RF Power Field Effect Transistor

N--Channel Enhancement--Mode Lateral MOSFET

Designed for GSM 900 frequency band, the high gain and broadband performance of this device make it ideal for large--signal, common source amplifier applications in 26 volt base station equipment.

• Specified Performance @ 940 MHz, 26 Volts

Output Power, P1dB — 80 Watts (Typ)

Power Gain @ P1dB — 16 dB (Typ)

Efficiency @ P1dB — 58 (Typ)

• Capable of Handling 5:1 VSWR, @ 26 Vdc, 945 MHz, 50 Watts CW Output Power

• RoHS Compliant

• In Tape and Reel. R3 Suffix = 250 Units per 32 mm, 13 inch Reel.