The RF Sub–Micron MOSFET Line

RF Power Field Effect Transistor

N-Channel Enhancement-Mode Lateral MOSFET

Designed for W–CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN–PCS/cellular radio and WLL applications.

• Typical 2–carrier W–CDMA Performance for VDD = 28 Volts,

IDQ = 2 x 1100 mA, f1 = 2135 MHz, f2 = 2145 MHz,

Channel Bandwidth = 3.84 MHz, Adjacent Channels Measured over

3.84 MHz BW @ f1 – 5 MHz and f2 + 5 MHz. Distortion Products

Measured over a 3.84 MHz BW @ f1 – 10 MHz and f2 + 10 MHz,

Each Carrier Peak/Avg. = 8.5 dB @ 0.01 Probability on CCDF.

Output Power — 52 Watts Avg.

Power Gain — 13 dB

Efficiency — 24

IM3 — –36 dBc

ACPR — –39 dBc

• Internally Matched, Controlled Q, for Ease of Use

• High Gain, High Efficiency and High Linearity

• Integrated ESD Protection

• Designed for Maximum Gain and Insertion Phase Flatness

• Capable of Handling 5:1 VSWR, @ 28 Vdc, f = 2140 MHz, 180 Watts CW Output Power

• Excellent Thermal Stability

• Characterized with Series Equivalent Large–Signal Impedance Parameters

• In Tape and Reel. R6 Suffix = 150 Units per 56 mm, 13 inch Reel.