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MT48LC价格
参考价格：￥26.3431
型号：MT48LC16M16A>N> 品牌：Micron 备注：这里有MT48LC多少钱，2025年最近7天走势，今日出价，今日竞价，MT48LC批发/采购报价，MT48LC行情走势销售排行榜，MT48LC报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
SYNCHRONOUS DRAM General Description The 512Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 536,870,912 bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the x4’s 134,217,728 | Micron 美光 |   | ||
SYNCHRONOUS DRAM General Description The 512Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 536,870,912 bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the x4’s 134,217,728 | Micron 美光 | | ||
SYNCHRONOUS DRAM General Description The 256Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 268,435,456 bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the x4’s 67,108,864- | Micron 美光 | | ||
SYNCHRONOUS DRAM SYNCHRONOUS DRAM MT48LC16M4A2 – 4 Meg x 4 x 4 banks MT48LC8M8A2 – 2 Meg x 8 x 4 banks MT48LC4M16A2 – 1 Meg x 16 x 4 banks FEATURES • PC66-, PC100-, and PC133-compliant • Fully synchronous; all signals registered on positive edge of system clock • Internal pipelined oper | Micron 美光 | | ||
SYNCHRONOUS DRAM SYNCHRONOUS DRAM MT48LC16M4A2 – 4 Meg x 4 x 4 banks MT48LC8M8A2 – 2 Meg x 8 x 4 banks MT48LC4M16A2 – 1 Meg x 16 x 4 banks FEATURES • PC66-, PC100-, and PC133-compliant • Fully synchronous; all signals registered on positive edge of system clock • Internal pipelined oper | Micron 美光 | | ||
SYNCHRONOUS DRAM
| Micron 美光 | | ||
SYNCHRONOUS DRAM General Description The 128Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 134,217,728 bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the x4’s 33,554,432- | Micron 美光 | | ||
SYNCHRONOUS DRAM General Description The 128Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 134,217,728 bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the x4’s 33,554,432- | Micron 美光 | | ||
SYNCHRONOUS DRAM General Description The 128Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 134,217,728 bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the x4’s 33,554,432- | Micron 美光 | | ||
SYNCHRONOUS DRAM General Description The 128Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 134,217,728 bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the x4’s 33,554,432- | Micron 美光 | | ||
SYNCHRONOUS DRAM General Description The 128Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 134,217,728 bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the x4’s 33,554,432- | Micron 美光 | | ||
SYNCHRONOUS DRAM General Description The 128Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 134,217,728 bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the x4’s 33,554,432- | Micron 美光 | | ||
SYNCHRONOUS DRAM General Description The 128Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 134,217,728 bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the x4’s 33,554,432- | Micron 美光 | | ||
SYNCHRONOUS DRAM General Description The 128Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 134,217,728 bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the x4’s 33,554,432- | Micron 美光 | | ||
SYNCHRONOUS DRAM General Description The 128Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 134,217,728 bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the x4’s 33,554,432- | Micron 美光 | | ||
SYNCHRONOUS DRAM General Description The 128Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 134,217,728 bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the x4’s 33,554,432- | Micron 美光 | | ||
SYNCHRONOUS DRAM General Description The 128Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 134,217,728 bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the x4’s 33,554,432- | Micron 美光 | | ||
SYNCHRONOUS DRAM General Description The 128Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 134,217,728 bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the x4’s 33,554,432- | Micron 美光 | | ||
SYNCHRONOUS DRAM General Description The 128Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 134,217,728 bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the x4’s 33,554,432- | Micron 美光 | | ||
SYNCHRONOUS DRAM General Description The 128Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 134,217,728 bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the x4’s 33,554,432- | Micron 美光 | | ||
SYNCHRONOUS DRAM General Description The 128Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 134,217,728 bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the x4’s 33,554,432- | Micron 美光 | | ||
SYNCHRONOUS DRAM General Description The 128Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 134,217,728 bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the x4’s 33,554,432- | Micron 美光 | | ||
SYNCHRONOUS DRAM General Description The 128Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 134,217,728 bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the x4’s 33,554,432- | Micron 美光 | | ||
SYNCHRONOUS DRAM General Description The 128Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 134,217,728 bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the x4’s 33,554,432- | Micron 美光 | | ||
SYNCHRONOUS DRAM General Description The 128Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 134,217,728 bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the x4’s 33,554,432- | Micron 美光 | | ||
SYNCHRONOUS DRAM General Description The 128Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 134,217,728 bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the x4’s 33,554,432- | Micron 美光 | | ||
SYNCHRONOUS DRAM General Description The 128Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 134,217,728 bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the x4’s 33,554,432- | Micron 美光 | | ||
SYNCHRONOUS DRAM General Description The 128Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 134,217,728 bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the x4’s 33,554,432- | Micron 美光 | | ||
SYNCHRONOUS DRAM General Description The 128Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 134,217,728 bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the x4’s 33,554,432- | Micron 美光 | | ||
SYNCHRONOUS DRAM General Description The 128Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 134,217,728 bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the x4’s 33,554,432- | Micron 美光 | | ||
SYNCHRONOUS DRAM General Description The 128Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 134,217,728 bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the x4’s 33,554,432- | Micron 美光 | | ||
SYNCHRONOUS DRAM
| Micron 美光 | | ||
SYNCHRONOUS DRAM General Description The 128Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 134,217,728 bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the x4’s 33,554,432- | Micron 美光 | | ||
SYNCHRONOUS DRAM General Description The 128Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 134,217,728 bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the x4’s 33,554,432- | Micron 美光 | | ||
SYNCHRONOUS DRAM General Description The 128Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 134,217,728 bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the x4’s 33,554,432- | Micron 美光 | | ||
SYNCHRONOUS DRAM General Description The 128Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 134,217,728 bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the x4’s 33,554,432- | Micron 美光 | | ||
SYNCHRONOUS DRAM General Description The 128Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 134,217,728 bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the x4’s 33,554,432- | Micron 美光 | | ||
SYNCHRONOUS DRAM General Description The 128Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 134,217,728 bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the x4’s 33,554,432- | Micron 美光 | | ||
SYNCHRONOUS DRAM General Description The 128Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 134,217,728 bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the x4’s 33,554,432- | Micron 美光 | | ||
SYNCHRONOUS DRAM General Description The 128Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 134,217,728 bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the x4’s 33,554,432- | Micron 美光 | | ||
SYNCHRONOUS DRAM General Description The 128Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 134,217,728 bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the x4’s 33,554,432- | Micron 美光 | | ||
SYNCHRONOUS DRAM General Description The 128Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 134,217,728 bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the x4’s 33,554,432- | Micron 美光 | | ||
SYNCHRONOUS DRAM General Description The 128Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 134,217,728 bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the x4’s 33,554,432- | Micron 美光 | | ||
SYNCHRONOUS DRAM General Description The 128Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 134,217,728 bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the x4’s 33,554,432- | Micron 美光 | | ||
SYNCHRONOUS DRAM GENERAL DESCRIPTION The 16Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 16,777,216 bits. It is internally configured as a dual 512K x 16 DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the 512K x 16-bit | Micron 美光 | | ||
SYNCHRONOUS DRAM GENERAL DESCRIPTION The 16Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 16,777,216 bits. It is internally configured as a dual 512K x 16 DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the 512K x 16-bit | Micron 美光 | | ||
SYNCHRONOUS DRAM GENERAL DESCRIPTION The 16Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 16,777,216 bits. It is internally configured as a dual 512K x 16 DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the 512K x 16-bit | Micron 美光 | | ||
SYNCHRONOUS DRAM GENERAL DESCRIPTION The 16Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 16,777,216 bits. It is internally configured as a dual 512K x 16 DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the 512K x 16-bit | Micron 美光 | | ||
SYNCHRONOUS DRAM GENERAL DESCRIPTION The 64Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 67,108,864-bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the 16,777,216-bit ban | Micron 美光 | | ||
SYNCHRONOUS DRAM GENERAL DESCRIPTION The 64Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 67,108,864-bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the 16,777,216-bit ban | Micron 美光 | | ||
SYNCHRONOUS DRAM GENERAL DESCRIPTION The Micron 16Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 16,777,216 bits. It is internally configured as a dual memory array (the 4 Meg x 4 is a dual 2 Meg x 4, and the 2 Meg x 8 is a dual 1 Meg x 8) with a synchronous interface (all signals are regi | Micron 美光 | | ||
SYNCHRONOUS DRAM GENERAL DESCRIPTION The Micron 16Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 16,777,216 bits. It is internally configured as a dual memory array (the 4 Meg x 4 is a dual 2 Meg x 4, and the 2 Meg x 8 is a dual 1 Meg x 8) with a synchronous interface (all signals are regi | Micron 美光 | | ||
SYNCHRONOUS DRAM GENERAL DESCRIPTION The Micron 16Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 16,777,216 bits. It is internally configured as a dual memory array (the 4 Meg x 4 is a dual 2 Meg x 4, and the 2 Meg x 8 is a dual 1 Meg x 8) with a synchronous interface (all signals are regi | Micron 美光 | | ||
SYNCHRONOUS DRAM General Description The 512Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 536,870,912 bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the x4’s 134,217,728 | Micron 美光 | | ||
SDR SDRAM MT48LC128M4A2 ??32 Meg x 4 x 4 banks MT48LC64M8A2 ??16 Meg x 8 x 4 banks MT48LC32M16A2 ??8 Meg x 16 x 4 banks General Description The 512Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 536,870,912 bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the x4’s 134,217,728 | Micron 美光 | | ||
SYNCHRONOUS DRAM General Description The 512Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 536,870,912 bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the x4’s 134,217,728 | Micron 美光 | | ||
SYNCHRONOUS DRAM
| Micron 美光 | | ||
SYNCHRONOUS DRAM
| Micron 美光 | | ||
SYNCHRONOUS DRAM General Description The 128Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 134,217,728 bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the x4’s 33,554,432- | Micron 美光 | | ||
SYNCHRONOUS DRAM General Description The 128Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 134,217,728 bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the x4’s 33,554,432- | Micron 美光 | |
MT48LC产品属性
- 类型
描述
- 型号
MT48LC
- 制造商
MICRON
- 制造商全称
Micron Technology
- 功能描述
SYNCHRONOUS DRAM
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
MICRON/美光 |
23+ |
TSOP-54 |
50000 |
全新原装正品现货,支持订货 |
|||
micron(镁光) |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
|||
micron(镁光) |
24+ |
标准封装 |
10048 |
全新原装正品/价格优惠/质量保障 |
|||
MICRON |
23+ |
TSOP |
1800 |
十七年VIP会员,诚信经营，一手货源，原装正品可零售！ |
|||
Micron |
22+ |
54TSOP II |
9000 |
原厂渠道,现货配单 |
|||
MT |
24+ |
TSOP54 |
20000 |
全新原厂原装，进口正品现货，正规渠道可含税！！ |
|||
MICRON |
22+ |
TSOP |
20000 |
公司只做原装 品质保障 |
|||
Micron |
25+ |
电联咨询 |
7800 |
公司现货,提供拆样技术支持 |
|||
MICRON/美光 |
23+ |
TSOP |
13850 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
MICRON |
TSOP |
3350 |
一级代理 原装正品假一罚十价格优势长期供货 |
MT48LC芯片相关品牌
MT48LC规格书下载地址
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MT48LC数据表相关新闻
MT48LC16M16A2P-6AIT:G
原装代理
2023-9-4MT48LC16M16A2P-75L:D 深圳旭亨半导体有限公司
MT48LC16M16A2P-75L:D MICRON 原装现货 长期供应 QQ：2880524286
2021-4-26MT48LC16M16A2P-7E:G 深圳旭亨半导体有限公司
MT48LC16M16A2P-7E:G MICRON 原装现货 长期供应 QQ：2880524281
2021-4-22MT47H64M16NF-25E:M 深圳旭亨半导体有限公司
MT47H64M16NF-25E:M MICRON 原装现货长期供应 0755-88879678 / 131 6803 6460 QQ：2880524281
2021-4-15MT47H64M16NF-25EIT:M 假一罚十
只做原装正品，欢迎来电咨询！
2020-12-9MT47H64M16HR-3IT进口原装，主营军工级IC
MT47H64M16HR-3IT XILINX(赛灵思) ，ALTERA（阿尔特拉），军工级IC专业优势渠道
2019-11-11
DdatasheetPDF页码索引
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- P87
- P88
- P89
- P90
- P91
- P92
- P93
- P94
- P95
- P96
- P97
- P98
- P99
- P100
- P101
- P102
- P103
- P104
- P105
- P106
- P107
