2110-2170 MHz, 33 W Avg., 28 V 2 x W-CDMA Lateral N-Channel RF Power MOSFETs

RF POWER FIELD EFFECT TRANSISTORS

The RF MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for W–CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN–PCS/ce l lu lar r

RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN - PCS/cellular radio and WLL applications. • Typical 2-Carrier W-CDMA Performance: VDD = 28 Volts, IDQ = 1300 mA,

RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN - PCS/cellular radio and WLL applications. • Typical 2-Carrier W-CDMA Performance: VDD = 28 Volts, IDQ = 1300 mA,

封装/外壳：NI-880 包装：卷带（TR） 描述：FET RF 65V 2.17GHZ NI-880 分立半导体产品 晶体管 - FET，MOSFET - 射频

封装/外壳：NI-880S 包装：卷带（TR） 描述：FET RF 65V 2.17GHZ NI-880S 分立半导体产品 晶体管 - FET，MOSFET - 射频

RF POWER FIELD EFFECT TRANSISTORS

The RF MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for W–CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN–PCS/ce l lu lar r