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MJD32晶体管资料
MJD32别名：MJD32三极管、MJD32晶体管、MJD32晶体三极管
MJD32生产厂家：韩国三星公司
MJD32制作材料：
MJD32性质：低频或音频放大 （LF）_功率放大 （PA）
MJD32封装形式：贴片封装
MJD32极限工作电压：
MJD32最大电流允许值：3A
MJD32最大工作频率：<1MHZ或未知
MJD32引脚数：3
MJD32最大耗散功率：15W
MJD32放大倍数：
MJD32图片代号：G-217
MJD32vtest：0
MJD32htest：999900
- MJD32atest：3
MJD32wtest：15
MJD32代换 MJD32用什么型号代替：
MJD32价格
参考价格：￥0.5725
型号：MJD32C-13 品牌：Diodes 备注：这里有MJD32多少钱，2025年最近7天走势，今日出价，今日竞价，MJD32批发/采购报价，MJD32行情走势销售排行榜，MJD32报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
MJD32 | General Purpose Amplifier Low Speed Switching Applications D-PAK for Surface Mount Applications General Purpose Amplifier Low Speed Switching Applications D-PAK for Surface Mount Applications • Load Formed for Surface Mount Application (No Suffix) • Straight Lead (I-PAK, “- I” Suffix) • Electrically Similar to Popular TIP32 and TIP32C | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 |   | |
MJD32 | Complementary Power Transistors Features ● Lead Formed for Surface Mount Applications in Plastic Sleeves ● Pb-Free Packages are Available | KEXIN 科信电子 | | |
MJD32 | Complementary Power Transistors Complementary Power Transistors DPAK For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. Features • Lead Formed for Surface Mount Applications in Plastic Sleeves • Straight Lead Version in Plastic Sleeves (“1” Suffix) • Lead Formed Versi | ONSEMI 安森美半导体 | | |
MJD32 | Complementary Power Transistors 文件：135.34 Kbytes Page：10 Pages | ONSEMI 安森美半导体 | | |
MJD32 | Complementary Power Transistors 文件：81.61 Kbytes Page：8 Pages | ONSEMI 安森美半导体 | | |
MJD32 | Transistors | ETC 知名厂家 | ETC | |
MJD32 | 3 A，40 V，PNP 双极功率晶体管 | ONSEMI 安森美半导体 | | |
COMPLEMENTARY SILICON POWER TRANSISTORS DESCRIPTION The MJD31B and MJD31C and the MJD32B and MJD32C form complementary NPN-PNP pairs. They are manufactured using Epitaxial Base technology for cost-effective performance. ■ STMicroelectronics PREFERRED SALESTYPES ■ SURFACE-MOUNTING TO-252 (DPAK) POWER PACKAGE IN TAPE & REEL (SUFFIX | STMICROELECTRONICS 意法半导体 | | ||
COMPLEMENTARY SILICON POWER TRANSISTORS DESCRIPTION The MJD31B and MJD31C and the MJD32B and MJD32C form complementary NPN-PNP pairs. They are manufactured using Epitaxial Base technology for cost-effective performance. ■ STMicroelectronics PREFERRED SALESTYPES ■ SURFACE-MOUNTING TO-252 (DPAK) POWER PACKAGE IN TAPE & REEL (SUFFIX | STMICROELECTRONICS 意法半导体 | | ||
General Purpose Amplifier Low Speed Switching Applications D-PAK for Surface Mount Applications General Purpose Amplifier Low Speed Switching Applications D-PAK for Surface Mount Applications • Load Formed for Surface Mount Application (No Suffix) • Straight Lead (I-PAK, “- I” Suffix) • Electrically Similar to Popular TIP32 and TIP32C | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | ||
Low voltage PNP power transistor DESCRIPTION The MJD31B and MJD31C and the MJD32B and MJD32C form complementary NPN-PNP pairs. They are manufactured using Epitaxial Base technology for cost-effective performance. ■ STMicroelectronics PREFERRED SALESTYPES ■ SURFACE-MOUNTING TO-252 (DPAK) POWER PACKAGE IN TAPE & REEL (SUFFIX | STMICROELECTRONICS 意法半导体 | | ||
SILICON POWER TRANSISTORS Complementary Power Transistors DPAK For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. Features • Lead Formed for Surface Mount Applications in Plastic Sleeves • Straight Lead Version in Plastic Sleeves (“1” Suffix) • Lead Formed Versi | ONSEMI 安森美半导体 | | ||
Complementary Power Transistors Features ● Lead Formed for Surface Mount Applications in Plastic Sleeves ● Pb-Free Packages are Available | KEXIN 科信电子 | | ||
TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR Description Designed for use in general purpose amplifier and switching applications. | DCCOM 道全 | | ||
PNP SURFACE MOUNT TRANSISTOR Features • BVCEO > -100V • IC = -3A high Continuous Collector Current • ICM = -5A Peak Pulse Current • Ideal for Power Switching or Amplification Applications • Complementary NPN Type: MJD31C • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. “Gree | DIODES 美台半导体 | | ||
TRANSISTOR (PNP) FEATURES ● Designed for General Purpose Amplifier and Low Speed Switching Applications ● Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) ● Straight Lead Version in Plastic Sleeves (“–1” Suffix) ● Lead Formed Version in 16 mm Tape and Reel (“T4” Suffix) ● Electrically | FS | | ||
Complementary Power Transistors Complementary Power Transistors DPAK For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. Features • Lead Formed for Surface Mount Applications in Plastic Sleeves • Straight Lead Version in Plastic Sleeves (“1” Suffix) • Lead Formed Versi | ONSEMI 安森美半导体 | | ||
Silicon PNP transistor in a TO-252 Plastic Package. Descriptions Silicon PNP transistor in a TO-252 Plastic Package. Features Low Speed ,Load Formed for Surface Mount Application. Applications General Purpose Amplifier. | FOSHAN 蓝箭电子 | | ||
Silicon PNP epitaxial planer Transistors Features • Designed for General Purpose Amplifier and Low Speed Switching Applications • Halogen Free Available Upon Request By Adding Suffix -HF • Moisture Sensitivity Level 1 • Epoxy Meets UL 94 V-0 Flammability Rating • Lead Free Finish/RoHS Compliant (P Suffix Designates RoHS Comp | MCC | | ||
TO-251-3L Plastic-Encapsulate Transistors TRANSISTOR (PNP) FEATURES • Designed for General Purpose Amplifier and Low Speed Switching Applications • Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) • Straight Lead Version in Plastic Sleeves (“–1” Suffix) • Lead Formed Version in 16 mm Tape and Reel (“T4” Suffi | JIANGSU 长电科技 | | ||
isc Silicon PNP Power Transistors DESCRIPTION • DC Current Gain -hFE = 25(Min)@ IC= -1A • Collector-Emitter Breakdown Voltage- : V(BR) CEO= -100V(Min) • Complement to Type MJD31C • DPAK for Surface Mount Applications • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • Designed | ISC 无锡固电 | | ||
Complementary Silicon Power Ttransistors DESCRIPTION It is intented for use in power amplif)ier and switching applications. | TGS | | ||
PN P Epitaxial Silicon Transistor DESCRIPTION • Designed for General Purpose Amplifier and Low Speed Switching Applications • Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) • Straight Lead Version in Plastic Sleeves (“–1” Suffix) • Lead Formed Version in 16 mm Tape and Reel (“T4” Suffix) • Electrica | SECOS 喜可士 | | ||
100 V, 3 A PNP high power bipolar transistor 1. General description PNP high power bipolar transistor in a power DPAK, TO-252 (SOT428C) Surface-Mounted Device (SMD) plastic package. NPN complement: MJD31C 2. Features and benefits • High thermal power dissipation capability • High energy efficiency due to less heat generation • Elect | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | | ||
Silicon PNP Power Transistor DESCRIPTION · Collector-Emitter Breakdown Voltage -V(BR)CEO= 100V(Min) · Collector-Emitter Saturation Voltage -VCE(sat):= -1.2V(Max) @IC= -3A ·Complement to Type MJD31C APPLICATIONS · Designed for low power audio amplifier and low-current, high-speed switching applications | ISC 无锡固电 | | ||
PNP SURFACE MOUNT TRANSISTOR Features • BVCEO > -100V • IC = -3A high Continuous Collector Current • ICM = -5A Peak Pulse Current • Ideal for Power Switching or Amplification Applications • Complementary NPN Type: MJD31C • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. “Gree | DIODES 美台半导体 | | ||
100 V, 3 A PNP high power bipolar transistor 1. General description PNP high power bipolar transistor in a power DPAK, TO-252 (SOT428C) Surface-Mounted Device (SMD) plastic package. NPN complement: MJD31CA 2. Features and benefits • High thermal power dissipation capability • High energy efficiency due to less heat generation • Elec | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | | ||
Complementary Power Transistors Complementary Power Transistors DPAK For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. Features • Lead Formed for Surface Mount Applications in Plastic Sleeves • Straight Lead Version in Plastic Sleeves (“1” Suffix) • Lead Formed Versi | ONSEMI 安森美半导体 | | ||
100V PNP HIGH VOLTAGE TRANSISTOR IN TO252 Description This Bipolar Junction Transistor (BJT) is designed to meet the stringent requirements of Automotive Applications. Features • BVCEO > -100V • IC = -3A high Continuous Collector Current • ICM = -5A Peak Pulse Current • Ideal for Power Switching or Amplification Applications • Comp | DIODES 美台半导体 | | ||
100V PNP HIGH VOLTAGE TRANSISTOR IN TO252 Description This Bipolar Junction Transistor (BJT) is designed to meet the stringent requirements of Automotive Applications. Features • BVCEO > -100V • IC = -3A high Continuous Collector Current • ICM = -5A Peak Pulse Current • Ideal for Power Switching or Amplification Applications • Comp | DIODES 美台半导体 | | ||
Complementary Power Transistors Complementary Power Transistors DPAK For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. Features • Lead Formed for Surface Mount Applications in Plastic Sleeves • Straight Lead Version in Plastic Sleeves (“1” Suffix) • Lead Formed Versi | ONSEMI 安森美半导体 | | ||
Low voltage PNP power transistor DESCRIPTION The MJD31B and MJD31C and the MJD32B and MJD32C form complementary NPN-PNP pairs. They are manufactured using Epitaxial Base technology for cost-effective performance. ■ STMicroelectronics PREFERRED SALESTYPES ■ SURFACE-MOUNTING TO-252 (DPAK) POWER PACKAGE IN TAPE & REEL (SUFFIX | STMICROELECTRONICS 意法半导体 | | ||
Low voltage PNP power transistor Description The device is manufactured in planar technology with “base island” layout. The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage. Features ■ This device is qualified for automotive application ■ Surface-mounting TO-252 power packa | STMICROELECTRONICS 意法半导体 | | ||
Complementary Power Transistors Complementary Power Transistors DPAK For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. Features • Lead Formed for Surface Mount Applications in Plastic Sleeves • Straight Lead Version in Plastic Sleeves (“1” Suffix) • Lead Formed Versi | ONSEMI 安森美半导体 | | ||
Silicon PNP epitaxial planer Transistors Features • Designed for General Purpose Amplifier and Low Speed Switching Applications • Halogen Free Available Upon Request By Adding Suffix -HF • Moisture Sensitivity Level 1 • Epoxy Meets UL 94 V-0 Flammability Rating • Lead Free Finish/RoHS Compliant (P Suffix Designates RoHS Comp | MCC | | ||
100V PNP HIGH VOLTAGE TRANSISTOR Description This Bipolar Junction Transistor (BJT) is designed to meet the stringent requirements of Automotive Applications. Features • BVCEO > -100V • IC = -3A High Continuous Collector Current • ICM = -5A Peak Pulse Current • Ideal for Power Switching or Amplification Applications • Comp | DIODES 美台半导体 | | ||
100V PNP HIGH VOLTAGE TRANSISTOR Description This Bipolar Junction Transistor (BJT) is designed to meet the stringent requirements of Automotive Applications. Features • BVCEO > -100V • IC = -3A High Continuous Collector Current • ICM = -5A Peak Pulse Current • Ideal for Power Switching or Amplification Applications • Comp | DIODES 美台半导体 | | ||
Complementary Power Transistors Complementary Power Transistors DPAK For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. Features • Lead Formed for Surface Mount Applications in Plastic Sleeves • Straight Lead Version in Plastic Sleeves (“1” Suffix) • Lead Formed Versi | ONSEMI 安森美半导体 | | ||
Complementary Power Transistors Complementary Power Transistors DPAK For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. Features • Lead Formed for Surface Mount Applications in Plastic Sleeves • Straight Lead Version in Plastic Sleeves (“1” Suffix) • Lead Formed Versi | ONSEMI 安森美半导体 | | ||
General Purpose Amplifier Low Speed Switching Applications 文件：54.75 Kbytes Page：5 Pages | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | ||
Discrete and MOSFET components, analog & logic ICs 文件：11.62183 Mbytes Page：234 Pages | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | | ||
isc Silicon PNP Power Transistors 文件：361.21 Kbytes Page：3 Pages | ISC 无锡固电 | | ||
100V PNP HIGH VOLTAGE TRANSISTOR 文件：373.13 Kbytes Page：7 Pages | DIODES 美台半导体 | | ||
Complementary Power Transistors 文件：135.34 Kbytes Page：10 Pages | ONSEMI 安森美半导体 | | ||
Complementary Power Transistors 文件：81.61 Kbytes Page：8 Pages | ONSEMI 安森美半导体 | | ||
PNP, 100V, 3A, TO252 | DIODES 美台半导体 | | ||
100V PNP HIGH VOLTAGE TRANSISTOR IN TO252 文件：314.61 Kbytes Page：7 Pages | DIODES 美台半导体 | | ||
isc Silicon PNP Power Transistors 文件：361.21 Kbytes Page：3 Pages | ISC 无锡固电 | | ||
100V PNP HIGH VOLTAGE TRANSISTOR 文件：373.13 Kbytes Page：7 Pages | DIODES 美台半导体 | | ||
Complementary Power Transistors 文件：81.61 Kbytes Page：8 Pages | ONSEMI 安森美半导体 | | ||
100V PNP HIGH VOLTAGE TRANSISTOR 文件：373.13 Kbytes Page：7 Pages | DIODES 美台半导体 | | ||
封装/外壳：TO-252-3，DPak（2 引线 + 接片），SC-63 包装：卷带（TR） 描述：TRANS PNP 100V 3A TO252-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 | DIODES 美台半导体 | | ||
Complementary Power Transistors 文件：81.61 Kbytes Page：8 Pages | ONSEMI 安森美半导体 | | ||
Discrete and MOSFET components, analog & logic ICs 文件：11.62183 Mbytes Page：234 Pages | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | | ||
封装/外壳：TO-252-3，DPak（2 引线 + 接片），SC-63 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：MJD32CA/SOT428/DPAK 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 | ETC 知名厂家 | ETC | | |
Complementary Power Transistors 文件：100.84 Kbytes Page：10 Pages | ONSEMI 安森美半导体 | | ||
Complementary Power Transistors 文件：81.61 Kbytes Page：8 Pages | ONSEMI 安森美半导体 | | ||
Complementary Power Transistors 文件：135.34 Kbytes Page：10 Pages | ONSEMI 安森美半导体 | | ||
100V PNP HIGH VOLTAGE TRANSISTOR 文件：433.13 Kbytes Page：7 Pages | DIODES 美台半导体 | | ||
100V PNP HIGH VOLTAGE TRANSISTOR IN TO252 文件：315.53 Kbytes Page：7 Pages | DIODES 美台半导体 | |
MJD32产品属性
- 类型
描述
- 型号
MJD32
- 制造商
Motorola Inc
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ON |
24+ |
SOP8 |
32350 |
深圳存库原装现货 |
|||
ST(意法半导体) |
24+ |
TO-252 |
2669 |
原厂订货渠道,支持BOM配单一站式服务 |
|||
ON/安森美 |
24+ |
NA/ |
438 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
ST |
23+ |
NA |
20000 |
全新原装假一赔十 |
|||
DIODES/美台 |
24+ |
NA |
30000 |
房间原装现货特价热卖,有单详谈 |
|||
三年内 |
1983 |
只做原装正品 |
|||||
ON/安森美 |
22+ |
TO-252 |
100000 |
代理渠道/只做原装/可含税 |
|||
CJ/长晶 |
25+ |
TO-252 |
57488 |
百分百原装现货 实单必成 欢迎询价 |
|||
ST/意法 |
24+ |
TO-252-3 |
860000 |
明嘉莱只做原装正品现货 |
|||
ON(安森美) |
24+ |
标准封装 |
8000 |
原装，正品 |
MJD32规格书下载地址
MJD32参数引脚图相关
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- MJD117(-1,T4)
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MJD32数据表相关新闻
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