RF POWER FIELD EFFECT TRANSISTOR

The RF Sub–Micron MOSFET Line RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for W–CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN–PCS/cell

RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET

RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN-PCS/cellular radio and WLL applications

RF POWER FIELD EFFECT TRANSISTOR

The RF Sub–Micron MOSFET Line RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for W–CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN–PCS/cell

封装/外壳：NI-1230 包装：卷带（TR） 描述：FET RF 65V 2.17GHZ NI-1230 分立半导体产品 晶体管 - FET，MOSFET - 射频

封装/外壳：NI-1230 包装：卷带（TR） 描述：FET RF 65V 2.17GHZ NI-1230 分立半导体产品 晶体管 - FET，MOSFET - 射频

2110-2170 MHz, 52 W Avg., 2 x W-CDMA, 28 V Lateral N-Channel Broadband RF Power MOSFET

2170 MHz, 52 W Avg., 2 x W-CDMA, 28 V Lateral N-Channel RF Power MOSFET