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位置：首页 > IC中文资料 > MMBF170

MMBF170价格

参考价格：￥0.1615

型号：MMBF170 品牌：Fairchild 备注：这里有MMBF170多少钱，2026年最近7天走势，今日出价，今日竞价，MMBF170批发/采购报价，MMBF170行情走势销售排行榜，MMBF170报价。
型号 功能描述 生产厂家 企业 LOGO 操作
MMBF170

丝印代码：6Z；N-Channel Enhancement Mode Field Effect Transistor

General Description These N-Channel enhancement mode field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. They can b

FAIRCHILD

仙童半导体

MMBF170

0.5A, 60V N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

DESCRIPTION The UTC MMBF170 is an N-channel enhancement MOSFET using UTC’s advanced technology to provide the customers with perfect RDS(ON), low input capacitance, low gate threshold voltage and high switching speed. FEATURES * RDS(ON)

UTC

友顺

MMBF170

丝印代码：C6Z；N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Features • Low On-Resistance • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (Note 3) • Qualified to AEC-Q101 Standards for Hi

DIODES

美台半导体

MMBF170

N-Channel Enhancement Mode Field Effect Transistor

General Description These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. They can

ONSEMI

安森美半导体

MMBF170

N-Channel Enhancement Mode MOSFET

Features ● Surface-mounted package ● Advanced trench cell design ● Extremely low threshold voltage ● ESD protected ( HBM > 2KV ) Quick reference ● BV ≧ 60 V ● Ptot ≦ 0.83 W ● ID ≦ 0.5 A ● RDS(ON) ≦ 3 Ω @ VGS = 10 V ● RDS(ON) ≦ 4 Ω @ VGS = 4.5 V

SKTECHNOLGYSHIKE Electronics

时科广东时科微实业有限公司

MMBF170

0.5A, 60V N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

The UTC MMBF170 is an N-channel enhancement MOSFETusing UTC’s advanced technology to provide the customers withperfect RDS(ON), low input capacitance, low gate threshold voltageand high switching speed. • RDS(ON)<5mΩ @ VGS=10V,ID=0.2A\n• High Switching Speed\n• Low Input Capacitance(typical 22pF);

UTC

友顺

MMBF170

N-CHANNEL ENHANCEMENT MODE MOSFET

DIODES

美台半导体

MMBF170

MOS场效应

JSMSEMI

杰盛微

MMBF170

丝印代码：6Z；N-Channel Enhancement Mode Field Effect Transistor

文件：517.87 Kbytes Page：13 Pages

FAIRCHILD

仙童半导体

MMBF170G-AE2-R

0.5A, 60V N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

DESCRIPTION The UTC MMBF170 is an N-channel enhancement MOSFET using UTC’s advanced technology to provide the customers with perfect RDS(ON), low input capacitance, low gate threshold voltage and high switching speed. FEATURES * RDS(ON)

UTC

友顺

MMBF170L

Power MOSFET

Power MOSFET 500 mA, 60 V, N−Channel SOT−23 Features • NVBF Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

ONSEMI

安森美半导体

MMBF170L-AE2-R

0.5A, 60V N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

DESCRIPTION The UTC MMBF170 is an N-channel enhancement MOSFET using UTC’s advanced technology to provide the customers with perfect RDS(ON), low input capacitance, low gate threshold voltage and high switching speed. FEATURES * RDS(ON)

UTC

友顺

MMBF170LT1

Power MOSFET 500 mA, 60 V

Power MOSFET 500 mA, 60 V N-Channel SOT-23 Features • Pb-Free Packages are Available

ONSEMI

安森美半导体

MMBF170LT1

TMOS FET Transistor

TMOS FET Transistor N–Channel

MOTOROLA

摩托罗拉

MMBF170LT1G

Power MOSFET 500 mA, 60 V

Power MOSFET 500 mA, 60 V N-Channel SOT-23 Features • Pb-Free Packages are Available

ONSEMI

安森美半导体

MMBF170LT1G

Power MOSFET

Power MOSFET 500 mA, 60 V, N−Channel SOT−23 Features • NVBF Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

ONSEMI

安森美半导体

MMBF170LT3

Power MOSFET 500 mA, 60 V

Power MOSFET 500 mA, 60 V N-Channel SOT-23 Features • Pb-Free Packages are Available

ONSEMI

安森美半导体

MMBF170LT3G

Power MOSFET

Power MOSFET 500 mA, 60 V, N−Channel SOT−23 Features • NVBF Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

ONSEMI

安森美半导体

MMBF170LT3G

Power MOSFET 500 mA, 60 V

Power MOSFET 500 mA, 60 V N-Channel SOT-23 Features • Pb-Free Packages are Available

ONSEMI

安森美半导体

MMBF170Q

N-CHANNEL ENHANCEMENT MODE MOSFET

Features • Low On-Resistance • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (Note 3) • Qualified to AEC-Q101 Standards for Hi

DIODES

美台半导体

MMBF170Q-13-F

N-CHANNEL ENHANCEMENT MODE MOSFET

Features • Low On-Resistance • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (Note 3) • Qualified to AEC-Q101 Standards for Hi

DIODES

美台半导体

MMBF170Q-7-F

N-CHANNEL ENHANCEMENT MODE MOSFET

Features • Low On-Resistance • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (Note 3) • Qualified to AEC-Q101 Standards for Hi

DIODES

美台半导体

MMBF170_08

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

文件：132.84 Kbytes Page：3 Pages

DIODES

美台半导体

MMBF170_1

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

文件：79.45 Kbytes Page：4 Pages

DIODES

美台半导体

MMBF170_15

N-CHANNEL ENHANCEMENT MODE MOSFET

文件：200.12 Kbytes Page：5 Pages

DIODES

美台半导体

MMBF170-13-F

N-CHANNEL ENHANCEMENT MODE MOSFET

文件：200.12 Kbytes Page：5 Pages

DIODES

美台半导体

MMBF170-7-F

N-CHANNEL ENHANCEMENT MODE MOSFET

文件：200.12 Kbytes Page：5 Pages

DIODES

美台半导体

MMBF170-7-F

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

文件：79.45 Kbytes Page：4 Pages

DIODES

美台半导体

MMBF170-7-F

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

文件：132.84 Kbytes Page：3 Pages

DIODES

美台半导体

MMBF170LT1

Power MOSFET 500 mA, 60 V N-Channel SOT-23

文件：82.76 Kbytes Page：5 Pages

ONSEMI

安森美半导体

MMBF170LT1_08

Power MOSFET 500 mA, 60 V N-Channel SOT-23

文件：82.76 Kbytes Page：5 Pages

ONSEMI

安森美半导体

MMBF170LT1G

Power MOSFET 500 mA, 60 V N-Channel SOT-23

文件：82.76 Kbytes Page：5 Pages

ONSEMI

安森美半导体

MMBF170LT1G

N-Channel 60-V (D-S) MOSFET

文件：1.7408 Mbytes Page：8 Pages

VBSEMI

微碧半导体

MMBF170LT3

Power MOSFET 500 mA, 60 V N-Channel SOT-23

文件：82.76 Kbytes Page：5 Pages

ONSEMI

安森美半导体

MMBF170LT3G

Power MOSFET 500 mA, 60 V N-Channel SOT-23

文件：82.76 Kbytes Page：5 Pages

ONSEMI

安森美半导体

BS170

TMOS FET Switching(N-Channel-Enhancement)

TMOS FET Switching N–Channel — Enhancement

MOTOROLA

摩托罗拉

MJE170

POWER TRANSISTORS(3.0A,40-80V,12.5W)

COMPLEMENTARY SILICON PLASTIC POWER TRANSISTORS

MOSPEC

统懋

RD170E

500 mW DHD ZENER DIODE DO-35

DESCRIPTION NEC Type RD2.0E to RD200E Series are planar type zener diode in the popular DO-35 package with DHD (Double Heatsink Diode) construction having allowable power dissipation of 500 mW. To meet various application at customers, Vz (zener voltage) is classified into the tight tolerance und

NEC

瑞萨

RD170EB

500 mW DHD ZENER DIODE DO-35

DESCRIPTION NEC Type RD2.0E to RD200E Series are planar type zener diode in the popular DO-35 package with DHD (Double Heatsink Diode) construction having allowable power dissipation of 500 mW. To meet various application at customers, Vz (zener voltage) is classified into the tight tolerance und

NEC

瑞萨

SA170A

MOSORB ZENER OVERVOLTAGE TRANSIENT SUPPRESSORS

The SA5.0A series is designed to protect voltage sensitive components from high voltage, high energy transients. They have excellent clamping capability, high surge capability, low zener impedance and fast response time. The SA5.0A series is supplied in Motorola’s exclusive, cost-effective, highly

MOTOROLA

摩托罗拉

MMBF170产品属性

  • 类型

    描述

  • Pb-free：

    Pb

  • Halide free：

    H

  • Status：

    Active

  • Channel Polarity：

    N-Channel

  • Configuration：

    Single

  • V(BR)DSS Min (V)：

    60

  • VGS Max (V)：

    ±20

  • VGS(th) Max (V)：

    3

  • ID Max (A)：

    0.5

  • PD Max (W)：

    0.3

  • RDS(on) Max @ VGS = 4.5 V(mΩ)：

    5

  • RDS(on) Max @ VGS = 10 V(mΩ)：

    5

  • Qg Typ @ VGS = 10 V (nC)：

    0.65

  • Ciss Typ (pF)：

    24

  • Package Type：

    SOT-23-3

MMBF170供应商更多...

更新时间：2026-5-20 14:36:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市高捷芯城科技有限公司
MMBF170
ON(安森美)
25+
N/A
18798
原装正品现货,原厂订货,可支持含税原型号开票。
询价
深圳市联世界科技有限公司
MMBF170LT1G
恩XP
24+
SOT-23
17000
只做原装真实库存13714450367
询价
深圳市得捷芯城科技有限公司
MMBF170
ON(安森美)
25+
N/A
18798
原装正品现货,原厂订货,可支持含税原型号开票。
询价
瀚佳科技(深圳)有限公司
MMBF170LT1G
ON
24+
SOT-23
65200
全新原装现货/假一罚百!
询价
中天科工半导体（深圳）有限公司
MMBF170
FAIRCHILD/仙童
25+
SOT-23
39127
FAIRCHILD/仙童全新特价MMBF170即刻询购立享优惠#长期有货
询价
深圳市明嘉莱科技有限公司
MMBF170LT1G
ON Semiconductor Corporation
25+
SMD
918000
明嘉莱只做原装正品现货
询价
深圳市壹芯创科技有限公司
MMBF170LT1G
ON
24+
SOT-23
23000
全新原装现货,量大特价,原厂正规渠道!
询价
深圳市赛尔通科技有限公司
MMBF170LT1G
ON
23+
SOT-23
56000
询价
深圳市芯球通科技有限公司
MMBF170
ON(安森美)
23+
12804
公司只做原装正品,假一赔十
询价
深圳市恒达亿科技有限公司
MMBF170LT1G
ON
25+
SOT-23
6000
全新原装现货、诚信经营!
询价

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