32B2P-7IT保证原装正品
2024-9-20MT48LC8M16A2P-75IT:G 深圳旭亨半导体有限公司
MT48LC8M16A2P-75IT:G MICRON 原装现货 长期供应 QQ：2880524281
2021-4-22MT48LC8M16A2P-6AIT:L 深圳旭亨半导体有限公司
MT48LC8M16A2P-6AIT:L MICRON 原装现货 长期供应 QQ：2880524281
2021-4-22MT48LC8M16A2TG-75:G 深圳旭亨半导体有限公司
MT48LC8M16A2TG-75:G MICRON 原装现货 长期供应 QQ：2880524281
2021-4-22MT48LC4M32B2P-6:G 深圳旭亨半导体有限公司
MT48LC4M32B2P-6:G MICRON 原装现货长期供应 0755-23615656 / 185 6669 6862 QQ：2880524286
2021-4-22MT48LC4M16A2TG-7E:G
MT48LC4M16A2TG-7E:G
2020-6-8
DdatasheetPDF页码索引
- P1
- P2
- P3
- P4
- P5
- P6
- P7
- P8
- P9
- P10
- P11
- P12
- P13
- P14
- P15
- P16
- P17
- P18
- P19
- P20
- P21
- P22
- P23
- P24
- P25
- P26
- P27
- P28
- P29
- P30
- P31
- P32
- P33
- P34
- P35
- P36
- P37
- P38
- P39
- P40
- P41
- P42
- P43
- P44
- P45
- P46
- P47
- P48
- P49
- P50
- P51
- P52
- P53
- P54
- P55
- P56
- P57
- P58
- P59
- P60
- P61
- P62
- P63
- P64
- P65
- P66
- P67
- P68
- P69
- P70
- P71
- P72
- P73
- P74
- P75
- P76
- P77
- P78
- P79
- P80
- P81
- P82
- P83
- P84
- P85
- P86
- P87
- P88
- P89
- P90
- P91
- P92
- P93
- P94
- P95
- P96
- P97
- P98
- P99
- P100
- P101
- P102
- P103
- P104
- P105
- P106
- P107
