General Purpose Transistor(NPN Silicon)

General Purpose Transistor NPN Silicon Features • Pb−Free Packages are Available

General Purpose Transistor

General Purpose Transistor NPN Silicon Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant • S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable

General Purpose Transistor

Features • These Devices are PbïFree, Halogen Free/BFR Free and are RoHS Compliant • S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AECïQ101 Qualified and PPAP Capable

GENERAL PURPOSE TRANSISTOR NPN SILICON

DESCRIPTION The MMBT3904L is available in SO T 23 p ackage FEATURES ⚫ Availabl e in SO T 23 p ackage

200 mA, 40V NPN双极晶体管

The NPN Bipolar Transistor is designed for use in linear and switching applications. The device is housed in the SOT-23 package, which is designed for lower power surface mount applications. • Pb-Free Packages are Available\n• S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable;

300mW, NPN Small Signal Transistor

文件：253.98 Kbytes Page：4 Pages

General Purpose Transistor

Features • These Devices are PbïFree, Halogen Free/BFR Free and are RoHS Compliant • S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AECïQ101 Qualified and PPAP Capable

GENERAL PURPOSE APPLIATION

GENERAL PURPOSE APPLIATION ■ FEATURES * Collector-Emitter Voltage: VCEO=40V * Collector Dissipation: PD(MAX)=350mW * Complementary to UTC MMBT3906

GENERAL PURPOSE APPLIATION

GENERAL PURPOSE APPLIATION ■ FEATURES * Collector-Emitter Voltage: VCEO=40V * Collector Dissipation: PD(MAX)=350mW * Complementary to UTC MMBT3906

40V NPN SURFACE MOUNT TRANSISTOR

Features • BVCEO > 40V • IC = 200mA High Collector Current • PD = 1000mW Power Dissipation • 0.60mm2 Package Footprint, 13 times Smaller than SOT23 • 0.5mm Height Package Minimizing Off-Board Profile • Complementary PNP Type MMBT3906LP • Totally Lead-Free & Fully RoHS Compliant (Notes 1

50V NPN General Purpose Transistor|

Features « High voltage and high current : Vceo = 50V, Ic = 100mA (max) « Excellent hg linearity : hrg (Ic = 0.1 mA)/hgeg (Ic = 2 mA)= 0.95 (typ.) * High hrg - hp = 120 to 400

40V NPN SURFACE MOUNT TRANSISTOR

Features • BVCEO > 40V • IC = 200mA High Collector Current • PD = 1000mW Power Dissipation • 0.60mm2 Package Footprint, 13 times Smaller than SOT23 • 0.5mm Height Package Minimizing Off-Board Profile • Complementary PNP Type MMBT3906LP • Totally Lead-Free & Fully RoHS Compliant (Notes 1

40V NPN SURFACE MOUNT TRANSISTOR

Features • BVCEO > 40V • IC = 200mA High Collector Current • PD = 1000mW Power Dissipation • 0.60mm2 Package Footprint, 13 times Smaller than SOT23 • 0.5mm Height Package Minimizing Off-Board Profile • Complementary PNP Type MMBT3906LP • Totally Lead-Free & Fully RoHS Compliant (Notes 1

General Purpose Transistor

General Purpose Transistor NPN Silicon

NPN SILICON

General Purpose Transistor NPN Silicon

丝印代码：1AM；General Purpose Transistor(NPN Silicon)

General Purpose Transistor NPN Silicon Features • Pb−Free Packages are Available

SOT-23 Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURES Power dissipation PCM: 0.2 W (Tamb=25℃) Collector current ICM: 0.2 A Collector-base voltage V(BR)CBO: 60 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

Transistors (NPN)

FEATURES ■ Power dissipation, PCM:0.2W (Tamb=25℃) ■ Collector current, ICM: 0.2A ■ Collector-base voltage, V(BR)CBO: 60V ■ Operating and storage junction temperature range: TJ, Tstg: -55℃ to +150℃ ■ SOT-23 plastic-encapsulate package Device Marking: AM1

NPN EPITAXIAL PLANAR TRANSISTOR

Description The MMBT3904LT1 is designed for general purpose switching amplifier applications.

SOT-23 TRANSISTOR

GENERAL PURPOSE TRANSISTOR • Complementary Pair with MMBT3906LT1. • Collector Dissipation:Pc=225mW • Collector-Emitter Voltage: VCEO=40V • NPN Epitaxial Silicon Transistor

General Purpose Transistor

General Purpose Transistor • RoHS product for packing code suffix G, Halogen free product for packing code suffix H. • Weight : 0.008g

General Purpose Transistor

General Purpose Transistor NPN Silicon Features • Pb−Free Packages are Available

General Purpose Transistor

General Purpose Transistor NPN Silicon Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant • S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable

General Purpose Transistor

Features • These Devices are PbïFree, Halogen Free/BFR Free and are RoHS Compliant • S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AECïQ101 Qualified and PPAP Capable

General Purpose Transistor

General Purpose Transistor NPN Silicon Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant • S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable

General Purpose Transistor

General Purpose Transistor NPN Silicon Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant • S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable

General Purpose Transistor

General Purpose Transistor NPN Silicon Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant • S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable

General Purpose Transistor

Features • These Devices are PbïFree, Halogen Free/BFR Free and are RoHS Compliant • S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AECïQ101 Qualified and PPAP Capable

General Purpose Transistor

General Purpose Transistor NPN Silicon Features • Pb−Free Packages are Available

封装/外壳：SC-101，SOT-883 包装：散装 描述：TRANS NPN 40V 0.2A DFN1006-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

GENERAL PURPOSE APPLIATION

文件：155.16 Kbytes Page：3 Pages

GENERAL PURPOSE APPLIATION

文件：155.16 Kbytes Page：3 Pages

GENERAL PURPOSE APPLIATION

文件：155.16 Kbytes Page：3 Pages

NPN, 40V, 0.2A, DFN1006-3

丝印代码：1N；40V Matched Pair NPN Small Signal Transistors

文件：1.26493 Mbytes Page：9 Pages

40V NPN SMALL SIGNAL TRANSISTOR IN DFN1006

文件：402.48 Kbytes Page：7 Pages

40V NPN SMALL SIGNAL TRANSISTOR IN DFN1006

文件：402.48 Kbytes Page：7 Pages

封装/外壳：3-UFDFN 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS NPN 40V 0.2A 3DFN 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

40V NPN SMALL SIGNAL TRANSISTOR IN DFN1006

文件：402.48 Kbytes Page：7 Pages

300mW, NPN Small Signal Transistor

文件：253.98 Kbytes Page：4 Pages

丝印代码：1AM；General Purpose Transistor (NPN Silicon)

文件：101.29 Kbytes Page：6 Pages

Transistors

SOT-23 TRANSISTOR

文件：154.69 Kbytes Page：2 Pages

General Purpose Transistor (NPN Silicon)

文件：101.29 Kbytes Page：6 Pages

General Purpose Transistor (NPN Silicon)

文件：101.29 Kbytes Page：6 Pages

General Purpose Transistor (NPN Silicon)

文件：101.29 Kbytes Page：6 Pages

GENERAL PURPOSE AMPLIFIER TRANSISTORS SURFACE MOUNT

General Purpose Transistors NPN and PNP Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SOT−323/SC−70 package which is designed for low power surface mount applications. Features • AEC−Q101 Qualified and PPAP Capable • S Prefix for Aut

General Purpose Transistor

General Purpose Transistor NPN Silicon

NPN switching transistor

DESCRIPTION NPN transistor in a TO-92; SOT54 plastic package. PNP complement: MPS3906. FEATURES • Low current (max. 100 mA) • Low voltage (max. 40 V). APPLICATIONS • General purpose switching and amplification.

NPN switching transistor

DESCRIPTION NPN switching transistor in a SOT223 plastic package. PNP complement: PZT3906. FEATURES • Low current (max. 200 mA) • Low voltage (max. 40 V). APPLICATIONS • High-speed saturated switching.