RF & MICROWAVE TRANSISTORS

DESCRIPTION The MS1401 is a 7.5 V Class C epitaxial silicon NPN planar transistor designed primarily for VHF communications. It withstands severe mismatch under operating conditions. KEY FEATURES ■ 150 MHz ■ 7.5 Volts ■ Common Emitter ■ POUT = 2.5 W Min. ■ GP = 11.0 dB Gain APPLICATIONS/BE

RF AND MICROWAVE TRANSISTORS VHF PORTABLE/MOBILE APPLICATIONS

DESCRIPTION: The MS1401 is a 7.5 V Class C epitaxial silicon NPN planar transistor designed primarily for VHF communications. It withstands severe mismatch under operating conditions. Features • 150 MHz • 7.5 Volts • Common Emitter • POUT = 2.5 W Min. • GP = 11.0 dB Gain

SH-POTS Chipset with GCI Interface

SH-POTS Chipset with PCM/SPI Interface

PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR?

General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. Polyfet process features gold metal for greatly extended lifetim

Silicon PNP epitaxial planer transistor

Silicon PNP epitaxial planer transistor For general amplification ■ Features ● Two elements incorporated into one package. (Emitter-coupled transistors) ● Reduction of the mounting area and assembly cost by one half.

Silicon PNP epitaxial planer transistor

Silicon PNP epitaxial planar type For general amplification ■ Features • Two elements incorporated into one package (Emitter-coupled transistors) • Reduction of the mounting area and assembly cost by one half

Silicon NPN Phototransistors

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Power plug for the universal mains

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