位置：首页 > IC中文资料第3638页 > MJD32
MJD32晶体管资料
MJD32别名：MJD32三极管、MJD32晶体管、MJD32晶体三极管
MJD32生产厂家：韩国三星公司
MJD32制作材料：
MJD32性质：低频或音频放大 （LF）_功率放大 （PA）
MJD32封装形式：贴片封装
MJD32极限工作电压：
MJD32最大电流允许值：3A
MJD32最大工作频率：<1MHZ或未知
MJD32引脚数：3
MJD32最大耗散功率：15W
MJD32放大倍数：
MJD32图片代号：G-217
MJD32vtest：0
MJD32htest：999900
- MJD32atest：3
MJD32wtest：15
MJD32代换 MJD32用什么型号代替：
MJD32价格
参考价格：￥0.5725
型号：MJD32C-13 品牌：Diodes 备注：这里有MJD32多少钱，2024年最近7天走势，今日出价，今日竞价，MJD32批发/采购报价，MJD32行情走势销售排行榜，MJD32报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
MJD32 | General Purpose Amplifier Low Speed Switching Applications D-PAK for Surface Mount Applications GeneralPurposeAmplifierLowSpeedSwitchingApplicationsD-PAKforSurfaceMountApplications •LoadFormedforSurfaceMountApplication(NoSuffix) •StraightLead(I-PAK,“-I”Suffix) •ElectricallySimilartoPopularTIP32andTIP32C | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 |  |   |
MJD32 | Complementary Power Transistors Features ●LeadFormedforSurfaceMountApplicationsinPlasticSleeves ●Pb-FreePackagesareAvailable | KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD 科信电子广东科信实业有限公司 |  | |
MJD32 | Complementary Power Transistors ComplementaryPowerTransistorsDPAKForSurfaceMountApplications Designedforgeneralpurposeamplifierandlowspeedswitchingapplications. Features •LeadFormedforSurfaceMountApplicationsinPlasticSleeves •StraightLeadVersioninPlasticSleeves(“1”Suffix) •LeadFormedVersi | ONSEMION Semiconductor 安森美半导体安森美半导体公司 |  | |
MJD32 | Complementary Power Transistors 文件：135.34 Kbytes Page：10 Pages | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | |
MJD32 | Complementary Power Transistors 文件：81.61 Kbytes Page：8 Pages | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | |
COMPLEMENTARY SILICON POWER TRANSISTORS DESCRIPTION TheMJD31BandMJD31CandtheMJD32BandMJD32CformcomplementaryNPN-PNPpairs.TheyaremanufacturedusingEpitaxialBasetechnologyforcost-effectiveperformance. ■STMicroelectronicsPREFERREDSALESTYPES ■SURFACE-MOUNTINGTO-252(DPAK)POWERPACKAGEINTAPE&REEL(SUFFIX | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 |  | | |
COMPLEMENTARY SILICON POWER TRANSISTORS DESCRIPTION TheMJD31BandMJD31CandtheMJD32BandMJD32CformcomplementaryNPN-PNPpairs.TheyaremanufacturedusingEpitaxialBasetechnologyforcost-effectiveperformance. ■STMicroelectronicsPREFERREDSALESTYPES ■SURFACE-MOUNTINGTO-252(DPAK)POWERPACKAGEINTAPE&REEL(SUFFIX | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
General Purpose Amplifier Low Speed Switching Applications D-PAK for Surface Mount Applications GeneralPurposeAmplifierLowSpeedSwitchingApplicationsD-PAKforSurfaceMountApplications •LoadFormedforSurfaceMountApplication(NoSuffix) •StraightLead(I-PAK,“-I”Suffix) •ElectricallySimilartoPopularTIP32andTIP32C | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | | |
Low voltage PNP power transistor DESCRIPTION TheMJD31BandMJD31CandtheMJD32BandMJD32CformcomplementaryNPN-PNPpairs.TheyaremanufacturedusingEpitaxialBasetechnologyforcost-effectiveperformance. ■STMicroelectronicsPREFERREDSALESTYPES ■SURFACE-MOUNTINGTO-252(DPAK)POWERPACKAGEINTAPE&REEL(SUFFIX | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
SILICON POWER TRANSISTORS ComplementaryPowerTransistorsDPAKForSurfaceMountApplications Designedforgeneralpurposeamplifierandlowspeedswitchingapplications. Features •LeadFormedforSurfaceMountApplicationsinPlasticSleeves •StraightLeadVersioninPlasticSleeves(“1”Suffix) •LeadFormedVersi | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
Complementary Power Transistors Features ●LeadFormedforSurfaceMountApplicationsinPlasticSleeves ●Pb-FreePackagesareAvailable | KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD 科信电子广东科信实业有限公司 | | | |
TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR Description Designedforuseingeneralpurposeamplifierandswitchingapplications. | DCCOMDc Components 直流元件直流元件有限公司 |  | | |
PNP SURFACE MOUNT TRANSISTOR Features •BVCEO>-100V •IC=-3AhighContinuousCollectorCurrent •ICM=-5APeakPulseCurrent •IdealforPowerSwitchingorAmplificationApplications •ComplementaryNPNType:MJD31C •TotallyLead-Free&FullyRoHSCompliant(Notes1&2) •HalogenandAntimonyFree.“Gree | DIODESDiodes Incorporated 达尔科技 |  | | |
TRANSISTOR (PNP) FEATURES ●DesignedforGeneralPurposeAmplifierandLowSpeedSwitchingApplications ●LeadFormedforSurfaceMountApplicationsinPlasticSleeves(NoSuffix) ●StraightLeadVersioninPlasticSleeves(“–1”Suffix) ●LeadFormedVersionin16mmTapeandReel(“T4”Suffix) ●Electrically | FS First Silicon Co., Ltd |  | | |
Complementary Power Transistors ComplementaryPowerTransistorsDPAKForSurfaceMountApplications Designedforgeneralpurposeamplifierandlowspeedswitchingapplications. Features •LeadFormedforSurfaceMountApplicationsinPlasticSleeves •StraightLeadVersioninPlasticSleeves(“1”Suffix) •LeadFormedVersi | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
Silicon PNP transistor in a TO-252 Plastic Package. Descriptions SiliconPNPtransistorinaTO-252PlasticPackage. Features LowSpeed,LoadFormedforSurfaceMountApplication. Applications GeneralPurposeAmplifier. | FOSHANFoshan Blue Rocket Electronics Co.,Ltd. 蓝箭电子佛山市蓝箭电子股份有限公司 |  | | |
Silicon PNP epitaxial planer Transistors Features •DesignedforGeneralPurposeAmplifierandLowSpeed SwitchingApplications •HalogenFreeAvailableUponRequestByAddingSuffix-HF •MoistureSensitivityLevel1 •EpoxyMeetsUL94V-0FlammabilityRating •LeadFreeFinish/RoHSCompliant(PSuffixDesignatesRoHS Comp | MCCMicro Commercial Components 美微科美微科半导体公司 |  | | |
TO-251-3L Plastic-Encapsulate Transistors TRANSISTOR(PNP) FEATURES •DesignedforGeneralPurposeAmplifierandLowSpeedSwitchingApplications •LeadFormedforSurfaceMountApplicationsinPlasticSleeves(NoSuffix) •StraightLeadVersioninPlasticSleeves(“–1”Suffix) •LeadFormedVersionin16mmTapeandReel(“T4”Suffi | JIANGSU Jiangsu Changjiang Electronics Technology Co., Ltd |  | | |
isc Silicon PNP Power Transistors DESCRIPTION •DCCurrentGain-hFE=25(Min)@IC=-1A •Collector-EmitterBreakdownVoltage-:V(BR)CEO=-100V(Min) •ComplementtoTypeMJD31C •DPAKforSurfaceMountApplications •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation APPLICATIONS •Designed | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |  | | |
Complementary Silicon Power Ttransistors DESCRIPTION Itisintentedforuseinpoweramplif)ierandswitchingapplications. | TGS Tiger Electronic Co.,Ltd |  | | |
PN P Epitaxial Silicon Transistor DESCRIPTION •DesignedforGeneralPurposeAmplifierandLowSpeedSwitchingApplications •LeadFormedforSurfaceMountApplicationsinPlasticSleeves(NoSuffix) •StraightLeadVersioninPlasticSleeves(“–1”Suffix) •LeadFormedVersionin16mmTapeandReel(“T4”Suffix) •Electrica | SECOS SeCoS Halbleitertechnologie GmbH |  | | |
100 V, 3 A PNP high power bipolar transistor 1.Generaldescription PNPhighpowerbipolartransistorinapowerDPAK,TO-252(SOT428C)Surface-MountedDevice (SMD)plasticpackage. NPNcomplement:MJD31C 2.Featuresandbenefits •Highthermalpowerdissipationcapability •Highenergyefficiencyduetolessheatgeneration •Elect | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 |  | | |
PNP SURFACE MOUNT TRANSISTOR Features •BVCEO>-100V •IC=-3AhighContinuousCollectorCurrent •ICM=-5APeakPulseCurrent •IdealforPowerSwitchingorAmplificationApplications •ComplementaryNPNType:MJD31C •TotallyLead-Free&FullyRoHSCompliant(Notes1&2) •HalogenandAntimonyFree.“Gree | DIODESDiodes Incorporated 达尔科技 | | | |
100 V, 3 A PNP high power bipolar transistor 1.Generaldescription PNPhighpowerbipolartransistorinapowerDPAK,TO-252(SOT428C)Surface-MountedDevice (SMD)plasticpackage. NPNcomplement:MJD31CA 2.Featuresandbenefits •Highthermalpowerdissipationcapability •Highenergyefficiencyduetolessheatgeneration •Elec | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | | | |
Complementary Power Transistors ComplementaryPowerTransistorsDPAKForSurfaceMountApplications Designedforgeneralpurposeamplifierandlowspeedswitchingapplications. Features •LeadFormedforSurfaceMountApplicationsinPlasticSleeves •StraightLeadVersioninPlasticSleeves(“1”Suffix) •LeadFormedVersi | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
100V PNP HIGH VOLTAGE TRANSISTOR IN TO252 Description ThisBipolarJunctionTransistor(BJT)isdesignedtomeetthestringentrequirementsofAutomotiveApplications. Features •BVCEO>-100V •IC=-3AhighContinuousCollectorCurrent •ICM=-5APeakPulseCurrent •IdealforPowerSwitchingorAmplificationApplications •Comp | DIODESDiodes Incorporated 达尔科技 | | | |
100V PNP HIGH VOLTAGE TRANSISTOR IN TO252 Description ThisBipolarJunctionTransistor(BJT)isdesignedtomeetthestringentrequirementsofAutomotiveApplications. Features •BVCEO>-100V •IC=-3AhighContinuousCollectorCurrent •ICM=-5APeakPulseCurrent •IdealforPowerSwitchingorAmplificationApplications •Comp | DIODESDiodes Incorporated 达尔科技 | | | |
Complementary Power Transistors ComplementaryPowerTransistorsDPAKForSurfaceMountApplications Designedforgeneralpurposeamplifierandlowspeedswitchingapplications. Features •LeadFormedforSurfaceMountApplicationsinPlasticSleeves •StraightLeadVersioninPlasticSleeves(“1”Suffix) •LeadFormedVersi | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
Low voltage PNP power transistor DESCRIPTION TheMJD31BandMJD31CandtheMJD32BandMJD32CformcomplementaryNPN-PNPpairs.TheyaremanufacturedusingEpitaxialBasetechnologyforcost-effectiveperformance. ■STMicroelectronicsPREFERREDSALESTYPES ■SURFACE-MOUNTINGTO-252(DPAK)POWERPACKAGEINTAPE&REEL(SUFFIX | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
Low voltage PNP power transistor Description Thedeviceismanufacturedinplanartechnologywith“baseisland”layout.Theresultingtransistorshowsexceptionalhighgainperformancecoupledwithverylowsaturationvoltage. Features ■Thisdeviceisqualifiedforautomotiveapplication ■Surface-mountingTO-252powerpacka | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
Complementary Power Transistors ComplementaryPowerTransistorsDPAKForSurfaceMountApplications Designedforgeneralpurposeamplifierandlowspeedswitchingapplications. Features •LeadFormedforSurfaceMountApplicationsinPlasticSleeves •StraightLeadVersioninPlasticSleeves(“1”Suffix) •LeadFormedVersi | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
Silicon PNP epitaxial planer Transistors Features •DesignedforGeneralPurposeAmplifierandLowSpeed SwitchingApplications •HalogenFreeAvailableUponRequestByAddingSuffix-HF •MoistureSensitivityLevel1 •EpoxyMeetsUL94V-0FlammabilityRating •LeadFreeFinish/RoHSCompliant(PSuffixDesignatesRoHS Comp | MCCMicro Commercial Components 美微科美微科半导体公司 | | | |
100V PNP HIGH VOLTAGE TRANSISTOR Description ThisBipolarJunctionTransistor(BJT)isdesignedtomeetthestringentrequirementsofAutomotiveApplications. Features •BVCEO>-100V •IC=-3AHighContinuousCollectorCurrent •ICM=-5APeakPulseCurrent •IdealforPowerSwitchingorAmplificationApplications •Comp | DIODESDiodes Incorporated 达尔科技 | | | |
100V PNP HIGH VOLTAGE TRANSISTOR Description ThisBipolarJunctionTransistor(BJT)isdesignedtomeetthestringentrequirementsofAutomotiveApplications. Features •BVCEO>-100V •IC=-3AHighContinuousCollectorCurrent •ICM=-5APeakPulseCurrent •IdealforPowerSwitchingorAmplificationApplications •Comp | DIODESDiodes Incorporated 达尔科技 | | | |
Complementary Power Transistors ComplementaryPowerTransistorsDPAKForSurfaceMountApplications Designedforgeneralpurposeamplifierandlowspeedswitchingapplications. Features •LeadFormedforSurfaceMountApplicationsinPlasticSleeves •StraightLeadVersioninPlasticSleeves(“1”Suffix) •LeadFormedVersi | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
Complementary Power Transistors ComplementaryPowerTransistorsDPAKForSurfaceMountApplications Designedforgeneralpurposeamplifierandlowspeedswitchingapplications. Features •LeadFormedforSurfaceMountApplicationsinPlasticSleeves •StraightLeadVersioninPlasticSleeves(“1”Suffix) •LeadFormedVersi | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
General Purpose Amplifier Low Speed Switching Applications 文件：54.75 Kbytes Page：5 Pages | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | | |
isc Silicon PNP Power Transistors 文件：361.21 Kbytes Page：3 Pages | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
100V PNP HIGH VOLTAGE TRANSISTOR 文件：373.13 Kbytes Page：7 Pages | DIODESDiodes Incorporated 达尔科技 | | | |
Complementary Power Transistors 文件：135.34 Kbytes Page：10 Pages | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
Complementary Power Transistors 文件：81.61 Kbytes Page：8 Pages | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
100V PNP HIGH VOLTAGE TRANSISTOR IN TO252 文件：314.61 Kbytes Page：7 Pages | DIODESDiodes Incorporated 达尔科技 | | | |
isc Silicon PNP Power Transistors 文件：361.21 Kbytes Page：3 Pages | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
100V PNP HIGH VOLTAGE TRANSISTOR 文件：373.13 Kbytes Page：7 Pages | DIODESDiodes Incorporated 达尔科技 | | | |
Complementary Power Transistors 文件：81.61 Kbytes Page：8 Pages | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
100V PNP HIGH VOLTAGE TRANSISTOR 文件：373.13 Kbytes Page：7 Pages | DIODESDiodes Incorporated 达尔科技 | | | |
封装/外壳：TO-252-3，DPak（2 引线 + 接片），SC-63 包装：卷带（TR） 描述：TRANS PNP 100V 3A TO252-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 | PAMDiodes Incorporated 龙鼎威 |  | | |
Complementary Power Transistors 文件：81.61 Kbytes Page：8 Pages | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
封装/外壳：TO-252-3，DPak（2 引线 + 接片），SC-63 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：MJD32CA/SOT428/DPAK 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | | | |
Complementary Power Transistors 文件：100.84 Kbytes Page：10 Pages | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
Complementary Power Transistors 文件：81.61 Kbytes Page：8 Pages | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
Complementary Power Transistors 文件：135.34 Kbytes Page：10 Pages | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
100V PNP HIGH VOLTAGE TRANSISTOR 文件：433.13 Kbytes Page：7 Pages | DIODESDiodes Incorporated 达尔科技 | | | |
100V PNP HIGH VOLTAGE TRANSISTOR IN TO252 文件：315.53 Kbytes Page：7 Pages | DIODESDiodes Incorporated 达尔科技 | | | |
100V PNP HIGH VOLTAGE TRANSISTOR 文件：433.13 Kbytes Page：7 Pages | DIODESDiodes Incorporated 达尔科技 | | | |
100V PNP HIGH VOLTAGE TRANSISTOR 文件：433.13 Kbytes Page：7 Pages | DIODESDiodes Incorporated 达尔科技 | | | |
Complementary Power Transistors 文件：81.61 Kbytes Page：8 Pages | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
Complementary Power Transistors 文件：81.61 Kbytes Page：8 Pages | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
Complementary Power Transistors 文件：135.34 Kbytes Page：10 Pages | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
Complementary Power Transistors 文件：100.84 Kbytes Page：10 Pages | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | |
MJD32产品属性
- 类型
描述
- 型号
MJD32
- 制造商
Motorola Inc
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ON/安森美 |
TO252 |
7906200 |
|||||
ON/安森美 |
21+ |
DPAK-3 |
20000 |
只做原装,质量保证 |
|||
FAIRCHILD/仙童 |
2019+全新原装正品 |
TO252 |
8950 |
BOM配单专家,发货快,价格低 |
|||
ON(安森美) |
23+ |
贴片三极管 MJD32C |
7987000 |
||||
ON/安森美 |
23+ |
TO252 |
13816 |
正规渠道,免费送样。支持账期,BOM一站式配齐 |
|||
CJ/长电 |
2122+ |
TO-252 |
11980 |
只做原装进口正品,假一赔十,价格优势 |
|||
ST/意法 |
24+ |
TO-252-3 |
860000 |
明嘉莱只做原装正品现货 |
|||
CJ/长电 |
22+ |
TO-252 |
75000 |
郑重承诺只做原装进口现货 |
|||
FAIRCHILD/仙童 |
19+/20+ |
- |
8000 |
||||
ON/安森美 |
2105+ |
TO-252 |
10053 |
MJD32芯片相关品牌
MJD32规格书下载地址
MJD32参数引脚图相关
- nrf24l01
- nfc芯片
- NFC
- ne555定时器
- ne555
- nand闪存
- n74
- n100
- mxt
- murata
- mt7201
- mt6795
- msm8625q
- msm7227a
- MP4
- MP3
- mos晶体管
- mos管
- MOSFET
- molex连接器
- MJE1100
- MJE1093
- MJE1092
- MJE1091
- MJE1090
- MJE105K
- MJE105
- MJE104
- MJE103
- MJE102
- MJE101
- MJD6039(-1,T4)
- MJD6036(-1,T4)
- MJD55H11
- MJD50
- MJD47-1
- MJD47
- MJD44H11
- MJD44E3
- MJD44
- MJD42CG
- MJD42C1
- MJD42C
- MJD42
- MJD41C
- MJD350G
- MJD350
- MJD340G
- MJD340
- MJD32T4
- MJD32RL
- MJD32CQ
- MJD32CG
- MJD32C1
- MJD32C
- MJD32B
- MJD31T4
- MJD31CQ
- MJD31CG
- MJD31C1
- MJD31C
- MJD31B
- MJD31
- MJD30C
- MJD3055
- MJD30
- MJD29C
- MJD2955
- MJD29
- MJD253
- MJD243G
- MJD243
- MJD210G
- MJD210
- MJD200G
- MJD200
- MJD148
- MJD128
- MJD127(-1,T4)
- MJD127
- MJD122(-1,T4)
- MJD122
- MJD117(-1,T4)
- MJD117
- MJD112(-1,T4)
- MJD112
- MJ921
- MJ920
- MJ901
- MJ9000
MJD32数据表相关新闻
MJD45H11J 双极晶体管 - 双极结型晶体管(BJT)
MJD45H11J双极晶体管-双极结型晶体管(BJT)MJD45H11/SOT428/DPAK
2023-4-25MJD44H11RLG 双极晶体管 - 双极结型晶体管(BJT) 8A 80V 20W NPN 进口原装正品
MJD44H11RLG
2022-6-13MJD32CT4G
MJD32CT4G，全新.当天发货或门市自取，如需了解更多产品信息联系我们.零七五五.八二七三二二九一企鹅:一一七四零五二三五三，V:八七六八零五五八.
2021-7-1MJD127T4 ON原厂授权经销商
进口原装，国产代理，海量库存，产品齐全，货源渠道百分百正品
2020-6-18MJ11016
MJ11016，全新原装当天发货或门市自取0755-82732291.
2019-12-13mjd31ct4g亚太地区代理商，绝对优势！！
深圳市拓亿芯电子正品销售mjd31ct4g
2019-11-1
DdatasheetPDF页码索引
- P1
- P2
- P3
- P4
- P5
- P6
- P7
- P8
- P9
- P10
- P11
- P12
- P13
- P14
- P15
- P16
- P17
- P18
- P19
- P20
- P21
- P22
- P23
- P24
- P25
- P26
- P27
- P28
- P29
- P30
- P31
- P32
- P33
- P34
- P35
- P36
- P37
- P38
- P39
- P40
- P41
- P42
- P43
- P44
- P45
- P46
- P47
- P48
- P49
- P50
- P51
- P52
- P53
- P54
- P55
- P56
- P57
- P58
- P59
- P60
- P61
- P62
- P63
- P64
- P65
- P66
- P67
- P68
- P69
- P70
- P71
- P72
- P73
- P74
- P75
- P76
- P77
- P78
- P79
- P80
