DESCRIPTION

The MSC81325M device is a high power pulsed transistor specifically designed for DME/TACAN avionics applications.

This device is capable of withstanding an infinite load VSWR at any phase angle under full rated conditions. Low RF thermal resistance and semiautomatic bonding techniques ensure high reliability and product consistency.

The MSC81325M is housed in the industry-standard AMPAC™ metal/ceramic hermetic package with internal input/output matching structures.

■ REFRACTORY/GOLD METALLIZATION

■ EMITTER BALLASTED

■ RUGGEDIZED VSWR ∞:1

■ INPUT/OUTPUT MATCHING

■ OVERLAY GEOMETRY

■ METAL/CERAMIC HERMETIC PACKAGE

■ POUT = 325 W MIN. WITH 6.7 dB GAIN