SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER

VOLTAGE 40 to 200 Volts CURRENT 1.0 Amperes FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O • For surface mounted applications • Low profile package • Built-in strain relief • Metal to silicon rectifier. majority carrier conduction • Low power loss,

SURFACE MOUNT SCHOTTKY BARRIER BRIDGE RECTIFIER

FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O • Metal to silicon rectifier. majority carrier conduction • Guard ring for overvoltage protection • Low power loss,high efficiency • For surface mounted applications • High current capacity ,Low forward

RF & MICROWAVE TRANSISTORS

DESCRIPTION The MS1401 is a 7.5 V Class C epitaxial silicon NPN planar transistor designed primarily for VHF communications. It withstands severe mismatch under operating conditions. KEY FEATURES ■ 150 MHz ■ 7.5 Volts ■ Common Emitter ■ POUT = 2.5 W Min. ■ GP = 11.0 dB Gain APPLICATIONS/BE

RF AND MICROWAVE TRANSISTORS VHF PORTABLE/MOBILE APPLICATIONS

DESCRIPTION: The MS1401 is a 7.5 V Class C epitaxial silicon NPN planar transistor designed primarily for VHF communications. It withstands severe mismatch under operating conditions. Features • 150 MHz • 7.5 Volts • Common Emitter • POUT = 2.5 W Min. • GP = 11.0 dB Gain

RF & MICROWAVE TRANSISTORS

DESCRIPTION The MS1402 is a 12.5 V Class C epitaxial silicon NPN planar transistor designed primarily for UHF communications. This device utilizes improved metallization to achieve infinite VSWR at rated operating conditions. KEY FEATURES ◾ 450 - 512 MHz ◾ 12.5 Volts ◾ Efficiency 55 ◾ POUT =

RF AND MICROWAVE TRANSISTORS UHF MOBILE APPLICATIONS

DESCRIPTION: The MS1402 is a 12.5 V Class C epitaxial silicon NPN planar transistor designed primarily for UHF communications. This device utilizes improved metallization to achieve infinite VSWR at rated operating conditions. Features • 450 - 512 MHz • 12.5 Volts • Efficiency 55 • POUT = 2.

RF AND MICROWAVE TRANSISTORS VHF PORTABLE/MOBILE APPLICATIONS

DESCRIPTION: The MS1403 is a 7.5 V epitaxial silicon NPN planar transistor designed primarily for VHF communications. It withstands very high VSWR under rated operating conditions. Features • 175 MHz • 7.5 Volts • Common Emitter • POUT = 1.4 W Min. • GP = 7.0 dB Gain

RF & MICROWAVE TRANSISTORS

DESCRIPTION The MS1403 is a 7.5 V epitaxial silicon NPN planar transistor designed primarily for VHF communications. It withstands very high VSWR under rated operating conditions. KEY FEATURES ◾ 175 MHz ◾ 7.5 Volts ◾ Common Emitter ◾ POUT = 1.4 W Min. ◾ GP = 7.0 dB Gain APPLICATIONS/BENEFI

RF & MICROWAVE TRANSISTORS UHF MOBILE APPLICATIONS

DESCRIPTION: The MS1404 is a 12.5V Class C epitaxial silicon NPN planar transistor designed primarily for UHF communications. This device utilizes improved metallization to achieve infinite VSWR at rated operating conditions. Features • 470 MHz • 12.5 VOLTS • POUT = 5.0 WATT • GP = 8.5 dB MI

Inductors Military, MIL-PRF-15305 Qualified, Type LT, Molded

FEATURES • Wide inductance range in small package • Flame retardant coating • Precision performance, excellent reliability, sturdy construction • Epoxy molded construction provides superior moisture protection

RF & MICROWAVE TRANSISTORS FM MOBILE APPLICATIONS

DESCRIPTION: The MS1406 is a silicon NPN transistor designed for 12.5V AM Class C amplifiers operating in the 118–136 MHz aviation band and for 28V FM Class C amplifiers used in ground station transmitters. Diffused emitter ballast and gold metalization provide maximum ruggedness and reliability.

RF AND MICROWAVE TRANSISTORS 108-152MHz APPLICATIONS

DESCRIPTION: The MS1408 is a 28 volt epitaxial silicon NPN planar transistor designed for 108-152MHz AM class C and FM communications. This device utilizes diffused emitter resisters to achieve VSWR at rated operating conditions. Features ● FM CLASS C TRANSISTOR ● FREQUENCY 136MHz ● VOLTAGE 2

RF AND MICROWAVE TRANSISTORS 108-152MHz APPLICATIONS

DESCRIPTION: The MS1408 is a 28 volt epitaxial silicon NPN planar transistor designed for 108-152MHz AM class C and FM communications. This device utilizes diffused emitter resisters to achieve VSWR at rated operating conditions. Features • FM CLASS C TRANSISTOR • FREQUENCY 136MHz • VOLTAGE 2

RF & MICROWAVE TRANSISTOR VHF COMMUNICATIONS

DESCRIPTION: The MS1409 is a NPN silicon transistor designed for high power gain VHF and UHF communication applications. Gold metalization and diffused emitter ballast resistors provide superior long term reliability. Features • 175 MHz • 28 VOLTS • POUT = 2.5 W • GP = 10 dB

0.4 SINGLE DIGIT NUMERIC DISPLAYS

0.4 SINGLE DIGIT NUMERIC DISPLAYS

0.4 SINGLE DIGIT NUMERIC DISPLAYS

0.4 SINGLE DIGIT NUMERIC DISPLAYS

RF & MICROWAVE TRANSISTORS UHF MOBILE APPLICATIONS

DESCRIPTION: The MS1426 is a epitaxial silicon NPN planar transistor designed for Class C driver applications in the 450 - 512 MHz frequency range. This device uses an emitter ballasted die geometry specifically designed for optimum stable power gain, maximum efficiency and infinite VSWR capabi

0.39 SINGLE DIGIT NUMERIC DISPLAYS

0.39 SINGLE DIGIT NUMERIC DISPLAYS

RF & MICROWAVE TRANSISTORS 800-960 MHz BASE STATION APPLICATIONS

DESCRIPTION: The MS1451 is a gold metallized silicon NPN planar transistor designed for high linearity Class AB operation in cellular base station applications. The MS1451 is designed as a medium power output device or as the driver for MS1452. Diffused emitter ballast resistors provide thermal s

PC Board Mountable Pressure Sensor

The MS1451 is a piezoresistive silicon pressure sensor packaged in a surface mount configuration. It is intended for high volume applications where small size, light weight, low cost, and compatibility with automated assembly equipment are required. FEATURES Surface Mount Package ±0.25

RF & MICROWAVE TRANSISTORS 800-900 MHz BASE STATION APPLICATIONS

DESCRIPTION: The MS1452 is a gold metallized epitaxial silicon NPN planar transistor using diffused emitter ballast resistors for high linearity Class AB operation in cellular base station application. Features • 800-900 MHz • 24 VOLTS • COMMON EMITTER • GOLD METALLIZATION • INTERNAL INPUT

RF & MICROWAVE TRANSISTORS 800-900 MHz BASESTATION APPLICATIONS

DESCRIPTION: The MS1453 is a gold metallized epitaxial silicon NPN planar transistor using diffused emitter ballast resistors for high linearity Class AB operation in cellular base station applications. RF & MICROWAVE TRANSISTORS 800-900 MHz BASESTATION APPLICATIONS Features

RF AND MICROWAVE TRANSISTORS 806-960 MHZ CELLULAR BASE STATIONS

DESCRIPTION: The MS1454 gold/metallized epitaxial silicon NPN planar transistor uses diffused emitter ballast resistors for high linearity class AB operation in cellular base station applications. Features · Gold Metallization · Diffused Emitter Ballasting · Internal Input Matching · Des

RF & MICROWAVE TRANSISTORS 800 - 900 MHz APPLICATIONS

DESCRIPTION: The MS1455 is a 12.5 V Class C epitaxial silicon NPN planar transistor designed for amplifier applications in the 806-866 MHz frequency range. Internal impedance matching assures optimum gain and efficiency across the entire frequency band. Gold metalization and emitter ballast resis

RF & MICROWAVE TRANSISTORS UHF MOBILE APPLICATIONS

DESCRIPTION: The MS1480 is an epitaxial silicon NPN planar transistor designed primarily for 12.5 V Class C UHF communications. This device utilizes diffused emitter resistors to achieve infinite VSWR capability under specified operating conditions. Features • 470 MHz • 12.5 VOLTS • POUT = 45

RF & MICROWAVE TRANSISTORS UHF MOBILE APPLICATIONS

DESCRIPTION: The MS1490 is a 12.5 volt silicon NPN transistor designed primarily for UHF communications. The device utilizes an emitter ballasted die geometry capable of operating into an infinite load VSWR under specified operating conditions. Features • 512 MHz • 12.5 VOLTS • POUT = 50 W •

SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER

VOLTAGE 40 to 200 Volts CURRENT 1.0 Amperes FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O • For surface mounted applications • Low profile package • Built-in strain relief • Metal to silicon rectifier. majority carrier conduction • Low power loss,

CONNECTORS, ELECTRIC, RECTANGULAR, NONENVIRONMENTAL, MINIATURE, POLARIZED SHELL, RACK AND PANEL, GENERAL SPECIFCATION FOR

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SH-POTS Chipset with GCI Interface

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RF/Microwave Si BJT Power Devices & Pallets

封装/外壳：轴向 描述：FIXED IND 33UH 165MA 3 OHM TH 电感器，线圈，扼流圈 固定电感器

封装/外壳：轴向 描述：FIXED IND 33UH 165MA 3 OHM TH 电感器，线圈，扼流圈 固定电感器

MS14 Series Military Solid State Relay

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MS14 Series Military Solid State Relay

文件：57.58 Kbytes Page：2 Pages

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