NPN General Purpose Amplifier

Description This device is designed as a general-purpose amplifier and switch. The useful dynamic range extends to 100 mA as a switch and to 100 MHz as an amplifier.

丝印代码：3904；NPN General-Purpose Amplifier

Description This device is designed as a general-purpose amplifier and switch. The useful dynamic range extends to 100 mA as a switch and to 100 MHz as an amplifier

NPN switching transistor

DESCRIPTION NPN switching transistor in a SOT223 plastic package. PNP complement: PZT3906. FEATURES • Low current (max. 200 mA) • Low voltage (max. 40 V). APPLICATIONS • High-speed saturated switching.

NPN Silicon Switching Transistor

• High DC current gain: 0.1mA to 100mA • Low collector-emitter saturation voltage • Complementary type: PZT 3906 (PNP)

NPN General Purpose Amplifier

Features • Surface Mount SOT-223 Package • Low Voltage and Low Current • General Purpose Amplifier and Switch Application • Halogen free available upon request by adding suffix -HF • Epoxy meets UL 94 V-0 flammability rating • Moisture Sensitivity Level 1 • Marking: ZT3904

S OT-223 Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURES ● Low Voltage and Low Current ● Complementary to PZT3906 ● General Purpose Amplifier and Switch Application

NPN Transistors

■ Features ● Low Voltage and Low Current ● General Purpose Amplifier and Switch Application ● Complementary to PZT3906

NPN General Purpose Amplifier

This device is designed as a general purpose amplifier and switch. The useful dynamic range extends to 100 mA as a switch and to 100 MHz as an amplifier.

General Purpose Transistor

FEATURES Power dissipation PCM : 1 W˄ Tamb=25°C Collector current ICM : 0.2 A Collector-base voltage V(BR)CBO : 6 0 V Operating and storage junction temperature range T Jˈ Tstg: -55℃ to +150℃

NPN Silicon Switching Transistor

● High DC current gain 0.1 mA to 100 mA ● Low collector-emitter saturation voltage ● Complementary type: PZT 3906 (PNP)

SMALL SIGNAL NPN TRANSISTOR

■ SILICON EPITAXIAL PLANAR NPN TRANSISTOR ■ SOT-223 PLASTIC PACKAGE FOR SURFACE MOUNTING CIRCUITS ■ TAPE AND REEL PACKING ■ THE PNP COMPLEMENTARY TYPE IS PZT3906 APPLICATIONS ■ WELL SUITABLE FOR SMD MOTHER BOARD ASSEMBLY ■ SMALL LOAD SWITCH TRANSISTOR WITH HIGH GAIN AND LOW SAT

SOT-223 Plastic-Encapsulate Transistors

FEATURES  Low Voltage and Low Current  Complementary to PZT3906  General Purpose Amplifier and Switch Application

丝印代码：ZT3904；SOT-223 Plastic-Encapsulate Transistors

FEATURES Low Voltage and Low Current Complementary to PZT3906 General Purpose Amplifier and Switch Application

TRANSISTOR (NPN)

FEATURES Power dissipation PCM: 1 W (Tamb=25℃) Collector current ICM: 0.2 A Collector-base voltage V(BR)CBO: 60 V Operating and storage junction temperature range TJ,Tstg: -55℃ to +150℃

Silicon NPN bipolar Transistor

Applications: ● general amplify ● switching application.

丝印代码：ZT3904；NPN Silicon Epitaxial Planar Transistor

Features Low Voltage and Low Current Complementary to TPPZT3906 General Purpose Amplifier and Switch Application

SOT-223 Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURES ● Low Voltage and Low Current ● Complementary to PZT3906 ● General Purpose Amplifier and Switch Application

NPN Bipolar Transistor

The NPN Bipolar Transistor is designed for use in linear and switching applications. The device is housed in the SOT-223 package, which is designed for medium power surface mount applications. • Pb-Free Package is Available\n• S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable;

NPN General Purpose Amplifier

This device is designed as a general purpose amplifier and switch. The useful dynamic range extends to 100 mA as a switch and to 100 MHz as an amplifier. Sourced from Process 23. Acquired by Texas Instruments on September 23rd, 2011.

晶体管

封装/外壳：TO-261-4，TO-261AA 包装：剪切带（CT）带盒（TB） 描述：TRANS NPN 40V 0.2A SOT223-4 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

NPN General Purpose Amplifier

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NPN General-Purpose Amplifier

Description This device is designed as a general-purpose amplifier and switch. The useful dynamic range extends to 100 mA as a switch and to 100 MHz as an amplifier

NPN General-Purpose Amplifier

Description This device is designed as a general-purpose amplifier and switch. The useful dynamic range extends to 100 mA as a switch and to 100 MHz as an amplifier

SOT-223 Plastic-Encapsulate Transistors

FEATURES  Low Voltage and Low Current  Complementary to PZT3906  General Purpose Amplifier and Switch Application

SOT-223 Plastic-Encapsulate Transistors

FEATURES Low Voltage and Low Current Complementary to PZT3906 General Purpose Amplifier and Switch Application

Silicon Planar Medium Power Transistor

DESCRIPTION • General Purpose Amplifier and Switch Application • Low Voltage and Low Current

General Purpose Transistor

General Purpose Transistor NPN Silicon

General Purpose Transistor

General Purpose Transistor NPN Silicon Features • S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant

NPN Transistors

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NPN TRANSISTOR

文件：160.3 Kbytes Page：1 Pages

Silicon Planar Medium Power Transistor

文件：471.14 Kbytes Page：2 Pages

封装/外壳：TO-261-4，TO-261AA 包装：散装 描述：TRANS NPN 40V 0.2A SOT223-4 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

General Purpose Transistor

文件：147.96 Kbytes Page：7 Pages

General Purpose Transistor

文件：147.96 Kbytes Page：7 Pages

General Purpose Transistor

文件：147.96 Kbytes Page：7 Pages

GENERAL PURPOSE AMPLIFIER TRANSISTORS SURFACE MOUNT

General Purpose Transistors NPN and PNP Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SOT−323/SC−70 package which is designed for low power surface mount applications. Features • AEC−Q101 Qualified and PPAP Capable • S Prefix for Aut

General Purpose Transistor(NPN Silicon)

General Purpose Transistor NPN Silicon Features • Pb−Free Packages are Available

NPN switching transistor

DESCRIPTION NPN transistor in a TO-92; SOT54 plastic package. PNP complement: MPS3906. FEATURES • Low current (max. 100 mA) • Low voltage (max. 40 V). APPLICATIONS • General purpose switching and amplification.

General Purpose Transistor

General Purpose Transistor NPN Silicon