位置：首页 > IC中文资料第2775页 > MSC8
MSC8价格
参考价格：￥1609.7497
型号：MSC8156SAG1000B 品牌：Motorola 备注：这里有MSC8多少钱，2025年最近7天走势，今日出价，今日竞价，MSC8批发/采购报价，MSC8行情走势销售排行榜，MSC8报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
RF & MICROWAVE TRANSISTORS GENERAL PURPOSE LINEAR APPLICATIONS DESCRIPTION The MSC80185 is a hermetically sealed NPN power transistor featuring a unique matrix structure. This device is specifically designed for Class A linear applications to provide high gain and high output power at the 1.0 dB compression point. ■ EMITTER BALLASTED ■ CLASS A LINEAR OPERA | STMICROELECTRONICS 意法半导体 |   | ||
GENERAL PURPOSE LINEAR APPLICATIONS RF & MICROWAVE TRANSISTORS DESCRIPTION The MSC80185 is a hermetically sealed NPN power transistor featuring a unique matrix structure. This device is specifically designed for Class A linear applications to provide high gain and high output power at the 1.0 dB compression point. ■ EMITTER BALLASTED ■ CLASS A LINEAR OPERA | STMICROELECTRONICS 意法半导体 | | ||
RF & MICROWAVE TRANSISTORS GENERAL PURPOSE LINEAR APPLICATIONS DESCRIPTION The MSC80195 is a hermetically sealed NPN power transistor featuring a unique matrix structure. This device is specifically designed for Class A linear applications to provide high gain and high output power at the 1.0 dB compression point. ■ EMITTER BALLASTED ■ CLASS A LINEAR OPERA | STMICROELECTRONICS 意法半导体 | | ||
RF & MICROWAVE TRANSISTORS GENERAL PURPOSE LINEAR APPLICATIONS DESCRIPTION The MSC80196 is a hermetically sealed NPN power transistor featuring a unique matrix structure. This device is specifically designed for Class A linear applications to provide high gain and high output power at the 1.0 dB compression point. ■ EMITTER BALLASTED ■ CLASS A LINEAR OPERA | STMICROELECTRONICS 意法半导体 | | ||
NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI MSC80196 is Designed for Class A Linear Applications up to 2.0 GHz. FEATURES: • Class A Operation • PG = 7.0 dB at 1.0 W/2.0 GHz • Omnigold™ Metalization System | ASI | | ||
RF & MICROWAVE TRANSISTORS GENERAL PURPOSE LINEAR APPLICATIONS DESCRIPTION The MSC80197 is a hermetically sealed NPN power transistor featuring a unique matrix structure. This device is specifically designed for Class A linear applications to provide high gain and high output power at the 1.0 dB compression point. ■ EMITTER BALLASTED ■ CLASS A LINEAR OPERA | STMICROELECTRONICS 意法半导体 | | ||
NPN RF TRANSISTOR DESCRIPTION: The ASI MSC80213 is a Silicon NPN Microwave Transistor Supplied in a Common Base Package, Designed for general purpose Applications up to 2.3 GHz. FEATURES: • Hermetically Sealed Package • Gold Metallization | ASI | | ||
NPN RF TRANSISTOR DESCRIPTION: The ASI MSC80278 is a Silicon NPN Microwave Transistor Supplied in a Common Emitter Package, Designed for linear Applications. FEATURES: • Emitter Ballasted • Gold Metallization • Hermetically sealed Package | ASI | | ||
NPN SILICON RF MICROWAVE TRANSISTOR DESCRIPTION: The ASI MSC80917 is low level Class-C, Common Base Device Designed for IFF, DME driver Applications. FEATURES INCLUDE: • Omnigold™ Metalization System • POUT 4.0 W Min. • GP = 10 dB | ASI | | ||
RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS DESCRIPTION The MSC81002 is a common base hermetically sealed silicon NPN microwave transistor utilizing a fishbone, emitter ballasted geometry with a refractory/gold metallization system. This device is capable of withstanding an infinite load VSWR at any phase angle under rated conditions. The | STMICROELECTRONICS 意法半导体 | | ||
RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS DESCRIPTION The MSC81005 is a common base hermetically sealed silicon NPN microwave transistor utilizing a fishbone emitter ballasted geometry with a refractory/gold metallization system. This device is capable of withstanding an infinite load VSWR at any phase angle under rated rated conditions. | STMICROELECTRONICS 意法半导体 | | ||
RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS DESCRIPTION The MSC81010 is a common base hermetically sealed silicon NPN microwave transistor utilizing a fishbone, emitter ballasted geometry with a refractory/gold metallization system. This device is capable of withstanding infinite load VSWR at any phase angle under rated conditions. The MS | STMICROELECTRONICS 意法半导体 | | ||
RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS DESCRIPTION The MSC81020 is a common base hermetically sealed silicon NPN microwave tranisitor utilizing a fishbone emitter ballasted geometry with a refractory/gold metallization system. This device is designed for Class C amplifier applications in the 0.4 - 1.2 GHz frequency range. . EMI | STMICROELECTRONICS 意法半导体 | | ||
RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS DESCRIPTION The MSC81035M is a medium power Class C transistor designed specifically for pulsed L-Band avionics applications. This device is a direct replacement for the MSC1035M. MSC81035M offers improved saturated ouput power and collector efficiency based on the test circuit described herein. | STMICROELECTRONICS 意法半导体 | | ||
NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI MSC81035M is a common base device, medium power Class C transistor for pulsed L-Band avionics, DME/TACAN Applications. FEATURES: • Input matching • Emitter site Ballasted. • PG = 10 dB at 35 W/1150 MHz • Omnigold™ Metalization System | ASI | | ||
RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS DESCRIPTION The MSC81035MP is a medium power Class C transistor designed specifically for pulsed L-Band avionics applications. This device is a direct replacement for the MSC1035MP. MSC81035MP of fers improved saturated ouput power and collector efficiency based on the test circuit described he | STMICROELECTRONICS 意法半导体 | | ||
NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI MSC81058 is Designed for General Purpose Class C Power Amplifier Applications up to 1.2 GHz. FEATURES: • PG= 10 dB min. at 10 W/ 1.0 GHz • Hermetic Microstrip Package • Omnigold™ Metalization System • Emitter Ballasted | ASI | | ||
RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS DESCRIPTION The MSC81058 is a common base hermetically sealed silicon NPN microwave transistor utilizing a fishbone, emitter ballasted geometry with a refractory/gold metallization system. This device is capable of withstanding infinite load VSWR at any phase angle under rated conditions. The MS | STMICROELECTRONICS 意法半导体 | | ||
NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI MSC81090 is Designed for General Purpose Class A Power Amplifier Applications from 0.4 - 1.2 GHz. FEATURES: • PG = 10 dB min. at 2.0 W/ 1.0 GHz • Hermetically sealed Package • Omnigold™ Metalization System • Emitter Ballasted | ASI | | ||
RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS DESCRIPTION The MSC81111 is a common base hermetically sealed silicon NPN microwave transistor utilizing a fishbone emitter ballasted geometry with a refractory/gold metallization system. This device is capable of withstanding an infinite load VSWR at any phase angle under rated rated conditions. | STMICROELECTRONICS 意法半导体 | | ||
NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The MSC81111 is Designed for Class C Amplifier Applicatioons from 0.4 to 1.2 GHz, Supplied in Common Base Package. | ASI | | ||
RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS DESCRIPTION The MSC81118 is a common base hermetically sealed silicon NPN microwave transistor utilizing a fishbone, emitter ballasted geometry with a refractory/gold metallization system. This device is capable of withstanding an infinite load VSWR at any phase angle under rated conditions. The | STMICROELECTRONICS 意法半导体 | | ||
Quad Core 16-Bit Digital Signal Processor Quad Digital Signal Processor • Four StarCore™ SC140 DSP extended cores, each with an SC140 DSP core, 224 Kbyte of internal SRAM M1 memory (1436 Kbyte total), 16 way 16 Kbyte instruction cache (ICache), four-entry write buffer, external cache support, programmable interrupt contro | freescaleFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体 | | ||
Quad Core 16-Bit Digital Signal Processor Quad Digital Signal Processor • Four StarCore™ SC140 DSP extended cores, each with an SC140 DSP core, 224 Kbyte of internal SRAM M1 memory (1436 Kbyte total), 16 way 16 Kbyte instruction cache (ICache), four-entry write buffer, external cache support, programmable interrupt contro | freescaleFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体 | | ||
Quad Core 16-Bit Digital Signal Processor Quad Digital Signal Processor • Four StarCore™ SC140 DSP extended cores, each with an SC140 DSP core, 224 Kbyte of internal SRAM M1 memory (1436 Kbyte total), 16 way 16 Kbyte instruction cache (ICache), four-entry write buffer, external cache support, programmable interrupt contro | freescaleFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体 | | ||
Quad Core 16-Bit Digital Signal Processor Quad Digital Signal Processor • Four StarCore™ SC140 DSP extended cores, each with an SC140 DSP core, 224 Kbyte of internal SRAM M1 memory (1436 Kbyte total), 16 way 16 Kbyte instruction cache (ICache), four-entry write buffer, external cache support, programmable interrupt contro | freescaleFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体 | | ||
Quad Core 16-Bit Digital Signal Processor Quad Digital Signal Processor • Four StarCore™ SC140 DSP extended cores, each with an SC140 DSP core, 224 Kbyte of internal SRAM M1 memory (1436 Kbyte total), 16 way 16 Kbyte instruction cache (ICache), four-entry write buffer, external cache support, programmable interrupt contro | freescaleFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体 | | ||
Quad Core 16-Bit Digital Signal Processor Quad Digital Signal Processor • Four StarCore™ SC140 DSP extended cores, each with an SC140 DSP core, 224 Kbyte of internal SRAM M1 memory (1436 Kbyte total), 16 way 16 Kbyte instruction cache (ICache), four-entry write buffer, external cache support, programmable interrupt contro | freescaleFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体 | | ||
Quad Core 16-Bit Digital Signal Processor Quad Digital Signal Processor • Four StarCore™ SC140 DSP extended cores, each with an SC140 DSP core, 224 Kbyte of internal SRAM M1 memory (1436 Kbyte total), 16 way 16 Kbyte instruction cache (ICache), four-entry write buffer, external cache support, programmable interrupt contro | freescaleFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体 | | ||
Quad Core 16-Bit Digital Signal Processor Quad Digital Signal Processor • Four StarCore™ SC140 DSP extended cores, each with an SC140 DSP core, 224 Kbyte of internal SRAM M1 memory (1436 Kbyte total), 16 way 16 Kbyte instruction cache (ICache), four-entry write buffer, external cache support, programmable interrupt contro | freescaleFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体 | | ||
Quad Core 16-Bit Digital Signal Processor Quad Digital Signal Processor • Four StarCore™ SC140 DSP extended cores, each with an SC140 DSP core, 224 Kbyte of internal SRAM M1 memory (1436 Kbyte total), 16 way 16 Kbyte instruction cache (ICache), four-entry write buffer, external cache support, programmable interrupt contro | freescaleFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体 | | ||
RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS DESCRIPTION The MSC81250M device is a high power pulsed transistor specifically designed for DME/TACAN avionics applications. ■ REFRACTORYGOLD METALLIZATION ■ RUGGEDIZED VSWR 20:1 ■ INTERNAL INPUT/OUTPUT MATCHING ■ LOW THERMAL RESISTANCE ■ METAL/CERAMIC HERMETIC PACKAGE ■ POUT = 250 W | STMICROELECTRONICS 意法半导体 | | ||
NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI MSC81250M is Designed for DME/TACAN Applications up to 1150 MHz. FEATURES: • Internal Input/Output Matching Networks • PG = 6.2 dB at 250 W/1150 MHz • Omnigold™ Metalization System | ASI | | ||
Quad Digital Signal Processor Quad Digital Signal Processor • Four StarCore™ SC140 DSP extended cores, each with an SC140 DSP core, 224 Kbyte of internal SRAM M1 memory (1436 Kbyte total), 16 way 16 Kbyte instruction cache (ICache), four-entry write buffer, external cache support, programmable interrupt contro | freescaleFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体 | | ||
Quad Digital Signal Processor Quad Digital Signal Processor • Four StarCore™ SC140 DSP extended cores, each with an SC140 DSP core, 224 Kbyte of internal SRAM M1 memory (1436 Kbyte total), 16 way 16 Kbyte instruction cache (ICache), four-entry write buffer, external cache support, programmable interrupt contro | freescaleFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体 | | ||
Quad Digital Signal Processor Quad Digital Signal Processor • Four StarCore™ SC140 DSP extended cores, each with an SC140 DSP core, 224 Kbyte of internal SRAM M1 memory (1436 Kbyte total), 16 way 16 Kbyte instruction cache (ICache), four-entry write buffer, external cache support, programmable interrupt contro | freescaleFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体 | | ||
Quad Digital Signal Processor Quad Digital Signal Processor • Four StarCore™ SC140 DSP extended cores, each with an SC140 DSP core, 224 Kbyte of internal SRAM M1 memory (1436 Kbyte total), 16 way 16 Kbyte instruction cache (ICache), four-entry write buffer, external cache support, programmable interrupt contro | freescaleFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体 | | ||
Quad Digital Signal Processor Quad Digital Signal Processor • Four StarCore™ SC140 DSP extended cores, each with an SC140 DSP core, 224 Kbyte of internal SRAM M1 memory (1436 Kbyte total), 16 way 16 Kbyte instruction cache (ICache), four-entry write buffer, external cache support, programmable interrupt contro | freescaleFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体 | | ||
RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS DESCRIPTION The MSC81325M device is a high power pulsed transistor specifically designed for DME/TACAN avionics applications. This device is capable of withstanding an infinite load VSWR at any phase angle under full rated conditions. Low RF thermal resistance and semiautomatic bonding technique | STMICROELECTRONICS 意法半导体 | | ||
RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS DESCRIPTION The MSC81350M device is a high power pulsed transistor specifically designed for IFF avionics applications. This device is capable of withstanding a minimum 20:1 load VSWR at any phase angle under full rated conditions. Low RF thermal resistance and semi automatic wire bonding techni | STMICROELECTRONICS 意法半导体 | | ||
RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS DESCRIPTION The MSC81400M Super Power transistor is a high peak pulse power device specifically designed for DME/TACAN avionics applications. This device is capable of withstanding a minimum 25:1 load mismatch condition at any phase angle under full rated conditions. The MSC81400M is housed in | STMICROELECTRONICS 意法半导体 | | ||
RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIERS APPLICATIONS DESCRIPTION The MSC81402 is a 28 Volt, Class C, common base NPN biploar device designed for general purpose amplifier applications in the UHF and L-Band frequency range. High gain and collector efficiency along with extreme ruggedness are obtained using a gold metallized emitter-ballasted overla | STMICROELECTRONICS 意法半导体 | | ||
RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS DESCRIPTION The MSC82001 is a common base hermetically sealed silicon NPN microwave transistor utilizing a fishbone emitter ballasted geometry with a refractory/gold metallization system. This device is capable of withstanding an infinite load VSWR at any phase angle under rated rated conditions. | STMICROELECTRONICS 意法半导体 | | ||
RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS DESCRIPTION The MSC82003 is a common base hermetically sealed silicon NPN microwave transistor utilizing a fishbone emitter ballasted geometry with a refractory/gold metallization system. This device is capable of withstanding an infinite load VSWR at any phase angle under rated rated conditions. | STMICROELECTRONICS 意法半导体 | | ||
NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI MSC82003 is Designed for General Purpose Class C Power Amplifier Applications up to 2300 MHz. FEATURES: • PG = 10 dB min. at 3 W/ 2,000 MHz • Hermetic Microstrip Package • Omnigold™ Metalization System | ASI | | ||
NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI MSC82005 is Designed for General Purpose Class C Power Amplifier Applications up to 2000 MHz. FEATURES: • PG = 7.0 dB min. at 5W/ 2,000 MHz • Common Base • Hermetic Microstrip Package • Omnigold™ Metalization System | ASI | | ||
RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS DESCRIPTION The MSC82005 is a common base hermetically sealed silicon NPN microwave transistor utilizing a fishbone emitter ballasted geometry with a refractory/gold metallization system. This device is capable of withstanding an infinite load VSWR at any phase angle under rated rated conditions. | STMICROELECTRONICS 意法半导体 | | ||
RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS DESCRIPTION The MSC82010 is a common base hermetically sealed silicon NPN microwave transistor utilizing a fishbone emitter ballasted geometry with a refractory/gold metallization system. This device is capable of withstanding an infinite load VSWR at any phase angle under rated rated conditions. | STMICROELECTRONICS 意法半导体 | | ||
RF & MICROWAVE TRANSISTORS GENERAL PURPOSE LINEAR APPLICATIONS DESCRIPTION The MSC82040 is a hermetically sealed NPN power transistor with a fishbone, emitter finger ballasted geometry utilizing a refractory/gold metallization system. The device is designed specifically for Class A linear applications to provide high gain and high output power at the 1.0 dB | STMICROELECTRONICS 意法半导体 | | ||
RF & MICROWAVE TRANSISTORS GENERAL PURPOSE LINEAR APPLICATIONS DESCRIPTION The MSC82100 is a hermetically sealed NPN power transistor with a fishbone, emitter finger ballasted geometry utilizing a refractory/gold metallization system. The device is designed specifically for Class A linear applications to provide high gain and high output power at the 1.0 dB | STMICROELECTRONICS 意法半导体 | | ||
RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS DESCRIPTION The MSC82302 is a common base hermetically sealed silicon NPN microwave power transistor utilizing a rugged overlay die geometry. This device is capable of withstanding 20:1 load VSWR at any phase angle under rated conditions. The MSC82302 was designed for Class C Amplifier/Oscillato | STMICROELECTRONICS 意法半导体 | | ||
RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS DESCRIPTION The MSC82304 is a common base hermetically sealed silicon NPN microwave power transistor utilizing a rugged overlay die geometry. This device is capable of withstanding 20:1 load VSWR at any phase angle under rated conditions. The MSC82304 was designed for Class C Amplifier/Oscillato | STMICROELECTRONICS 意法半导体 | | ||
RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS DESCRIPTION The MSC82306 is a common base hermetically sealed silicon NPN microwave power transistor utilizing a rugged overaly die geometry. This device is capable of withstanding 20:1 load VSWR at any phase angle under rated conditions. The MSC82306 was designed for Class C Amplifier/Oscillato | STMICROELECTRONICS 意法半导体 | | ||
RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS DESCRIPTION The MSC82307 is a common base hermetically sealed silicon NPN microwave power transistor utilizing a rugged overlay die geometry. This device is capable of withstanding 20:1 load VSWR at any phase angle under rated conditions. The MSC82307 was designed for Class C amplifier/oscillato | STMICROELECTRONICS 意法半导体 | | ||
RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS DESCRIPTION The MSC83301 is a common base hermetically sealed silicon NPN microwave power transistor utilizing an overlay, emitter site ballasted geometry with a refractory gold metallization system. This device is capable of withstanding an infinite load VSWR at any phase angle under rated condi | STMICROELECTRONICS 意法半导体 | | ||
RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS DESCRIPTION The MSC83303 is a common base hermetically sealed silicon NPN microwave power transistor utilizing an overlay, emitter site ballasted geometry with a refractory/gold metallization system. This device is capable of withstanding an infinite load VSWR at any phase angle under rated condi | STMICROELECTRONICS 意法半导体 | | ||
RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS DESCRIPTION The MSC83305 is a common base hermetically sealed silicon NPN microwave power transistor utilizing an emitter site ballasted geometry with a refractory gold metallization system. This device is capable of withstanding an infinite load VSWR at any phase angle under rated conditions. | STMICROELECTRONICS 意法半导体 | | ||
NPN RF TRANSISTOR DESCRIPTION: The ASI MSC85623is a Silicon NPN Microwave Transistor Supplied in a Common Base Package, Designed for RF Amplifier and Oscillator Applications up to 3.0 GHz. | ASI | | ||
HIGH POWER GaAs FET 文件：18.45 Kbytes Page：1 Pages | ASI | | ||
HIGH POWER GaAs FET 文件：18.25 Kbytes Page：1 Pages | ASI | |
MSC8产品属性
- 类型
描述
- 型号
MSC8
- 制造商
Thomas & Betts
- 功能描述
SHRINK-KON MOTOR STUB SPLICE INSULATOR 14-10 AWG
- 制造商
Thomas & Betts
- 功能描述
CONNECTOR; Kit
- Contents
Boot Style Insulator with Integral Ty-Rap ;RoHS
- Compliant
Yes
- 制造商
Thomas & Betts
- 功能描述
Splice Insulators And Insulating Covers
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ASI |
23+ |
TO-59 |
8510 |
原装正品代理渠道价格优势 |
|||
FREESCAL |
25+23+ |
BGA |
19699 |
绝对原装正品全新进口深圳现货 |
|||
MOTOROLA |
16+ |
BGA |
2500 |
进口原装现货/价格优势! |
|||
MOTOROLA |
22+ |
BGA |
2000 |
原装正品现货 |
|||
MOT |
24+ |
BGA |
6980 |
原装现货,可开13%税票 |
|||
N/A |
2023+ |
DO |
8800 |
正品渠道现货 终端可提供BOM表配单。 |
|||
ASI |
23+ |
TO-59 |
10000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
FREESCALE |
25+ |
BGA |
1250 |
大量现货库存,提供一站式服务! |
|||
ASI |
23+ |
50000 |
全新原装正品现货,支持订货 |
||||
N/A |
25+ |
DO |
54648 |
百分百原装现货 实单必成 欢迎询价 |
MSC8规格书下载地址
MSC8参数引脚图相关
- oled发光材料
- OLED材料
- ogs
- OEM
- nvidia
- ntc热敏电阻
- nrf24l01
- nfc芯片
- NFC
- ne555定时器
- ne555
- nand闪存
- n74
- n100
- mxt
- murata
- mt7201
- mt6795
- msm8625q
- msm7227a
- MSCD60-08
- MSCD36-16
- MSCD36-08
- MSCD202
- MSCD200-16
- MSCD200-08
- MSCD165-16
- MSCD120-16
- MSCD120-12
- MSCD104
- MSCD100-16
- MSCD100-12
- MSC-C202DGEW-1W
- MSC-C162DGRN-16W
- MSC-C162DGEW-4W
- MSC-C161DGLY-1W
- MSC-BA4
- MSC-AMS915-EK
- MSC-AMS868-EK
- MSC-AMS434-EK
- MSC-9S
- MSC8256
- MSC8254
- MSC8252
- MSC8251
- MSC8156SAG1000B
- MSC8156
- MSC8154
- MSC8152
- MSC8151
- MSC8144
- MSC8126
- MSC8122
- MSC8113
- MSC8112
- MSC8103
- MSC8102
- MSC8101
- MSC8004
- MSC8001
- MSC-750
- MSC7171
- MSC7166
- MSC7165
- MSC7128
- MSC7119
- MSC7118
- MSC7116VM1000
- MSC7116
- MSC7110
- MSC64A
- MSC60
- MSC-5S
- MSC-5D
- MSC4W50T15-L6
- MSC4003
- MSC4001
- MSC4000
- MSC-350
- MSC330V88
- MSC330V72
- MSC330V53
- MSC330V43
- MSC330V36
- MSC330V270
- MSC330V216
- MSC330V21
- MSC330V161
- MSC330V145
- MSC330V124
- MSC330V108
- MSC32W
- MSC32T
- MSC32D
- MSC2712GT1G
- MSC250V72
- MSC250V25
- MSC250V216
- MSC250V161
- MSC250V145
MSC8数据表相关新闻
MS90C386B微控制器
MS90C386B
2025-6-24MS583702BA01-50
MS583702BA01-50
2023-2-22MSD93F0JM4-3-002J假一罚十
做的是诚信，卖的是良心。
2021-2-3MSD3663LUA-Z1
QFP128
2020-10-28MSC1210Y3PAGT
1路数据采集的ADC / DAC的-专业，CDC电容数字转换器数据采集的ADC / DAC的-专业，DDS直接数字频率合成芯片数据采集的ADC / DAC的-专业，4通道数据采集的ADC / DAC的-专业，DMM ADC数据采集ADC / DAC-专用，LQFP-44旋变数字转换器AEC-Q100数据采集ADC / DAC-专用
2020-7-17MSD7833-Z01-NB2
MSD7833-Z01-NB2 深圳市拓亿芯电子有限公司，本公司具备一般纳税人，可开16点增值税票， 货源渠道保证原厂原装正品IC，诚信为本，薄利多销。
2019-3-7
DdatasheetPDF页码索引
- P1
- P2
- P3
- P4
- P5
- P6
- P7
- P8
- P9
- P10
- P11
- P12
- P13
- P14
- P15
- P16
- P17
- P18
- P19
- P20
- P21
- P22
- P23
- P24
- P25
- P26
- P27
- P28
- P29
- P30
- P31
- P32
- P33
- P34
- P35
- P36
- P37
- P38
- P39
- P40
- P41
- P42
- P43
- P44
- P45
- P46
- P47
- P48
- P49
- P50
- P51
- P52
- P53
- P54
- P55
- P56
- P57
- P58
- P59
- P60
- P61
- P62
- P63
- P64
- P65
- P66
- P67
- P68
- P69
- P70
- P71
- P72
- P73
- P74
- P75
- P76
- P77
- P78
- P79
- P80
- P81
- P82
- P83
- P84
- P85
- P86
- P87
- P88
- P89
- P90
- P91
- P92
- P93
- P94
- P95
- P96
- P97
- P98
- P99
- P100
- P101
- P102
- P103
- P104
- P105
- P106
- P107
