额定功率 200mW
集电极电流Ic 200mA
集射极击穿电压Vce 40V
晶体管类型 NPN
VCBO集电极基极电压60 V
VCEO集电极-发射极电压40 V
VEBO发射极基础电压6 V
IC集电极电流200 mA
PC集电极功耗200 mW
从结到环境的RΘJA热阻625℃/ W
Tj结温150℃
贮藏温度-55?+ 150℃
TOPR工作温度0?+ 70℃
集电极基极击穿电压V（BR）CBO IC = 10μA，IE = 0 60 V
集电极-发射极击穿电压V（BR）CEO IC = 1mA，IB = 0 40 V
发射极基极击穿电压V（BR）EBO IE = 10μA，IC = 0 6 V
集电极截止电流ICEX VCE = 30V，VEB（off）= 3V 50 nA
集电极截止电流ICBO VCB = 60V，IE = 0 100 nA
发射极截止电流IEBO VEB = 5V，IC = 0 100 nA
hFE（1）VCE = 1V，IC = 10mA 100300
直流电流增益hFE（2）VCE = 1V，IC = 50mA 60
hFE（3）VCE = 1V，IC = 100mA 30
集电极-发射极饱和电压VCE（sat）IC = 50mA，IB = 5mA 0.3 V
基极-发射极饱和电压VBE（sat）IC = 50mA，IB = 5mA 0.95 V
过渡频率fT VCE = 20V，IC = 10mA，f = 100MHz 300 MHz
延迟时间td
VCC = 3V，VBE（off）=-0.5V IC = 10mA，
IB1 = 1mA
35纳秒
上升时间tr
VCC = 3V，VBE（off）=-0.5V IC = 10mA，
IB1 = 1mA
35纳秒
存储时间ts VCC = 3V，IC = 10mA，IB1 = IB2 = 1mA 200 ns
下降时间tf VCC = 3V，IC = 10mA，IB1 = IB2 = 1mA 50 ns
