| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
MMBF170Q | N-CHANNEL ENHANCEMENT MODE MOSFET Features • Low On-Resistance • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (Note 3) • Qualified to AEC-Q101 Standards for Hi | DIODES 美台半导体 | ||
MMBF170Q | 60V N-CHANNEL ENHANCEMENT MODE MOSFET This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching, performance, making it ideal for high efficiency power management applications. Low On-Resistance\nLow Gate Threshold Voltage\nLow Input Capacitance\nFast Switching Speed\nLow Input/Output Leakage; | DIODES 美台半导体 | ||
N-CHANNEL ENHANCEMENT MODE MOSFET Features • Low On-Resistance • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (Note 3) • Qualified to AEC-Q101 Standards for Hi | DIODES 美台半导体 | |||
N-CHANNEL ENHANCEMENT MODE MOSFET Features • Low On-Resistance • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (Note 3) • Qualified to AEC-Q101 Standards for Hi | DIODES 美台半导体 | |||
TMOS FET Switching(N-Channel-Enhancement) TMOS FET Switching N–Channel — Enhancement | MOTOROLA 摩托罗拉 | |||
POWER TRANSISTORS(3.0A,40-80V,12.5W) COMPLEMENTARY SILICON PLASTIC POWER TRANSISTORS | MOSPEC 统懋 | |||
500 mW DHD ZENER DIODE DO-35 DESCRIPTION NEC Type RD2.0E to RD200E Series are planar type zener diode in the popular DO-35 package with DHD (Double Heatsink Diode) construction having allowable power dissipation of 500 mW. To meet various application at customers, Vz (zener voltage) is classified into the tight tolerance und | NEC 瑞萨 | |||
500 mW DHD ZENER DIODE DO-35 DESCRIPTION NEC Type RD2.0E to RD200E Series are planar type zener diode in the popular DO-35 package with DHD (Double Heatsink Diode) construction having allowable power dissipation of 500 mW. To meet various application at customers, Vz (zener voltage) is classified into the tight tolerance und | NEC 瑞萨 | |||
MOSORB ZENER OVERVOLTAGE TRANSIENT SUPPRESSORS The SA5.0A series is designed to protect voltage sensitive components from high voltage, high energy transients. They have excellent clamping capability, high surge capability, low zener impedance and fast response time. The SA5.0A series is supplied in Motorola’s exclusive, cost-effective, highly | MOTOROLA 摩托罗拉 |
MMBF170Q产品属性
- 类型
描述
- Automotive Compliant PPAP:
Yes
- Polarity:
N
- ESD Diodes:
No
- VDS:
60 V
- VGS:
20 ±V
- IDS @ TA = +25°C:
0.5 A
- PD @ TA = +25°C:
0.3 W
- RDS(ON) Max @ VGS (10V):
5000 mΩ
- RDS(ON) Max @ VGS (4.5V):
5300 mΩ
- RDS(ON) Max @ VGS (2.5V):
N/A mΩ
- RDS(ON) Max @ VGS (1.8V):
N/A mΩ
- VGS (th) Max:
3 V
- QG Typ @ VGS = 4.5V (nC):
N/A nC
- QG Typ @ VGS = 10V (nC):
N/A nC
- Packages:
SOT23
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
DIODES/美台 |
23+ |
SOT-23 |
50000 |
只做原装正品 |
|||
DIODES/美台 |
25+ |
NA |
30000 |
房间原装现货特价热卖,有单详谈 |
|||
Diodes(美台) |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
|||
DIODES/美台 |
2450+ |
SOT23 |
9850 |
只做原厂原装正品现货或订货假一赔十! |
|||
DIODES/美台 |
23+ |
SOT23 |
6000 |
原装正品假一罚百!可开增票! |
|||
DIODES |
21+ |
SOT-23 |
12726 |
全新 发货1-2天 |
|||
DIODES/美台 |
2447 |
SOT23 |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
Diodes(美台) |
25+ |
SOT-23-3 |
500000 |
源自原厂成本,高价回收工厂呆滞 |
|||
DIODES/美台 |
22+ |
SOT-23 |
20000 |
只做原装 |
|||
DIODEZTX |
25+ |
SOT-23 |
6843 |
样件支持,可原厂排单订货! |
MMBF170Q规格书下载地址
MMBF170Q参数引脚图相关
- nrf24l01
- nfc芯片
- NFC
- ne555定时器
- ne555
- nand闪存
- n74
- n100
- mxt
- murata
- mt7201
- mt6795
- msm8625q
- msm7227a
- MP4
- MP3
- mos晶体管
- mos管
- MOSFET
- molex连接器
- MMBT918
- MMBT720
- MMBT619
- MMBT593
- MMBT591
- MMBT589
- MMBT56
- MMBT493
- MMBT491
- MMBT42
- MMBT28S
- MMBT200
- MMBT100
- MMBR951
- MMBR941
- MMBR931
- MMBR930
- MMBR920
- MMBR911
- MMBR571
- MMBF4119_Q
- MMBF4119
- MMBF4118_Q
- MMBF4118
- MMBF4117_Q
- MMBF4117
- MMBF4093_Q
- MMBF4093
- MMBF4092_Q
- MMBF4092
- MMBF4091_Q
- MMBF4091
- MMBF2202PT3
- MMBF2202PT1G
- MMBF2202PT1_06
- MMBF2202PT1
- MMBF2201PT1
- MMBF2201NT1G
- MMBF2201NT1_06
- MMBF2201NT1
- MMBF170LT3G
- MMBF170LT3
- MMBF170LT1G
- MMBF170LT1_08
- MMBF170LT1
- MMBF170-7-F-31
- MMBF170-7-F
- MMBF170-7
- MMBF170_Q
- MMBF170_G
- MMBF170_D87Z
- MMBF170_1
- MMBF170_08
- MMBF170
- MMBF1374T1
- MMBF102LT1
- MMBF102
- MMBF0202PLT1
- MMBF0201NLT1G-CUT TAPE
- MMBF0201NLT1G
- MMBD914
- MMBD770
- MMBD717
- MMBD701
- MMBD452
- MMBD355
- MMBD354
- MMBD353
- MMBD352
- MMBD330
- MMBD318
- MMBD301
- MMBD248
- MMBD193
- MMBD101
- MMBA_15
- MMB8G
- MMB6G
MMBF170Q数据表相关新闻
MMB02070C1960FB700
进口代理
2024-9-24MMBD7000LT1G 开关二极管 SOT-23
现货100K 品牌 ON/安森美
2022-7-4MMBD7000 CJ/长电 SOT-23 支持原装长电订货型号,欢迎咨询!
MMBD7000 CJ/长电 SOT-23
2021-5-15MMBF4393LT1G
商品目录 结型场效应晶体管(JFET) 连续漏极电流(Id)(25°C 时) - 漏源电压(Vdss) - 栅源极阈值电压 - 漏源导通电阻 - 类型 N 沟道 最大功率耗散(Ta=25°C) 225mW
2020-11-12MMBFJ112 MOS场效应管 晶体管 十年IC,只做原装
MMBFJ112 十年IC,只做原装
2020-10-20MMBF5484RF放大器SOT-23全新原装现货直拍丝印6B
MMBF5484 RF 放大器 SOT-23 全新原装现货 直拍 丝印6B
2019-2-25
DdatasheetPDF页码索引
- P1
- P2
- P3
- P4
- P5
- P6
- P7
- P8
- P9
- P10
- P11
- P12
- P13
- P14
- P15
- P16
- P17
- P18
- P19
- P20
- P21
- P22
- P23
- P24
- P25
- P26
- P27
- P28
- P29
- P30
- P31
- P32
- P33
- P34
- P35
- P36
- P37
- P38
- P39
- P40
- P41
- P42
- P43
- P44
- P45
- P46
- P47
- P48
- P49
- P50
- P51
- P52
- P53
- P54
- P55
- P56
- P57
- P58
- P59
- P60
- P61
- P62
- P63
- P64
- P65
- P66
- P67
- P68
- P69
- P70
- P71
- P72
- P73
- P74
- P75
- P76
- P77
- P78
- P79
- P80
- P81
- P82
- P83
- P84
- P85
- P86
- P87
- P88
- P89
- P90
- P91
- P92
- P93
- P94
- P95
- P96
- P97
- P98
- P99
- P100
- P101
- P102
- P103
- P104
- P105
- P106
- P107
- P108
- P109