型号 功能描述 生产厂家 企业 LOGO 操作
MT48LC8M16A2TG

SYNCHRONOUS DRAM

Micron

美光

MT48LC8M16A2TG

SYNCHRONOUS DRAM

文件:4.137859 Mbytes Page:55 Pages

Micron

美光

SYNCHRONOUS DRAM

General Description The 128Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 134,217,728 bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the x4’s 33,554,432-

Micron

美光

SYNCHRONOUS DRAM

General Description The 128Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 134,217,728 bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the x4’s 33,554,432-

Micron

美光

SYNCHRONOUS DRAM

General Description The 128Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 134,217,728 bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the x4’s 33,554,432-

Micron

美光

SYNCHRONOUS DRAM

General Description The 128Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 134,217,728 bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the x4’s 33,554,432-

Micron

美光

SYNCHRONOUS DRAM

General Description The 128Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 134,217,728 bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the x4’s 33,554,432-

Micron

美光

SYNCHRONOUS DRAM

General Description The 128Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 134,217,728 bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the x4’s 33,554,432-

Micron

美光

SYNCHRONOUS DRAM

General Description The 128Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 134,217,728 bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the x4’s 33,554,432-

Micron

美光

SYNCHRONOUS DRAM

General Description The 128Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 134,217,728 bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the x4’s 33,554,432-

Micron

美光

SYNCHRONOUS DRAM

General Description The 128Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 134,217,728 bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the x4’s 33,554,432-

Micron

美光

SYNCHRONOUS DRAM

General Description The 128Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 134,217,728 bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the x4’s 33,554,432-

Micron

美光

SYNCHRONOUS DRAM

General Description The 128Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 134,217,728 bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the x4’s 33,554,432-

Micron

美光

SYNCHRONOUS DRAM

General Description The 128Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 134,217,728 bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the x4’s 33,554,432-

Micron

美光

SYNCHRONOUS DRAM

General Description The 128Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 134,217,728 bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the x4’s 33,554,432-

Micron

美光

SYNCHRONOUS DRAM

General Description The 128Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 134,217,728 bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the x4’s 33,554,432-

Micron

美光

SYNCHRONOUS DRAM

General Description The 128Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 134,217,728 bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the x4’s 33,554,432-

Micron

美光

SDRAM

Micron

美光

SDRAM 128M X16 TSOP

Micron

美光

封装/外壳:54-TSOP(0.400",10.16mm 宽) 包装:托盘 描述:IC DRAM 128MBIT PAR 54TSOP II 集成电路(IC) 存储器

ETC

知名厂家

动态随机存取存储器 S动态随机存取存储器 128M 8M X 16 TSOP C TEMP , LEADED

ETC

知名厂家

封装/外壳:54-TSOP(0.400",10.16mm 宽) 包装:散装 描述:IC DRAM 128MBIT PAR 54TSOP II 集成电路(IC) 存储器

Alliance

MT48LC8M16A2TG产品属性

  • 类型

    描述

  • 型号

    MT48LC8M16A2TG

  • 制造商

    Micron Technology Inc

  • 功能描述

    DRAM Chip SDRAM 128M-Bit 8Mx16 3.3V 54-Pin TSOP-II Tray

更新时间:2025-9-22 17:25:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
Micron
22+
54TSOP II
9000
原厂渠道,现货配单
Micron
24+
FBGA
50000
专营Micron全线品牌假一赔万原装进口货可开增值税发票
MICRON
23+
TSOP
20000
原装进口ICMCUSOCMOS等知名国内外品牌只做原装全
Micron
16
公司优势库存 热卖中!!
MICRON
24+
BGA
23000
免费送样原盒原包现货一手渠道联系
Micron(镁光)
24+
N/A
12048
原厂可订货,技术支持,直接渠道。可签保供合同
MICRON
24+
TSOP
6500
全新原装现货,欢迎询购!!
micron(镁光)
23+
NA
20094
正纳10年以上分销经验原装进口正品做服务做口碑有支持
MICRON
25+
TSOP54
3000
全新原装、诚信经营、公司现货销售!
micron(镁光)
24+
标准封装
17148
全新原装正品/价格优惠/质量保障

MT48LC8M16A2TG数据表相关新闻