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| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
MT48LC8M16A2TG | SYNCHRONOUSDRAM
| MicronMicron Technology 镁光美国镁光科技有限公司 |  |   |
MT48LC8M16A2TG | SYNCHRONOUSDRAM 文件：4.137859 Mbytes Page：55 Pages | MicronMicron Technology 镁光美国镁光科技有限公司 | | |
SYNCHRONOUSDRAM GeneralDescription The128MbSDRAMisahigh-speedCMOS,dynamicrandom-accessmemorycontaining134,217,728bits.Itisinternallyconfiguredasaquad-bankDRAMwithasynchronousinterface(allsignalsareregisteredonthepositiveedgeoftheclocksignal,CLK).Eachofthex4’s33,554,432- | MicronMicron Technology 镁光美国镁光科技有限公司 | | | |
SYNCHRONOUSDRAM GeneralDescription The128MbSDRAMisahigh-speedCMOS,dynamicrandom-accessmemorycontaining134,217,728bits.Itisinternallyconfiguredasaquad-bankDRAMwithasynchronousinterface(allsignalsareregisteredonthepositiveedgeoftheclocksignal,CLK).Eachofthex4’s33,554,432- | MicronMicron Technology 镁光美国镁光科技有限公司 | | | |
SYNCHRONOUSDRAM GeneralDescription The128MbSDRAMisahigh-speedCMOS,dynamicrandom-accessmemorycontaining134,217,728bits.Itisinternallyconfiguredasaquad-bankDRAMwithasynchronousinterface(allsignalsareregisteredonthepositiveedgeoftheclocksignal,CLK).Eachofthex4’s33,554,432- | MicronMicron Technology 镁光美国镁光科技有限公司 | | | |
SYNCHRONOUSDRAM GeneralDescription The128MbSDRAMisahigh-speedCMOS,dynamicrandom-accessmemorycontaining134,217,728bits.Itisinternallyconfiguredasaquad-bankDRAMwithasynchronousinterface(allsignalsareregisteredonthepositiveedgeoftheclocksignal,CLK).Eachofthex4’s33,554,432- | MicronMicron Technology 镁光美国镁光科技有限公司 | | | |
SYNCHRONOUSDRAM GeneralDescription The128MbSDRAMisahigh-speedCMOS,dynamicrandom-accessmemorycontaining134,217,728bits.Itisinternallyconfiguredasaquad-bankDRAMwithasynchronousinterface(allsignalsareregisteredonthepositiveedgeoftheclocksignal,CLK).Eachofthex4’s33,554,432- | MicronMicron Technology 镁光美国镁光科技有限公司 | | | |
SYNCHRONOUSDRAM GeneralDescription The128MbSDRAMisahigh-speedCMOS,dynamicrandom-accessmemorycontaining134,217,728bits.Itisinternallyconfiguredasaquad-bankDRAMwithasynchronousinterface(allsignalsareregisteredonthepositiveedgeoftheclocksignal,CLK).Eachofthex4’s33,554,432- | MicronMicron Technology 镁光美国镁光科技有限公司 | | | |
SYNCHRONOUSDRAM GeneralDescription The128MbSDRAMisahigh-speedCMOS,dynamicrandom-accessmemorycontaining134,217,728bits.Itisinternallyconfiguredasaquad-bankDRAMwithasynchronousinterface(allsignalsareregisteredonthepositiveedgeoftheclocksignal,CLK).Eachofthex4’s33,554,432- | MicronMicron Technology 镁光美国镁光科技有限公司 | | | |
SYNCHRONOUSDRAM GeneralDescription The128MbSDRAMisahigh-speedCMOS,dynamicrandom-accessmemorycontaining134,217,728bits.Itisinternallyconfiguredasaquad-bankDRAMwithasynchronousinterface(allsignalsareregisteredonthepositiveedgeoftheclocksignal,CLK).Eachofthex4’s33,554,432- | MicronMicron Technology 镁光美国镁光科技有限公司 | | | |
SYNCHRONOUSDRAM GeneralDescription The128MbSDRAMisahigh-speedCMOS,dynamicrandom-accessmemorycontaining134,217,728bits.Itisinternallyconfiguredasaquad-bankDRAMwithasynchronousinterface(allsignalsareregisteredonthepositiveedgeoftheclocksignal,CLK).Eachofthex4’s33,554,432- | MicronMicron Technology 镁光美国镁光科技有限公司 | | | |
SYNCHRONOUSDRAM GeneralDescription The128MbSDRAMisahigh-speedCMOS,dynamicrandom-accessmemorycontaining134,217,728bits.Itisinternallyconfiguredasaquad-bankDRAMwithasynchronousinterface(allsignalsareregisteredonthepositiveedgeoftheclocksignal,CLK).Eachofthex4’s33,554,432- | MicronMicron Technology 镁光美国镁光科技有限公司 | | | |
SYNCHRONOUSDRAM GeneralDescription The128MbSDRAMisahigh-speedCMOS,dynamicrandom-accessmemorycontaining134,217,728bits.Itisinternallyconfiguredasaquad-bankDRAMwithasynchronousinterface(allsignalsareregisteredonthepositiveedgeoftheclocksignal,CLK).Eachofthex4’s33,554,432- | MicronMicron Technology 镁光美国镁光科技有限公司 | | | |
SYNCHRONOUSDRAM GeneralDescription The128MbSDRAMisahigh-speedCMOS,dynamicrandom-accessmemorycontaining134,217,728bits.Itisinternallyconfiguredasaquad-bankDRAMwithasynchronousinterface(allsignalsareregisteredonthepositiveedgeoftheclocksignal,CLK).Eachofthex4’s33,554,432- | MicronMicron Technology 镁光美国镁光科技有限公司 | | | |
SYNCHRONOUSDRAM GeneralDescription The128MbSDRAMisahigh-speedCMOS,dynamicrandom-accessmemorycontaining134,217,728bits.Itisinternallyconfiguredasaquad-bankDRAMwithasynchronousinterface(allsignalsareregisteredonthepositiveedgeoftheclocksignal,CLK).Eachofthex4’s33,554,432- | MicronMicron Technology 镁光美国镁光科技有限公司 | | | |
SYNCHRONOUSDRAM GeneralDescription The128MbSDRAMisahigh-speedCMOS,dynamicrandom-accessmemorycontaining134,217,728bits.Itisinternallyconfiguredasaquad-bankDRAMwithasynchronousinterface(allsignalsareregisteredonthepositiveedgeoftheclocksignal,CLK).Eachofthex4’s33,554,432- | MicronMicron Technology 镁光美国镁光科技有限公司 | | | |
SYNCHRONOUSDRAM GeneralDescription The128MbSDRAMisahigh-speedCMOS,dynamicrandom-accessmemorycontaining134,217,728bits.Itisinternallyconfiguredasaquad-bankDRAMwithasynchronousinterface(allsignalsareregisteredonthepositiveedgeoftheclocksignal,CLK).Eachofthex4’s33,554,432- | MicronMicron Technology 镁光美国镁光科技有限公司 | | | |
封装/外壳：54-TSOP（0.400"，10.16mm 宽） 包装：托盘 描述：IC DRAM 128MBIT PAR 54TSOP II 集成电路（IC） 存储器 | ELPIDAElpida Memory 美光科技美光科技股份有限公司 |  | | |
封装/外壳：54-TSOP（0.400"，10.16mm 宽） 包装：散装 描述：IC DRAM 128MBIT PAR 54TSOP II 集成电路（IC） 存储器 | Alliance Alliance Memory, Inc. |  | |
MT48LC8M16A2TG产品属性
- 类型
描述
- 型号
MT48LC8M16A2TG
- 制造商
Micron Technology Inc
- 功能描述
DRAM Chip SDRAM 128M-Bit 8Mx16 3.3V 54-Pin TSOP-II Tray
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
MICRON |
24+ |
N/A |
8000 |
全新原装正品,现货销售 |
|||
MICRON |
12+ |
SOP54 |
2500 |
原装现货/特价 |
|||
MICRON |
2430+ |
TSOP |
8540 |
只做原装正品假一赔十为客户做到零风险!! |
|||
Micron Technology Inc |
23+/24+ |
54-TSOP |
8600 |
只供原装进口公司现货+可订货 |
|||
MICRON |
24+ |
TSSOP |
4000 |
原装原厂代理 可免费送样品 |
|||
MICRON |
23+ |
SOP |
8560 |
受权代理!全新原装现货特价热卖! |
|||
MICRON/美光 |
23+ |
TSOP |
13968 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
MICRON |
24+ |
TSOP54 |
2568 |
原装优势!绝对公司现货 |
|||
MICRON |
25+ |
TSSOP |
5152 |
※※※福安瓯大量现货,低价甩卖※※※ |
|||
Micron |
22+ |
54TSOP II |
9000 |
原厂渠道,现货配单 |
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