The RF TMOS® Line

Power Field Effect Transistor

N–Channel Enhancement Mode

Designed for wideband large–signal amplifier and oscillator applications to 500 MHz.

• Guaranteed 28 Volt, 500 MHz Performance

Output Power = 2.0 Watts

Minimum Gain = 16 dB (Min)

Efficiency = 55 (Typ)

• Facilitates Manual Gain Control, ALC and Modulation Techniques

• 100 Tested for Load Mismatch at All Phase Angles with 30:1 VSWR

• Excellent Thermal Stability, Ideally Suited for Class A Operation