BS170价格

参考价格:¥0.3214

型号:BS170 品牌:FAIRCHILD 备注:这里有BS170多少钱,2024年最近7天走势,今日出价,今日竞价,BS170批发/采购报价,BS170行情走势销售排行榜,BS170报价。
型号 功能描述 生产厂家&企业 LOGO 操作
BS170

TMOSFETSwitching(N-Channel-Enhancement)

TMOSFETSwitching N–Channel—Enhancement

MotorolaMotorola, Inc

摩托罗拉

Motorola
BS170

N-channelverticalD-MOStransistor

DESCRIPTION N-channelenhancementmodeverticalD-MOStransistorinTO-92variantenvelopeandintendedforuseinrelay,high-speedandline-transformerdrivers. FEATURES •VerylowRDS(on). •DirectinterfacetoC-MOS,TTL,etc. •High-speedswitching. •Nosecondarybreakdow

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

Philips
BS170

N-Channel60-V(D-S)MOSFET

FEATURES ●LowOn-Resistance:2.5Ω ●LowThreshold:2.1V ●LowInputCapacitance:22pF ●FastSwitchingSpeed:7ns ●LowInputandOutputLeakage BENEFITS ●LowOffsetVoltage ●Low-VoltageOperation ●EasilyDrivenWithoutBuffer ●High-SpeedCircuits ●LowErrorVoltage APPLICATI

VishayVishay Siliconix

威世科技

Vishay
BS170

N-ChannelEnhancementModeFieldEffectTransistor

GeneralDescription TheseN-ChannelenhancementmodefieldeffecttransistorsareproducedusingFairchildsproprietary,highcelldensity,DMOStechnology.Theseproductshavebeendesignedtominimizeon-stateresistancewhileproviderugged,reliable,andfastswitchingperformance.Theycanb

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild
BS170

N-CHANNELENHANCEMENTMODETRANSISTOR

Features •HighInputImpedance •FastSwitchingSpeed •CMOSLogicCompatibleInput •NoThermalRunawayorSecondaryBreakdFeatures

DIODESDiodes Incorporated

达尔科技

DIODES
BS170

DMOSTransistors(N-Channel)

FEATURES ♦Highinputimpedance ♦High-speedswitching ♦Nominoritycarrierstoragetime ♦CMOSlogiccompatibleinput ♦Nothermalrunaway ♦Nosecondarybreakdown

GE

GE Industrial Company

GE
BS170

SmallSignalMOSFETSmallSignalMOSFETSmallSignalMOSFET

GeneralDescription TheseN-ChannelenhancementmodefieldeffecttransistorsareproducedusingONSemiconductorsproprietary,highcelldensity,DMOStechnology.Theseproductshavebeendesignedtominimizeon-stateresistancewhileproviderugged,reliable,andfastswitchingperformance.The

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
BS170

SIPMOSSmall-SignalTransistor(NchannelEnhancementmodeLogicLevel)

•Nchannel •Enhancementmode •LogicLevel •VGS(th)=0.8...2.0V

SIEMENS

Siemens Ltd

SIEMENS
BS170

N-Channel60-V(D-S)MOSFET

FEATURES ●LowOn-Resistance:2.5Ω ●LowThreshold:2.1V ●LowInputCapacitance:22pF ●FastSwitchingSpeed:7ns ●LowInputandOutputLeakage BENEFITS ●LowOffsetVoltage ●Low-VoltageOperation ●EasilyDrivenWithoutBuffer ●High-SpeedCircuits ●LowErrorVoltage APPLICATI

VishayVishay Siliconix

威世科技

Vishay
BS170

N-Channel60-V(D-S)MOSFET

文件:68.91 Kbytes Page:7 Pages

VishayVishay Siliconix

威世科技

Vishay
BS170

N-Channel60-V(D-S)MOSFET

文件:64.519 Kbytes Page:6 Pages

VishayVishay Siliconix

威世科技

Vishay
BS170

N-Channel60-V(D-S)MOSFET

文件:64.519 Kbytes Page:6 Pages

VishayVishay Siliconix

威世科技

Vishay
BS170

SmallSignalMOSFET500mA,60VoltsN?묬hannelTO??2(TO??26)

文件:57.97 Kbytes Page:4 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
BS170

N-ChannelEnhancementModeFieldEffectTransistor

文件:517.87 Kbytes Page:13 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

60VoltVDS

FEATURES *60VoltVDS *RDS(ON)=5Ω PARTMARKINGDETAIL–MV

DIODESDiodes Incorporated

达尔科技

DIODES

N-CHANNELENHANCEMENTMODEVERTICALDMOSFET

FEATURES *60VoltVDS *RDS(ON)=5Ω PARTMARKINGDETAIL–MV

DIODESDiodes Incorporated

达尔科技

DIODES

N-Channel60-V(D-S)MOSFET

FEATURES •Halogen-freeAccordingtoIEC61249-2-21Definition •LowThreshold:2V(typ.) •LowInputCapacitance:25pF •FastSwitchingSpeed:25ns •LowInputandOutputLeakage •TrenchFET®PowerMOSFET •1200VESDProtection •ComplianttoRoHSDirective2002/95/EC BENEFITS •Low

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

VBSEMI

SmallSignalMOSFETSmallSignalMOSFETSmallSignalMOSFET

GeneralDescription TheseN-ChannelenhancementmodefieldeffecttransistorsareproducedusingONSemiconductorsproprietary,highcelldensity,DMOStechnology.Theseproductshavebeendesignedtominimizeon-stateresistancewhileproviderugged,reliable,andfastswitchingperformance.The

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

SmallSignalMOSFET500mA,60Volts

SmallSignalMOSFET500mA,60Volts N−ChannelTO−92(TO−226) Features •Pb−FreePackageisAvailable*

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

N-Channel60-V(D-S)MOSFET

FEATURES •TrenchFET®PowerMOSFET •ESDProtected:2000V APPLICATIONS •DirectLogic-LevelInterface:TTL/CMOS •Solid-StateRelays •Drivers:Relays,Solenoids,Lamps,Hammers,   Display,Memories,Transistors,etc. •BatteryOperatedSystems

VishayVishay Siliconix

威世科技

Vishay

N-Channel60-V(D-S)MOSFET

FEATURES •TrenchFET®PowerMOSFET •ESDProtected:2000V APPLICATIONS •DirectLogic-LevelInterface:TTL/CMOS •Solid-StateRelays •Drivers:Relays,Solenoids,Lamps,Hammers,   Display,Memories,Transistors,etc. •BatteryOperatedSystems

VishayVishay Siliconix

威世科技

Vishay

N-ChannelEnhancement-ModeMOSTransistor

DESCRIPTION The2N7000utilizesCalogic’sverticalDMOStechnology.ThedeviceiswellsuitedforswitchingapplicationswhereBVof60Vandlowonresistance(under5ohms)arerequired.The2N7000ishousedinaplasticTO-92package.

Calogic

Calogic

Calogic

60VN-CHANNELENHANCEMENTMODEVERTICALDMOSFET

Features BVDSS>60V RDS(ON)≤5Ω@VGS=10V ID=270mAMaximumContinuousDrainCurrent TotallyLead-Free&FullyRoHSCompliant(Notes1&2) HalogenandAntimonyFree.“Green”Device(Note3) QualifiedtoAEC-Q101StandardsforHighReliability

DIODESDiodes Incorporated

达尔科技

DIODES

60VN-CHANNELENHANCEMENTMODEVERTICALDMOSFET

Features BVDSS>60V RDS(ON)≤5Ω@VGS=10V ID=270mAMaximumContinuousDrainCurrent TotallyLead-Free&FullyRoHSCompliant(Notes1&2) HalogenandAntimonyFree.“Green”Device(Note3) QualifiedtoAEC-Q101StandardsforHighReliability

DIODESDiodes Incorporated

达尔科技

DIODES

SmallSignalMOSFETSmallSignalMOSFETSmallSignalMOSFET

GeneralDescription TheseN-ChannelenhancementmodefieldeffecttransistorsareproducedusingONSemiconductorsproprietary,highcelldensity,DMOStechnology.Theseproductshavebeendesignedtominimizeon-stateresistancewhileproviderugged,reliable,andfastswitchingperformance.The

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

SmallSignalMOSFETSmallSignalMOSFETSmallSignalMOSFET

GeneralDescription TheseN-ChannelenhancementmodefieldeffecttransistorsareproducedusingONSemiconductorsproprietary,highcelldensity,DMOStechnology.Theseproductshavebeendesignedtominimizeon-stateresistancewhileproviderugged,reliable,andfastswitchingperformance.The

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

SmallSignalMOSFET500mA,60Volts

SmallSignalMOSFET500mA,60Volts N−ChannelTO−92(TO−226) Features •Pb−FreePackageisAvailable*

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

SmallSignalMOSFETSmallSignalMOSFETSmallSignalMOSFET

GeneralDescription TheseN-ChannelenhancementmodefieldeffecttransistorsareproducedusingONSemiconductorsproprietary,highcelldensity,DMOStechnology.Theseproductshavebeendesignedtominimizeon-stateresistancewhileproviderugged,reliable,andfastswitchingperformance.The

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

SmallSignalMOSFETSmallSignalMOSFETSmallSignalMOSFET

GeneralDescription TheseN-ChannelenhancementmodefieldeffecttransistorsareproducedusingONSemiconductorsproprietary,highcelldensity,DMOStechnology.Theseproductshavebeendesignedtominimizeon-stateresistancewhileproviderugged,reliable,andfastswitchingperformance.The

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

SmallSignalMOSFETSmallSignalMOSFETSmallSignalMOSFET

GeneralDescription TheseN-ChannelenhancementmodefieldeffecttransistorsareproducedusingONSemiconductorsproprietary,highcelldensity,DMOStechnology.Theseproductshavebeendesignedtominimizeon-stateresistancewhileproviderugged,reliable,andfastswitchingperformance.The

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

N-ChannelEnhancementModeFieldEffectTransistor

文件:517.87 Kbytes Page:13 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

SmallSignalMOSFET500mA,60VoltsN?묬hannelTO??2(TO??26)

文件:57.97 Kbytes Page:4 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

SOT23N-CHANNELENHANCEMENTMODEVERTICALDMOSFET

文件:23.91 Kbytes Page:1 Pages

ETC1List of Unclassifed Manufacturers

未分类制造商

ETC1

SOT23N-CHANNELENHANCEMENTMODEVERTICALDMOSFET

文件:26.48 Kbytes Page:1 Pages

DIODESDiodes Incorporated

达尔科技

DIODES

SmallSignalMOSFET500mA,60VoltsN?묬hannelTO??2(TO??26)

文件:57.97 Kbytes Page:4 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

N-CHANNELENHANCEMENTMODEVERTICALDMOSFET

文件:22.09 Kbytes Page:1 Pages

Zetex

Zetex Semiconductors

Zetex

SmallSignalMOSFET500mA,60VoltsN?묬hannelTO??2(TO??26)

文件:57.97 Kbytes Page:4 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

SmallSignalMOSFET500mA,60VoltsN?묬hannelTO??2(TO??26)

文件:57.97 Kbytes Page:4 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

SmallSignalMOSFET500mA,60VoltsN?묬hannelTO??2(TO??26)

文件:57.97 Kbytes Page:4 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

SmallSignalMOSFET500mA,60VoltsN?묬hannelTO??2(TO??26)

文件:57.97 Kbytes Page:4 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

SmallSignalMOSFET500mA,60VoltsN?묬hannelTO??2(TO??26)

文件:57.97 Kbytes Page:4 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

SmallSignalMOSFET500mA,60VoltsN?묬hannelTO??2(TO??26)

文件:57.97 Kbytes Page:4 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

SmallSignalMOSFET500mA,60VoltsN?묬hannelTO??2(TO??26)

文件:57.97 Kbytes Page:4 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

SmallSignalMOSFET500mA,60VoltsN?묬hannelTO??2(TO??26)

文件:57.97 Kbytes Page:4 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

SmallSignalMOSFET500mA,60VoltsN?묬hannelTO??2(TO??26)

文件:57.97 Kbytes Page:4 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

SmallSignalMOSFET500mA,60VoltsN?묬hannelTO??2(TO??26)

文件:57.97 Kbytes Page:4 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

SurfaceMountTRANSZORBTransientVoltageSuppressors

FEATURES •Lowprofilepackage •Idealforautomatedplacement •Glasspassivatedchipjunction •Availableinuni-directionalandbi-directional •600Wpeakpulsepowercapabilitywitha10/1000μswaveform,repetitiverate(dutycycle):0.01 •Excellentclampingcapability •Veryfastr

VishayVishay Siliconix

威世科技

Vishay

HardWired170Series

文件:124.25 Kbytes Page:1 Pages

HAMMOND

Hammond Manufacturing Ltd.

HAMMOND

RUGGEDandLIGHTWEIGHTALUMINUMBATTERYHOLDERS

文件:115.71 Kbytes Page:2 Pages

etc2List of Unclassifed Manufacturers

etc2未分类制造商

etc2

CustomPowerModules

文件:40.15 Kbytes Page:2 Pages

BITECH

瑞谷拜特上海瑞谷拜特软件技术有限公司

BITECH

HardWired170Series

文件:124.25 Kbytes Page:1 Pages

HAMMOND

Hammond Manufacturing Ltd.

HAMMOND

BS170产品属性

  • 类型

    描述

  • 型号

    BS170

  • 功能描述

    MOSFET N-Channel MOSFET

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    N-Channel

  • 汲极/源极击穿电压

    650 V

  • 闸/源击穿电压

    25 V

  • 漏极连续电流

    130 A 电阻汲极/源极

  • RDS(导通)

    0.014 Ohms

  • 配置

    Single

  • 安装风格

    Through Hole

  • 封装/箱体

    Max247

  • 封装

    Tube

更新时间:2024-4-27 11:45:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
FAIRCHI
17+
TO-92
6000
ON
23+
TO-92
56000
21+
TO-252
17500
优势代理渠道,原装正品,可全系列订货开增值税票
ON/安森美
TO-92
72214
1520
只做原装正品,现货
ZETEX
23+
SOT-23
45000
热卖优势现货
21+
TO-92
12588
原装正品,自己库存 假一罚十
ON
2020+
TO-92
8000
只做自己库存,全新原装进口正品假一赔百,可开13%增
FAIRCHILD
19+
TO-92
66442
原厂代理渠道,每一颗芯片都可追溯原厂;
三年内
1983
纳立只做原装正品13590203865
ON
20+
TO-92
30000
全新原装正品 现货供应

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