GENERALPURPOSETRANSISTORNPNSILICON

GeneralPurposeTransistor NPNSilicon

NPNSMALLSIGNALSURFACEMOUNTTRANSISTOR

Features •EpitaxialPlanarDieConstruction •ComplementaryPNPTypeAvailable (MMBT3906) •IdealforMediumPowerAmplificationand Switching

NPNGeneralPurposeAmplifier

Description Thisdeviceisdesignedasageneral-purposeamplifierandswitch.Theusefuldynamicrangeextendsto100mAasaswitchandto100MHzasanamplifier.

NPNSMALLSIGNALSURFACEMOUNTTRANSISTOR

40VNPNSMALLSIGNALTRANSISTORINSOT23 Features •EpitaxialPlanarDieConstruction •ComplementaryPNPTypeAvailable(MMBT3906) •IdealforMediumPowerAmplificationandSwitching •TotallyLead-Free&FullyRoHSCompliant(Notes1&2) •HalogenandAntimonyFree.“Green”Devic

SmallSignalTransistors(NPN)

FEATURES ◆NPNSiliconEpitaxialPlanarTransistor forswitchingandamplifierapplications. ◆Ascomplementarytype,thePNP transistorMMBT3906isrecommended. ◆ThistransistorisalsoavailableintheTO-92 casewiththetypedesignation2N3904.

GENERALPURPOSEAMPLIFIERTRANSISTORSSURFACEMOUNT

GeneralPurposeTransistors NPNandPNPSilicon Thesetransistorsaredesignedforgeneralpurposeamplifierapplications.TheyarehousedintheSOT−323/SC−70packagewhichisdesignedforlowpowersurfacemountapplications. Features •AEC−Q101QualifiedandPPAPCapable •SPrefixforAut

NPNGeneralPurposeAmplifier

Features •Halogenfreeavailableuponrequestbyaddingsuffix-HF •Capableof350mWattsofPowerDissipationand200mAIc. •OperatingandStorageJunctionTemperatures:-55°Cto150°C •SurfaceMountSOT-23Package •LeadFreeFinish/RoHSCompliant(PSuffixdesignates RoHSCompliant

NPNSiliconSwitchingTransistor

NPNSiliconSwitchingTransistors •HighDCcurrentgain:0.1mAto100mA •Lowcollector-emittersaturationvoltage •ForSMBT3904S: Two(galvanic)internalisolatedtransistors withgoodmatchinginonepackage •Complementarytypes:SMBT3906...MMBT3906 •SMBT3904S:Fororientat

GeneralPurposeTransistorNPNSilicon

GeneralPurposeTransistor NPNSilicon P/bLead(Pb)-Free

GENERALPURPOSEAPPLIATION

GENERALPURPOSEAPPLIATION ■FEATURES *Collector-EmitterVoltage:VCEO=40V *CollectorDissipation:PD(MAX)=350mW *ComplementarytoUTCMMBT3906

SMDGeneralPurposeTransistor(NPN)

SMDGeneralPurposeTransistor(NPN) Features •NPNSiliconEpitaxialPlanarTransistorfor SwitchingandAmplifierApplications •RoHScompliance

NPNSWITCHINGTRANSISTOR

FEATURES ●Epitaxialplanardieconstruction. ●ComplementaryPNPtypeavailable (MMBT3906). ●CollectorCurrentCapabilityICM=200mA. ●Collector-emitterVoltageVCEO=40V. APPLICATIONS ●Generalswitchingandamplification

NPNGENERALPURPOSESWITCHINGTRANSISTOR

FEATURES •NPNepitaxialsilicon,planardesign •Collector-emittervoltageVCE=40V •CollectorcurrentIC=200mA •Pbfreeproductareavailable:99SnabovecanmeetRohsenvironmentsubstancedirectiverequest

0.2WattsNPNPlastic-EncapsulateTransistors

FEATURES -Epitaxialplanardieconstruction -Surfacedevicetypemounting -Moisturesensitivitylevel1 -MatteTin(Sn)leadfinishwithNickel(Ni)underplate -PbfreeversionandRoHScompliant -PackingcodewithsuffixGmeansgreencompound(halogen-free)

NPNSiliconGeneralPurposeTransistor

NPNSiliconGeneralPurposeTransistor forswitchingandamplifierapplications. AscomplementarytypesthePNPtransistors MMBT3906isrecommended.

NPNGeneralPurposeAmplifier

Thisdeviceisdesignedasageneralpurposeamplifierandswitch.Theusefuldynamicrangeextendsto100mAasaswitchandto100MHzasanamplifier.

200mA,40VNPNPlasticEncapsulatedTransistor

FEATURES ◆CollectorcurrentcapabilityIC=200mA ◆Collector-emittervoltageVCEO=40V. APPLICATION ◆Generalswitchingandamplification.

NPNswitchingtransistor

DESCRIPTION NPNswitchingtransistorinaSOT23plasticpackage. PNPcomplement:MMBT3906. FEATURES •Lowcurrent(max.100mA) •Lowvoltage(max.40V). APPLICATIONS •Telephonyandprofessionalcommunicationequipment.

SMALLSIGNALNPNTRANSISTOR

SMALLSIGNALNPNTRANSISTOR ■SILICONEPITAXIALPLANARNPN TRANSISTOR ■MINIATURESOT-23PLASTICPACKAGE FORSURFACEMOUNTINGCIRCUITS ■TAPEANDREELPACKING ■THEPNPCOMPLEMENTARYTYPEIS MMBT3906 APPLICATIONS ■WELLSUITABLEFORPORTABLE EQUIPMENT ■SMALLLOADSWITCH

SOT-23Plastic-EncapsulateTransistors

TRANSISTOR(NPN) FEATURES ●AscomplementarytypethePNPtransistorMMBT3906isrecommended ●Epitaxialplanardieconstruction

NPNSILICON

GeneralPurposeTransistor NPNSilicon

NPNswitchingtransistor

SurfaceMountSi-Epi-PlanarSwitchingTransistors

SurfaceMountSi-Epi-PlanarSwitchingTransistors •Powerdissipation250mW •PlasticcaseSOT-23 •Weightapprox.0.01g •PlasticmaterialhasULclassification94V-0 •Standardpackagingtapedandreeled

TXRX_982_R1EvaluationBoard

SY88973/SY88982/MIC3001-BasedSFPModule GeneralDescription ThisevaluationboardisanimplementationoftheSFPmoduleinadifferentformfactorwithonboardfaultsindicators(LEDs)andaDB-25connectorforserialcommunication.ThedesignusesMicrelsMIC3001controller,SY88982(pincom

Forswitchingandamplifierapplications

NPNSiliconGeneralPurposeTransistors Forswitchingandamplifierapplications

NPNSiliconGeneralPurposeTransistor

NPNSiliconGeneralPurposeTransistor forswitchingandamplifierapplications.

Plastic-EncapsulateTransistors

FEATURES AscomplementarytypethePNPtransistorMMBT3906isrecommended Epitaxialplanardieconstruction

200mWNPNBipolarTransistors

Feature *PowerDissipationPcm=200mW(Ta=25C) *CollectorCurrentIcm=0.2A *Collector-baseVoltageVbr(cbo)=60V *OperatingandStorageJunctionTemperatureRangeTj.Tstg:-55C~+150C *Marking1AM

SOT-23Plastic-EncapsulateTransistors

TRANSISTOR(NPN) FEATURES ●ComplementarytoMMBT3906

Plastic-EncapsulateTransistors

SOT-23Plastic-EncapsulateTransistors Applications: Forgeneralamplificationandswitching,itiscomplementarytoMMBT3906.

GENERALPURPOSEAPPLICATION

FEATURES *Collector-EmitterVoltage:VCEO=40V *CollectorDissipation:PD(MAX)=350mW *ComplementarytoMMBT3906

NPNTransistor

Features ●ForSwitchingandAFAmpliferApplications. ●SiliconEpitaxialChip.

Plastic-EncapsulateTransistors

TRANSISTOR(NPN) FEATURES ●ComplementarytoMMBT3906

NPNTransistors

Features ●ComplementarytoMMBT3906 ●Marking:1AM

SOT-23Plastic-EncapsulateTransistors

TRANSISTOR(NPN) Features ●ComplementarytoMMBT3906

NPNGENERALPURPOSESWITCHINGTRANSISTOR

Voltage-40VoltsPowerDissipation-300mWatt FEATURES ●EpitaxialPlanarDieConstruction ●ComplementaryPNPTypeAvailable (MMBT3906) ●IdealforMediumPowerAmplificationand Switching

NPNGeneralPurposeAmplifier

Features •CollectorcurrentcapabilityIC=-200mA •Collector-emittervoltageVCEO=-40V •RoHScompliantpackage Application •Generalswitchingandamplification

SiliconNPNtransistorinaSOT-23PlasticPackage

Descriptions SiliconNPNtransistorinaSOT-23PlasticPackage. Features Lowcurrent,Lowvoltage。 Applications Generalpurposeamplifierandswitching.

Amplifiers&Switches

Amplifiers&Switches Bipolar:GeneralPurpose

NPNSwitchingTransistor

■FEATURES NPNSwitchingTransistor

iscSiliconNPNTransistor

DESCRIPTION •LowVoltageUse •UltraSuperMiniMoldPackage •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS •Telephonyandprofessionalcommunicationequipment.

NPNSilicon

Features:Forswitchingandamplifierapplications.AscomplementarytypesthePNPtransistorsMMBT3906isrecommended.

TRANSISTOR(NPN)

FEATURES ●Ascomplementarytype,thePNPtransistorMMBT3906isRecommended ●Epitaxialplanardieconstruction

NPNGeneralPurposeAmplifier

Features ●EpoxymeetsUL-94V-0flammabilityrating ●Halogenfreeavailableuponrequestbyaddingsuffix”HF” ●MoisureSensitivityLevel1 ●Marking:1AM

Low-powerpyroelectricinfraredsensorsignalprocessingchip

ProductOverview HM4002isalow-powerpyroelectricinfraredsensorsignalprocessingchip,whichcanbematchedwithinfraredsensorunitSimpleloadsensingON/OFFanddelaytimingfunctioncontrol;atthesametime,thechipbuilt-inhigh-precisionstableLDO2.6VoutputcanprovideRedpower

Plastic-EncapsulateTransistors

FEATURES ComplementarytoMMBT3906

TRANSISTOR(PNP)

FEATURES ComplementarytoMMBT3906

NPNswitchingtransistor

FEATURES •CollectorcurrentcapabilityIC=200mA •Collector-emittervoltageVCEO=40V. APPLICATIONS •Generalswitchingandamplification. DESCRIPTION NPNswitchingtransistorinaSOT23plasticpackage. PNPcomplement:MMBT3906.

NPNTransistors

Features SmallPackage ComplementarytoMMBT3906T

封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS NPN 40V 0.2A SOT23-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

40VMatchedPairNPNSmallSignalTransistors

文件：1.26493 Mbytes Page：9 Pages

NPNSMALLSIGNALSURFACEMOUNTTRANSISTOR

文件：208.47 Kbytes Page：3 Pages

NPNPlastic-EncapsulateTransistors

文件：575.62 Kbytes Page：5 Pages

40VNPNSMALLSIGNALTRANSISTOR

文件：405.23 Kbytes Page：7 Pages

300mW,NPNSmallSignalTransistor

文件：221.84 Kbytes Page：4 Pages

封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：剪切带（CT）带盒（TB） 描述：TRANS NPN 40V 0.2A SOT23-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

TRANSISTOR(NPN)

文件：609.11 Kbytes Page：4 Pages

SMDGeneralPurposeNPNTransistors

文件：144.87 Kbytes Page：2 Pages

GENERALPURPOSEAPPLIATION

文件：155.16 Kbytes Page：3 Pages

NPNTransistors

文件：1.19223 Mbytes Page：2 Pages