TMOS FET Switching(N-Channel-Enhancement)

TMOS FET Switching N–Channel — Enhancement

N-channel vertical D-MOS transistor

DESCRIPTION N-channel enhancement mode vertical D-MOS transistor in TO-92 variant envelope and intended for use in relay, high-speed and line-transformer drivers. FEATURES • Very low RDS(on). • Direct interface to C-MOS, TTL, etc. • High-speed switching. • No secondary breakdow

N-Channel 60-V (D-S) MOSFET

FEATURES ● Low On-Resistance: 2.5 Ω ● Low Threshold: 2.1 V ● Low Input Capacitance: 22 pF ● Fast Switching Speed: 7 ns ● Low Input and Output Leakage BENEFITS ● Low Offset Voltage ● Low-Voltage Operation ● Easily Driven Without Buffer ● High-Speed Circuits ● Low Error Voltage APPLICATI

N-Channel Enhancement Mode Field Effect Transistor

General Description These N-Channel enhancement mode field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. They can b

N-CHANNEL ENHANCEMENT MODE TRANSISTOR

Features • High Input Impedance • Fast Switching Speed • CMOS Logic Compatible Input • No Thermal Runaway or Secondary BreakdFeatures

DMOS Transistors (N-Channel)

FEATURES ♦ High input impedance ♦ High-speed switching ♦ No minority carrier storage time ♦ CMOS logic compatible input ♦ No thermal runaway ♦ No secondary breakdown

Small Signal MOSFET Small Signal MOSFET Small Signal MOSFET

General Description These N-Channel enhancement mode field effect transistors are produced using ON Semiconductors proprietary, high cell density, DMOS technology. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. The

SIPMOS Small-Signal Transistor (N channel Enhancement mode Logic Level)

• N channel • Enhancement mode • Logic Level • VGS(th) = 0.8...2.0V

N-Channel 60-V (D-S) MOSFET

FEATURES ● Low On-Resistance: 2.5 Ω ● Low Threshold: 2.1 V ● Low Input Capacitance: 22 pF ● Fast Switching Speed: 7 ns ● Low Input and Output Leakage BENEFITS ● Low Offset Voltage ● Low-Voltage Operation ● Easily Driven Without Buffer ● High-Speed Circuits ● Low Error Voltage APPLICATI

N-Channel Enhancement Mode Field Effect Transistor

Features ■ High density cell design for low RDS(ON). ■ Voltage controlled small signal switch. ■ Rugged and reliable. ■ High saturation current capability.

N-Channel 60-V (D-S) MOSFET

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N-Channel 60-V (D-S) MOSFET

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N-Channel 60-V (D-S) MOSFET

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N-Channel Enhancement Mode Field Effect Transistor

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Small Signal MOSFET 500 mA, 60 Volts N?묬hannel TO??2 (TO??26)

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60Volt VDS

FEATURES * 60Volt VDS * RDS(ON) = 5Ω PARTMARKING DETAIL – MV

N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET

FEATURES * 60Volt VDS * RDS(ON) = 5Ω PARTMARKING DETAIL – MV

N-Channel 60-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • Low Threshold: 2 V (typ.) • Low Input Capacitance: 25 pF • Fast Switching Speed: 25 ns • Low Input and Output Leakage • TrenchFET® Power MOSFET • 1200V ESD Protection • Compliant to RoHS Directive 2002/95/EC BENEFITS • Low

N-Channel 60 V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • Low Threshold: 2 V (typ.) • Low Input Capacitance: 25 pF • Fast Switching Speed: 25 ns • Low Input and Output Leakage • TrenchFET® Power MOSFET • 1200V ESD Protection • Compliant to RoHS Directive 2002/95/EC BENEFITS • L

60V N-Channel Mosfet

Application ® Dict logic evel interface: TTLICMOS ® Divers: rays, solenoids, lamps, hammers display, memories, transistors, tc. ® Battery operated systems ® Solid-state relays

Small Signal MOSFET Small Signal MOSFET Small Signal MOSFET

General Description These N-Channel enhancement mode field effect transistors are produced using ON Semiconductors proprietary, high cell density, DMOS technology. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. The

Small Signal MOSFET 500 mA, 60 Volts

Small Signal MOSFET 500 mA, 60 Volts N−Channel TO−92 (TO−226) Features • Pb−Free Package is Available*

N-Channel 60-V (D-S) MOSFET

FEATURES • TrenchFET® Power MOSFET • ESD Protected: 2000 V APPLICATIONS • Direct Logic-Level Interface: TTL/CMOS • Solid-State Relays • Drivers: Relays, Solenoids, Lamps, Hammers,    Display, Memories, Transistors, etc. • Battery Operated Systems

N-Channel 60-V (D-S) MOSFET

FEATURES • TrenchFET® Power MOSFET • ESD Protected: 2000 V APPLICATIONS • Direct Logic-Level Interface: TTL/CMOS • Solid-State Relays • Drivers: Relays, Solenoids, Lamps, Hammers,    Display, Memories, Transistors, etc. • Battery Operated Systems

N-Channel Enhancement-Mode MOS Transistor

DESCRIPTION The 2N7000 utilizes Calogic’s vertical DMOS technology. The device is well suited for switching applications where BV of 60V and low on resistance (under 5 ohms) are required. The 2N7000 is housed in a plastic TO-92 package.

60V N-CHANNEL ENHANCEMENT MODE VERTICAL DMOSFET

Features BVDSS > 60V RDS(ON) ≤ 5Ω @ VGS= 10V ID = 270mA Maximum Continuous Drain Current Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability

60V N-CHANNEL ENHANCEMENT MODE VERTICAL DMOSFET

Features BVDSS > 60V RDS(ON) ≤ 5Ω @ VGS= 10V ID = 270mA Maximum Continuous Drain Current Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability

Small Signal MOSFET Small Signal MOSFET Small Signal MOSFET

General Description These N-Channel enhancement mode field effect transistors are produced using ON Semiconductors proprietary, high cell density, DMOS technology. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. The

Small Signal MOSFET Small Signal MOSFET Small Signal MOSFET

General Description These N-Channel enhancement mode field effect transistors are produced using ON Semiconductors proprietary, high cell density, DMOS technology. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. The

Small Signal MOSFET 500 mA, 60 Volts

Small Signal MOSFET 500 mA, 60 Volts N−Channel TO−92 (TO−226) Features • Pb−Free Package is Available*

Small Signal MOSFET Small Signal MOSFET Small Signal MOSFET

General Description These N-Channel enhancement mode field effect transistors are produced using ON Semiconductors proprietary, high cell density, DMOS technology. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. The

Small Signal MOSFET Small Signal MOSFET Small Signal MOSFET

General Description These N-Channel enhancement mode field effect transistors are produced using ON Semiconductors proprietary, high cell density, DMOS technology. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. The

Small Signal MOSFET Small Signal MOSFET Small Signal MOSFET

General Description These N-Channel enhancement mode field effect transistors are produced using ON Semiconductors proprietary, high cell density, DMOS technology. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. The

N-Channel Enhancement Mode Field Effect Transistor

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Small Signal MOSFET 500 mA, 60 Volts N?묬hannel TO??2 (TO??26)

文件：57.97 Kbytes Page：4 Pages

SOT23 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET

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SOT23 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET

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Small Signal MOSFET 500 mA, 60 Volts N?묬hannel TO??2 (TO??26)

文件：57.97 Kbytes Page：4 Pages

N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET

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Small Signal MOSFET 500 mA, 60 Volts N?묬hannel TO??2 (TO??26)

文件：57.97 Kbytes Page：4 Pages

Small Signal MOSFET 500 mA, 60 Volts N?묬hannel TO??2 (TO??26)

文件：57.97 Kbytes Page：4 Pages

Small Signal MOSFET 500 mA, 60 Volts N?묬hannel TO??2 (TO??26)

文件：57.97 Kbytes Page：4 Pages

Small Signal MOSFET 500 mA, 60 Volts N?묬hannel TO??2 (TO??26)

文件：57.97 Kbytes Page：4 Pages

Small Signal MOSFET 500 mA, 60 Volts N?묬hannel TO??2 (TO??26)

文件：57.97 Kbytes Page：4 Pages

Small Signal MOSFET 500 mA, 60 Volts N?묬hannel TO??2 (TO??26)

文件：57.97 Kbytes Page：4 Pages

Small Signal MOSFET 500 mA, 60 Volts N?묬hannel TO??2 (TO??26)

文件：57.97 Kbytes Page：4 Pages

Small Signal MOSFET 500 mA, 60 Volts N?묬hannel TO??2 (TO??26)

文件：57.97 Kbytes Page：4 Pages

Small Signal MOSFET 500 mA, 60 Volts N?묬hannel TO??2 (TO??26)

文件：57.97 Kbytes Page：4 Pages

Small Signal MOSFET 500 mA, 60 Volts N?묬hannel TO??2 (TO??26)

文件：57.97 Kbytes Page：4 Pages

Surface Mount TRANSZORB Transient Voltage Suppressors

FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • Available in uni-directional and bi-directional • 600 W peak pulse power capability with a 10/1000 μs waveform, repetitive rate (duty cycle): 0.01 • Excellent clamping capability • Very fast r

ROD SEALS

DESCRIPTION The BECA 170 - 179 profiles are double acting composite rod seals composed of a filled PTFE friction ring and pre-tightened rubber O'Ring. They can be mounted in the grooves of the O'Rings. Option of connecting the seal to 1 or 2 back-up rings. APPLICATIONS Machine tools

Hard Wired 170 Series

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Custom Power Modules

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RUGGED and LIGHTWEIGHT ALUMINUM BATTERY HOLDERS

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