NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The ASI MSC81250M is Designed for DME/TACAN Applications up to 1150 MHz. FEATURES: • Internal Input/Output Matching Networks • PG = 6.2 dB at 250 W/1150 MHz • Omnigold™ Metalization System

RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS

DESCRIPTION The MSC81250M device is a high power pulsed transistor specifically designed for DME/TACAN avionics applications. ■ REFRACTORYGOLD METALLIZATION ■ RUGGEDIZED VSWR 20:1 ■ INTERNAL INPUT/OUTPUT MATCHING ■ LOW THERMAL RESISTANCE ■ METAL/CERAMIC HERMETIC PACKAGE ■ POUT = 250 W

RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS

NPN SILICON RF POWER TRANSISTOR

NON-VOLATILE MEMORY/NON-VOLATILE RAM

NON-VOLATILE MEMORY/NON-VOLATILE RAM

NON-VOLATILE MEMORY/NON-VOLATILE RAM

NON-VOLATILE MEMORY/NON-VOLATILE RAM

NON-VOLATILE MEMORY/NON-VOLATILE RAM

NON-VOLATILE MEMORY/NON-VOLATILE RAM

HIGH-PRECISION VOLTAGE REGULATOR

The S-812XXSG Series is a three-terminal positive voltage regulator made using the CMOS process. Since the S-812XXSG Series has higher precision output voltage and consumes less current than existing three-terminal voltage regulators, battery-powered portable equipment can have a higher performanc