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MSC8价格

参考价格：￥1609.7497

型号：MSC8156SAG1000B 品牌：Motorola 备注：这里有MSC8多少钱，2025年最近7天走势，今日出价，今日竞价，MSC8批发/采购报价，MSC8行情走势销售排行榜，MSC8报价。

型号	功能描述	生产厂家&企业
MSC80185	RF & MICROWAVE TRANSISTORS GENERAL PURPOSE LINEAR APPLICATIONS DESCRIPTION TheMSC80185isahermeticallysealedNPNpowertransistorfeaturingauniquematrixstructure.ThisdeviceisspecificallydesignedforClassAlinearapplicationstoprovidehighgainandhighoutputpoweratthe1.0dBcompressionpoint. ■EMITTERBALLASTED ■CLASSALINEAROPERA	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团
MSC80186	GENERAL PURPOSE LINEAR APPLICATIONS RF & MICROWAVE TRANSISTORS DESCRIPTION TheMSC80185isahermeticallysealedNPNpowertransistorfeaturingauniquematrixstructure.ThisdeviceisspecificallydesignedforClassAlinearapplicationstoprovidehighgainandhighoutputpoweratthe1.0dBcompressionpoint. ■EMITTERBALLASTED ■CLASSALINEAROPERA	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团
MSC80195	RF & MICROWAVE TRANSISTORS GENERAL PURPOSE LINEAR APPLICATIONS DESCRIPTION TheMSC80195isahermeticallysealedNPNpowertransistorfeaturingauniquematrixstructure.ThisdeviceisspecificallydesignedforClassAlinearapplicationstoprovidehighgainandhighoutputpoweratthe1.0dBcompressionpoint. ■EMITTERBALLASTED ■CLASSALINEAROPERA	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团
MSC80196	RF & MICROWAVE TRANSISTORS GENERAL PURPOSE LINEAR APPLICATIONS DESCRIPTION TheMSC80196isahermeticallysealedNPNpowertransistorfeaturingauniquematrixstructure.ThisdeviceisspecificallydesignedforClassAlinearapplicationstoprovidehighgainandhighoutputpoweratthe1.0dBcompressionpoint. ■EMITTERBALLASTED ■CLASSALINEAROPERA	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团
MSC80196	NPN SILICON RF POWER TRANSISTOR DESCRIPTION: TheASIMSC80196isDesignedforClassALinearApplicationsupto2.0GHz. FEATURES: •ClassAOperation •PG=7.0dBat1.0W/2.0GHz •Omnigold™MetalizationSystem	ASI Advanced Semiconductor
MSC80197	RF & MICROWAVE TRANSISTORS GENERAL PURPOSE LINEAR APPLICATIONS DESCRIPTION TheMSC80197isahermeticallysealedNPNpowertransistorfeaturingauniquematrixstructure.ThisdeviceisspecificallydesignedforClassAlinearapplicationstoprovidehighgainandhighoutputpoweratthe1.0dBcompressionpoint. ■EMITTERBALLASTED ■CLASSALINEAROPERA	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团
MSC80213	NPN RF TRANSISTOR DESCRIPTION: TheASIMSC80213isaSiliconNPNMicrowaveTransistorSuppliedinaCommonBasePackage,DesignedforgeneralpurposeApplicationsupto2.3GHz. FEATURES: •HermeticallySealedPackage •GoldMetallization	ASI Advanced Semiconductor
MSC80278	NPN RF TRANSISTOR DESCRIPTION: TheASIMSC80278isaSiliconNPNMicrowaveTransistorSuppliedinaCommonEmitterPackage,DesignedforlinearApplications. FEATURES: •EmitterBallasted •GoldMetallization •HermeticallysealedPackage	ASI Advanced Semiconductor
MSC80917	NPN SILICON RF MICROWAVE TRANSISTOR DESCRIPTION: TheASIMSC80917islowlevelClass-C,CommonBaseDeviceDesignedforIFF,DMEdriverApplications. FEATURESINCLUDE: •Omnigold™MetalizationSystem •POUT4.0WMin. •GP=10dB	ASI Advanced Semiconductor
MSC81002	RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS DESCRIPTION TheMSC81002isacommonbasehermeticallysealedsiliconNPNmicrowavetransistorutilizingafishbone,emitterballastedgeometrywitharefractory/goldmetallizationsystem.ThisdeviceiscapableofwithstandinganinfiniteloadVSWRatanyphaseangleunderratedconditions. The	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团
MSC81005	RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS DESCRIPTION TheMSC81005isacommonbasehermeticallysealedsiliconNPNmicrowavetransistorutilizingafishboneemitterballastedgeometrywitharefractory/goldmetallizationsystem.ThisdeviceiscapableofwithstandinganinfiniteloadVSWRatanyphaseangleunderratedratedconditions.	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团
MSC81010	RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS DESCRIPTION TheMSC81010isacommonbasehermeticallysealedsiliconNPNmicrowavetransistorutilizingafishbone,emitterballastedgeometrywitharefractory/goldmetallizationsystem.ThisdeviceiscapableofwithstandinginfiniteloadVSWRatanyphaseangleunderratedconditions. TheMS	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团
MSC81020	RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS DESCRIPTION TheMSC81020isacommonbasehermeticallysealedsiliconNPNmicrowavetranisitorutilizingafishboneemitterballastedgeometrywitharefractory/goldmetallizationsystem.ThisdeviceisdesignedforClassCamplifierapplicationsinthe0.4-1.2GHzfrequencyrange. .EMI	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团
MSC81035M	RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS DESCRIPTION TheMSC81035MisamediumpowerClassCtransistordesignedspecificallyforpulsedL-Bandavionicsapplications.ThisdeviceisadirectreplacementfortheMSC1035M.MSC81035Moffersimprovedsaturatedouputpowerandcollectorefficiencybasedonthetestcircuitdescribedherein.	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团
MSC81035M	NPN SILICON RF POWER TRANSISTOR DESCRIPTION: TheASIMSC81035Misacommonbasedevice,mediumpowerClassCtransistorforpulsedL-Bandavionics,DME/TACANApplications. FEATURES: •Inputmatching •EmittersiteBallasted. •PG=10dBat35W/1150MHz •Omnigold™MetalizationSystem	ASI Advanced Semiconductor
MSC81035MP	RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS DESCRIPTION TheMSC81035MPisamediumpowerClassCtransistordesignedspecificallyforpulsedL-Bandavionicsapplications.ThisdeviceisadirectreplacementfortheMSC1035MP.MSC81035MPoffersimprovedsaturatedouputpowerandcollectorefficiencybasedonthetestcircuitdescribedhe	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团
MSC81038	NPN SILICON RF POWER TRANSISTOR DESCRIPTION: TheASIMSC81058isDesignedforGeneralPurposeClassCPowerAmplifierApplicationsupto1.2GHz. FEATURES: •PG=10dBmin.at10W/1.0GHz •HermeticMicrostripPackage •Omnigold™MetalizationSystem •EmitterBallasted	ASI Advanced Semiconductor
MSC81058	RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS DESCRIPTION TheMSC81058isacommonbasehermeticallysealedsiliconNPNmicrowavetransistorutilizingafishbone,emitterballastedgeometrywitharefractory/goldmetallizationsystem.ThisdeviceiscapableofwithstandinginfiniteloadVSWRatanyphaseangleunderratedconditions. TheMS	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团
MSC81090	NPN SILICON RF POWER TRANSISTOR DESCRIPTION: TheASIMSC81090isDesignedforGeneralPurposeClassAPowerAmplifierApplicationsfrom0.4-1.2GHz. FEATURES: •PG=10dBmin.at2.0W/1.0GHz •HermeticallysealedPackage •Omnigold™MetalizationSystem •EmitterBallasted	ASI Advanced Semiconductor
MSC81111	RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS DESCRIPTION TheMSC81111isacommonbasehermeticallysealedsiliconNPNmicrowavetransistorutilizingafishboneemitterballastedgeometrywitharefractory/goldmetallizationsystem.ThisdeviceiscapableofwithstandinganinfiniteloadVSWRatanyphaseangleunderratedratedconditions.	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团
MSC81111	NPN SILICON RF POWER TRANSISTOR DESCRIPTION: TheMSC81111isDesignedforClassCAmplifierApplicatioonsfrom0.4to1.2GHz,SuppliedinCommonBasePackage.	ASI Advanced Semiconductor
MSC81118	RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS DESCRIPTION TheMSC81118isacommonbasehermeticallysealedsiliconNPNmicrowavetransistorutilizingafishbone,emitterballastedgeometrywitharefractory/goldmetallizationsystem.ThisdeviceiscapableofwithstandinganinfiniteloadVSWRatanyphaseangleunderratedconditions. The	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团
MSC8122	Quad Core 16-Bit Digital Signal Processor QuadDigitalSignalProcessor •FourStarCore™SC140DSPextendedcores,eachwithanSC140 DSPcore,224KbyteofinternalSRAMM1memory(1436Kbyte total),16way16Kbyteinstructioncache(ICache),four-entry writebuffer,externalcachesupport,programmableinterrupt contro	freescaleFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体
MSC8122MP8000	Quad Core 16-Bit Digital Signal Processor QuadDigitalSignalProcessor •FourStarCore™SC140DSPextendedcores,eachwithanSC140 DSPcore,224KbyteofinternalSRAMM1memory(1436Kbyte total),16way16Kbyteinstructioncache(ICache),four-entry writebuffer,externalcachesupport,programmableinterrupt contro	freescaleFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体
MSC8122TMP4800V	Quad Core 16-Bit Digital Signal Processor QuadDigitalSignalProcessor •FourStarCore™SC140DSPextendedcores,eachwithanSC140 DSPcore,224KbyteofinternalSRAMM1memory(1436Kbyte total),16way16Kbyteinstructioncache(ICache),four-entry writebuffer,externalcachesupport,programmableinterrupt contro	freescaleFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体
MSC8122TMP6400	Quad Core 16-Bit Digital Signal Processor QuadDigitalSignalProcessor •FourStarCore™SC140DSPextendedcores,eachwithanSC140 DSPcore,224KbyteofinternalSRAMM1memory(1436Kbyte total),16way16Kbyteinstructioncache(ICache),four-entry writebuffer,externalcachesupport,programmableinterrupt contro	freescaleFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体
MSC8122TMP6400V	Quad Core 16-Bit Digital Signal Processor QuadDigitalSignalProcessor •FourStarCore™SC140DSPextendedcores,eachwithanSC140 DSPcore,224KbyteofinternalSRAMM1memory(1436Kbyte total),16way16Kbyteinstructioncache(ICache),four-entry writebuffer,externalcachesupport,programmableinterrupt contro	freescaleFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体
MSC8122TVT4800V	Quad Core 16-Bit Digital Signal Processor QuadDigitalSignalProcessor •FourStarCore™SC140DSPextendedcores,eachwithanSC140 DSPcore,224KbyteofinternalSRAMM1memory(1436Kbyte total),16way16Kbyteinstructioncache(ICache),four-entry writebuffer,externalcachesupport,programmableinterrupt contro	freescaleFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体
MSC8122TVT6400	Quad Core 16-Bit Digital Signal Processor QuadDigitalSignalProcessor •FourStarCore™SC140DSPextendedcores,eachwithanSC140 DSPcore,224KbyteofinternalSRAMM1memory(1436Kbyte total),16way16Kbyteinstructioncache(ICache),four-entry writebuffer,externalcachesupport,programmableinterrupt contro	freescaleFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体
MSC8122TVT6400V	Quad Core 16-Bit Digital Signal Processor QuadDigitalSignalProcessor •FourStarCore™SC140DSPextendedcores,eachwithanSC140 DSPcore,224KbyteofinternalSRAMM1memory(1436Kbyte total),16way16Kbyteinstructioncache(ICache),four-entry writebuffer,externalcachesupport,programmableinterrupt contro	freescaleFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体
MSC8122VT8000	Quad Core 16-Bit Digital Signal Processor QuadDigitalSignalProcessor •FourStarCore™SC140DSPextendedcores,eachwithanSC140 DSPcore,224KbyteofinternalSRAMM1memory(1436Kbyte total),16way16Kbyteinstructioncache(ICache),four-entry writebuffer,externalcachesupport,programmableinterrupt contro	freescaleFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体
MSC81250M	RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS DESCRIPTION TheMSC81250MdeviceisahighpowerpulsedtransistorspecificallydesignedforDME/TACANavionicsapplications. ■REFRACTORYGOLDMETALLIZATION ■RUGGEDIZEDVSWR20:1 ■INTERNALINPUT/OUTPUTMATCHING ■LOWTHERMALRESISTANCE ■METAL/CERAMICHERMETICPACKAGE ■POUT=250W	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团
MSC81250M	NPN SILICON RF POWER TRANSISTOR DESCRIPTION: TheASIMSC81250MisDesignedforDME/TACANApplicationsupto1150MHz. FEATURES: •InternalInput/OutputMatchingNetworks •PG=6.2dBat250W/1150MHz •Omnigold™MetalizationSystem	ASI Advanced Semiconductor
MSC8126	Quad Digital Signal Processor QuadDigitalSignalProcessor •FourStarCore™SC140DSPextendedcores,eachwithanSC140 DSPcore,224KbyteofinternalSRAMM1memory(1436Kbyte total),16way16Kbyteinstructioncache(ICache),four-entry writebuffer,externalcachesupport,programmableinterrupt contro	freescaleFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体
MSC8126MP8000	Quad Digital Signal Processor QuadDigitalSignalProcessor •FourStarCore™SC140DSPextendedcores,eachwithanSC140 DSPcore,224KbyteofinternalSRAMM1memory(1436Kbyte total),16way16Kbyteinstructioncache(ICache),four-entry writebuffer,externalcachesupport,programmableinterrupt contro	freescaleFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体
MSC8126TMP6400	Quad Digital Signal Processor QuadDigitalSignalProcessor •FourStarCore™SC140DSPextendedcores,eachwithanSC140 DSPcore,224KbyteofinternalSRAMM1memory(1436Kbyte total),16way16Kbyteinstructioncache(ICache),four-entry writebuffer,externalcachesupport,programmableinterrupt contro	freescaleFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体
MSC8126TVT6400	Quad Digital Signal Processor QuadDigitalSignalProcessor •FourStarCore™SC140DSPextendedcores,eachwithanSC140 DSPcore,224KbyteofinternalSRAMM1memory(1436Kbyte total),16way16Kbyteinstructioncache(ICache),four-entry writebuffer,externalcachesupport,programmableinterrupt contro	freescaleFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体
MSC8126VT8000	Quad Digital Signal Processor QuadDigitalSignalProcessor •FourStarCore™SC140DSPextendedcores,eachwithanSC140 DSPcore,224KbyteofinternalSRAMM1memory(1436Kbyte total),16way16Kbyteinstructioncache(ICache),four-entry writebuffer,externalcachesupport,programmableinterrupt contro	freescaleFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体
MSC81325M	RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS DESCRIPTION TheMSC81325MdeviceisahighpowerpulsedtransistorspecificallydesignedforDME/TACANavionicsapplications. ThisdeviceiscapableofwithstandinganinfiniteloadVSWRatanyphaseangleunderfullratedconditions.LowRFthermalresistanceandsemiautomaticbondingtechnique	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团
MSC81350M	RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS DESCRIPTION TheMSC81350MdeviceisahighpowerpulsedtransistorspecificallydesignedforIFFavionicsapplications. Thisdeviceiscapableofwithstandingaminimum20:1loadVSWRatanyphaseangleunderfullratedconditions.LowRFthermalresistanceandsemiautomaticwirebondingtechni	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团
MSC81400M	RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS DESCRIPTION TheMSC81400MSuperPowertransistorisahighpeakpulsepowerdevicespecificallydesignedforDME/TACANavionicsapplications. Thisdeviceiscapableofwithstandingaminimum25:1loadmismatchconditionatanyphaseangleunderfullratedconditions. TheMSC81400Mishousedin	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团
MSC81402	RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIERS APPLICATIONS DESCRIPTION TheMSC81402isa28Volt,ClassC,commonbaseNPNbiploardevicedesignedforgeneralpurposeamplifierapplicationsintheUHFandL-Bandfrequencyrange. Highgainandcollectorefficiencyalongwithextremeruggednessareobtainedusingagoldmetallizedemitter-ballastedoverla	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团
MSC82001	RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS DESCRIPTION TheMSC82001isacommonbasehermeticallysealedsiliconNPNmicrowavetransistorutilizingafishboneemitterballastedgeometrywitharefractory/goldmetallizationsystem.ThisdeviceiscapableofwithstandinganinfiniteloadVSWRatanyphaseangleunderratedratedconditions.	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团
MSC82003	RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS DESCRIPTION TheMSC82003isacommonbasehermeticallysealedsiliconNPNmicrowavetransistorutilizingafishboneemitterballastedgeometrywitharefractory/goldmetallizationsystem.ThisdeviceiscapableofwithstandinganinfiniteloadVSWRatanyphaseangleunderratedratedconditions.	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团
MSC82003	NPN SILICON RF POWER TRANSISTOR DESCRIPTION: TheASIMSC82003isDesignedforGeneralPurposeClassCPowerAmplifierApplicationsupto2300MHz. FEATURES: •PG=10dBmin.at3W/2,000MHz •HermeticMicrostripPackage •Omnigold™MetalizationSystem	ASI Advanced Semiconductor
MSC82005	NPN SILICON RF POWER TRANSISTOR DESCRIPTION: TheASIMSC82005isDesignedforGeneralPurposeClassCPowerAmplifierApplicationsupto2000MHz. FEATURES: •PG=7.0dBmin.at5W/2,000MHz •CommonBase •HermeticMicrostripPackage •Omnigold™MetalizationSystem	ASI Advanced Semiconductor
MSC82005	RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS DESCRIPTION TheMSC82005isacommonbasehermeticallysealedsiliconNPNmicrowavetransistorutilizingafishboneemitterballastedgeometrywitharefractory/goldmetallizationsystem.ThisdeviceiscapableofwithstandinganinfiniteloadVSWRatanyphaseangleunderratedratedconditions.	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团
MSC82010	RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS DESCRIPTION TheMSC82010isacommonbasehermeticallysealedsiliconNPNmicrowavetransistorutilizingafishboneemitterballastedgeometrywitharefractory/goldmetallizationsystem.ThisdeviceiscapableofwithstandinganinfiniteloadVSWRatanyphaseangleunderratedratedconditions.	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团
MSC82040	RF & MICROWAVE TRANSISTORS GENERAL PURPOSE LINEAR APPLICATIONS DESCRIPTION TheMSC82040isahermeticallysealedNPNpowertransistorwithafishbone,emitterfingerballastedgeometryutilizingarefractory/goldmetallizationsystem.ThedeviceisdesignedspecificallyforClassAlinearapplicationstoprovidehighgainandhighoutputpoweratthe1.0dB	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团
MSC82100	RF & MICROWAVE TRANSISTORS GENERAL PURPOSE LINEAR APPLICATIONS DESCRIPTION TheMSC82100isahermeticallysealedNPNpowertransistorwithafishbone,emitterfingerballastedgeometryutilizingarefractory/goldmetallizationsystem.ThedeviceisdesignedspecificallyforClassAlinearapplicationstoprovidehighgainandhighoutputpoweratthe1.0dB	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团
MSC82302	RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS DESCRIPTION TheMSC82302isacommonbasehermeticallysealedsiliconNPNmicrowavepowertransistorutilizingaruggedoverlaydiegeometry.Thisdeviceiscapableofwithstanding20:1loadVSWRatanyphaseangleunderratedconditions. TheMSC82302wasdesignedforClassCAmplifier/Oscillato	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团
MSC82304	RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS DESCRIPTION TheMSC82304isacommonbasehermeticallysealedsiliconNPNmicrowavepowertransistorutilizingaruggedoverlaydiegeometry.Thisdeviceiscapableofwithstanding20:1loadVSWRatanyphaseangleunderratedconditions. TheMSC82304wasdesignedforClassCAmplifier/Oscillato	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团
MSC82306	RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS DESCRIPTION TheMSC82306isacommonbasehermeticallysealedsiliconNPNmicrowavepowertransistorutilizingaruggedoveralydiegeometry.Thisdeviceiscapableofwithstanding20:1loadVSWRatanyphaseangleunderratedconditions. TheMSC82306wasdesignedforClassCAmplifier/Oscillato	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团
MSC82307	RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS DESCRIPTION TheMSC82307isacommonbasehermeticallysealedsiliconNPNmicrowavepowertransistorutilizingaruggedoverlaydiegeometry.Thisdeviceiscapableofwithstanding20:1loadVSWRatanyphaseangleunderratedconditions. TheMSC82307wasdesignedforClassCamplifier/oscillato	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团
MSC83301	RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS DESCRIPTION TheMSC83301isacommonbasehermeticallysealedsiliconNPNmicrowavepowertransistorutilizinganoverlay,emittersiteballastedgeometrywitharefractorygoldmetallizationsystem.ThisdeviceiscapableofwithstandinganinfiniteloadVSWRatanyphaseangleunderratedcondi	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团
MSC83303	RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS DESCRIPTION TheMSC83303isacommonbasehermeticallysealedsiliconNPNmicrowavepowertransistorutilizinganoverlay,emittersiteballastedgeometrywitharefractory/goldmetallizationsystem.ThisdeviceiscapableofwithstandinganinfiniteloadVSWRatanyphaseangleunderratedcondi	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团
MSC83305	RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS DESCRIPTION TheMSC83305isacommonbasehermeticallysealedsiliconNPNmicrowavepowertransistorutilizinganemittersiteballastedgeometrywitharefractorygoldmetallizationsystem.ThisdeviceiscapableofwithstandinganinfiniteloadVSWRatanyphaseangleunderratedconditions.	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团
MSC85623	NPN RF TRANSISTOR DESCRIPTION: TheASIMSC85623isaSiliconNPNMicrowaveTransistorSuppliedinaCommonBasePackage,DesignedforRFAmplifierandOscillatorApplicationsupto3.0GHz.	ASI Advanced Semiconductor
MSC8001	HIGH POWER GaAs FET 文件：18.45 Kbytes Page：1 Pages	ASI Advanced Semiconductor
MSC8004	HIGH POWER GaAs FET 文件：18.25 Kbytes Page：1 Pages	ASI Advanced Semiconductor

MSC8产品属性

类型
描述
型号
MSC8
制造商
Thomas & Betts
功能描述
SHRINK-KON MOTOR STUB SPLICE INSULATOR 14-10 AWG
制造商
Thomas & Betts
功能描述
CONNECTOR; Kit
Contents
Boot Style Insulator with Integral Ty-Rap ;RoHS
Compliant
Yes
制造商
Thomas & Betts
功能描述
Splice Insulators And Insulating Covers

MSC8供应商更多...

更新时间：2025-8-1 17:10:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市明嘉莱科技有限公司	MSC808	N/A	24+	DO	990000	明嘉莱只做原装正品现货	询价
标准国际(香港)有限公司	MSC80196	MSC80196		1	1		询价
深圳市赛美科科技有限公司	MSC808HB	ROHS		ROHS	56520	一级代理原装正品假一罚十价格优势长期供货	询价
深圳市佳鑫美电子科技有限公司	MSC80196	ASI	24+	2LFL	2568	原装优势!绝对公司现货	询价
深圳市欧立现代科技有限公司	MSC8101M1250C	MOT	24+	BGA	6980	原装现货,可开13%税票	询价
深圳市壹芯创科技有限公司	MSC8101	MOTOROLA	22+	BGA	2000	原装正品现货	询价
深圳市百诺芯科技有限公司	MSC80185	ASI	23+	TO-59	8510	原装正品代理渠道价格优势	询价
深圳诚思涵科技有限公司	MSC8101M1250C	MOTOROLA	16+	BGA	2500	进口原装现货/价格优势!	询价
深圳市创新迹电子有限公司	MSC808	N/A	22+	DO	12000	只做原装、原厂优势渠道、假一赔十	询价
深圳市得捷芯城科技有限公司	MSC80197	ASI	24+	NA/	200	优势代理渠道,原装正品,可全系列订货开增值税票	询价

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1路数据采集的ADC/DAC的-专业，CDC电容数字转换器数据采集的ADC/DAC的-专业，DDS直接数字频率合成芯片数据采集的ADC/DAC的-专业，4通道数据采集的ADC/DAC的-专业，DMMADC数据采集ADC/DAC-专用，LQFP-44旋变数字转换器AEC-Q100数据采集ADC/DAC-专用
2020-7-17
MSD7833-Z01-NB2
MSD7833-Z01-NB2深圳市拓亿芯电子有限公司，本公司具备一般纳税人，可开16点增值税票，货源渠道保证原厂原装正品IC，诚信为本，薄利多销。
2019-3-7

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