位置：首页 > IC中文资料第6477页 > MRF5S21150
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
MRF5S21150 | RF POWER FIELD EFFECT TRANSISTORS The RF MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for W–CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN–PCS/ce l lu lar r | Motorola 摩托罗拉 |   | |
RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN - PCS/cellular radio and WLL applications. • Typical 2-Carrier W-CDMA Performance: VDD = 28 Volts, IDQ = 1300 mA, | freescaleFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体 | | ||
RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN - PCS/cellular radio and WLL applications. • Typical 2-Carrier W-CDMA Performance: VDD = 28 Volts, IDQ = 1300 mA, | freescaleFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体 | | ||
RF POWER FIELD EFFECT TRANSISTORS The RF MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for W–CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN–PCS/ce l lu lar r | Motorola 摩托罗拉 | | ||
RF POWER FIELD EFFECT TRANSISTORS The RF MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for W–CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN–PCS/ce l lu lar r | Motorola 摩托罗拉 | | ||
RF POWER FIELD EFFECT TRANSISTORS The RF MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for W–CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN–PCS/ce l lu lar r | Motorola 摩托罗拉 | | ||
封装/外壳：NI-880 包装：卷带（TR） 描述：FET RF 65V 2.17GHZ NI-880 分立半导体产品 晶体管 - FET，MOSFET - 射频 | ETC 知名厂家 | ETC | | |
封装/外壳：NI-880S 包装：卷带（TR） 描述：FET RF 65V 2.17GHZ NI-880S 分立半导体产品 晶体管 - FET，MOSFET - 射频 | ETC 知名厂家 | ETC | |
MRF5S21150产品属性
- 类型
描述
- 型号
MRF5S21150
- 制造商
FREESCALE
- 制造商全称
Freescale Semiconductor, Inc
- 功能描述
RF POWER FIELD EFFECT TRANSISTORS
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
FREESCALE |
24+ |
NA/ |
50 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
MOTOROLA |
03+ |
SMD |
23 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
MOTOROLA |
24+ |
SMD |
7850 |
只做原装正品现货或订货假一赔十! |
|||
MOTOROLA/摩托罗拉 |
2223+ |
SMD |
26800 |
只做原装正品假一赔十为客户做到零风险 |
|||
MOTOROLA/摩托罗拉 |
25+ |
SMD |
880000 |
明嘉莱只做原装正品现货 |
|||
MOTOROLA/摩托罗拉 |
03+ |
SMD |
7 |
原装现货 |
|||
Freescale |
24+ |
SMD |
2789 |
全新原装自家现货!价格优势! |
|||
FREESCALE |
2023+ |
SMD |
8635 |
一级代理优势现货,全新正品直营店 |
|||
MOTOROLA/摩托罗拉 |
23+ |
NI-880 |
10000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
MOTOROLA |
03+16 |
40 |
公司优势库存 热卖中! |
MRF5S21150规格书下载地址
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