RF & MICROWAVE TRANSISTORS

DESCRIPTION The MS1402 is a 12.5 V Class C epitaxial silicon NPN planar transistor designed primarily for UHF communications. This device utilizes improved metallization to achieve infinite VSWR at rated operating conditions. KEY FEATURES ◾ 450 - 512 MHz ◾ 12.5 Volts ◾ Efficiency 55 ◾ POUT =

RF AND MICROWAVE TRANSISTORS UHF MOBILE APPLICATIONS

DESCRIPTION: The MS1402 is a 12.5 V Class C epitaxial silicon NPN planar transistor designed primarily for UHF communications. This device utilizes improved metallization to achieve infinite VSWR at rated operating conditions. Features • 450 - 512 MHz • 12.5 Volts • Efficiency 55 • POUT = 2.

封装/外壳：M122 包装：散装 描述：RF TRANS NPN 16V 512MHZ M122 分立半导体产品 晶体管 - 双极（BJT）- 射频

Trans RF BJT NPN 16V 0.75A 4-Pin Case M-122

RF/Microwave Si BJT Power Devices & Pallets

200 V - 1,000 V Single Phase Bridge 12.0 A Forward Current 70 ns - 3000 ns Recovery Time

12.0 A Forward Current 70 ns - 3000 ns Recovery Time

200 V - 1,000 V Single Phase Bridge 12.0 A Forward Current 70 ns - 3000 ns Recovery Time

12.0 A Forward Current 70 ns - 3000 ns Recovery Time

Serial 12-Bit, 2.2Msps Sampling ADC with Shutdown

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Original Strain Relief Bushings

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- 12 GAUGE ALUMINUM BODY PAINTED (RAL 7032)

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