MMBT3904LT1价格

参考价格:¥0.1072

型号:MMBT3904LT1 品牌:Infineon 备注:这里有MMBT3904LT1多少钱,2025年最近7天走势,今日出价,今日竞价,MMBT3904LT1批发/采购报价,MMBT3904LT1行情走势销售排行榜,MMBT3904LT1报价。
型号 功能描述 生产厂家 企业 LOGO 操作
MMBT3904LT1

General Purpose Transistor

General Purpose Transistor NPN Silicon

Motorola

摩托罗拉

MMBT3904LT1

General Purpose Transistor(NPN Silicon)

General Purpose Transistor NPN Silicon Features • Pb−Free Packages are Available

ONSEMI

安森美半导体

MMBT3904LT1

SOT-23 Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURES Power dissipation PCM: 0.2 W (Tamb=25℃) Collector current ICM: 0.2 A Collector-base voltage V(BR)CBO: 60 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

AVICTEK

MMBT3904LT1

NPN EPITAXIAL PLANAR TRANSISTOR

Description The MMBT3904LT1 is designed for general purpose switching amplifier applications.

TGS

MMBT3904LT1

NPN SILICON

General Purpose Transistor NPN Silicon

LRC

乐山无线电

MMBT3904LT1

Transistors (NPN)

FEATURES ■ Power dissipation, PCM:0.2W (Tamb=25℃) ■ Collector current, ICM: 0.2A ■ Collector-base voltage, V(BR)CBO: 60V ■ Operating and storage junction temperature range: TJ, Tstg: -55℃ to +150℃ ■ SOT-23 plastic-encapsulate package Device Marking: AM1

SSC

Silicon Standard Corp.

MMBT3904LT1

General Purpose Transistor

General Purpose Transistor • RoHS product for packing code suffix G, Halogen free product for packing code suffix H. • Weight : 0.008g

WILLAS

威伦电子

MMBT3904LT1

SOT-23 TRANSISTOR

GENERAL PURPOSE TRANSISTOR • Complementary Pair with MMBT3906LT1. • Collector Dissipation:Pc=225mW • Collector-Emitter Voltage: VCEO=40V • NPN Epitaxial Silicon Transistor

WINNERJOIN

永而佳

MMBT3904LT1

General Purpose Transistor (NPN Silicon)

文件:101.29 Kbytes Page:6 Pages

ONSEMI

安森美半导体

MMBT3904LT1

NPN SILICON

LRC

乐山无线电

MMBT3904LT1

贴片晶体管

DGNJDZ

南晶电子

MMBT3904LT1

Switching Transistors

un-semi

友恩半导体

General Purpose Transistor

Features • These Devices are PbïFree, Halogen Free/BFR Free and are RoHS Compliant • S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AECïQ101 Qualified and PPAP Capable

ONSEMI

安森美半导体

General Purpose Transistor

General Purpose Transistor NPN Silicon Features • Pb−Free Packages are Available

ONSEMI

安森美半导体

General Purpose Transistor

General Purpose Transistor NPN Silicon Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant • S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable

ONSEMI

安森美半导体

General Purpose Transistor

General Purpose Transistor NPN Silicon Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant • S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable

ONSEMI

安森美半导体

SOT-23 TRANSISTOR

文件:154.69 Kbytes Page:2 Pages

WINNERJOIN

永而佳

General Purpose Transistor (NPN Silicon)

文件:101.29 Kbytes Page:6 Pages

ONSEMI

安森美半导体

封装/外壳:TO-236-3,SC-59,SOT-23-3 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:TRANS NPN 40V 0.2A SOT23-3 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

ONSEMI

安森美半导体

封装/外壳:TO-236-3,SC-59,SOT-23-3 包装:卷带(TR) 描述:TRANS NPN 40V 0.2A SOT23 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

Infineon

英飞凌

General Purpose Transistor

General Purpose Transistor • Pb−Free Package May be Available. The G−Suffix Denotes a Pb−Free Lead Finish

LRC

乐山无线电

General Purpose Transistor

General Purpose Transistor • Pb−Free Package May be Available. The G−Suffix Denotes a Pb−Free Lead Finish

LRC

乐山无线电

isc Silicon NPN RF Transistor

DESCRIPTION • Low Noise Figure NF = 5 dB(MAX) @VCE=5.0V, f=10Hz to 15.7kHz, IC=100uA, RS=1.0kΩ • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • Designed for use in low noise ,high-gain amplifiers and linear broadband amplifiers

ISC

无锡固电

General Purpose Transistor(NPN Silicon)

General Purpose Transistor NPN Silicon

LRC

乐山无线电

MMBT3904LT1产品属性

  • 类型

    描述

  • 型号

    MMBT3904LT1

  • 功能描述

    两极晶体管 - BJT NPN GENERAL PURPOSE

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    PNP 集电极—基极电压

  • VCBO

    集电极—发射极最大电压

  • VCEO

    - 40 V 发射极 - 基极电压

  • VEBO

    - 6 V

  • 增益带宽产品fT

    直流集电极/Base Gain hfe

  • Min

    100 A

  • 安装风格

    SMD/SMT

  • 封装/箱体

    PowerFLAT 2 x 2

更新时间:2025-11-18 10:44:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
TOSHIBA
SOT-23
185600
一级代理 原装正品假一罚十价格优势长期供货
ON
2022+
7600
原厂原装,假一罚十
CJ
23+
NA
6800
原装正品,力挺实单
ON
24+
SOT23
20000
全新原厂原装,进口正品现货,正规渠道可含税!!
ON
2024+
SOT23
50000
原装正品
onsemi
原厂封装
9800
原装进口公司现货假一赔百
INFINEON/英飞凌
2223+
26800
只做原装正品假一赔十为客户做到零风险
LRC
2025+
SOT-23
3685
全新原厂原装产品、公司现货销售
ON
2021+
60000
原装现货,欢迎询价
ON/安森美
24+
SOT-23
10000
只做原装欢迎含税交易,假一赔十,放心购买

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