MJE170晶体管资料
MJE170别名：MJE170三极管、MJE170晶体管、MJE170晶体三极管
MJE170生产厂家：美国摩托罗拉半导体公司
MJE170制作材料：Si-PNP
MJE170性质：低频或音频放大 （LF）_功率放大 （L）
MJE170封装形式：直插封装
MJE170极限工作电压：40V
MJE170最大电流允许值：3A
MJE170最大工作频率：<1MHZ或未知
MJE170引脚数：3
MJE170最大耗散功率：12.5W
MJE170放大倍数：
MJE170图片代号：B-21
MJE170vtest：40
MJE170htest：999900
- MJE170atest：3
MJE170wtest：12.5
MJE170代换 MJE170用什么型号代替：BD176,BD186,BD234,BD438,SCD373A,
MJE170价格
参考价格：￥1.0429
型号：MJE170G 品牌：ON 备注：这里有MJE170多少钱，2026年最近7天走势，今日出价，今日竞价，MJE170批发/采购报价，MJE170行情走势销售排行榜，MJE170报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
MJE170 | 丝印代码：MJE170；TO-126 Plastic-Encapsulate Transistors FEATURES Low Power Audio Amplifier Low Current, High Speed Switching Applications | DGNJDZ 南晶电子 |   | |
丝印代码：MJE170；TO-126 Plastic-Encapsulate Transistors FEATURES Low Power Audio Amplifier Low Current, High Speed Switching Applications | DGNJDZ 南晶电子 | | ||
MJE170 | Silicon PNP Power Transistors DESCRIPTION • With TO-126 package • Complement to type MJE180/181/182 APPLICATIONS • For low power audio amplifier and low current high speed switching applications | SAVANTIC | | |
MJE170 | Silicon PNP Power Transistors DESCRIPTION • With TO-126 package • Complement to type MJE180/181/182 APPLICATIONS • For low power audio amplifier and low current high speed switching applications | ISC 无锡固电 | | |
MJE170 | TO-126 Plastic-Encapsulate Transistors TRANSISTOR (PNP) FEATURES ● Low Power Audio Amplifier ● Low Current, High Speed Switching Applications | JIANGSU 长电科技 | | |
MJE170 | PNP PLASTIC POWER TRANSISTORS MJE170, 171, 172 PNP PLASTIC POWER TRANSISTORS MJE180, 181, 182 NPN PLASTIC POWER TRANSISTORS | CDIL | | |
MJE170 | POWER TRANSISTORS(3.0A,40-80V,12.5W) COMPLEMENTARY SILICON PLASTIC POWER TRANSISTORS | MOSPEC 统懋 | | |
MJE170 | PNP (LOW POWER AUDIO AMPLIFIER) PNP EPITAXIAL SILICON TRANSISTOR LOW POWER AUDIO AMPLIFIER LOW CURRENT, HIGH SPEED SWITCHING APPLICATIONS | SAMSUNG 三星 | | |
MJE170 | Low Power Audio Amplifier Low Current, High Speed Switching Applications PNP Epitaxial Silicon Transistor Low Power Audio Amplifier Low Current, High Speed Switching Applications | FAIRCHILD 仙童半导体 | | |
MJE170 | PNP General Purpose Transistor FEATURES ● Low frequency amplifier ● Low current ● High speed switching applications | SECOS 喜可士 | | |
MJE170 | SILICON COMPLEMENTRY POWER TRANSISTOR
| CENTRAL | | |
MJE170 | COMPLEMENTARY SILICON PLASTIC POWER TRANSISTORS COMPLEMENTARY SILICON PLASTIC POWER TRANSISTORS ... designed for low power amplifier and low current, high speed switchii applications. FEATURES: * Collector-Emitter Sustaining VoHage- VCEO(SUS) =40 V (Min) - MJE170.MJE180 = 60 V (Min) - MJE171.MJE181 | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | |
MJE170 | 封装/外壳：TO-225AA，TO-126-3 包装：散装 描述：TRANS PNP 40V 3A TO126 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 | ONSEMI 安森美半导体 | | |
MJE170 | Transistor | Semiteh | | |
MJE170 | Medium Power Transistor | SECOS 喜可士 | | |
MJE170 | 晶体管 | JSCJ 长晶科技 | | |
MJE170 | Complementary Plastic Silicon Power Transistors 40 ??60 ??80 VOLTS 12.5 WATTS 文件：83.18 Kbytes Page：6 Pages | ONSEMI 安森美半导体 | | |
MJE170 | Silicon PNP Power Transistors 文件：104.44 Kbytes Page：3 Pages | SAVANTIC | | |
Complementary Plastic Silicon Power Transistors Complementary Plastic Silicon Power Transistors The MJE170/180 series is designed for low power audio amplifier and low current, high speed switching applications. Features • Collector−Emitter Sustaining Voltage − VCEO(sus) = 40 Vdc − MJE170, MJE180 = 60 Vdc − MJE171, | ONSEMI 安森美半导体 | | ||
PNP General Purpose Transistor 文件：110 Kbytes Page：3 Pages | SECOS 喜可士 | | ||
Complementary Plastic Silicon Power Transistors 40 ??60 ??80 VOLTS 12.5 WATTS 文件：83.18 Kbytes Page：6 Pages | ONSEMI 安森美半导体 | | ||
封装/外壳：TO-225AA，TO-126-3 包装：散装 描述：TRANS PNP 40V 3A TO126-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 | ONSEMI 安森美半导体 | | ||
TMOS FET Switching(N-Channel-Enhancement) TMOS FET Switching N–Channel — Enhancement | MOTOROLA 摩托罗拉 | | ||
500 mW DHD ZENER DIODE DO-35 DESCRIPTION NEC Type RD2.0E to RD200E Series are planar type zener diode in the popular DO-35 package with DHD (Double Heatsink Diode) construction having allowable power dissipation of 500 mW. To meet various application at customers, Vz (zener voltage) is classified into the tight tolerance und | NEC 瑞萨 | | ||
500 mW DHD ZENER DIODE DO-35 DESCRIPTION NEC Type RD2.0E to RD200E Series are planar type zener diode in the popular DO-35 package with DHD (Double Heatsink Diode) construction having allowable power dissipation of 500 mW. To meet various application at customers, Vz (zener voltage) is classified into the tight tolerance und | NEC 瑞萨 | | ||
MOSORB ZENER OVERVOLTAGE TRANSIENT SUPPRESSORS The SA5.0A series is designed to protect voltage sensitive components from high voltage, high energy transients. They have excellent clamping capability, high surge capability, low zener impedance and fast response time. The SA5.0A series is supplied in Motorola’s exclusive, cost-effective, highly | MOTOROLA 摩托罗拉 | |
MJE170产品属性
- 类型
描述
- Compliance：
Pb-free
- Status：
Active
- Description：
PNP Epitaxial Silicon Transistor
- Polarity：
PNP
- Type：
General Purpose
- VCE(sat) Max (V)：
Condition
- IC Cont. (A)：
3
- VCEO Min (V)：
40
- VCBO (V)：
60
- VEBO (V)：
7
- VBE(sat) (V)：
Condition
- VBE(on) (V)：
Condition
- hFE Min：
Condition
- hFE Max：
Condition
- fT Min (MHz)：
Condition
- PTM Max (W)：
12.5
- Package Type：
TO-126-3
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ON/安森美 |
20+ |
TO-225AA |
67500 |
原装优势主营型号-可开原型号增税票 |
|||
ON/安森美 |
NA |
275000 |
一级代理原装正品,价格优势,长期供应! |
||||
MOTOROLA/摩托罗拉 |
2223+ |
TO-126 |
26800 |
只做原装正品假一赔十为客户做到零风险 |
|||
ON |
24+ |
NA |
3000 |
进口原装 假一罚十 现货 |
|||
ST |
25+ |
583 |
公司优势库存 热卖中! |
||||
FSC |
08+ |
TO-126F |
241 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
FAIRCHILD/仙童 |
2450+ |
TO-126F |
9850 |
只做原装正品现货或订货假一赔十! |
|||
ON |
25+ |
TO-225AA |
20000 |
原装 |
|||
ONSEMI |
22+ |
TO-126 |
5000 |
现货原装 假一赔十 |
|||
ON(安森美) |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
MJE170规格书下载地址
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