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MRF65价格
参考价格：￥252.8253
型号：MRF652S 品牌：ASI 备注：这里有MRF65多少钱，2025年最近7天走势，今日出价，今日竞价，MRF65批发/采购报价，MRF65行情走势销售排行榜，MRF65报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
RF POWER TRANSISTOR NPN SILICON The RF Line NPN Silicon RF Power Transistor Designed for 12.5 Volt UHF large–signal amplifier applications in industrial and commercial FM equipment operating to 520 MHz. • Guaranteed 440, 470, 512 MHz 12.5 Volt Characteristics Output Power = 50 Watts Minimum Gain = 5.2 dB @ 440, 470 M | Motorola 摩托罗拉 |   | ||
NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI MRF650 is Designed for Class C, FM Land Mobile Applications up to 470 MHz. FEATURES: • Internal Input Matching Network • PG = 5.0 dB at 45 W/470 MHz • Omnigold™ Metalization System | ASI | | ||
RF POWER TRANSISTORS NPN SILICON The RF Line NPN SILICON RF POWER TRANSISTORS Designedfor 12.5 Vdc UHFlarge–signal, amplifier applications in industrial and commercial FM equipment operating to 512 MHz. • Guaranteed 12.5 Volt, 512 MHz Characteristics Output Power = 5.0 Watts Minimum Gain = 10 dB Efficiency = 65 ( | Motorola 摩托罗拉 | | ||
NPN Silicon RF Power Transistors NPN Silicon RF Power Transistors | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | | ||
The RF MOSFET Line RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET RF Power Field Effect Transistor N--Channel Enhancement--Mode Lateral MOSFET Designed for GSM 900 frequency band, the high gain and broadband performance of this device make it ideal for large--signal, common source amplifier applications in 26 volt base station equipment. • Speci | freescaleFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体 | | ||
RF POWER TRANSISTORS NPN SILICON The RF Line NPN SILICON RF POWER TRANSISTORS Designedfor 12.5 Vdc UHFlarge–signal, amplifier applications in industrial and commercial FM equipment operating to 512 MHz. • Guaranteed 12.5 Volt, 512 MHz Characteristics Output Power = 5.0 Watts Minimum Gain = 10 dB Efficiency = 65 ( | Motorola 摩托罗拉 | | ||
NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI MRF652S is Designed for UHF large signal, amplifier Applications in FM equipment up to 512 MHz. FEATURES: • Common Emitter • PG = 10 dB at 5.0 W/512 MHz • Omnigold™ Metalization System | ASI | | ||
NPN Silicon RF Power Transistors NPN Silicon RF Power Transistors | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | | ||
RF POWER TRANSISTOR NPN SILICON NPN SILICON 10 W, 512 MHz RF POWER TRANSISTOR Designed for 12.5 Volt UHF large–signal amplifier applications in industrial and commercial FM equipment operating to 512 MHz. • Specified 12.5 Volt, 512 MHz Characteristics Output Power = 10 W Gain = 8.0 dB (Typ) Efficiency = 65 (T | Motorola 摩托罗拉 | | ||
RF POWER TRANSISTOR NPN SILICON The RF Line NPN Silicon RF Power Transistor . . . designed for 12.5 Volt UHF large–signal amplifier applications in industrial and commercial FM equipment operating to 512 MHz. • Specified 12.5 Volt, 512 MHz Characteristics Output Power = 15 W Minimum Gain = 7.8 dB Efficiency = 55 | Motorola 摩托罗拉 | | ||
NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI MRF654 is Designed for 12.5 V UHF amplifier applications up to 512 MHZ. FEATURES: • Internal Input Matching Network • PG = 7.8 dB at 15 W/512 MHz • Omnigold™ Metalization System | ASI | | ||
MRF654 MRF654 | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | | ||
NPN Silicon RF power transistor Description: MRF654 is designed for 12.5 Volt UHF large–signal amplifier applications in industrial and commercial FM equipment operating to 512 MHz. Features： Specified 12.5 Volt, 512 MHz Characteristics: Output Power = 15 W, Minimum Gain = 7.8 dB, Efficiency = 55 | ELEFLOW | | ||
RF Power Field Effect Transistor 文件：510.8 Kbytes Page：8 Pages | Motorola 摩托罗拉 | | ||
RF Power Field Effect Transistor 文件：332.8 Kbytes Page：12 Pages | freescaleFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体 | | ||
RF Power Field Effect Transistor 文件：510.8 Kbytes Page：8 Pages | Motorola 摩托罗拉 | | ||
RF Power Field Effect Transistor 文件：332.8 Kbytes Page：12 Pages | freescaleFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体 | | ||
RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET 文件：342.04 Kbytes Page：10 Pages | freescaleFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体 | | ||
RF Power Field Effect Transistor 文件：332.8 Kbytes Page：12 Pages | freescaleFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体 | | ||
RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET 文件：342.04 Kbytes Page：10 Pages | freescaleFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体 | | ||
NPN Silicon RF Power Transistor 文件：83.62 Kbytes Page：1 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | | ||
RF POWER TRANSISTOR NPN SILICON 文件：93.98 Kbytes Page：6 Pages | Motorola 摩托罗拉 | | ||
NPN silicon RF power transistor 文件：70.68 Kbytes Page：1 Pages | ELEFLOW | |
MRF65产品属性
- 类型
描述
- 型号
MRF65
- 功能描述
射频放大器 RF Bipolar Trans
- RoHS
否
- 制造商
Skyworks Solutions, Inc.
- 类型
Low Noise Amplifier
- 工作频率
2.3 GHz to 2.8 GHz
- P1dB
18.5 dBm
- 输出截获点
37.5 dBm
- 功率增益类型
32 dB
- 噪声系数
0.85 dB
- 工作电源电压
5 V
- 电源电流
125 mA
- 测试频率
2.6 GHz
- 最大工作温度
+ 85 C
- 安装风格
SMD/SMT
- 封装/箱体
QFN-16
- 封装
Reel
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Motorola |
24+ |
SMD |
5500 |
长期供应原装现货实单可谈 |
|||
MOTOROLA/摩托罗拉 |
23+ |
TO-59 |
8510 |
原装正品代理渠道价格优势 |
|||
MOTOROLA |
18+ |
TO-59 |
85600 |
保证进口原装可开17%增值税发票 |
|||
MOT |
23+ |
模块 |
3562 |
||||
MOTOROLA/摩托罗拉 |
2450+ |
8850 |
只做原装正品假一赔十为客户做到零风险!! |
||||
MOT |
24+ |
SMD |
5632 |
公司原厂原装现货假一罚十!特价出售!强势库存! |
|||
MOTOROLA |
23+ |
高频管 |
3000 |
原装正品假一罚百!可开增票! |
|||
MOT |
21+ |
12588 |
原装现货价格优势 |
||||
MOT |
24+ |
原装 |
2789 |
全新原装自家现货!价格优势! |
|||
MOTOROLA |
9909 |
4 |
公司优势库存 热卖中! |
MRF65规格书下载地址
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