GENERAL PURPOSE TRANSISTOR NPN SILICON

General Purpose Transistor NPN Silicon

NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR

Features • Epitaxial Planar Die Construction • Complementary PNP Type Available (MMBT3906) • Ideal for Medium Power Amplification and Switching

NPN General Purpose Amplifier

Description This device is designed as a general-purpose amplifier and switch. The useful dynamic range extends to 100 mA as a switch and to 100 MHz as an amplifier.

NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR

40V NPN SMALL SIGNAL TRANSISTOR IN SOT23 Features • Epitaxial Planar Die Construction • Complementary PNP Type Available (MMBT3906) • Ideal for Medium Power Amplification and Switching • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Devic

Small Signal Transistors (NPN)

FEATURES ◆ NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. ◆ As complementary type, the PNP transistor MMBT3906 is recommended. ◆ This transistor is also available in the TO-92 case with the type designation 2N3904.

GENERAL PURPOSE AMPLIFIER TRANSISTORS SURFACE MOUNT

General Purpose Transistors NPN and PNP Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SOT−323/SC−70 package which is designed for low power surface mount applications. Features • AEC−Q101 Qualified and PPAP Capable • S Prefix for Aut

NPN General Purpose Amplifier

Features • Halogen free available upon request by adding suffix -HF • Capable of 350mWatts of Power Dissipation and 200mA Ic. • Operating and Storage Junction Temperatures: -55°C to 150°C • Surface Mount SOT-23 Package • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant

NPN Silicon Switching Transistor

NPN Silicon Switching Transistors • High DC current gain: 0.1 mA to 100 mA • Low collector-emitter saturation voltage • For SMBT3904S: Two (galvanic) internal isolated transistors with good matching in one package • Complementary types: SMBT3906... MMBT3906 • SMBT3904S: For orientat

General Purpose Transistor NPN Silicon

General Purpose Transistor NPN Silicon P/b Lead(Pb)-Free

GENERAL PURPOSE APPLIATION

GENERAL PURPOSE APPLIATION ■ FEATURES * Collector-Emitter Voltage: VCEO=40V * Collector Dissipation: PD(MAX)=350mW * Complementary to UTC MMBT3906

SMD General Purpose Transistor (NPN)

SMD General Purpose Transistor (NPN) Features • NPN Silicon Epitaxial Planar Transistor for Switching and Amplifier Applications • RoHS compliance

NPN SWITCHING TRANSISTOR

FEATURES ● Epitaxial planar die construction. ● Complementary PNP type available (MMBT3906). ● Collector Current Capability ICM =200mA. ● Collector-emitter Voltage VCEO=40V. APPLICATIONS ● General switching and amplification

NPN GENERAL PURPOSE SWITCHING TRANSISTOR

FEATURES • NPN epitaxial silicon, planar design • Collector-emitter voltage VCE = 40V • Collector current IC = 200mA • Pb free product are available : 99 Sn above can meet Rohs environment substance directive request

0.2 Watts NPN Plastic-Encapsulate Transistors

FEATURES - Epitaxial planar die construction - Surface device type mounting - Moisture sensitivity level 1 - Matte Tin (Sn) lead finish with Nickel (Ni) underplate - Pb free version and RoHS compliant - Packing code with suffix G means green compound (halogen-free)

NPN Silicon General Purpose Transistor

NPN Silicon General Purpose Transistor for switching and amplifier applications. As complementary types the PNP transistors MMBT3906 is recommended.

NPN General Purpose Amplifier

This device is designed as a general purpose amplifier and switch. The useful dynamic range extends to 100 mA as a switch and to 100 MHz as an amplifier.

200 mA, 40 V NPN Plastic Encapsulated Transistor

FEATURES ◆ Collector current capability IC=200mA ◆ Collector-emitter voltage VCEO=40V. APPLICATION ◆ General switching and amplification.

SOT-23 Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURES ● As complementary type the PNP transistor MMBT3906 is recommended ● Epitaxial planar die construction

NPN switching transistor

DESCRIPTION NPN switching transistor in a SOT23 plastic package. PNP complement: MMBT3906. FEATURES • Low current (max. 100 mA) • Low voltage (max. 40 V). APPLICATIONS • Telephony and professional communication equipment.

SMALL SIGNAL NPN TRANSISTOR

SMALL SIGNAL NPN TRANSISTOR ■ SILICON EPITAXIAL PLANAR NPN TRANSISTOR ■ MINIATURE SOT-23 PLASTIC PACKAGE FOR SURFACE MOUNTING CIRCUITS ■ TAPE AND REEL PACKING ■ THE PNP COMPLEMENTARY TYPE IS MMBT3906 APPLICATIONS ■ WELL SUITABLE FOR PORTABLE EQUIPMENT ■ SMALL LOAD SWITCH

NPN SILICON

General Purpose Transistor NPN Silicon

Surface Mount Si-Epi-Planar Switching Transistors

Surface Mount Si-Epi-Planar Switching Transistors • Power dissipation 250 mW • Plastic case SOT-23 • Weight approx. 0.01 g • Plastic material has UL classification 94V-0 • Standard packaging taped and reeled

NPN switching transistor

TXRX_982_R1 Evaluation Board

SY88973/SY88982/MIC3001-Based SFP Module General Description This evaluation board is an implementation of the SFP module in a different form factor with on board faults indicators (LEDs) and a DB-25 connector for serial communication. The design uses Micrels MIC3001 controller, SY88982 (pin com

Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURES ● Complementary to MMBT3906

For switching and amplifier applications

NPN Silicon General Purpose Transistors For switching and amplifier applications

NPN Silicon General Purpose Transistor

NPN Silicon General Purpose Transistor for switching and amplifier applications.

Plastic-Encapsulate Transistors

FEATURES As complementary type the PNP transistor MMBT3906 is recommended Epitaxial planar die construction

200mW NPN Bipolar Transistors

Feature * Power Dissipation Pcm= 200 mW (Ta=25C) * Collector Current Icm=0.2A * Collector-base Voltage Vbr (cbo)= 60V * Operating and Storage Junction Temperature Range Tj. Tstg: -55C ~ +150C * Marking 1AM

SOT-23 Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURES ● Complementary to MMBT3906

Plastic-Encapsulate Transistors

SOT-23 Plastic-Encapsulate Transistors Applications: For general amplification and switching, it is complementary to MMBT3906.

GENERAL PURPOSE APPLICATION

FEATURES * Collector-Emitter Voltage: VCEO=40V * Collector Dissipation: PD(MAX)=350mW * Complementary to MMBT3906

NPN Transistor

Features ● For Switching and AF Amplifer Applications. ● Silicon Epitaxial Chip.

NPN Transistors

Features ● Complementary to MMBT3906 ● Marking:1AM

SOT-23 Plastic-Encapsulate Transistors

TRANSISTOR( NPN ) Features ● Complementary to MMBT3906

NPN GENERAL PURPOSE SWITCHING TRANSISTOR

Voltage - 40 Volts Power Dissipation - 300 mWatt FEATURES ● Epitaxial Planar Die Construction ● Complementary PNP Type Available (MMBT3906) ● Ideal for Medium Power Amplification and Switching

NPN General Purpose Amplifier

Features • Collector current capability IC = -200 mA • Collector-emitter voltage VCEO = -40 V • RoHS compliant package Application • General switching and amplification

Silicon NPN transistor in a SOT-23 Plastic Package

Descriptions Silicon NPN transistor in a SOT-23 Plastic Package. Features Low current, Low voltage。 Applications General purpose amplifier and switching.

Amplifiers & Switches

Amplifiers & Switches Bipolar: General Purpose

NPN Switching Transistor

■ FEATURES NPN Switching Transistor

isc Silicon NPN Transistor

DESCRIPTION • Low Voltage Use • Ultra Super Mini Mold Package • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • Telephony and professional communication equipment.

NPN Silicon

Features: For switching and amplifier applications. As complementary types the PNP transistors MMBT3906 is recommended.

TRANSISTOR (NPN)

FEATURES ● As complementary type, the PNP transistor MMBT3906 is Recommended ● Epitaxial planar die construction

NPN General Purpose Amplifier

Features ●Epoxy meets UL-94 V-0 flammability rating ●Halogen free available upon request by adding suffix ”HF” ●Moisure Sensitivity Level 1 ●Marking:1AM

Low-power pyroelectric infrared sensor signal processing chip

Product Overview HM4002 is a low-power pyroelectric infrared sensor signal processing chip, which can be matched with infrared sensor unit Simple load sensing ON/OFF and delay timing function control; at the same time, the chip built-in high-precision stable LDO 2.6V output can provide Red power

Plastic-Encapsulate Transistors

FEATURES Complementary to MMBT3906

TRANSISTOR (PNP)

FEATURES Complementary to MMBT3906

NPN switching transistor

FEATURES • Collector current capability IC = 200 mA • Collector-emitter voltage VCEO = 40 V. APPLICATIONS • General switching and amplification. DESCRIPTION NPN switching transistor in a SOT23 plastic package. PNP complement: MMBT3906.

NPN Transistors

Features Small Package Complementary to MMBT3906T

NPN General-Purpose Amplifier

Description This device is designed as a general-purpose amplifier and switch. The useful dynamic range extends to 100 mA as a switch and to 100 MHz as an amplifier

40V Matched Pair NPN Small Signal Transistors

文件：1.26493 Mbytes Page：9 Pages

TRANSISTOR(NPN)

文件：609.11 Kbytes Page：4 Pages

NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR

文件：208.47 Kbytes Page：3 Pages

NPN Plastic-Encapsulate Transistors

文件：575.62 Kbytes Page：5 Pages

40V NPN SMALL SIGNAL TRANSISTOR

文件：405.23 Kbytes Page：7 Pages

300mW, NPN Small Signal Transistor

文件：221.84 Kbytes Page：4 Pages

封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：剪切带（CT）带盒（TB） 描述：TRANS NPN 40V 0.2A SOT23-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

SMD General Purpose NPN Transistors

文件：144.87 Kbytes Page：2 Pages

GENERAL PURPOSE APPLIATION

文件：155.16 Kbytes Page：3 Pages

MMBT3904: NPN General Purpose Amplifier