型号 功能描述 生产厂家 企业 LOGO 操作
MRF9060M

945 MHz, 60 W, 26 V Lateral N-Channel Broadband RF Power MOSFETs

ETC

知名厂家

The RF Sub-micron MOSFET Line RF POWER FIELD EFFECT TRANSISTORS N-channel Enhancement-mode Lateral MOSFETs

The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices make them ideal for large–signal, com

MOTOROLA

摩托罗拉

The RF Sub-micron MOSFET Line RF POWER FIELD EFFECT TRANSISTORS N-channel Enhancement-mode Lateral MOSFETs

The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices make them ideal for large–signal, com

MOTOROLA

摩托罗拉

10-Bit 75 MSPS A/D Converter

GENERAL DESCRIPTION The AD9060 A/D converter is a 10-bit monolithic converter capable of word rates of 75 MSPS and above. Innovative architecture using 512 input comparators instead of the traditional 1024 required by other flash converters reduces input capacitance and improves linearity. I

AD

亚德诺

10-Bit 75 MSPS A/D Converter

GENERAL DESCRIPTION The AD9060 A/D converter is a 10-bit monolithic converter capable of word rates of 75 MSPS and above. Innovative architecture using 512 input comparators instead of the traditional 1024 required by other flash converters reduces input capacitance and improves linearity. I

AD

亚德诺

RF POWER TRANSISTORS Ldmos Enhanced Technology

DESCRIPTION The LET9060C is an N-Channel enhancement-mode lateral Field-Effect RF power transistor, designed for high gain broadband, commercial and industrial applications. It operates at 28 V in common source mode at frequencies up to 1.0 GHz. LET9060C boasts the excellent gain, linearity and r

STMICROELECTRONICS

意法半导体

RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package

Description The LET9060 is a common source N-channel, enhancement-mode lateral field-effect RF power MOSFET. It is designed for high gain, broadband, commercial and industrial applications. It operates at 28 V in common source mode at frequencies of up to 1 GHz. LET9060 boasts the excellent gain,

STMICROELECTRONICS

意法半导体

1/2 DUTY, 160-OUTPUT STATIC LCD DRIVER

GENERAL DESCRIPTION The ML9060 consists of a 320-bit shift register, a 320-bit data latch, 160 sets of LCD drivers, and a common signal generator circuit. The LCD display data is input serially to the shift register from the DATA IN pin in synchronization with the CLOCK IN signal, and is stored

OKIOki Electric Cable Co.,Ltd

冲电线日本冲电线株式会社

MRF9060M产品属性

  • 类型

    描述

  • 型号

    MRF9060M

  • 制造商

    MOTOROLA

  • 制造商全称

    Motorola, Inc

  • 功能描述

    The RF Sub-micron MOSFET Line RF POWER FIELD EFFECT TRANSISTORS N-channel Enhancement-mode Lateral MOSFETs

更新时间:2026-3-15 15:16:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
FRESSCAL
23+
TO-59
8510
原装正品代理渠道价格优势
FREESCALE
22+
TO-272-2
2000
原装现货库存.价格优势
Motrola
23+
TO-270
6850
只做原装正品假一赔十为客户做到零风险!!
Motrola
22+
TO-270
20000
公司只有原装 品质保障
Motrola
24+
TO-270
18700
Motrola
23+
TO-270
5628
原厂原装
Motrola
24+
TO-270
2041
进口原装正品优势供应
Motrola
0310+
TO-270
1796
一级代理,专注军工、汽车、医疗、工业、新能源、电力
FREESCALE
2025+
5000
原装进口价格优 请找坤融电子!
MOTROLA
2308+
TO-270
6859
十年专业专注 优势渠道商正品保证公司现货

MRF9060M数据表相关新闻