MMBT3904LT1价格

参考价格:¥0.1072

型号:MMBT3904LT1 品牌:Infineon 备注:这里有MMBT3904LT1多少钱,2025年最近7天走势,今日出价,今日竞价,MMBT3904LT1批发/采购报价,MMBT3904LT1行情走势销售排行榜,MMBT3904LT1报价。
型号 功能描述 生产厂家&企业 LOGO 操作
MMBT3904LT1

General Purpose Transistor

General Purpose Transistor NPN Silicon

Motorola

摩托罗拉

MMBT3904LT1

General Purpose Transistor(NPN Silicon)

General Purpose Transistor NPN Silicon Features • Pb−Free Packages are Available

ONSEMI

安森美半导体

MMBT3904LT1

SOT-23 Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURES Power dissipation PCM: 0.2 W (Tamb=25℃) Collector current ICM: 0.2 A Collector-base voltage V(BR)CBO: 60 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

AVICTEK

MMBT3904LT1

NPN EPITAXIAL PLANAR TRANSISTOR

Description The MMBT3904LT1 is designed for general purpose switching amplifier applications.

TGS

MMBT3904LT1

NPN SILICON

General Purpose Transistor NPN Silicon

LRC

乐山无线电

MMBT3904LT1

Transistors (NPN)

FEATURES ■ Power dissipation, PCM:0.2W (Tamb=25℃) ■ Collector current, ICM: 0.2A ■ Collector-base voltage, V(BR)CBO: 60V ■ Operating and storage junction temperature range: TJ, Tstg: -55℃ to +150℃ ■ SOT-23 plastic-encapsulate package Device Marking: AM1

SSC

Silicon Standard Corp.

MMBT3904LT1

General Purpose Transistor

General Purpose Transistor • RoHS product for packing code suffix G, Halogen free product for packing code suffix H. • Weight : 0.008g

WILLASWILLAS ELECTRONIC CORP

威伦威伦电子股份有限公司

MMBT3904LT1

SOT-23 TRANSISTOR

GENERAL PURPOSE TRANSISTOR • Complementary Pair with MMBT3906LT1. • Collector Dissipation:Pc=225mW • Collector-Emitter Voltage: VCEO=40V • NPN Epitaxial Silicon Transistor

WINNERJOIN

永而佳

MMBT3904LT1

General Purpose Transistor (NPN Silicon)

文件:101.29 Kbytes Page:6 Pages

ONSEMI

安森美半导体

General Purpose Transistor

General Purpose Transistor NPN Silicon Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant • S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable

ONSEMI

安森美半导体

General Purpose Transistor

General Purpose Transistor NPN Silicon Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant • S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable

ONSEMI

安森美半导体

General Purpose Transistor

Features • These Devices are PbïFree, Halogen Free/BFR Free and are RoHS Compliant • S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AECïQ101 Qualified and PPAP Capable

ONSEMI

安森美半导体

General Purpose Transistor

General Purpose Transistor NPN Silicon Features • Pb−Free Packages are Available

ONSEMI

安森美半导体

SOT-23 TRANSISTOR

文件:154.69 Kbytes Page:2 Pages

WINNERJOIN

永而佳

General Purpose Transistor (NPN Silicon)

文件:101.29 Kbytes Page:6 Pages

ONSEMI

安森美半导体

封装/外壳:TO-236-3,SC-59,SOT-23-3 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:TRANS NPN 40V 0.2A SOT23-3 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

ONSEMI

安森美半导体

封装/外壳:TO-236-3,SC-59,SOT-23-3 包装:卷带(TR) 描述:TRANS NPN 40V 0.2A SOT23 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

Infineon

英飞凌

General Purpose Transistor

General Purpose Transistor • Pb−Free Package May be Available. The G−Suffix Denotes a Pb−Free Lead Finish

LRC

乐山无线电

General Purpose Transistor

General Purpose Transistor • Pb−Free Package May be Available. The G−Suffix Denotes a Pb−Free Lead Finish

LRC

乐山无线电

isc Silicon NPN RF Transistor

DESCRIPTION • Low Noise Figure NF = 5 dB(MAX) @VCE=5.0V, f=10Hz to 15.7kHz, IC=100uA, RS=1.0kΩ • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • Designed for use in low noise ,high-gain amplifiers and linear broadband amplifiers

ISC

无锡固电

General Purpose Transistor(NPN Silicon)

General Purpose Transistor NPN Silicon

LRC

乐山无线电

MMBT3904LT1产品属性

  • 类型

    描述

  • 型号

    MMBT3904LT1

  • 功能描述

    两极晶体管 - BJT NPN GENERAL PURPOSE

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    PNP 集电极—基极电压

  • VCBO

    集电极—发射极最大电压

  • VCEO

    - 40 V 发射极 - 基极电压

  • VEBO

    - 6 V

  • 增益带宽产品fT

    直流集电极/Base Gain hfe

  • Min

    100 A

  • 安装风格

    SMD/SMT

  • 封装/箱体

    PowerFLAT 2 x 2

更新时间:2025-8-16 23:01:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
Infineon(英飞凌)
24+
SOT-23
3022
原厂订货渠道,支持BOM配单一站式服务
INFINEON
2016+
SOT-23
3000
只做原装,假一罚十,公司可开17%增值税发票!
ON/安森美
24+
SOT-23
6800000
100%进口原装现货,特价销售中
ON
01+
SOT23
4324
全新原装进口自己库存优势
ON
24+
SMD
20000
一级代理原装现货假一罚十
ON
24+
DIP
20000
全新原厂原装,进口正品现货,正规渠道可含税!!
MOT
1715+
SOP
251156
只做原装正品现货假一赔十!
onsemi
21+
SOT-23-3
9855571
电子元器件一站式配单服务
23+
SMD
618000
明嘉莱只做原装正品现货
LRC
23+
34
专做原装正品,假一罚百!

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