N-Channel Enhancement Mode Field Effect Transistor

General Description These N-Channel enhancement mode field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. They can b

Small Signal MOSFET Small Signal MOSFET Small Signal MOSFET

General Description These N-Channel enhancement mode field effect transistors are produced using ON Semiconductors proprietary, high cell density, DMOS technology. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. The

N-Channel Enhancement Mode Field Effect Transistor

General Description These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. They can

N-channel vertical D-MOS transistor

DESCRIPTION N-channel enhancement mode vertical D-MOS transistor in TO-92 variant envelope and intended for use in relay, high-speed and line-transformer drivers. FEATURES • Very low RDS(on). • Direct interface to C-MOS, TTL, etc. • High-speed switching. • No secondary breakdow

N-Channel 60-V (D-S) MOSFET

FEATURES ● Low On-Resistance: 2.5 Ω ● Low Threshold: 2.1 V ● Low Input Capacitance: 22 pF ● Fast Switching Speed: 7 ns ● Low Input and Output Leakage BENEFITS ● Low Offset Voltage ● Low-Voltage Operation ● Easily Driven Without Buffer ● High-Speed Circuits ● Low Error Voltage APPLICATI

N-Channel 60-V (D-S) MOSFET

FEATURES ● Low On-Resistance: 2.5 Ω ● Low Threshold: 2.1 V ● Low Input Capacitance: 22 pF ● Fast Switching Speed: 7 ns ● Low Input and Output Leakage BENEFITS ● Low Offset Voltage ● Low-Voltage Operation ● Easily Driven Without Buffer ● High-Speed Circuits ● Low Error Voltage APPLICATI

N-CHANNEL ENHANCEMENT MODE TRANSISTOR

Features • High Input Impedance • Fast Switching Speed • CMOS Logic Compatible Input • No Thermal Runaway or Secondary BreakdFeatures

TMOS FET Switching(N-Channel-Enhancement)

TMOS FET Switching N–Channel — Enhancement

DMOS Transistors (N-Channel)

FEATURES ♦ High input impedance ♦ High-speed switching ♦ No minority carrier storage time ♦ CMOS logic compatible input ♦ No thermal runaway ♦ No secondary breakdown

SIPMOS Small-Signal Transistor (N channel Enhancement mode Logic Level)

• N channel • Enhancement mode • Logic Level • VGS(th) = 0.8...2.0V

N-Channel Enhancement Mode Field Effect Transistor

Features ■ High density cell design for low RDS(ON). ■ Voltage controlled small signal switch. ■ Rugged and reliable. ■ High saturation current capability.

DMOS Transistors (N-Channel)

FEATURES\n♦ High input impedance\n♦ High-speed switching\n♦ No minority carrier storage time\n♦ CMOS logic compatible input\n♦ No thermal runaway\n♦ No secondary breakdown ♦ High input impedance\n♦ High-speed switching\n♦ No minority carrier storage time\n♦ CMOS logic compatible input\n♦ No thermal runaway\n♦ No secondary breakdown;

SIPMOS® Small-Signal Transistor

• N channel\n• Enhancement mode\n• Logic Level\n• VGS(th) = 0.8...2.0V

Trans MOSFET N-CH 60V 0.5A 3-Pin TO-92 Bulk

N-Channel 60-V (D-S) MOSFET

文件：68.91 Kbytes Page：7 Pages

N-Channel 60-V (D-S) MOSFET

文件：64.519 Kbytes Page：6 Pages

N-Channel 60-V (D-S) MOSFET

文件：64.519 Kbytes Page：6 Pages

Small Signal MOSFET 500 mA, 60 Volts N?묬hannel TO??2 (TO??26)

文件：57.97 Kbytes Page：4 Pages

N-Channel Enhancement Mode Field Effect Transistor

文件：517.87 Kbytes Page：13 Pages

丝印代码：BS170P；60V N-CHANNEL ENHANCEMENT MODE VERTICAL DMOSFET

Features BVDSS > 60V RDS(ON) ≤ 5Ω @ VGS= 10V ID = 270mA Maximum Continuous Drain Current Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability

丝印代码：BS170P；60V N-CHANNEL ENHANCEMENT MODE VERTICAL DMOSFET

Features BVDSS > 60V RDS(ON) ≤ 5Ω @ VGS= 10V ID = 270mA Maximum Continuous Drain Current Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability

N-Channel Enhancement Mode Field Effect Transistor

General Description These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. They can

N-Channel Enhancement Mode Field Effect Transistor

General Description These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. They can

N-Channel Enhancement Mode Field Effect Transistor

General Description These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. They can

N-Channel Enhancement Mode Field Effect Transistor

General Description These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. They can

60Volt VDS

FEATURES * 60Volt VDS * RDS(ON) = 5Ω PARTMARKING DETAIL – MV

N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET

FEATURES * 60Volt VDS * RDS(ON) = 5Ω PARTMARKING DETAIL – MV

N-Channel 60-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • Low Threshold: 2 V (typ.) • Low Input Capacitance: 25 pF • Fast Switching Speed: 25 ns • Low Input and Output Leakage • TrenchFET® Power MOSFET • 1200V ESD Protection • Compliant to RoHS Directive 2002/95/EC BENEFITS • Low

丝印代码：7002；60V N-Channel Mosfet

Application ® Dict logic evel interface: TTLICMOS ® Divers: rays, solenoids, lamps, hammers display, memories, transistors, tc. ® Battery operated systems ® Solid-state relays

丝印代码：MV；N-Channel 60 V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • Low Threshold: 2 V (typ.) • Low Input Capacitance: 25 pF • Fast Switching Speed: 25 ns • Low Input and Output Leakage • TrenchFET® Power MOSFET • 1200V ESD Protection • Compliant to RoHS Directive 2002/95/EC BENEFITS • L

Small Signal MOSFET 500 mA, 60 Volts

Small Signal MOSFET 500 mA, 60 Volts N−Channel TO−92 (TO−226) Features • Pb−Free Package is Available*

Small Signal MOSFET Small Signal MOSFET Small Signal MOSFET

General Description These N-Channel enhancement mode field effect transistors are produced using ON Semiconductors proprietary, high cell density, DMOS technology. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. The

N-Channel 60-V (D-S) MOSFET

FEATURES • TrenchFET® Power MOSFET • ESD Protected: 2000 V APPLICATIONS • Direct Logic-Level Interface: TTL/CMOS • Solid-State Relays • Drivers: Relays, Solenoids, Lamps, Hammers,    Display, Memories, Transistors, etc. • Battery Operated Systems

N-Channel 60-V (D-S) MOSFET

FEATURES • TrenchFET® Power MOSFET • ESD Protected: 2000 V APPLICATIONS • Direct Logic-Level Interface: TTL/CMOS • Solid-State Relays • Drivers: Relays, Solenoids, Lamps, Hammers,    Display, Memories, Transistors, etc. • Battery Operated Systems

N-Channel Enhancement-Mode MOS Transistor

DESCRIPTION The 2N7000 utilizes Calogic’s vertical DMOS technology. The device is well suited for switching applications where BV of 60V and low on resistance (under 5 ohms) are required. The 2N7000 is housed in a plastic TO-92 package.

Small Signal MOSFET Small Signal MOSFET Small Signal MOSFET

General Description These N-Channel enhancement mode field effect transistors are produced using ON Semiconductors proprietary, high cell density, DMOS technology. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. The

Small Signal MOSFET Small Signal MOSFET Small Signal MOSFET

General Description These N-Channel enhancement mode field effect transistors are produced using ON Semiconductors proprietary, high cell density, DMOS technology. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. The

Small Signal MOSFET 500 mA, 60 Volts

Small Signal MOSFET 500 mA, 60 Volts N−Channel TO−92 (TO−226) Features • Pb−Free Package is Available*

Small Signal MOSFET Small Signal MOSFET Small Signal MOSFET

General Description These N-Channel enhancement mode field effect transistors are produced using ON Semiconductors proprietary, high cell density, DMOS technology. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. The

Small Signal MOSFET Small Signal MOSFET Small Signal MOSFET

General Description These N-Channel enhancement mode field effect transistors are produced using ON Semiconductors proprietary, high cell density, DMOS technology. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. The

Small Signal MOSFET Small Signal MOSFET Small Signal MOSFET

General Description These N-Channel enhancement mode field effect transistors are produced using ON Semiconductors proprietary, high cell density, DMOS technology. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. The

N-Channel Enhancement Mode Field Effect Transistor

文件：517.87 Kbytes Page：13 Pages

Small Signal MOSFET 500 mA, 60 Volts N?묬hannel TO??2 (TO??26)

文件：57.97 Kbytes Page：4 Pages

SOT23 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET

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SOT23 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET

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Small Signal MOSFET 500 mA, 60 Volts N?묬hannel TO??2 (TO??26)

文件：57.97 Kbytes Page：4 Pages

N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET

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Small Signal MOSFET 500 mA, 60 Volts N?묬hannel TO??2 (TO??26)

文件：57.97 Kbytes Page：4 Pages

Small Signal MOSFET 500 mA, 60 Volts N?묬hannel TO??2 (TO??26)

文件：57.97 Kbytes Page：4 Pages

Small Signal MOSFET 500 mA, 60 Volts N?묬hannel TO??2 (TO??26)

文件：57.97 Kbytes Page：4 Pages

Small Signal MOSFET 500 mA, 60 Volts N?묬hannel TO??2 (TO??26)

文件：57.97 Kbytes Page：4 Pages

Small Signal MOSFET 500 mA, 60 Volts N?묬hannel TO??2 (TO??26)

文件：57.97 Kbytes Page：4 Pages

Small Signal MOSFET 500 mA, 60 Volts N?묬hannel TO??2 (TO??26)

文件：57.97 Kbytes Page：4 Pages

Small Signal MOSFET 500 mA, 60 Volts N?묬hannel TO??2 (TO??26)

文件：57.97 Kbytes Page：4 Pages

Small Signal MOSFET 500 mA, 60 Volts N?묬hannel TO??2 (TO??26)

文件：57.97 Kbytes Page：4 Pages

Small Signal MOSFET 500 mA, 60 Volts N?묬hannel TO??2 (TO??26)

文件：57.97 Kbytes Page：4 Pages

Small Signal MOSFET 500 mA, 60 Volts N?묬hannel TO??2 (TO??26)

文件：57.97 Kbytes Page：4 Pages

POWER TRANSISTORS(3.0A,40-80V,12.5W)

COMPLEMENTARY SILICON PLASTIC POWER TRANSISTORS

500 mW DHD ZENER DIODE DO-35

DESCRIPTION NEC Type RD2.0E to RD200E Series are planar type zener diode in the popular DO-35 package with DHD (Double Heatsink Diode) construction having allowable power dissipation of 500 mW. To meet various application at customers, Vz (zener voltage) is classified into the tight tolerance und

500 mW DHD ZENER DIODE DO-35

DESCRIPTION NEC Type RD2.0E to RD200E Series are planar type zener diode in the popular DO-35 package with DHD (Double Heatsink Diode) construction having allowable power dissipation of 500 mW. To meet various application at customers, Vz (zener voltage) is classified into the tight tolerance und