SYNCHRONOUS DRAM

GENERAL DESCRIPTION The 64Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 67,108,864-bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the 16,777,216-bit ban

SDR SDRAM MT48LC2M32B2 ??512K x 32 x 4 Banks

文件：3.56943 Mbytes Page：80 Pages

SYNCHRONOUS DRAM

SYNCHRONOUS DRAM

GENERAL DESCRIPTION The 64Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 67,108,864-bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the 16,777,216-bit ban

封装/外壳：86-TFSOP（0.400"，10.16mm 宽） 包装：托盘 描述：IC DRAM 64MBIT PAR 86TSOP II 集成电路（IC） 存储器

封装/外壳：86-TFSOP（0.400"，10.16mm 宽） 包装：托盘 描述：IC DRAM 64MBIT PAR 86TSOP II 集成电路（IC） 存储器

IC DRAM 512M PARALLEL 54TSOP

SDR SDRAM MT48LC2M32B2 ??512K x 32 x 4 Banks

文件：3.56943 Mbytes Page：80 Pages