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MJD32晶体管资料
MJD32别名：MJD32三极管、MJD32晶体管、MJD32晶体三极管
MJD32生产厂家：韩国三星公司
MJD32制作材料：
MJD32性质：低频或音频放大 （LF）_功率放大 （PA）
MJD32封装形式：贴片封装
MJD32极限工作电压：
MJD32最大电流允许值：3A
MJD32最大工作频率：<1MHZ或未知
MJD32引脚数：3
MJD32最大耗散功率：15W
MJD32放大倍数：
MJD32图片代号：G-217
MJD32vtest：0
MJD32htest：999900
- MJD32atest：3
MJD32wtest：15
MJD32代换 MJD32用什么型号代替：
MJD32价格
参考价格：￥0.5725
型号：MJD32C-13 品牌：Diodes 备注：这里有MJD32多少钱，2025年最近7天走势，今日出价，今日竞价，MJD32批发/采购报价，MJD32行情走势销售排行榜，MJD32报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
MJD32 | General Purpose Amplifier Low Speed Switching Applications D-PAK for Surface Mount Applications GeneralPurposeAmplifierLowSpeedSwitchingApplicationsD-PAKforSurfaceMountApplications •LoadFormedforSurfaceMountApplication(NoSuffix) •StraightLead(I-PAK,“-I”Suffix) •ElectricallySimilartoPopularTIP32andTIP32C | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 |  |   |
MJD32 | Complementary Power Transistors Features ●LeadFormedforSurfaceMountApplicationsinPlasticSleeves ●Pb-FreePackagesareAvailable | KEXINGuangdong Kexin Industrial Co.,Ltd 科信电子广东科信实业有限公司 |  | |
MJD32 | Complementary Power Transistors ComplementaryPowerTransistorsDPAKForSurfaceMountApplications Designedforgeneralpurposeamplifierandlowspeedswitchingapplications. Features •LeadFormedforSurfaceMountApplicationsinPlasticSleeves •StraightLeadVersioninPlasticSleeves(“1”Suffix) •LeadFormedVersi | ONSEMION Semiconductor 安森美半导体安森美半导体公司 |  | |
MJD32 | Complementary Power Transistors 文件：135.34 Kbytes Page：10 Pages | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | |
MJD32 | Complementary Power Transistors 文件：81.61 Kbytes Page：8 Pages | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | |
COMPLEMENTARY SILICON POWER TRANSISTORS DESCRIPTION TheMJD31BandMJD31CandtheMJD32BandMJD32CformcomplementaryNPN-PNPpairs.TheyaremanufacturedusingEpitaxialBasetechnologyforcost-effectiveperformance. ■STMicroelectronicsPREFERREDSALESTYPES ■SURFACE-MOUNTINGTO-252(DPAK)POWERPACKAGEINTAPE&REEL(SUFFIX | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 |  | | |
COMPLEMENTARY SILICON POWER TRANSISTORS DESCRIPTION TheMJD31BandMJD31CandtheMJD32BandMJD32CformcomplementaryNPN-PNPpairs.TheyaremanufacturedusingEpitaxialBasetechnologyforcost-effectiveperformance. ■STMicroelectronicsPREFERREDSALESTYPES ■SURFACE-MOUNTINGTO-252(DPAK)POWERPACKAGEINTAPE&REEL(SUFFIX | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
General Purpose Amplifier Low Speed Switching Applications D-PAK for Surface Mount Applications GeneralPurposeAmplifierLowSpeedSwitchingApplicationsD-PAKforSurfaceMountApplications •LoadFormedforSurfaceMountApplication(NoSuffix) •StraightLead(I-PAK,“-I”Suffix) •ElectricallySimilartoPopularTIP32andTIP32C | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | | |
Low voltage PNP power transistor DESCRIPTION TheMJD31BandMJD31CandtheMJD32BandMJD32CformcomplementaryNPN-PNPpairs.TheyaremanufacturedusingEpitaxialBasetechnologyforcost-effectiveperformance. ■STMicroelectronicsPREFERREDSALESTYPES ■SURFACE-MOUNTINGTO-252(DPAK)POWERPACKAGEINTAPE&REEL(SUFFIX | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
SILICON POWER TRANSISTORS ComplementaryPowerTransistorsDPAKForSurfaceMountApplications Designedforgeneralpurposeamplifierandlowspeedswitchingapplications. Features •LeadFormedforSurfaceMountApplicationsinPlasticSleeves •StraightLeadVersioninPlasticSleeves(“1”Suffix) •LeadFormedVersi | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
Complementary Power Transistors Features ●LeadFormedforSurfaceMountApplicationsinPlasticSleeves ●Pb-FreePackagesareAvailable | KEXINGuangdong Kexin Industrial Co.,Ltd 科信电子广东科信实业有限公司 | | | |
TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR Description Designedforuseingeneralpurposeamplifierandswitchingapplications. | DCCOM Dc Components |  | | |
PNP SURFACE MOUNT TRANSISTOR Features •BVCEO>-100V •IC=-3AhighContinuousCollectorCurrent •ICM=-5APeakPulseCurrent •IdealforPowerSwitchingorAmplificationApplications •ComplementaryNPNType:MJD31C •TotallyLead-Free&FullyRoHSCompliant(Notes1&2) •HalogenandAntimonyFree.“Gree | DIODESDiodes Incorporated 美台半导体 |  | | |
TRANSISTOR (PNP) FEATURES ●DesignedforGeneralPurposeAmplifierandLowSpeedSwitchingApplications ●LeadFormedforSurfaceMountApplicationsinPlasticSleeves(NoSuffix) ●StraightLeadVersioninPlasticSleeves(“–1”Suffix) ●LeadFormedVersionin16mmTapeandReel(“T4”Suffix) ●Electrically | FS First Silicon Co., Ltd |  | | |
Complementary Power Transistors ComplementaryPowerTransistorsDPAKForSurfaceMountApplications Designedforgeneralpurposeamplifierandlowspeedswitchingapplications. Features •LeadFormedforSurfaceMountApplicationsinPlasticSleeves •StraightLeadVersioninPlasticSleeves(“1”Suffix) •LeadFormedVersi | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
Silicon PNP transistor in a TO-252 Plastic Package. Descriptions SiliconPNPtransistorinaTO-252PlasticPackage. Features LowSpeed,LoadFormedforSurfaceMountApplication. Applications GeneralPurposeAmplifier. | FOSHANFoshan Blue Rocket Electronics Co.,Ltd. 蓝箭电子佛山市蓝箭电子股份有限公司 |  | | |
Silicon PNP epitaxial planer Transistors Features •DesignedforGeneralPurposeAmplifierandLowSpeed SwitchingApplications •HalogenFreeAvailableUponRequestByAddingSuffix-HF •MoistureSensitivityLevel1 •EpoxyMeetsUL94V-0FlammabilityRating •LeadFreeFinish/RoHSCompliant(PSuffixDesignatesRoHS Comp | MCCMicro Commercial Components 美微科美微科半导体股份有限公司 |  | | |
TO-251-3L Plastic-Encapsulate Transistors TRANSISTOR(PNP) FEATURES •DesignedforGeneralPurposeAmplifierandLowSpeedSwitchingApplications •LeadFormedforSurfaceMountApplicationsinPlasticSleeves(NoSuffix) •StraightLeadVersioninPlasticSleeves(“–1”Suffix) •LeadFormedVersionin16mmTapeandReel(“T4”Suffi | JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd 长电科技江苏长电科技股份有限公司 |  | | |
isc Silicon PNP Power Transistors DESCRIPTION •DCCurrentGain-hFE=25(Min)@IC=-1A •Collector-EmitterBreakdownVoltage-:V(BR)CEO=-100V(Min) •ComplementtoTypeMJD31C •DPAKforSurfaceMountApplications •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation APPLICATIONS •Designed | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |  | | |
Complementary Silicon Power Ttransistors DESCRIPTION Itisintentedforuseinpoweramplif)ierandswitchingapplications. | TGS Tiger Electronic Co.,Ltd |  | | |
PN P Epitaxial Silicon Transistor DESCRIPTION •DesignedforGeneralPurposeAmplifierandLowSpeedSwitchingApplications •LeadFormedforSurfaceMountApplicationsinPlasticSleeves(NoSuffix) •StraightLeadVersioninPlasticSleeves(“–1”Suffix) •LeadFormedVersionin16mmTapeandReel(“T4”Suffix) •Electrica | SECOSSeCoS Halbleitertechnologie GmbH 喜可士喜可士股份有限公司 |  | | |
100 V, 3 A PNP high power bipolar transistor 1.Generaldescription PNPhighpowerbipolartransistorinapowerDPAK,TO-252(SOT428C)Surface-MountedDevice (SMD)plasticpackage. NPNcomplement:MJD31C 2.Featuresandbenefits •Highthermalpowerdissipationcapability •Highenergyefficiencyduetolessheatgeneration •Elect | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 |  | | |
Silicon PNP Power Transistor DESCRIPTION ·Collector-EmitterBreakdownVoltage -V(BR)CEO=100V(Min) ·Collector-EmitterSaturationVoltage -VCE(sat):=-1.2V(Max)@IC=-3A ·ComplementtoTypeMJD31C APPLICATIONS ·Designedforlowpoweraudioamplifierandlow-current, high-speedswitchingapplications | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
PNP SURFACE MOUNT TRANSISTOR Features •BVCEO>-100V •IC=-3AhighContinuousCollectorCurrent •ICM=-5APeakPulseCurrent •IdealforPowerSwitchingorAmplificationApplications •ComplementaryNPNType:MJD31C •TotallyLead-Free&FullyRoHSCompliant(Notes1&2) •HalogenandAntimonyFree.“Gree | DIODESDiodes Incorporated 美台半导体 | | | |
100 V, 3 A PNP high power bipolar transistor 1.Generaldescription PNPhighpowerbipolartransistorinapowerDPAK,TO-252(SOT428C)Surface-MountedDevice (SMD)plasticpackage. NPNcomplement:MJD31CA 2.Featuresandbenefits •Highthermalpowerdissipationcapability •Highenergyefficiencyduetolessheatgeneration •Elec | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | | | |
Complementary Power Transistors ComplementaryPowerTransistorsDPAKForSurfaceMountApplications Designedforgeneralpurposeamplifierandlowspeedswitchingapplications. Features •LeadFormedforSurfaceMountApplicationsinPlasticSleeves •StraightLeadVersioninPlasticSleeves(“1”Suffix) •LeadFormedVersi | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
100V PNP HIGH VOLTAGE TRANSISTOR IN TO252 Description ThisBipolarJunctionTransistor(BJT)isdesignedtomeetthestringentrequirementsofAutomotiveApplications. Features •BVCEO>-100V •IC=-3AhighContinuousCollectorCurrent •ICM=-5APeakPulseCurrent •IdealforPowerSwitchingorAmplificationApplications •Comp | DIODESDiodes Incorporated 美台半导体 | | | |
100V PNP HIGH VOLTAGE TRANSISTOR IN TO252 Description ThisBipolarJunctionTransistor(BJT)isdesignedtomeetthestringentrequirementsofAutomotiveApplications. Features •BVCEO>-100V •IC=-3AhighContinuousCollectorCurrent •ICM=-5APeakPulseCurrent •IdealforPowerSwitchingorAmplificationApplications •Comp | DIODESDiodes Incorporated 美台半导体 | | | |
Complementary Power Transistors ComplementaryPowerTransistorsDPAKForSurfaceMountApplications Designedforgeneralpurposeamplifierandlowspeedswitchingapplications. Features •LeadFormedforSurfaceMountApplicationsinPlasticSleeves •StraightLeadVersioninPlasticSleeves(“1”Suffix) •LeadFormedVersi | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
Low voltage PNP power transistor DESCRIPTION TheMJD31BandMJD31CandtheMJD32BandMJD32CformcomplementaryNPN-PNPpairs.TheyaremanufacturedusingEpitaxialBasetechnologyforcost-effectiveperformance. ■STMicroelectronicsPREFERREDSALESTYPES ■SURFACE-MOUNTINGTO-252(DPAK)POWERPACKAGEINTAPE&REEL(SUFFIX | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
Low voltage PNP power transistor Description Thedeviceismanufacturedinplanartechnologywith“baseisland”layout.Theresultingtransistorshowsexceptionalhighgainperformancecoupledwithverylowsaturationvoltage. Features ■Thisdeviceisqualifiedforautomotiveapplication ■Surface-mountingTO-252powerpacka | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
Complementary Power Transistors ComplementaryPowerTransistorsDPAKForSurfaceMountApplications Designedforgeneralpurposeamplifierandlowspeedswitchingapplications. Features •LeadFormedforSurfaceMountApplicationsinPlasticSleeves •StraightLeadVersioninPlasticSleeves(“1”Suffix) •LeadFormedVersi | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
Silicon PNP epitaxial planer Transistors Features •DesignedforGeneralPurposeAmplifierandLowSpeed SwitchingApplications •HalogenFreeAvailableUponRequestByAddingSuffix-HF •MoistureSensitivityLevel1 •EpoxyMeetsUL94V-0FlammabilityRating •LeadFreeFinish/RoHSCompliant(PSuffixDesignatesRoHS Comp | MCCMicro Commercial Components 美微科美微科半导体股份有限公司 | | | |
100V PNP HIGH VOLTAGE TRANSISTOR Description ThisBipolarJunctionTransistor(BJT)isdesignedtomeetthestringentrequirementsofAutomotiveApplications. Features •BVCEO>-100V •IC=-3AHighContinuousCollectorCurrent •ICM=-5APeakPulseCurrent •IdealforPowerSwitchingorAmplificationApplications •Comp | DIODESDiodes Incorporated 美台半导体 | | | |
100V PNP HIGH VOLTAGE TRANSISTOR Description ThisBipolarJunctionTransistor(BJT)isdesignedtomeetthestringentrequirementsofAutomotiveApplications. Features •BVCEO>-100V •IC=-3AHighContinuousCollectorCurrent •ICM=-5APeakPulseCurrent •IdealforPowerSwitchingorAmplificationApplications •Comp | DIODESDiodes Incorporated 美台半导体 | | | |
Complementary Power Transistors ComplementaryPowerTransistorsDPAKForSurfaceMountApplications Designedforgeneralpurposeamplifierandlowspeedswitchingapplications. Features •LeadFormedforSurfaceMountApplicationsinPlasticSleeves •StraightLeadVersioninPlasticSleeves(“1”Suffix) •LeadFormedVersi | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
Complementary Power Transistors ComplementaryPowerTransistorsDPAKForSurfaceMountApplications Designedforgeneralpurposeamplifierandlowspeedswitchingapplications. Features •LeadFormedforSurfaceMountApplicationsinPlasticSleeves •StraightLeadVersioninPlasticSleeves(“1”Suffix) •LeadFormedVersi | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
General Purpose Amplifier Low Speed Switching Applications 文件：54.75 Kbytes Page：5 Pages | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | | |
isc Silicon PNP Power Transistors 文件：361.21 Kbytes Page：3 Pages | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
100V PNP HIGH VOLTAGE TRANSISTOR 文件：373.13 Kbytes Page：7 Pages | DIODESDiodes Incorporated 美台半导体 | | | |
Complementary Power Transistors 文件：135.34 Kbytes Page：10 Pages | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
Complementary Power Transistors 文件：81.61 Kbytes Page：8 Pages | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
100V PNP HIGH VOLTAGE TRANSISTOR IN TO252 文件：314.61 Kbytes Page：7 Pages | DIODESDiodes Incorporated 美台半导体 | | | |
isc Silicon PNP Power Transistors 文件：361.21 Kbytes Page：3 Pages | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
100V PNP HIGH VOLTAGE TRANSISTOR 文件：373.13 Kbytes Page：7 Pages | DIODESDiodes Incorporated 美台半导体 | | | |
Complementary Power Transistors 文件：81.61 Kbytes Page：8 Pages | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
100V PNP HIGH VOLTAGE TRANSISTOR 文件：373.13 Kbytes Page：7 Pages | DIODESDiodes Incorporated 美台半导体 | | | |
封装/外壳：TO-252-3，DPak（2 引线 + 接片），SC-63 包装：卷带（TR） 描述：TRANS PNP 100V 3A TO252-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 | PAMDiodes Incorporated 龙鼎微龙鼎微电子（上海）有限公司 |  | | |
Complementary Power Transistors 文件：81.61 Kbytes Page：8 Pages | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
封装/外壳：TO-252-3，DPak（2 引线 + 接片），SC-63 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：MJD32CA/SOT428/DPAK 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 | ETC 知名厂家 | ETC | | |
Complementary Power Transistors 文件：100.84 Kbytes Page：10 Pages | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
Complementary Power Transistors 文件：81.61 Kbytes Page：8 Pages | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
Complementary Power Transistors 文件：135.34 Kbytes Page：10 Pages | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
100V PNP HIGH VOLTAGE TRANSISTOR 文件：433.13 Kbytes Page：7 Pages | DIODESDiodes Incorporated 美台半导体 | | | |
100V PNP HIGH VOLTAGE TRANSISTOR IN TO252 文件：315.53 Kbytes Page：7 Pages | DIODESDiodes Incorporated 美台半导体 | | | |
100V PNP HIGH VOLTAGE TRANSISTOR 文件：433.13 Kbytes Page：7 Pages | DIODESDiodes Incorporated 美台半导体 | | | |
100V PNP HIGH VOLTAGE TRANSISTOR 文件：433.13 Kbytes Page：7 Pages | DIODESDiodes Incorporated 美台半导体 | | | |
Complementary Power Transistors 文件：81.61 Kbytes Page：8 Pages | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
Complementary Power Transistors 文件：81.61 Kbytes Page：8 Pages | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
Complementary Power Transistors 文件：135.34 Kbytes Page：10 Pages | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | |
MJD32产品属性
- 类型
描述
- 型号
MJD32
- 制造商
Motorola Inc
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ONSEMI/安森美 |
25+ |
TO-252 |
45000 |
ONSEMI/安森美全新现货MJD32CG即刻询购立享优惠#长期有排单订 |
|||
ON/安森美 |
22+ |
TO-252 |
100000 |
代理渠道/只做原装/可含税 |
|||
ON/安森美 |
24+ |
NA/ |
438 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
CJ/长晶 |
25+ |
TO-252 |
57488 |
百分百原装现货 实单必成 欢迎询价 |
|||
ON(安森美) |
24+ |
标准封装 |
8000 |
原装，正品 |
|||
ST/意法 |
24+ |
TO-252-3 |
860000 |
明嘉莱只做原装正品现货 |
|||
ON |
10+ |
TO-252 |
2350 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
ON/安森美 |
24+ |
DPAK-3 |
27 |
原装柜台现货特价热卖 |
|||
CJ/长电科技 |
23+ |
TO-252 |
9000 |
十七年VIP会员,诚信经营，一手货源，原装正品可零售！ |
|||
ONSEMI/安森美 |
22+ |
TO-252 |
15500 |
原装正品支持实单 |
MJD32芯片相关品牌
MJD32规格书下载地址
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