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MMBF170价格
参考价格:¥0.1615
型号:MMBF170 品牌:Fairchild 备注:这里有MMBF170多少钱,2024年最近7天走势,今日出价,今日竞价,MMBF170批发/采购报价,MMBF170行情走势销售排行榜,MMBF170报价。型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
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MMBF170 | N-ChannelEnhancementModeFieldEffectTransistor GeneralDescription TheseN-ChannelenhancementmodefieldeffecttransistorsareproducedusingFairchildsproprietary,highcelldensity,DMOStechnology.Theseproductshavebeendesignedtominimizeon-stateresistancewhileproviderugged,reliable,andfastswitchingperformance.Theycanb | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | ||
MMBF170 | N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR Features •LowOn-Resistance •LowGateThresholdVoltage •LowInputCapacitance •FastSwitchingSpeed •LowInput/OutputLeakage •TotallyLead-Free&FullyRoHSCompliant(Notes1&2) •HalogenandAntimonyFree.“Green”Device(Note3) •QualifiedtoAEC-Q101StandardsforHi | DIODESDiodes Incorporated 达尔科技 | ||
MMBF170 | 0.5A,60VN-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR DESCRIPTION TheUTCMMBF170isanN-channelenhancementMOSFETusingUTC’sadvancedtechnologytoprovidethecustomerswithperfectRDS(ON),lowinputcapacitance,lowgatethresholdvoltageandhighswitchingspeed. FEATURES *RDS(ON) | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 | ||
MMBF170 | N-ChannelEnhancementModeMOSFET Features ●Surface-mountedpackage ●Advancedtrenchcelldesign ●Extremelylowthresholdvoltage ●ESDprotected(HBM>2KV) Quickreference ●BV≧60V ●Ptot≦0.83W ●ID≦0.5A ●RDS(ON)≦3Ω@VGS=10V ●RDS(ON)≦4Ω@VGS=4.5V | SKTECHNOLGYSHIKE Electronics 時科广东時科微实业有限公司 | ||
MMBF170 | N-ChannelEnhancementModeFieldEffectTransistor 文件:517.87 Kbytes Page:13 Pages | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | ||
0.5A,60VN-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR DESCRIPTION TheUTCMMBF170isanN-channelenhancementMOSFETusingUTC’sadvancedtechnologytoprovidethecustomerswithperfectRDS(ON),lowinputcapacitance,lowgatethresholdvoltageandhighswitchingspeed. FEATURES *RDS(ON) | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 | |||
PowerMOSFET PowerMOSFET 500mA,60V,N−ChannelSOT−23 Features •NVBFPrefixforAutomotiveandOtherApplicationsRequiring UniqueSiteandControlChangeRequirements;AEC−Q101 QualifiedandPPAPCapable •TheseDevicesarePb−FreeandareRoHSCompliant | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
0.5A,60VN-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR DESCRIPTION TheUTCMMBF170isanN-channelenhancementMOSFETusingUTC’sadvancedtechnologytoprovidethecustomerswithperfectRDS(ON),lowinputcapacitance,lowgatethresholdvoltageandhighswitchingspeed. FEATURES *RDS(ON) | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 | |||
PowerMOSFET500mA,60V PowerMOSFET500mA,60V N-ChannelSOT-23 Features •Pb-FreePackagesareAvailable | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
TMOSFETTransistor TMOSFETTransistor N–Channel | MotorolaMotorola, Inc 摩托罗拉 | |||
PowerMOSFET500mA,60V PowerMOSFET500mA,60V N-ChannelSOT-23 Features •Pb-FreePackagesareAvailable | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
PowerMOSFET PowerMOSFET 500mA,60V,N−ChannelSOT−23 Features •NVBFPrefixforAutomotiveandOtherApplicationsRequiring UniqueSiteandControlChangeRequirements;AEC−Q101 QualifiedandPPAPCapable •TheseDevicesarePb−FreeandareRoHSCompliant | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
PowerMOSFET500mA,60V PowerMOSFET500mA,60V N-ChannelSOT-23 Features •Pb-FreePackagesareAvailable | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
PowerMOSFET500mA,60V PowerMOSFET500mA,60V N-ChannelSOT-23 Features •Pb-FreePackagesareAvailable | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
PowerMOSFET PowerMOSFET 500mA,60V,N−ChannelSOT−23 Features •NVBFPrefixforAutomotiveandOtherApplicationsRequiring UniqueSiteandControlChangeRequirements;AEC−Q101 QualifiedandPPAPCapable •TheseDevicesarePb−FreeandareRoHSCompliant | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
N-CHANNELENHANCEMENTMODEMOSFET Features •LowOn-Resistance •LowGateThresholdVoltage •LowInputCapacitance •FastSwitchingSpeed •LowInput/OutputLeakage •TotallyLead-Free&FullyRoHSCompliant(Notes1&2) •HalogenandAntimonyFree.“Green”Device(Note3) •QualifiedtoAEC-Q101StandardsforHi | DIODESDiodes Incorporated 达尔科技 | |||
N-CHANNELENHANCEMENTMODEMOSFET Features •LowOn-Resistance •LowGateThresholdVoltage •LowInputCapacitance •FastSwitchingSpeed •LowInput/OutputLeakage •TotallyLead-Free&FullyRoHSCompliant(Notes1&2) •HalogenandAntimonyFree.“Green”Device(Note3) •QualifiedtoAEC-Q101StandardsforHi | DIODESDiodes Incorporated 达尔科技 | |||
N-CHANNELENHANCEMENTMODEMOSFET Features •LowOn-Resistance •LowGateThresholdVoltage •LowInputCapacitance •FastSwitchingSpeed •LowInput/OutputLeakage •TotallyLead-Free&FullyRoHSCompliant(Notes1&2) •HalogenandAntimonyFree.“Green”Device(Note3) •QualifiedtoAEC-Q101StandardsforHi | DIODESDiodes Incorporated 达尔科技 | |||
N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR 文件:132.84 Kbytes Page:3 Pages | DIODESDiodes Incorporated 达尔科技 | |||
N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR 文件:79.45 Kbytes Page:4 Pages | DIODESDiodes Incorporated 达尔科技 | |||
N-CHANNELENHANCEMENTMODEMOSFET 文件:200.12 Kbytes Page:5 Pages | DIODESDiodes Incorporated 达尔科技 | |||
N-CHANNELENHANCEMENTMODEMOSFET 文件:200.12 Kbytes Page:5 Pages | DIODESDiodes Incorporated 达尔科技 | |||
N-CHANNELENHANCEMENTMODEMOSFET 文件:200.12 Kbytes Page:5 Pages | DIODESDiodes Incorporated 达尔科技 | |||
N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR 文件:132.84 Kbytes Page:3 Pages | DIODESDiodes Incorporated 达尔科技 | |||
N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR 文件:79.45 Kbytes Page:4 Pages | DIODESDiodes Incorporated 达尔科技 | |||
PowerMOSFET500mA,60VN-ChannelSOT-23 文件:82.76 Kbytes Page:5 Pages | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
PowerMOSFET500mA,60VN-ChannelSOT-23 文件:82.76 Kbytes Page:5 Pages | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
PowerMOSFET500mA,60VN-ChannelSOT-23 文件:82.76 Kbytes Page:5 Pages | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
N-Channel60-V(D-S)MOSFET 文件:1.7408 Mbytes Page:8 Pages | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体(台湾)有限公司 | |||
PowerMOSFET500mA,60VN-ChannelSOT-23 文件:82.76 Kbytes Page:5 Pages | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
PowerMOSFET500mA,60VN-ChannelSOT-23 文件:82.76 Kbytes Page:5 Pages | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
SurfaceMountTRANSZORBTransientVoltageSuppressors FEATURES •Lowprofilepackage •Idealforautomatedplacement •Glasspassivatedchipjunction •Availableinuni-directionalandbi-directional •600Wpeakpulsepowercapabilitywitha10/1000μswaveform,repetitiverate(dutycycle):0.01 •Excellentclampingcapability •Veryfastr | VishayVishay Siliconix 威世科技 | |||
RUGGEDandLIGHTWEIGHTALUMINUMBATTERYHOLDERS 文件:115.71 Kbytes Page:2 Pages | etc2List of Unclassifed Manufacturers etc2未分类制造商 | |||
HardWired170Series 文件:124.25 Kbytes Page:1 Pages | HAMMOND Hammond Manufacturing Ltd. | |||
CustomPowerModules 文件:40.15 Kbytes Page:2 Pages | BITECH 瑞谷拜特上海瑞谷拜特软件技术有限公司 | |||
HardWired170Series 文件:124.25 Kbytes Page:1 Pages | HAMMOND Hammond Manufacturing Ltd. |
MMBF170产品属性
- 类型
描述
- 型号
MMBF170
- 功能描述
MOSFET N-Ch Enhance
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS(导通)
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
FAIRCHILD/仙童 |
24+ |
SOT23 |
154632 |
明嘉莱只做原装正品现货 |
|||
ON/安森美 |
21+ |
SOT23 |
9850 |
只做原装正品假一赔十!正规渠道订货! |
|||
ON |
23+ |
SOT-23 |
56000 |
||||
DIODES/美台 |
SOT23 |
7906200 |
|||||
DIODES |
23+ |
N/A |
35316 |
正规渠道,免费送样。支持账期,BOM一站式配齐 |
|||
ON |
23+ |
SOT-23 |
6000 |
全新原装现货、诚信经营! |
|||
ON/安森美 |
22+ |
SOT23-6 |
54000 |
只做原装进口 免费送样!! |
|||
ON(安森美) |
23+ |
N/A |
589610 |
新到现货 原厂一手货源 价格秒杀代理! |
|||
DIODES(美台) |
23+ |
SOT-23-3 |
9908 |
支持大陆交货,美金交易。原装现货库存。 |
|||
ON/安森美 |
22++ |
SOT23 |
5209 |
原装正品!诚信经营,实单价优! |
MMBF170规格书下载地址
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2019-2-25
DdatasheetPDF页码索引
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