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MMBT3906L价格

参考价格：￥0.4013

型号：MMBT3906LP-7 品牌：Diodes 备注：这里有MMBT3906L多少钱，2026年最近7天走势，今日出价，今日竞价，MMBT3906L批发/采购报价，MMBT3906L行情走势销售排行榜，MMBT3906L报价。

型号	功能描述	生产厂家企业	LOGO
MMBT3906L	General Purpose Transistor(NPN Silicon) General Purpose Transistor NPN Silicon Features • Pb−Free Packages are Available	ONSEMI 安森美半导体	ONSEMI
MMBT3906L	General Purpose Transistor General Purpose Transistor PNP Silicon Features • AEC−Q101 Qualified and PPAP Capable • S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant	ONSEMI 安森美半导体	ONSEMI
MMBT3906L	350mW, PNP Small Signal Transistor FEATURES - Epitaxial planar die construction - Surface device type mounting - Moisture sensitivity level 1 - Matte Tin (Sn) lead finish with Nickel (Ni) underplate - Pb free version and RoHS compliant - Packing code with suffix G means green compound (halogen-free)	TSC 台湾半导体	TSC
MMBT3906L	GENERAL PURPOSE TRANSISTOR PNP SILICON DESCRIPTION The MMBT3906L is available in SO T 23 p ackage FEATURES ⚫ Availabl e in SO T 23 p ackage	AITSEMI 创瑞科技	AITSEMI
MMBT3906L	通用三极管	AITSEMI 创瑞科技	AITSEMI
MMBT3906L	SOT-23, -40V, -0.2A, PNP Bipolar Transistor	TSC 台湾半导体	TSC
MMBT3906L	40V,0.1A,General Purpose PNP Bipolar Transistor	GALAXY 银河微电	GALAXY
MMBT3906L-AE3	丝印代码：2AL；GENERAL PURPOSE APPLIATION FEATURES * Collector-Emitter Voltage: VCEO=40V * Collector Dissipation: PD(MAX)=350mW * Complementary to UTC MMBT3904	UTC 友顺	UTC
MMBT3906L-AE3-R	GENERAL PURPOSE APPLIATION FEATURES * Collector-Emitter Voltage: VCEO=40V * Collector Dissipation: PD(MAX)=350mW * Complementary to UTC MMBT3904	UTC 友顺	UTC
MMBT3906L-AL3-R	GENERAL PURPOSE APPLIATION FEATURES * Collector-Emitter Voltage: VCEO=40V * Collector Dissipation: PD(MAX)=350mW * Complementary to UTC MMBT3904	UTC 友顺	UTC
MMBT3906L-AN3	丝印代码：2AL；GENERAL PURPOSE APPLIATION FEATURES * Collector-Emitter Voltage: VCEO=40V * Collector Dissipation: PD(MAX)=350mW * Complementary to UTC MMBT3904	UTC 友顺	UTC
MMBT3906LP	40V PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features • BVCEO > -40V • IC = -200mA High Collector Current • PD = 1000mW Power Dissipation • 0.60mm2 Package Footprint, 13 times Smaller than SOT23 • 0.5mm Height Package Minimizing Off-Board Profile • Complementary NPN Type MMBT3904LP • Totally Lead-Free & Fully RoHS Compliant (Notes	DIODES 美台半导体	DIODES
MMBT3906LP-7	40V PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features • BVCEO > -40V • IC = -200mA High Collector Current • PD = 1000mW Power Dissipation • 0.60mm2 Package Footprint, 13 times Smaller than SOT23 • 0.5mm Height Package Minimizing Off-Board Profile • Complementary NPN Type MMBT3904LP • Totally Lead-Free & Fully RoHS Compliant (Notes	DIODES 美台半导体	DIODES
MMBT3906LP-7B	40V PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features • BVCEO > -40V • IC = -200mA High Collector Current • PD = 1000mW Power Dissipation • 0.60mm2 Package Footprint, 13 times Smaller than SOT23 • 0.5mm Height Package Minimizing Off-Board Profile • Complementary NPN Type MMBT3904LP • Totally Lead-Free & Fully RoHS Compliant (Notes	DIODES 美台半导体	DIODES
MMBT3906LRFG	350mW, PNP Small Signal Transistor FEATURES - Epitaxial planar die construction - Surface device type mounting - Moisture sensitivity level 1 - Matte Tin (Sn) lead finish with Nickel (Ni) underplate - Pb free version and RoHS compliant - Packing code with suffix G means green compound (halogen-free)	TSC 台湾半导体	TSC
MMBT3906LT1	General Purpose Transistor General Purpose Transistor PNP Silicon	MOTOROLA 摩托罗拉	MOTOROLA
MMBT3906LT1	General Purpose Transistors PNP Silicon General Purpose Transistors PNP Silicon ● RoHS product for packing code suffix G, Halogen free product for packing code suffix H ● Weight : 0.008g	WILLAS 威伦电子	WILLAS
MMBT3906LT1	PNP EPITAXIAL PLANAR TRANSISTOR Description The MMBT3906LT1 is designed for general purpose switching and amplifier applications. Absolute Maximum Ratings • Maximum Temperatures Storage Temperature -55~+150°C Junction Temper	TGS	TGS
MMBT3906LT1	SOT-23 TRANSISTOR GENERAL PURPOSE TRANSISTOR • Collector Dissipation:Pc=225mW • Complementary Pair with MMBT3904LT1. • Collector-Emitter Voltage: VCEO=-40V • PNP Epitaxial Silicon Transistor	WINNERJOIN 永而佳	WINNERJOIN
MMBT3906LT1	General Purpose Transistor(PNP Silicon) General Purpose Transistors PNP Silicon	LRC 乐山无线电	LRC
MMBT3906LT1	General Purpose Transistor PNP Silicon General Purpose Transistor PNP Silicon Features •Pb-Free Packages are Available	ONSEMI 安森美半导体	ONSEMI
MMBT3906LT1	General Purpose Transistor(PNP Silicon) General Purpose Transistor PNP Silicon Features •Pb-Free Packages are Available	ONSEMI 安森美半导体	ONSEMI
MMBT3906LT1_07	General Purpose Transistor PNP Silicon General Purpose Transistor PNP Silicon Features •Pb-Free Packages are Available	ONSEMI 安森美半导体	ONSEMI
MMBT3906LT1G	General Purpose Transistor PNP Silicon General Purpose Transistor PNP Silicon Features •Pb-Free Packages are Available	ONSEMI 安森美半导体	ONSEMI
MMBT3906LT1G	General Purpose Transistor General Purpose Transistor PNP Silicon Features •Pb-Free Packages are Available	ONSEMI 安森美半导体	ONSEMI
MMBT3906LT1G	General Purpose Transistor(PNP Silicon) General Purpose Transistor PNP Silicon Features •Pb-Free Packages are Available	ONSEMI 安森美半导体	ONSEMI
MMBT3906LT1G	General Purpose Transistor General Purpose Transistor PNP Silicon Features • AEC−Q101 Qualified and PPAP Capable • S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant	ONSEMI 安森美半导体	ONSEMI
MMBT3906LT1G	General Purpose Transistor General Purpose Transistor PNP Silicon Features • AEC−Q101 Qualified and PPAP Capable • S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant	ONSEMI 安森美半导体	ONSEMI
MMBT3906LT3	General Purpose Transistor PNP Silicon General Purpose Transistor PNP Silicon Features •Pb-Free Packages are Available	ONSEMI 安森美半导体	ONSEMI
MMBT3906LT3	General Purpose Transistor(PNP Silicon) General Purpose Transistor PNP Silicon Features •Pb-Free Packages are Available	ONSEMI 安森美半导体	ONSEMI
MMBT3906LT3G	General Purpose Transistor General Purpose Transistor PNP Silicon Features •Pb-Free Packages are Available	ONSEMI 安森美半导体	ONSEMI
MMBT3906LT3G	General Purpose Transistor General Purpose Transistor PNP Silicon Features • AEC−Q101 Qualified and PPAP Capable • S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant	ONSEMI 安森美半导体	ONSEMI
MMBT3906LT3G	General Purpose Transistor General Purpose Transistor PNP Silicon Features • AEC−Q101 Qualified and PPAP Capable • S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant	ONSEMI 安森美半导体	ONSEMI
MMBT3906LT3G	General Purpose Transistor(PNP Silicon) General Purpose Transistor PNP Silicon Features •Pb-Free Packages are Available	ONSEMI 安森美半导体	ONSEMI
MMBT3906LT3G	General Purpose Transistor PNP Silicon General Purpose Transistor PNP Silicon Features •Pb-Free Packages are Available	ONSEMI 安森美半导体	ONSEMI
MMBT3906L3-TP	封装/外壳：SC-101，SOT-883 包装：散装描述：TRANS PNP 40V 0.2A DFN1006-3 分立半导体产品晶体管 - 双极性晶体管（BJT）- 单个	MCC	MCC
MMBT3906L-AE3	丝印代码：2AL；GENERAL PURPOSE APPLIATION 文件：140.12 Kbytes Page：3 Pages	UTC 友顺	UTC
MMBT3906L-AE3-R	GENERAL PURPOSE APPLIATION 文件：140.12 Kbytes Page：3 Pages	UTC 友顺	UTC
MMBT3906L-AL3-R	GENERAL PURPOSE APPLIATION 文件：140.12 Kbytes Page：3 Pages	UTC 友顺	UTC
MMBT3906L-AN3	丝印代码：2AL；GENERAL PURPOSE APPLIATION 文件：140.12 Kbytes Page：3 Pages	UTC 友顺	UTC
MMBT3906LP	丝印代码：1P；40V Matched Pair PNP Small Signal Transistors 文件：1.95167 Mbytes Page：14 Pages	FUTUREWAFER	FUTUREWAFER
MMBT3906LP_15	40V PNP SMALL SIGNAL TRANSISTOR IN DFN1006 文件：409.31 Kbytes Page：7 Pages	DIODES 美台半导体	DIODES
MMBT3906LP-7	40V PNP SMALL SIGNAL TRANSISTOR IN DFN1006 文件：409.31 Kbytes Page：7 Pages	DIODES 美台半导体	DIODES
MMBT3906LP-7	封装/外壳：3-UFDFN 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带描述：TRANS PNP 40V 0.2A 3DFN 分立半导体产品晶体管 - 双极性晶体管（BJT）- 单个	DIODES 美台半导体	DIODES
MMBT3906LP-7B	40V PNP SMALL SIGNAL TRANSISTOR IN DFN1006 文件：409.31 Kbytes Page：7 Pages	DIODES 美台半导体	DIODES
MMBT3906LT1_15	SOT-23 TRANSISTOR 文件：155.6 Kbytes Page：2 Pages	WINNERJOIN 永而佳	WINNERJOIN
MMBT3906	丝印代码：7B*；PNP switching transistor DESCRIPTION PNP switching transistor in a SOT23 plastic package. NPN complement: MMBT3904. FEATURES • Low current (max. 100 mA) • Low voltage (max. 40 V). APPLICATIONS • Telephony and professional communication equipment.	PHILIPS 飞利浦	PHILIPS
MPS3906	General Purpose Transistor General Purpose Transistor PNP Silicon	MOTOROLA 摩托罗拉	MOTOROLA
MPS3906	PNP switching transistor DESCRIPTION PNP transistor in a plastic TO-92; SOT54 package. NPN complement: MPS3904. FEATURES • Low current (max. 100 mA) • Low voltage (max. 40 V). APPLICATIONS • General purpose switching and amplification.	PHILIPS 飞利浦	PHILIPS
MPS3906	General Purpose Transistor(PNP Silicon) 文件：433.04 Kbytes Page：8 Pages	ONSEMI 安森美半导体	ONSEMI

MMBT3906L产品属性

类型
描述
Pb-free：
Pb
AEC Qualified：
A
Halide free：
H
PPAP Capablee：
P
Status：
Active
Polarity：
PNP
Type：
General Purpose
VCE(sat) Max (V)：
0.4
IC Cont. (A)：
0.2
VCEO Min (V)：
40
VCBO (V)：
40
VEBO (V)：
5
VBE(sat) (V)：
0.95
hFE Min：
100
hFE Max：
300
fT Min (MHz)：
250
PTM Max (W)：
0.225
Package Type：
SOT-23-3

MMBT3906L供应商更多...

更新时间：2026-7-31 23:01:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市高捷芯城科技有限公司	MMBT3906LT1H	onsemi(安森美)	24+	SOT-23-3	3022	原厂订货渠道,支持BOM配单一站式服务	询价
中天科工半导体（深圳）有限公司	MMBT3906LT1	MOTOROLA/摩托罗拉	25+	原装	32000	MOTOROLA/摩托罗拉全新特价MMBT3906LT1即刻询购立享优惠#长期有货	询价
贸泽芯城（深圳）电子科技有限公司	MMB02070B1007JB200	VISHAY/威世	23+	SMD	13000	原厂授权一级代理,专业海外优势订货,价格优势、品种	询价
深圳市安富世纪电子有限公司	MMB02070C1000FB200	VISHAY	23+	SMD	50000	全新原装正品现货,支持订货	询价
深圳市赛美科科技有限公司	MMB02070B1207JB200	VISHAY		SMD	56000	一级代理原装正品假一罚十价格优势长期供货	询价
深圳市华康联电子科技有限公司	MMBT3906LT1G	ON	22+		3000	ON代理分销,价格优势现货假一罚十	询价
深圳市乐峰达科技有限公司	MMB02070B1007JB200	VISHAY	25+	NA	90000	全新原装正品、可开增票、可溯源、一站式配单	询价
深圳市振宏微科技有限公司	MMBT3906LT1G	ON/安森美	25+	NA	7825	原装正品!清仓处理!	询价
深圳市科恒伟业电子有限公司	MMB0207-00B20R15	VISHAY/威世	2450+	SMD	6540	只做原装正品现货或订货!终端客户免费申请样品!	询价
深圳市明嘉莱科技有限公司	MMBT3906LT1G		23+	SMD	618000	明嘉莱只做原装正品现货	询价

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晶体管类型：PNP 电流 - 集电极（Ic）（最大值）：200mA 电压 - 集射极击穿（最大值）：40V 不同?Ib，Ic 时的?Vce 饱和值（最大值）：400mV @ 5mA，50mA 不同?Ic，Vce?时的 DC 电流增益（hFE）（最小值）：100 @ 10mA，1V 功率 - 最大值：300mW 频率 - 跃迁：250MHz 安装类型：表面贴装封装/外壳：TO-236-3，SC-59
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MMBT3906L价格

MMBT3906L产品属性

MMBT3906L供应商更多...

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MMBT3906LT1G

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