RF & MICROWAVE TRANSISTORS

DESCRIPTION The MS1402 is a 12.5 V Class C epitaxial silicon NPN planar transistor designed primarily for UHF communications. This device utilizes improved metallization to achieve infinite VSWR at rated operating conditions. KEY FEATURES ◾ 450 - 512 MHz ◾ 12.5 Volts ◾ Efficiency 55 ◾ POUT =

RF AND MICROWAVE TRANSISTORS UHF MOBILE APPLICATIONS

DESCRIPTION: The MS1402 is a 12.5 V Class C epitaxial silicon NPN planar transistor designed primarily for UHF communications. This device utilizes improved metallization to achieve infinite VSWR at rated operating conditions. Features • 450 - 512 MHz • 12.5 Volts • Efficiency 55 • POUT = 2.

封装/外壳：M122 包装：散装 描述：RF TRANS NPN 16V 512MHZ M122 分立半导体产品 晶体管 - 双极（BJT）- 射频

Trans RF BJT NPN 16V 0.75A 4-Pin Case M-122

RF/Microwave Si BJT Power Devices & Pallets

NPN general purpose transistor

DESCRIPTION NPN transistor in a plastic TO-92; SOT54 package. PNP complement: ED1602. FEATURES • Low current (max. 200 mA) • Low voltage (max. 20 V) • High gain. APPLICATIONS • General purpose switching and amplification.

NPN general purpose transistor

DESCRIPTION NPN transistor in a plastic TO-92; SOT54 package. PNP complement: ED1602. FEATURES • Low current (max. 200 mA) • Low voltage (max. 20 V) • High gain. APPLICATIONS • General purpose switching and amplification.

NPN general purpose transistor

DESCRIPTION NPN transistor in a plastic TO-92; SOT54 package. PNP complement: ED1602. FEATURES • Low current (max. 200 mA) • Low voltage (max. 20 V) • High gain. APPLICATIONS • General purpose switching and amplification.

Integtrated Circuit Electronic Channel Selector

Description The NTE1402 is an integrated circuit in a 24–Lead DIP type package designed for electronic tuner by the preset volume method. Features • Simplifies Selection Circuit up to 16 Channels • Incorporating Clock Oscillator, Input Control, UP–DOWN Counter and Decoder Circuit

Integrated Photosensors

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