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MMBT5551L价格
参考价格：￥0.1036
型号：MMBT5551LT1G 品牌：ONSemi 备注：这里有MMBT5551L多少钱，2026年最近7天走势，今日出价，今日竞价，MMBT5551L批发/采购报价，MMBT5551L行情走势销售排行榜，MMBT5551L报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
MMBT5551L | High Voltage Transistors High Voltage Transistors NPN Silicon Features • S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant | ONSEMI 安森美半导体 |   | |
MMBT5551L | 高电压 NPN 双极晶体管 | ONSEMI 安森美半导体 | | |
HIGH VOLTAGE SWITCHING TRANSISTOR ■ FEATURES * High Collector-Emitter Voltage: VCEO=160V * High current gain | UTC 友顺 | | ||
HIGH VOLTAGE SWITCHING TRANSISTOR ■ FEATURES * High Collector-Emitter Voltage: VCEO=160V * High current gain | UTC 友顺 | | ||
HIGH VOLTAGE SWITCHING TRANSISTOR ■ FEATURES * High Collector-Emitter Voltage: VCEO=160V * High current gain | UTC 友顺 | | ||
HIGH VOLTAGE SWITCHING TRANSISTOR ■ FEATURES * High Collector-Emitter Voltage: VCEO=160V * High current gain | UTC 友顺 | | ||
HIGH VOLTAGE SWITCHING TRANSISTOR ■ FEATURES * High Collector-Emitter Voltage: VCEO=160V * High current gain | UTC 友顺 | | ||
HIGH VOLTAGE SWITCHING TRANSISTOR ■ FEATURES * High Collector-Emitter Voltage: VCEO=160V * High current gain | UTC 友顺 | | ||
HIGH VOLTAGE SWITCHING TRANSISTOR ■ FEATURES * High Collector-Emitter Voltage: VCEO=160V * High current gain | UTC 友顺 | | ||
HIGH VOLTAGE SWITCHING TRANSISTOR ■ FEATURES * High Collector-Emitter Voltage: VCEO=160V * High current gain | UTC 友顺 | | ||
HIGH VOLTAGE SWITCHING TRANSISTOR ■ FEATURES * High Collector-Emitter Voltage: VCEO=160V * High current gain | UTC 友顺 | | ||
SOT-23 Plastic-Encapsulate Transistors TRANSISTOR (NPN) FEATURES Power dissipation PCM: 0.3 W (Tamb=25℃) Collector current ICM: 0.6 A Collector-base voltage V(BR)CBO: 180 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ | AVICTEK | | ||
High Voltage Transistors High Voltage Transistors NPN Silicon | Motorola 摩托罗拉 | | ||
High Voltage Transistors(NPN Silicon) High Voltage Transistors NPN Silicon Features • Pb−Free Packages are Available | ONSEMI 安森美半导体 | | ||
High Voltage Transistors(NPN Silicon) High Voltage Transistors NPN Silicon | LRC 乐山无线电 | | ||
NPN EPITAXIAL PLANAR TRANSISTOR Description The MMBT5551LT1 is designed for general purpose applications requiring high Breakdown Voltages. | TGS | | ||
NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR ● Collector Dissipation:Pc-225mW(Ta=25°) ● Collector-Emiller Voltage: VCEO=160V | WINNERJOIN 永而佳 | | ||
High Voltage Transistors High Voltage Transistors NPN Silicon Features • S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant | ONSEMI 安森美半导体 | | ||
High Voltage Transistors High Voltage Transistors NPN Silicon Features • S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant | ONSEMI 安森美半导体 | | ||
HIGH VOLTAGE SWITCHING TRANSISTOR ■ FEATURES * High Collector-Emitter Voltage: VCEO=160V * High current gain | UTC 友顺 | | ||
High Voltage Transistors 文件：97.56 Kbytes Page：6 Pages | ONSEMI 安森美半导体 | | ||
SOT-23 Plastic-Encapsulate Transistors | AVICTEK | | ||
贴片晶体管 | DGNJDZ 南晶电子 | | ||
NPN EPITAXIAL SILICON TRANSISTOR 文件：153.2 Kbytes Page：2 Pages | WINNERJOIN 永而佳 | | ||
封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS NPN 160V 0.6A SOT23-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 | ONSEMI 安森美半导体 | | ||
High Voltage Transistors 文件：97.56 Kbytes Page：6 Pages | ONSEMI 安森美半导体 | | ||
High Voltage Transistors NPN Silicon 文件：127.52 Kbytes Page：6 Pages | ONSEMI 安森美半导体 | | ||
High Voltage Transistors 文件：97.56 Kbytes Page：6 Pages | ONSEMI 安森美半导体 | | ||
High Voltage Transistors 文件：97.56 Kbytes Page：6 Pages | ONSEMI 安森美半导体 | | ||
High Voltage Transistors NPN Silicon 文件：127.52 Kbytes Page：6 Pages | ONSEMI 安森美半导体 | | ||
封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS NPN 160V 0.6A SOT23-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 | ONSEMI 安森美半导体 | | ||
HIGH VOLTAGE SWITCHING TRANSISTOR 文件：149.89 Kbytes Page：4 Pages | UTC 友顺 | | ||
Cold Shrink] Rubber Splicing Kits 1. Product Description 3M] 5550 Series Cold Shrink] Rubber Splicing Kits are designed for splicing 5/8 kV shielded and non-shielded, solid dielectric, power cables. Each kit contains all the materials (except connectors) required to construct 3 single-conductor splices on tape shield, wire sh | 3M | | ||
500 Series Intelligent Sensors with Integral Communications 文件：123.14 Kbytes Page：4 Pages | SYSTEMSENSOR | | ||
500 Series Intelligent Sensors with Integral Communications 文件：123.14 Kbytes Page：4 Pages | SYSTEMSENSOR | | ||
500 Series Intelligent Sensors with Integral Communications 文件：123.14 Kbytes Page：4 Pages | SYSTEMSENSOR | | ||
500 Series Intelligent Sensors with Integral Communications 文件：123.14 Kbytes Page：4 Pages | SYSTEMSENSOR | |
MMBT5551L产品属性
- 类型
描述
- 型号
MMBT5551L
- 功能描述
两极晶体管 - BJT 600mA 160V NPN
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
PNP 集电极—基极电压
- VCBO
集电极—发射极最大电压
- VCEO
- 40 V 发射极 - 基极电压
- VEBO
- 6 V
- 增益带宽产品fT
直流集电极/Base Gain hfe
- Min
100 A
- 安装风格
SMD/SMT
- 封装/箱体
PowerFLAT 2 x 2
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ONS |
25+ |
SOT-23 |
1608 |
公司原装现货,热卖中! |
|||
MOTOROAL |
24+ |
SOT-23 |
5000 |
公司存货 |
|||
ON |
2012 |
SOT23 |
208 |
全新原装 正品现货 |
|||
UTC |
17+ |
SOT23 |
6200 |
100%原装正品现货 |
|||
ON |
23+ |
SOT-23 |
30000 |
原装正品,假一罚十 |
|||
CJ/长电 |
2447 |
G123 |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
ORIGINAL |
22+ |
N/A |
20000 |
公司只做原装 品质保障 |
|||
CJ/长电 |
2407+ |
SOT-23 |
30098 |
全新原装!仓库现货,大胆开价! |
|||
ON/安森美 |
23+ |
SOT23 |
2630 |
原厂原装 |
|||
原装 |
20+ |
原装 |
56200 |
原装优势主营型号-可开原型号增税票 |
MMBT5551L规格书下载地址
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MMBT5551L数据表相关新闻
MMBT5551LT1G 是安森美半导体推出的一款 NPN 型硅高压晶体管，采用 SOT-23 封装，符合 AEC-Q101 要求，适用于汽车、工业等领域。
MMBT5551LT1G 是安森美半导体推出的一款 NPN 型硅高压晶体管，采用 SOT-23 封装，符合 AEC-Q101 要求，适用于汽车、工业等领域。
2025-7-22MMBT9013G-SOT23.3R-H-TG_UTC代理商
MMBT9013G-SOT23.3R-H-TG_UTC代理商
2023-2-15MMBT5551G-SOT23.3R-C-TG_UTC代理商
MMBT5551G-SOT23.3R-C-TG_UTC代理商
2023-2-8MMBT6520LT1G
原装代理
2022-6-18MMBT5551-7-F全新原装现货
MMBT5551-7-F集电极—发射极很大电压 VCEO: 160 V 集电极—基极电压 VCBO: 180 V 发射极 - 基极电压 VEBO: 6 V 集电极—射极饱和电压: 200 mV 很大直流电集电极电流: 600 mA Pd-功率耗散: 300 mW 增益带宽产品fT: 300 MHz
2022-3-22MMBT5551 支持原装现货订货型号 SOT-23
MMBT5551 CJ/长电 SOT-23
2021-4-22
DdatasheetPDF页码索引
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