Power MOSFET

Power MOSFET 500 mA, 60 V, N−Channel SOT−23 Features • NVBF Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

单 N 沟道，功率 MOSFET，60V，500mA，5Ω

Power MOSFET\n500 mA, 60 V, N−Channel SOT−23 • RoHS Compliant;

0.5A, 60V N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

DESCRIPTION The UTC MMBF170 is an N-channel enhancement MOSFET using UTC’s advanced technology to provide the customers with perfect RDS(ON), low input capacitance, low gate threshold voltage and high switching speed. FEATURES * RDS(ON)

Power MOSFET 500 mA, 60 V

Power MOSFET 500 mA, 60 V N-Channel SOT-23 Features • Pb-Free Packages are Available

TMOS FET Transistor

TMOS FET Transistor N–Channel

Power MOSFET 500 mA, 60 V

Power MOSFET 500 mA, 60 V N-Channel SOT-23 Features • Pb-Free Packages are Available

Power MOSFET

Power MOSFET 500 mA, 60 V, N−Channel SOT−23 Features • NVBF Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

Power MOSFET 500 mA, 60 V

Power MOSFET 500 mA, 60 V N-Channel SOT-23 Features • Pb-Free Packages are Available

Power MOSFET

Power MOSFET 500 mA, 60 V, N−Channel SOT−23 Features • NVBF Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

Power MOSFET 500 mA, 60 V

Power MOSFET 500 mA, 60 V N-Channel SOT-23 Features • Pb-Free Packages are Available

Power MOSFET 500 mA, 60 V N-Channel SOT-23

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TMOS FET Transistor

Power MOSFET 500 mA, 60 V N-Channel SOT-23

文件：82.76 Kbytes Page：5 Pages

Power MOSFET 500 mA, 60 V N-Channel SOT-23

文件：82.76 Kbytes Page：5 Pages

N-Channel 60-V (D-S) MOSFET

文件：1.7408 Mbytes Page：8 Pages

Power MOSFET 500 mA, 60 V N-Channel SOT-23

文件：82.76 Kbytes Page：5 Pages

Power MOSFET 500 mA, 60 V N-Channel SOT-23

文件：82.76 Kbytes Page：5 Pages

TMOS FET Switching(N-Channel-Enhancement)

TMOS FET Switching N–Channel — Enhancement

POWER TRANSISTORS(3.0A,40-80V,12.5W)

COMPLEMENTARY SILICON PLASTIC POWER TRANSISTORS

500 mW DHD ZENER DIODE DO-35

DESCRIPTION NEC Type RD2.0E to RD200E Series are planar type zener diode in the popular DO-35 package with DHD (Double Heatsink Diode) construction having allowable power dissipation of 500 mW. To meet various application at customers, Vz (zener voltage) is classified into the tight tolerance und

500 mW DHD ZENER DIODE DO-35

DESCRIPTION NEC Type RD2.0E to RD200E Series are planar type zener diode in the popular DO-35 package with DHD (Double Heatsink Diode) construction having allowable power dissipation of 500 mW. To meet various application at customers, Vz (zener voltage) is classified into the tight tolerance und

MOSORB ZENER OVERVOLTAGE TRANSIENT SUPPRESSORS

The SA5.0A series is designed to protect voltage sensitive components from high voltage, high energy transients. They have excellent clamping capability, high surge capability, low zener impedance and fast response time. The SA5.0A series is supplied in Motorola’s exclusive, cost-effective, highly