位置：首页 > IC中文资料第2171页 > MRF7S21170H
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
RF Power Field Effect Transistors (N-Channel Enhancement-Mode Lateral MOSFETs) RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for CDMA and multicarrier amplifier applications. To be used in Class AB and Class C for PCN - PCS/cellular radio and WLL appl | freescaleFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体 |   | ||
RF Power Field Effect Transistors (N-Channel Enhancement-Mode Lateral MOSFETs) RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for CDMA and multicarrier amplifier applications. To be used in Class AB and Class C for PCN - PCS/cellular radio and WLL appl | freescaleFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体 | | ||
RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs 文件：442.39 Kbytes Page：13 Pages | freescaleFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体 | | ||
RF Power Field Effect Transistors 文件：443.39 Kbytes Page：13 Pages | freescaleFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体 | | ||
RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs 文件：802.93 Kbytes Page：17 Pages | freescaleFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体 | | ||
RF Power Field Effect Transistors 文件：452.94 Kbytes Page：17 Pages | freescaleFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体 | | ||
RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs 文件：442.39 Kbytes Page：13 Pages | freescaleFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体 | | ||
RF Power Field Effect Transistors 文件：443.39 Kbytes Page：13 Pages | freescaleFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体 | | ||
RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs 文件：802.93 Kbytes Page：17 Pages | freescaleFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体 | | ||
RF Power Field Effect Transistors 文件：452.94 Kbytes Page：17 Pages | freescaleFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体 | | ||
封装/外壳：SOT-957A 包装：卷带（TR） 描述：FET RF 65V 2.17GHZ NI-880 分立半导体产品 晶体管 - FET，MOSFET - 射频 | ETC 知名厂家 | ETC | | |
RF Power Field Effect Transistors 文件：452.94 Kbytes Page：17 Pages | freescaleFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体 | | ||
封装/外壳：NI-880S 包装：卷带（TR） 描述：FET RF 65V 2.17GHZ NI-88OS 分立半导体产品 晶体管 - FET，MOSFET - 射频 | ETC 知名厂家 | ETC | | |
RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs 文件：802.93 Kbytes Page：17 Pages | freescaleFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体 | | ||
RF Power Field Effect Transistors 文件：443.39 Kbytes Page：13 Pages | freescaleFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体 | | ||
RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs 文件：442.39 Kbytes Page：13 Pages | freescaleFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体 | |
MRF7S21170H产品属性
- 类型
描述
- 型号
MRF7S21170H
- 功能描述
射频MOSFET电源晶体管 HV7 2.1GHZ WCDMA NI880H
- RoHS
否
- 制造商
Freescale Semiconductor
- 配置
Single
- 频率
1800 MHz to 2000 MHz
- 增益
27 dB
- 输出功率
100 W
- 封装/箱体
NI-780-4
- 封装
Tray
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
FREESCALE |
24+ |
NA/ |
50 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
Freescal |
20+ |
高频管 |
29516 |
高频管全新原装主营-可开原型号增税票 |
|||
FREESCALE |
24+ |
QFN |
6000 |
只做原装，欢迎询价，量大价优 |
|||
FSL |
24+ |
SMD |
2789 |
全新原装自家现货!价格优势! |
|||
Freescale |
24+ |
SMD |
5500 |
长期供应原装现货实单可谈 |
|||
FREESCALE |
2450+ |
NI88S |
9485 |
只做原装正品现货或订货假一赔十! |
|||
FREESCALE |
23+ |
NI-880S |
1200 |
全新原装现货,价格优势 |
|||
FREESCALE |
2019+ |
NI-880S |
6992 |
原厂渠道 可含税出货 |
|||
Freescale |
NA |
5500 |
一级代理 原装正品假一罚十价格优势长期供货 |
||||
FRESC |
24+ |
214 |
MRF7S21170H规格书下载地址
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