MMBF170价格

参考价格:¥0.1615

型号:MMBF170 品牌:Fairchild 备注:这里有MMBF170多少钱,2025年最近7天走势,今日出价,今日竞价,MMBF170批发/采购报价,MMBF170行情走势销售排行榜,MMBF170报价。
型号 功能描述 生产厂家 企业 LOGO 操作
MMBF170

N-Channel Enhancement Mode Field Effect Transistor

General Description These N-Channel enhancement mode field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. They can b

Fairchild

仙童半导体

MMBF170

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Features • Low On-Resistance • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (Note 3) • Qualified to AEC-Q101 Standards for Hi

DIODES

美台半导体

MMBF170

0.5A, 60V N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

DESCRIPTION The UTC MMBF170 is an N-channel enhancement MOSFET using UTC’s advanced technology to provide the customers with perfect RDS(ON), low input capacitance, low gate threshold voltage and high switching speed. FEATURES * RDS(ON)

UTC

友顺

MMBF170

N-Channel Enhancement Mode MOSFET

Features ● Surface-mounted package ● Advanced trench cell design ● Extremely low threshold voltage ● ESD protected ( HBM > 2KV ) Quick reference ● BV ≧ 60 V ● Ptot ≦ 0.83 W ● ID ≦ 0.5 A ● RDS(ON) ≦ 3 Ω @ VGS = 10 V ● RDS(ON) ≦ 4 Ω @ VGS = 4.5 V

SKTECHNOLGYSHIKE Electronics

时科广东时科微实业有限公司

MMBF170

N-Channel Enhancement Mode Field Effect Transistor

文件:517.87 Kbytes Page:13 Pages

Fairchild

仙童半导体

MMBF170

MOS场效应

JSMSEMI

杰盛微

MMBF170

0.5A, 60V N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

UTC

友顺

MMBF170

N-CHANNEL ENHANCEMENT MODE MOSFET

DIODES

美台半导体

0.5A, 60V N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

DESCRIPTION The UTC MMBF170 is an N-channel enhancement MOSFET using UTC’s advanced technology to provide the customers with perfect RDS(ON), low input capacitance, low gate threshold voltage and high switching speed. FEATURES * RDS(ON)

UTC

友顺

Power MOSFET

Power MOSFET 500 mA, 60 V, N−Channel SOT−23 Features • NVBF Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

ONSEMI

安森美半导体

0.5A, 60V N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

DESCRIPTION The UTC MMBF170 is an N-channel enhancement MOSFET using UTC’s advanced technology to provide the customers with perfect RDS(ON), low input capacitance, low gate threshold voltage and high switching speed. FEATURES * RDS(ON)

UTC

友顺

Power MOSFET 500 mA, 60 V

Power MOSFET 500 mA, 60 V N-Channel SOT-23 Features • Pb-Free Packages are Available

ONSEMI

安森美半导体

TMOS FET Transistor

TMOS FET Transistor N–Channel

Motorola

摩托罗拉

Power MOSFET 500 mA, 60 V

Power MOSFET 500 mA, 60 V N-Channel SOT-23 Features • Pb-Free Packages are Available

ONSEMI

安森美半导体

Power MOSFET

Power MOSFET 500 mA, 60 V, N−Channel SOT−23 Features • NVBF Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

ONSEMI

安森美半导体

Power MOSFET 500 mA, 60 V

Power MOSFET 500 mA, 60 V N-Channel SOT-23 Features • Pb-Free Packages are Available

ONSEMI

安森美半导体

Power MOSFET 500 mA, 60 V

Power MOSFET 500 mA, 60 V N-Channel SOT-23 Features • Pb-Free Packages are Available

ONSEMI

安森美半导体

Power MOSFET

Power MOSFET 500 mA, 60 V, N−Channel SOT−23 Features • NVBF Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

ONSEMI

安森美半导体

N-CHANNEL ENHANCEMENT MODE MOSFET

Features • Low On-Resistance • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (Note 3) • Qualified to AEC-Q101 Standards for Hi

DIODES

美台半导体

N-CHANNEL ENHANCEMENT MODE MOSFET

Features • Low On-Resistance • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (Note 3) • Qualified to AEC-Q101 Standards for Hi

DIODES

美台半导体

N-CHANNEL ENHANCEMENT MODE MOSFET

Features • Low On-Resistance • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (Note 3) • Qualified to AEC-Q101 Standards for Hi

DIODES

美台半导体

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

文件:132.84 Kbytes Page:3 Pages

DIODES

美台半导体

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

文件:79.45 Kbytes Page:4 Pages

DIODES

美台半导体

N-CHANNEL ENHANCEMENT MODE MOSFET

文件:200.12 Kbytes Page:5 Pages

DIODES

美台半导体

N-CHANNEL ENHANCEMENT MODE MOSFET

文件:200.12 Kbytes Page:5 Pages

DIODES

美台半导体

N-CHANNEL ENHANCEMENT MODE MOSFET

文件:200.12 Kbytes Page:5 Pages

DIODES

美台半导体

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

文件:132.84 Kbytes Page:3 Pages

DIODES

美台半导体

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

文件:79.45 Kbytes Page:4 Pages

DIODES

美台半导体

Power MOSFET 500 mA, 60 V N-Channel SOT-23

文件:82.76 Kbytes Page:5 Pages

ONSEMI

安森美半导体

Power MOSFET 500 mA, 60 V N-Channel SOT-23

文件:82.76 Kbytes Page:5 Pages

ONSEMI

安森美半导体

Power MOSFET 500 mA, 60 V N-Channel SOT-23

文件:82.76 Kbytes Page:5 Pages

ONSEMI

安森美半导体

N-Channel 60-V (D-S) MOSFET

文件:1.7408 Mbytes Page:8 Pages

VBSEMI

微碧半导体

Power MOSFET 500 mA, 60 V N-Channel SOT-23

文件:82.76 Kbytes Page:5 Pages

ONSEMI

安森美半导体

Power MOSFET 500 mA, 60 V N-Channel SOT-23

文件:82.76 Kbytes Page:5 Pages

ONSEMI

安森美半导体

Surface Mount TRANSZORB Transient Voltage Suppressors

FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • Available in uni-directional and bi-directional • 600 W peak pulse power capability with a 10/1000 μs waveform, repetitive rate (duty cycle): 0.01 • Excellent clamping capability • Very fast r

VishayVishay Siliconix

威世威世科技公司

ROD SEALS

DESCRIPTION The BECA 170 - 179 profiles are double acting composite rod seals composed of a filled PTFE friction ring and pre-tightened rubber O'Ring. They can be mounted in the grooves of the O'Rings. Option of connecting the seal to 1 or 2 back-up rings. APPLICATIONS Machine tools

FRANCEJOINT

Hard Wired 170 Series

文件:124.25 Kbytes Page:1 Pages

HAMMONDHammond Manufacturing Company Limited

哈蒙德哈蒙德制造有限公司

RUGGED and LIGHTWEIGHT ALUMINUM BATTERY HOLDERS

文件:115.71 Kbytes Page:2 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

Custom Power Modules

文件:40.15 Kbytes Page:2 Pages

BITECH

MMBF170产品属性

  • 类型

    描述

  • 型号

    MMBF170

  • 功能描述

    MOSFET N-Ch Enhance

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    N-Channel

  • 汲极/源极击穿电压

    650 V

  • 闸/源击穿电压

    25 V

  • 漏极连续电流

    130 A 电阻汲极/源极

  • RDS(导通)

    0.014 Ohms

  • 配置

    Single

  • 安装风格

    Through Hole

  • 封装/箱体

    Max247

  • 封装

    Tube

更新时间:2025-11-22 22:58:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
FAIRCHILD
2016+
SOT23-3
3000
只做原装,假一罚十,公司可开17%增值税发票!
ON/安森美
23+
SOT-23
100586
全新原厂原装正品现货,可提供技术支持、样品免费!
ON/安森美
24+
SOT-23
98000
原装现货假一罚十
ON/安森美
25+
25000
原厂原包 深圳现货 主打品牌 假一赔百 可开票!
ON
24+
SOT-23
65200
全新原装现货/假一罚百!
NA
23+
NA
26094
10年以上分销经验原装进口正品,做服务型企业
Slkor/萨科微
24+
SOT-23
50000
Slkor/萨科微一级代理,价格优势
FAIRCHILD/仙童
25+
SOT-23
39127
FAIRCHILD/仙童全新特价MMBF170即刻询购立享优惠#长期有货
ON(安森美)
24+
SOT-23(SOT-23-3)
27048
原厂可订货,技术支持,直接渠道。可签保供合同
BYchip/百域芯
21+
SOT23
30000
百域芯原厂出品 品质保证 可开13点增值税

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