High Voltage Transistors

High Voltage Transistors NPN Silicon

High Voltage Transistors(NPN Silicon)

High Voltage Transistors NPN Silicon Features • Pb−Free Packages are Available

High Voltage Transistors(NPN Silicon)

High Voltage Transistors NPN Silicon

SOT-23 Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURES Power dissipation PCM: 0.3 W (Tamb=25℃) Collector current ICM: 0.6 A Collector-base voltage V(BR)CBO: 180 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

NPN EPITAXIAL PLANAR TRANSISTOR

Description The MMBT5551LT1 is designed for general purpose applications requiring high Breakdown Voltages.

NPN EPITAXIAL SILICON TRANSISTOR

HIGH VOLTAGE TRANSISTOR ● Collector Dissipation:Pc-225mW(Ta=25°) ● Collector-Emiller Voltage: VCEO=160V

High Voltage Transistors

SOT-23 Plastic-Encapsulate Transistors

TRANSISTOR (NPN)FEATURES\n   Power dissipation\n      PCM: 0.3 W (Tamb=25℃)\n   Collector current\n      ICM: 0.6 A\n   Collector-base voltage\n      V(BR)CBO: 180 V\n   Operating and storage junction temperature range\n      TJ, Tstg: -55℃ to +150℃    Power dissipation\n      PCM: 0.3 W (Tamb=25℃)\n   Collector current\n      ICM: 0.6 A\n   Collector-base voltage\n      V(BR)CBO: 180 V\n   Operating and storage junction temperature range\n      TJ, Tstg: -55℃ to +150℃;

贴片晶体管

High Voltage Transistors

文件：97.56 Kbytes Page：6 Pages

High Voltage Transistors

High Voltage Transistors NPN Silicon Features • S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant

NPN EPITAXIAL SILICON TRANSISTOR

文件：153.2 Kbytes Page：2 Pages

High Voltage Transistors NPN Silicon

文件：127.52 Kbytes Page：6 Pages

High Voltage Transistors

文件：97.56 Kbytes Page：6 Pages

封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS NPN 160V 0.6A SOT23-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

NPN Silicon Transistor

NPN Silicon Transistor