MMBT3904晶体管资料

  • MMBT3904别名:MMBT3904三极管、MMBT3904晶体管、MMBT3904晶体三极管

  • MMBT3904生产厂家:美国摩托罗拉半导体公司

  • MMBT3904制作材料

  • MMBT3904性质:射频/高频放大 (HF)_通用 (G)

  • MMBT3904封装形式

  • MMBT3904极限工作电压

  • MMBT3904最大电流允许值:0.2A

  • MMBT3904最大工作频率:<1MHZ或未知

  • MMBT3904引脚数

  • MMBT3904最大耗散功率

  • MMBT3904放大倍数

  • MMBT3904图片代号:NO

  • MMBT3904vtest:0

  • MMBT3904htest:999900

  • MMBT3904atest:.2

  • MMBT3904wtest:0

  • MMBT3904代换 MMBT3904用什么型号代替:BCW72,3DG120C,

MMBT3904价格

参考价格:¥0.0754

型号:MMBT3904 品牌:Fairchild 备注:这里有MMBT3904多少钱,2024年最近7天走势,今日出价,今日竞价,MMBT3904批发/采购报价,MMBT3904行情走势销售排行榜,MMBT3904报价。
型号 功能描述 生产厂家&企业 LOGO 操作
MMBT3904

GENERALPURPOSETRANSISTORNPNSILICON

GeneralPurposeTransistor NPNSilicon

ZOWIEZOWIE

智威智威科技股份有限公司

ZOWIE
MMBT3904

NPNSMALLSIGNALSURFACEMOUNTTRANSISTOR

Features •EpitaxialPlanarDieConstruction •ComplementaryPNPTypeAvailable (MMBT3906) •IdealforMediumPowerAmplificationand Switching

TRSYS

Transys Electronics

TRSYS
MMBT3904

NPNGeneralPurposeAmplifier

Description Thisdeviceisdesignedasageneral-purposeamplifierandswitch.Theusefuldynamicrangeextendsto100mAasaswitchandto100MHzasanamplifier.

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild
MMBT3904

NPNSMALLSIGNALSURFACEMOUNTTRANSISTOR

40VNPNSMALLSIGNALTRANSISTORINSOT23 Features •EpitaxialPlanarDieConstruction •ComplementaryPNPTypeAvailable(MMBT3906) •IdealforMediumPowerAmplificationandSwitching •TotallyLead-Free&FullyRoHSCompliant(Notes1&2) •HalogenandAntimonyFree.“Green”Devic

DIODESDiodes Incorporated

达尔科技

DIODES
MMBT3904

SmallSignalTransistors(NPN)

FEATURES ◆NPNSiliconEpitaxialPlanarTransistor forswitchingandamplifierapplications. ◆Ascomplementarytype,thePNP transistorMMBT3906isrecommended. ◆ThistransistorisalsoavailableintheTO-92 casewiththetypedesignation2N3904.

GE

GE Industrial Company

GE
MMBT3904

GENERALPURPOSEAMPLIFIERTRANSISTORSSURFACEMOUNT

GeneralPurposeTransistors NPNandPNPSilicon Thesetransistorsaredesignedforgeneralpurposeamplifierapplications.TheyarehousedintheSOT−323/SC−70packagewhichisdesignedforlowpowersurfacemountapplications. Features •AEC−Q101QualifiedandPPAPCapable •SPrefixforAut

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
MMBT3904

NPNGeneralPurposeAmplifier

Features •Halogenfreeavailableuponrequestbyaddingsuffix-HF •Capableof350mWattsofPowerDissipationand200mAIc. •OperatingandStorageJunctionTemperatures:-55°Cto150°C •SurfaceMountSOT-23Package •LeadFreeFinish/RoHSCompliant(PSuffixdesignates RoHSCompliant

MCCMicro Commercial Components

美微科美微科半导体公司

MCC
MMBT3904

NPNSiliconSwitchingTransistor

NPNSiliconSwitchingTransistors •HighDCcurrentgain:0.1mAto100mA •Lowcollector-emittersaturationvoltage •ForSMBT3904S: Two(galvanic)internalisolatedtransistors withgoodmatchinginonepackage •Complementarytypes:SMBT3906...MMBT3906 •SMBT3904S:Fororientat

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon
MMBT3904

GeneralPurposeTransistorNPNSilicon

GeneralPurposeTransistor NPNSilicon P/bLead(Pb)-Free

WEITRONWEITRON

威堂電子科技

WEITRON
MMBT3904

GENERALPURPOSEAPPLIATION

GENERALPURPOSEAPPLIATION ■FEATURES *Collector-EmitterVoltage:VCEO=40V *CollectorDissipation:PD(MAX)=350mW *ComplementarytoUTCMMBT3906

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC
MMBT3904

SMDGeneralPurposeTransistor(NPN)

SMDGeneralPurposeTransistor(NPN) Features •NPNSiliconEpitaxialPlanarTransistorfor SwitchingandAmplifierApplications •RoHScompliance

TAITRON

TAITRON

TAITRON
MMBT3904

NPNSWITCHINGTRANSISTOR

FEATURES ●Epitaxialplanardieconstruction. ●ComplementaryPNPtypeavailable (MMBT3906). ●CollectorCurrentCapabilityICM=200mA. ●Collector-emitterVoltageVCEO=40V. APPLICATIONS ●Generalswitchingandamplification

BILINGalaxy Semi-Conductor Holdings Limited

世纪微电子常州银河世纪微电子股份有限公司

BILIN
MMBT3904

NPNGENERALPURPOSESWITCHINGTRANSISTOR

FEATURES •NPNepitaxialsilicon,planardesign •Collector-emittervoltageVCE=40V •CollectorcurrentIC=200mA •Pbfreeproductareavailable:99SnabovecanmeetRohsenvironmentsubstancedirectiverequest

PANJITPANJIT International Inc.

强茂強茂股份有限公司

PANJIT
MMBT3904

0.2WattsNPNPlastic-EncapsulateTransistors

FEATURES -Epitaxialplanardieconstruction -Surfacedevicetypemounting -Moisturesensitivitylevel1 -MatteTin(Sn)leadfinishwithNickel(Ni)underplate -PbfreeversionandRoHScompliant -PackingcodewithsuffixGmeansgreencompound(halogen-free)

TSCTaiwan Semiconductor Company, Ltd

台半 台湾半导体股份有限公司

TSC
MMBT3904

NPNSiliconGeneralPurposeTransistor

NPNSiliconGeneralPurposeTransistor forswitchingandamplifierapplications. AscomplementarytypesthePNPtransistors MMBT3906isrecommended.

SEMTECH_ELECSEMTECH ELECTRONICS LTD.

先之科半导体先之科半导体科技(东莞)有限公司

SEMTECH_ELEC
MMBT3904

NPNGeneralPurposeAmplifier

Thisdeviceisdesignedasageneralpurposeamplifierandswitch.Theusefuldynamicrangeextendsto100mAasaswitchandto100MHzasanamplifier.

PFSShenzhen Ping Sheng Electronics Co., Ltd.

平盛电子深圳市平盛电子有限公司

PFS
MMBT3904

200mA,40VNPNPlasticEncapsulatedTransistor

FEATURES ◆CollectorcurrentcapabilityIC=200mA ◆Collector-emittervoltageVCEO=40V. APPLICATION ◆Generalswitchingandamplification.

SECOS

SeCoS Halbleitertechnologie GmbH

SECOS
MMBT3904

NPNswitchingtransistor

DESCRIPTION NPNswitchingtransistorinaSOT23plasticpackage. PNPcomplement:MMBT3906. FEATURES •Lowcurrent(max.100mA) •Lowvoltage(max.40V). APPLICATIONS •Telephonyandprofessionalcommunicationequipment.

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

Philips
MMBT3904

SMALLSIGNALNPNTRANSISTOR

SMALLSIGNALNPNTRANSISTOR ■SILICONEPITAXIALPLANARNPN TRANSISTOR ■MINIATURESOT-23PLASTICPACKAGE FORSURFACEMOUNTINGCIRCUITS ■TAPEANDREELPACKING ■THEPNPCOMPLEMENTARYTYPEIS MMBT3906 APPLICATIONS ■WELLSUITABLEFORPORTABLE EQUIPMENT ■SMALLLOADSWITCH

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS
MMBT3904

SOT-23Plastic-EncapsulateTransistors

TRANSISTOR(NPN) FEATURES ●AscomplementarytypethePNPtransistorMMBT3906isrecommended ●Epitaxialplanardieconstruction

DAYADaya Electric Group Co., Ltd.

Daya Electric Group Co., Ltd.

DAYA
MMBT3904

NPNSILICON

GeneralPurposeTransistor NPNSilicon

LRCLeshan Radio Co., Ltd

乐山无线电乐山无线电股份有限公司

LRC
MMBT3904

NPNswitchingtransistor

DESCRIPTION NPNswitchingtransistorinaSOT23plasticpackage. PNPcomplement:MMBT3906. FEATURES •CollectorcurrentcapabilityIC=200mA •Collector-emittervoltageVCEO=40V. APPLICATIONS •Generalswitchingandamplification.

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

nxp
MMBT3904

SurfaceMountSi-Epi-PlanarSwitchingTransistors

SurfaceMountSi-Epi-PlanarSwitchingTransistors •Powerdissipation250mW •PlasticcaseSOT-23 •Weightapprox.0.01g •PlasticmaterialhasULclassification94V-0 •Standardpackagingtapedandreeled

DiotecDIOTEC

德欧泰克

Diotec
MMBT3904

TXRX_982_R1EvaluationBoard

SY88973/SY88982/MIC3001-BasedSFPModule GeneralDescription ThisevaluationboardisanimplementationoftheSFPmoduleinadifferentformfactorwithonboardfaultsindicators(LEDs)andaDB-25connectorforserialcommunication.ThedesignusesMicrelsMIC3001controller,SY88982(pincom

MicrelMicrel Semiconductor

麦瑞半导体麦克雷尔|麦瑞半导体

Micrel
MMBT3904

Forswitchingandamplifierapplications

NPNSiliconGeneralPurposeTransistors Forswitchingandamplifierapplications

KINGTRONICSKingtronics International Company

金力金力国际公司

KINGTRONICS
MMBT3904

NPNSiliconGeneralPurposeTransistor

NPNSiliconGeneralPurposeTransistor forswitchingandamplifierapplications.

DGNJDZNanjing International Group Co

南晶电子东莞市南晶电子有限公司

DGNJDZ
MMBT3904

Plastic-EncapsulateTransistors

FEATURES AscomplementarytypethePNPtransistorMMBT3906isrecommended Epitaxialplanardieconstruction

HOTTECHGuangdong Hottech Co. Ltd.

合科泰广东合科泰实业有限公司

HOTTECH
MMBT3904

200mWNPNBipolarTransistors

Feature *PowerDissipationPcm=200mW(Ta=25C) *CollectorCurrentIcm=0.2A *Collector-baseVoltageVbr(cbo)=60V *OperatingandStorageJunctionTemperatureRangeTj.Tstg:-55C~+150C *Marking1AM

FCI

Amphenol ICC

FCI
MMBT3904

SOT-23Plastic-EncapsulateTransistors

TRANSISTOR(NPN) FEATURES ●ComplementarytoMMBT3906

JIANGSU

Jiangsu Changjiang Electronics Technology Co., Ltd

JIANGSU
MMBT3904

Plastic-EncapsulateTransistors

SOT-23Plastic-EncapsulateTransistors Applications: Forgeneralamplificationandswitching,itiscomplementarytoMMBT3906.

SHENZHENSLSSHENZHEN SLS TECHNOLOGY CO.,LTD.

赛尔斯深圳市赛尔斯科技有限公司

SHENZHENSLS
MMBT3904

GENERALPURPOSEAPPLICATION

FEATURES *Collector-EmitterVoltage:VCEO=40V *CollectorDissipation:PD(MAX)=350mW *ComplementarytoMMBT3906

ARTSCHIP

ARTSCHIP ELECTRONICS CO.,LMITED.

ARTSCHIP
MMBT3904

NPNTransistor

Features ●ForSwitchingandAFAmpliferApplications. ●SiliconEpitaxialChip.

PJSEMIDongguan Pingjingsemi Technology Co., Ltd,

平晶半导体东莞市平晶半导体科技有限公司

PJSEMI
MMBT3904

Plastic-EncapsulateTransistors

TRANSISTOR(NPN) FEATURES ●ComplementarytoMMBT3906

MAKOSEMI

MAKO SEMICONDUCTOR CO.,LIMITED

MAKOSEMI
MMBT3904

NPNTransistors

Features ●ComplementarytoMMBT3906 ●Marking:1AM

YFWDIODEDONGGUAN YOU FENG WEI ELECTRONICS CO., LTD

佑风微电子广东佑风微电子有限公司

YFWDIODE
MMBT3904

SOT-23Plastic-EncapsulateTransistors

TRANSISTOR(NPN) Features ●ComplementarytoMMBT3906

HDSEMIJiangsu High diode Semiconductor Co., Ltd

苏海德半导体苏海德半导体有限公司

HDSEMI
MMBT3904

NPNGENERALPURPOSESWITCHINGTRANSISTOR

Voltage-40VoltsPowerDissipation-300mWatt FEATURES ●EpitaxialPlanarDieConstruction ●ComplementaryPNPTypeAvailable (MMBT3906) ●IdealforMediumPowerAmplificationand Switching

DIOTECH

Diotech Company.

DIOTECH
MMBT3904

NPNGeneralPurposeAmplifier

Features •CollectorcurrentcapabilityIC=-200mA •Collector-emittervoltageVCEO=-40V •RoHScompliantpackage Application •Generalswitchingandamplification

BWTECHBruckewell Technology LTD

布吕克韦尔技术布吕克韦尔技术有限公司

BWTECH
MMBT3904

SiliconNPNtransistorinaSOT-23PlasticPackage

Descriptions SiliconNPNtransistorinaSOT-23PlasticPackage. Features Lowcurrent,Lowvoltage。 Applications Generalpurposeamplifierandswitching.

FOSHANFoshan Blue Rocket Electronics Co.,Ltd.

蓝箭电子佛山市蓝箭电子股份有限公司

FOSHAN
MMBT3904

Amplifiers&Switches

Amplifiers&Switches Bipolar:GeneralPurpose

AMMSEMI

American Microsemiconductor

AMMSEMI
MMBT3904

NPNSwitchingTransistor

■FEATURES NPNSwitchingTransistor

GSMEGuilin Strong Micro-Electronics Co., Ltd.

Guilin Strong Micro-Electronics Co., Ltd.

GSME
MMBT3904

iscSiliconNPNTransistor

DESCRIPTION •LowVoltageUse •UltraSuperMiniMoldPackage •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS •Telephonyandprofessionalcommunicationequipment.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
MMBT3904

NPNSilicon

Features:Forswitchingandamplifierapplications.AscomplementarytypesthePNPtransistorsMMBT3906isrecommended.

SKTECHNOLGYSHIKE Electronics

時科广东時科微实业有限公司

SKTECHNOLGY
MMBT3904

TRANSISTOR(NPN)

FEATURES ●Ascomplementarytype,thePNPtransistorMMBT3906isRecommended ●Epitaxialplanardieconstruction

KOOCHIN

SHENZHEN KOO CHIN ELECTRONICS CO., LTD.

KOOCHIN
MMBT3904

NPNGeneralPurposeAmplifier

Features ●EpoxymeetsUL-94V-0flammabilityrating ●Halogenfreeavailableuponrequestbyaddingsuffix”HF” ●MoisureSensitivityLevel1 ●Marking:1AM

SAMYANGSAMYANG ELECTRONICS CO.,LTD.

SAMYANGSAMYANG ELECTRONICS CO.,LTD.

SAMYANG
MMBT3904

Low-powerpyroelectricinfraredsensorsignalprocessingchip

ProductOverview HM4002isalow-powerpyroelectricinfraredsensorsignalprocessingchip,whichcanbematchedwithinfraredsensorunitSimpleloadsensingON/OFFanddelaytimingfunctioncontrol;atthesametime,thechipbuilt-inhigh-precisionstableLDO2.6VoutputcanprovideRedpower

HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd

华之美半导体深圳市华之美半导体有限公司

HMSEMI
MMBT3904

40VMatchedPairNPNSmallSignalTransistors

文件:1.26493 Mbytes Page:9 Pages

FUTUREWAFER

FutureWafer Tech Co.,Ltd

FUTUREWAFER
MMBT3904

TRANSISTOR(NPN)

文件:609.11 Kbytes Page:4 Pages

BYTESONICBytesonic Electronics Co., Ltd.

百特森深圳市百特森电子有限公司

BYTESONIC
MMBT3904

NPNSMALLSIGNALSURFACEMOUNTTRANSISTOR

文件:208.47 Kbytes Page:3 Pages

YIXINShenzhen Yixinwei Technology Co., Ltd.

壹芯微深圳市壹芯微科技有限公司

YIXIN
MMBT3904

NPNPlastic-EncapsulateTransistors

文件:575.62 Kbytes Page:5 Pages

JINGHENG

Jinan Jing Heng Electronics Co., Ltd.

JINGHENG
MMBT3904

封装/外壳:TO-236-3,SC-59,SOT-23-3 包装:剪切带(CT)带盒(TB) 描述:TRANS NPN 40V 0.2A SOT23-3 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS
MMBT3904

40VNPNSMALLSIGNALTRANSISTOR

文件:405.23 Kbytes Page:7 Pages

DIODESDiodes Incorporated

达尔科技

DIODES
MMBT3904

300mW,NPNSmallSignalTransistor

文件:221.84 Kbytes Page:4 Pages

TSCTaiwan Semiconductor Company, Ltd

台半 台湾半导体股份有限公司

TSC
MMBT3904

SMDGeneralPurposeNPNTransistors

文件:144.87 Kbytes Page:2 Pages

DiotecDIOTEC

德欧泰克

Diotec
MMBT3904

GENERALPURPOSEAPPLIATION

文件:155.16 Kbytes Page:3 Pages

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC
MMBT3904

封装/外壳:TO-236-3,SC-59,SOT-23-3 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:TRANS NPN 40V 0.2A SOT23-3 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
MMBT3904

NPNTransistors

文件:1.19223 Mbytes Page:2 Pages

KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD

科信电子广东科信实业有限公司

KEXIN
MMBT3904

NPNSWITCHINGTRANSISTOR

文件:1.55577 Mbytes Page:3 Pages

LUGUANGShenzhen Luguang Electronic Technology Co., Ltd

鲁光电子深圳市鲁光电子科技有限公司

LUGUANG
MMBT3904

NPNGeneralPurposeAmplifier

文件:561.27 Kbytes Page:4 Pages

MCCMicro Commercial Components

美微科美微科半导体公司

MCC
MMBT3904

NPNSiliconSwitchingTransistors

文件:867.93 Kbytes Page:11 Pages

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon
MMBT3904

NPNSWITCHINGTRANSISTOR

文件:198.51 Kbytes Page:4 Pages

BILINGalaxy Semi-Conductor Holdings Limited

世纪微电子常州银河世纪微电子股份有限公司

BILIN

MMBT3904产品属性

  • 类型

    描述

  • 型号

    MMBT3904

  • 功能描述

    两极晶体管 - BJT SOT-23 NPN GEN PUR

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    PNP 集电极—基极电压

  • VCBO

    集电极—发射极最大电压

  • VCEO

    - 40 V 发射极 - 基极电压

  • VEBO

    - 6 V

  • 增益带宽产品fT

    直流集电极/Base Gain hfe

  • Min

    100 A

  • 安装风格

    SMD/SMT

  • 封装/箱体

    PowerFLAT 2 x 2

更新时间:2024-3-29 11:30:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ON
16+
SOT323
3000
原装正品现货假一罚十
ON/安森美
23+
SOT-23-3
20000
热卖优势现货
ON
19+
SOT-23
6000
原装现货,特价供应
CJ原装
20+/21+
SOT-23
28500
有挂就有货假一赔十,公司热卖现货库存
UNISONIC
23+
SOT323
12000
全新原装,优势现货
ON/安森美
21+
SOT-23
6000
原装正品
ON/安森美
22+
SOT523
660000
原装正品
长电
20+
SOT-723
12560
一级代理品牌原装正品
ON
11+
SOT23
50000
深圳现货
长电
2021+
SOT23
5980
只做原装,优势渠道,可订货开票

MMBT3904芯片相关品牌

  • 3M
  • AVX
  • GSI
  • MA-COM
  • MARL
  • MORNSUN
  • PAIRUI
  • PCA
  • PF
  • RENESAS
  • TTELEC
  • XFMRS

MMBT3904数据表相关新闻