RF & MICROWAVE TRANSISTORS 800-900 MHz BASESTATION APPLICATIONS

DESCRIPTION: The MS1453 is a gold metallized epitaxial silicon NPN planar transistor using diffused emitter ballast resistors for high linearity Class AB operation in cellular base station applications. RF & MICROWAVE TRANSISTORS 800-900 MHz BASESTATION APPLICATIONS Features

RF & MICROWAVE TRANSISTORS 800-900 MHz BASESTATION APPLICATIONS

Single PNP-Operational Amplifiers

Single PNP-Operational Amplifiers These operational amplifiers are circuits for universal applications having a PNP-input differential stage and an open collector output. Apart from one resistor, only active components are used. The integrated regulator provides for all parameters a large degree

PNP SILICON POWER TRANSISTOR ARRAY HIGH SPEED SWITCHING USE INDUSTRIAL USE

DESCRIPTION The µPA1453 is PNP silicon epitaxial Power Transistor Array that built in 4 circuits designed for driving solenoid, relay, lamp and so on. FEATURES • Easy mount by 0.1 inch of terminal interval. • High hFE. Low VCE(sat). hFE = 100 to 400 (at IC = –2 A) VCE(sat) = –0.3 V MAX

PNP SILICON POWER TRANSISTOR ARRAY HIGH SPEED SWITCHING USE INDUSTRIAL USE

DESCRIPTION The µPA1453 is PNP silicon epitaxial Power Transistor Array that built in 4 circuits designed for driving solenoid, relay, lamp and so on. FEATURES • Easy mount by 0.1 inch of terminal interval. • High hFE. Low VCE(sat). hFE = 100 to 400 (at IC = –2 A) VCE(sat) = –0.3 V MAX

DUAL PULSE-WIDTH-MODULATION CONTROL CIRCUIT

文件：116.09 Kbytes Page：7 Pages

DUAL PULSE-WIDTH-MODULATION CONTROL CIRCUIT

文件：116.09 Kbytes Page：7 Pages