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位置：首页 > IC中文资料第129页 > MJD32C

MJD32C晶体管资料

  • MJD32C别名：MJD32C三极管、MJD32C晶体管、MJD32C晶体三极管

  • MJD32C生产厂家：韩国三星公司

  • MJD32C制作材料：

  • MJD32C性质：低频或音频放大 （LF）_功率放大 （PA）

  • MJD32C封装形式：贴片封装

  • MJD32C极限工作电压：

  • MJD32C最大电流允许值：3A

  • MJD32C最大工作频率：<1MHZ或未知

  • MJD32C引脚数：3

  • MJD32C最大耗散功率：15W

  • MJD32C放大倍数：

  • MJD32C图片代号：G-217

  • MJD32Cvtest：0

  • MJD32Chtest：999900

  • MJD32Catest：3

  • MJD32Cwtest：15

  • MJD32C代换 MJD32C用什么型号代替：

MJD32C价格

参考价格：￥0.5725

型号：MJD32C-13 品牌：Diodes 备注：这里有MJD32C多少钱，2025年最近7天走势，今日出价，今日竞价，MJD32C批发/采购报价，MJD32C行情走势销售排行榜，MJD32C报价。
型号 功能描述 生产厂家&企业 LOGO 操作
MJD32C

Low voltage PNP power transistor

DESCRIPTION TheMJD31BandMJD31CandtheMJD32BandMJD32CformcomplementaryNPN-PNPpairs.TheyaremanufacturedusingEpitaxialBasetechnologyforcost-effectiveperformance. ■STMicroelectronicsPREFERREDSALESTYPES ■SURFACE-MOUNTINGTO-252(DPAK)POWERPACKAGEINTAPE&REEL(SUFFIX

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS
MJD32C

SILICON POWER TRANSISTORS

ComplementaryPowerTransistorsDPAKForSurfaceMountApplications Designedforgeneralpurposeamplifierandlowspeedswitchingapplications. Features •LeadFormedforSurfaceMountApplicationsinPlasticSleeves •StraightLeadVersioninPlasticSleeves(“1”Suffix) •LeadFormedVersi

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
MJD32C

Complementary Power Transistors

Features ●LeadFormedforSurfaceMountApplicationsinPlasticSleeves ●Pb-FreePackagesareAvailable

KEXINGuangdong Kexin Industrial Co.,Ltd

科信电子广东科信实业有限公司

KEXIN
MJD32C

TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR

Description Designedforuseingeneralpurposeamplifierandswitchingapplications.

DCCOM

Dc Components

DCCOM
MJD32C

PNP SURFACE MOUNT TRANSISTOR

Features •BVCEO>-100V •IC=-3AhighContinuousCollectorCurrent •ICM=-5APeakPulseCurrent •IdealforPowerSwitchingorAmplificationApplications •ComplementaryNPNType:MJD31C •TotallyLead-Free&FullyRoHSCompliant(Notes1&2) •HalogenandAntimonyFree.“Gree

DIODESDiodes Incorporated

美台半导体

DIODES
MJD32C

TRANSISTOR (PNP)

FEATURES ●DesignedforGeneralPurposeAmplifierandLowSpeedSwitchingApplications ●LeadFormedforSurfaceMountApplicationsinPlasticSleeves(NoSuffix) ●StraightLeadVersioninPlasticSleeves(“–1”Suffix) ●LeadFormedVersionin16mmTapeandReel(“T4”Suffix) ●Electrically

FS

First Silicon Co., Ltd

FS
MJD32C

Complementary Power Transistors

ComplementaryPowerTransistorsDPAKForSurfaceMountApplications Designedforgeneralpurposeamplifierandlowspeedswitchingapplications. Features •LeadFormedforSurfaceMountApplicationsinPlasticSleeves •StraightLeadVersioninPlasticSleeves(“1”Suffix) •LeadFormedVersi

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
MJD32C

Silicon PNP transistor in a TO-252 Plastic Package.

Descriptions SiliconPNPtransistorinaTO-252PlasticPackage. Features LowSpeed,LoadFormedforSurfaceMountApplication. Applications GeneralPurposeAmplifier.

FOSHANFoshan Blue Rocket Electronics Co.,Ltd.

蓝箭电子佛山市蓝箭电子股份有限公司

FOSHAN
MJD32C

Silicon PNP epitaxial planer Transistors

Features •DesignedforGeneralPurposeAmplifierandLowSpeed SwitchingApplications •HalogenFreeAvailableUponRequestByAddingSuffix-HF •MoistureSensitivityLevel1 •EpoxyMeetsUL94V-0FlammabilityRating •LeadFreeFinish/RoHSCompliant(PSuffixDesignatesRoHS Comp

MCCMicro Commercial Components

美微科美微科半导体股份有限公司

MCC
MJD32C

TO-251-3L Plastic-Encapsulate Transistors

TRANSISTOR(PNP) FEATURES •DesignedforGeneralPurposeAmplifierandLowSpeedSwitchingApplications •LeadFormedforSurfaceMountApplicationsinPlasticSleeves(NoSuffix) •StraightLeadVersioninPlasticSleeves(“–1”Suffix) •LeadFormedVersionin16mmTapeandReel(“T4”Suffi

JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd

长电科技江苏长电科技股份有限公司

JIANGSU
MJD32C

isc Silicon PNP Power Transistors

DESCRIPTION •DCCurrentGain-hFE=25(Min)@IC=-1A •Collector-EmitterBreakdownVoltage-:V(BR)CEO=-100V(Min) •ComplementtoTypeMJD31C •DPAKforSurfaceMountApplications •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation APPLICATIONS •Designed

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
MJD32C

Complementary Silicon Power Ttransistors

DESCRIPTION Itisintentedforuseinpoweramplif)ierandswitchingapplications.

TGS

Tiger Electronic Co.,Ltd

TGS
MJD32C

PNP Epitaxial Silicon Transistor

DESCRIPTION •DesignedforGeneralPurposeAmplifierandLowSpeedSwitchingApplications •LeadFormedforSurfaceMountApplicationsinPlasticSleeves(NoSuffix) •StraightLeadVersioninPlasticSleeves(“–1”Suffix) •LeadFormedVersionin16mmTapeandReel(“T4”Suffix) •Electrica

SECOSSeCoS Halbleitertechnologie GmbH

喜可士喜可士股份有限公司

SECOS
MJD32C

100 V, 3 A PNP high power bipolar transistor

1.Generaldescription PNPhighpowerbipolartransistorinapowerDPAK,TO-252(SOT428C)Surface-MountedDevice (SMD)plasticpackage. NPNcomplement:MJD31C 2.Featuresandbenefits •Highthermalpowerdissipationcapability •Highenergyefficiencyduetolessheatgeneration •Elect

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

NEXPERIA
MJD32C

Silicon PNP Power Transistor

DESCRIPTION ·Collector-EmitterBreakdownVoltage -V(BR)CEO=100V(Min) ·Collector-EmitterSaturationVoltage -VCE(sat):=-1.2V(Max)@IC=-3A ·ComplementtoTypeMJD31C APPLICATIONS ·Designedforlowpoweraudioamplifierandlow-current, high-speedswitchingapplications

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
MJD32C

COMPLEMENTARY SILICON POWER TRANSISTORS

DESCRIPTION TheMJD31BandMJD31CandtheMJD32BandMJD32CformcomplementaryNPN-PNPpairs.TheyaremanufacturedusingEpitaxialBasetechnologyforcost-effectiveperformance. ■STMicroelectronicsPREFERREDSALESTYPES ■SURFACE-MOUNTINGTO-252(DPAK)POWERPACKAGEINTAPE&REEL(SUFFIX

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS
MJD32C

General Purpose Amplifier Low Speed Switching Applications D-PAK for Surface Mount Applications

GeneralPurposeAmplifierLowSpeedSwitchingApplicationsD-PAKforSurfaceMountApplications •LoadFormedforSurfaceMountApplication(NoSuffix) •StraightLead(I-PAK,“-I”Suffix) •ElectricallySimilartoPopularTIP32andTIP32C

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild
MJD32C

Complementary Power Transistors

文件：81.61 Kbytes Page：8 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
MJD32C

isc Silicon PNP Power Transistors

文件：361.21 Kbytes Page：3 Pages

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
MJD32C

100V PNP HIGH VOLTAGE TRANSISTOR

文件：373.13 Kbytes Page：7 Pages

DIODESDiodes Incorporated

美台半导体

DIODES
MJD32C

Complementary Power Transistors

文件：135.34 Kbytes Page：10 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
MJD32C

封装/外壳：TO-252-3，DPak（2 引线 + 接片），SC-63 包装：散装 描述：TRANS PNP 100V 3A DPAK 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS
MJD32C-13

PNP SURFACE MOUNT TRANSISTOR

Features •BVCEO>-100V •IC=-3AhighContinuousCollectorCurrent •ICM=-5APeakPulseCurrent •IdealforPowerSwitchingorAmplificationApplications •ComplementaryNPNType:MJD31C •TotallyLead-Free&FullyRoHSCompliant(Notes1&2) •HalogenandAntimonyFree.“Gree

DIODESDiodes Incorporated

美台半导体

DIODES
MJD32CA

100 V, 3 A PNP high power bipolar transistor

1.Generaldescription PNPhighpowerbipolartransistorinapowerDPAK,TO-252(SOT428C)Surface-MountedDevice (SMD)plasticpackage. NPNcomplement:MJD31CA 2.Featuresandbenefits •Highthermalpowerdissipationcapability •Highenergyefficiencyduetolessheatgeneration •Elec

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

NEXPERIA
MJD32CG

Complementary Power Transistors

ComplementaryPowerTransistorsDPAKForSurfaceMountApplications Designedforgeneralpurposeamplifierandlowspeedswitchingapplications. Features •LeadFormedforSurfaceMountApplicationsinPlasticSleeves •StraightLeadVersioninPlasticSleeves(“1”Suffix) •LeadFormedVersi

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
MJD32CQ

100V PNP HIGH VOLTAGE TRANSISTOR IN TO252

Description ThisBipolarJunctionTransistor(BJT)isdesignedtomeetthestringentrequirementsofAutomotiveApplications. Features •BVCEO>-100V •IC=-3AhighContinuousCollectorCurrent •ICM=-5APeakPulseCurrent •IdealforPowerSwitchingorAmplificationApplications •Comp

DIODESDiodes Incorporated

美台半导体

DIODES
MJD32CQ-13

100V PNP HIGH VOLTAGE TRANSISTOR IN TO252

Description ThisBipolarJunctionTransistor(BJT)isdesignedtomeetthestringentrequirementsofAutomotiveApplications. Features •BVCEO>-100V •IC=-3AhighContinuousCollectorCurrent •ICM=-5APeakPulseCurrent •IdealforPowerSwitchingorAmplificationApplications •Comp

DIODESDiodes Incorporated

美台半导体

DIODES
MJD32CRLG

Complementary Power Transistors

ComplementaryPowerTransistorsDPAKForSurfaceMountApplications Designedforgeneralpurposeamplifierandlowspeedswitchingapplications. Features •LeadFormedforSurfaceMountApplicationsinPlasticSleeves •StraightLeadVersioninPlasticSleeves(“1”Suffix) •LeadFormedVersi

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
MJD32CT4

Low voltage PNP power transistor

DESCRIPTION TheMJD31BandMJD31CandtheMJD32BandMJD32CformcomplementaryNPN-PNPpairs.TheyaremanufacturedusingEpitaxialBasetechnologyforcost-effectiveperformance. ■STMicroelectronicsPREFERREDSALESTYPES ■SURFACE-MOUNTINGTO-252(DPAK)POWERPACKAGEINTAPE&REEL(SUFFIX

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS
MJD32CT4-A

Low voltage PNP power transistor

Description Thedeviceismanufacturedinplanartechnologywith“baseisland”layout.Theresultingtransistorshowsexceptionalhighgainperformancecoupledwithverylowsaturationvoltage. Features ■Thisdeviceisqualifiedforautomotiveapplication ■Surface-mountingTO-252powerpacka

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS
MJD32CT4G

Complementary Power Transistors

ComplementaryPowerTransistorsDPAKForSurfaceMountApplications Designedforgeneralpurposeamplifierandlowspeedswitchingapplications. Features •LeadFormedforSurfaceMountApplicationsinPlasticSleeves •StraightLeadVersioninPlasticSleeves(“1”Suffix) •LeadFormedVersi

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
MJD32C-TP

Silicon PNP epitaxial planer Transistors

Features •DesignedforGeneralPurposeAmplifierandLowSpeed SwitchingApplications •HalogenFreeAvailableUponRequestByAddingSuffix-HF •MoistureSensitivityLevel1 •EpoxyMeetsUL94V-0FlammabilityRating •LeadFreeFinish/RoHSCompliant(PSuffixDesignatesRoHS Comp

MCCMicro Commercial Components

美微科美微科半导体股份有限公司

MCC
MJD32CUQ

100V PNP HIGH VOLTAGE TRANSISTOR

Description ThisBipolarJunctionTransistor(BJT)isdesignedtomeetthestringentrequirementsofAutomotiveApplications. Features •BVCEO>-100V •IC=-3AHighContinuousCollectorCurrent •ICM=-5APeakPulseCurrent •IdealforPowerSwitchingorAmplificationApplications •Comp

DIODESDiodes Incorporated

美台半导体

DIODES
MJD32CUQ-13

100V PNP HIGH VOLTAGE TRANSISTOR

Description ThisBipolarJunctionTransistor(BJT)isdesignedtomeetthestringentrequirementsofAutomotiveApplications. Features •BVCEO>-100V •IC=-3AHighContinuousCollectorCurrent •ICM=-5APeakPulseCurrent •IdealforPowerSwitchingorAmplificationApplications •Comp

DIODESDiodes Incorporated

美台半导体

DIODES
MJD32C_15

100V PNP HIGH VOLTAGE TRANSISTOR IN TO252

文件：314.61 Kbytes Page：7 Pages

DIODESDiodes Incorporated

美台半导体

DIODES
MJD32C_17

isc Silicon PNP Power Transistors

文件：361.21 Kbytes Page：3 Pages

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
MJD32C_18

100V PNP HIGH VOLTAGE TRANSISTOR

文件：373.13 Kbytes Page：7 Pages

DIODESDiodes Incorporated

美台半导体

DIODES
MJD32C1

Complementary Power Transistors

文件：81.61 Kbytes Page：8 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
MJD32C-13

100V PNP HIGH VOLTAGE TRANSISTOR

文件：373.13 Kbytes Page：7 Pages

DIODESDiodes Incorporated

美台半导体

DIODES
MJD32C1G

Complementary Power Transistors

文件：81.61 Kbytes Page：8 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
MJD32CAJ

封装/外壳：TO-252-3，DPak（2 引线 + 接片），SC-63 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：MJD32CA/SOT428/DPAK 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

ETC

知名厂家

MJD32CG

Complementary Power Transistors

文件：100.84 Kbytes Page：10 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
MJD32CG

Complementary Power Transistors

文件：81.61 Kbytes Page：8 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
MJD32CG

Complementary Power Transistors

文件：135.34 Kbytes Page：10 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
MJD32CQ

100V PNP HIGH VOLTAGE TRANSISTOR

文件：433.13 Kbytes Page：7 Pages

DIODESDiodes Incorporated

美台半导体

DIODES
MJD32CQ_15

100V PNP HIGH VOLTAGE TRANSISTOR IN TO252

文件：315.53 Kbytes Page：7 Pages

DIODESDiodes Incorporated

美台半导体

DIODES
MJD32CQ_16

100V PNP HIGH VOLTAGE TRANSISTOR

文件：433.13 Kbytes Page：7 Pages

DIODESDiodes Incorporated

美台半导体

DIODES
MJD32CQ-13

100V PNP HIGH VOLTAGE TRANSISTOR

文件：433.13 Kbytes Page：7 Pages

DIODESDiodes Incorporated

美台半导体

DIODES
MJD32CRL

Complementary Power Transistors

文件：81.61 Kbytes Page：8 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
MJD32CRLG

Complementary Power Transistors

文件：81.61 Kbytes Page：8 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
MJD32CRLG

Complementary Power Transistors

文件：135.34 Kbytes Page：10 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
MJD32CRLG

Complementary Power Transistors

文件：100.84 Kbytes Page：10 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
MJD32CT4

Complementary Power Transistors

文件：81.61 Kbytes Page：8 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
MJD32CT4

Complementary Power Transistors

文件：135.34 Kbytes Page：10 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
MJD32CT4G

Complementary Power Transistors

文件：100.84 Kbytes Page：10 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
MJD32CT4G

Complementary Power Transistors

文件：135.34 Kbytes Page：10 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
MJD32CT4G

Complementary Power Transistors

文件：81.61 Kbytes Page：8 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
MJD32CTF

General Purpose Amplifier Low Speed Switching Applications

文件：54.75 Kbytes Page：5 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

MJD32C产品属性

  • 类型

    描述

  • 型号

    MJD32C

  • 功能描述

    两极晶体管 - BJT 3A 100V 15W PNP

  • RoHS

    否

  • 制造商

    STMicroelectronics

  • 晶体管极性

    PNP 集电极—基极电压

  • VCBO

    集电极—发射极最大电压

  • VCEO

    - 40 V 发射极 - 基极电压

  • VEBO

    - 6 V

  • 增益带宽产品fT

    直流集电极/Base Gain hfe

  • Min

    100 A

  • 安装风格

    SMD/SMT

  • 封装/箱体

    PowerFLAT 2 x 2

MJD32C供应商更多...

更新时间：2025-7-26 18:10:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市昌和盛利电子有限公司
MJD32CT4G
ON
23+
SOT252
9526
询价
深圳市冠亿通科技有限公司
MJD32CRLG
ON/安森美
25+
25000
原厂原包 深圳现货 主打品牌 假一赔百 可开票!
询价
深圳市星宇佳科技有限公司
MJD32CT4
ST/意法
04+
TO-252
1903
询价
中天科工半导体（深圳）有限公司
MJD32CG
ONSEMI/安森美
25+
TO-252
45000
ONSEMI/安森美全新现货MJD32CG即刻询购立享优惠#长期有排单订
询价
深圳市明嘉莱科技有限公司
MJD32CT4
ST/意法
24+
TO-252-3
860000
明嘉莱只做原装正品现货
询价
芯灿微（深圳）科技有限公司
MJD32CT4-A
ST/意法半导体
21+
TO-252-3
8860
原装现货,实单价优
询价
深圳市英科美电子有限公司
MJD32CT4G
ON/安森美
2223+
TO-252
26800
只做原装正品假一赔十为客户做到零风险
询价
深圳市嵩宏达科技有限公司
MJD32CMOS(场效应管)
CJ/长电
24+
TO-251
50000
全新原装,一手货源,全场热卖!
询价
深圳市凯睿晟科技有限公司
MJD32CT4G
ON/安森美
21+
SMD
30000
百域芯优势 实单必成 可开13点增值税
询价
深圳市富利微电子科技有限公司
MJD32C-13
DIODES/美台
24+
NA
30000
房间原装现货特价热卖,有单详谈
询价

MJD32C芯片相关品牌

  • ANACHIP
  • BOTHHAND
  • EUROQUARTZ
  • Honeywell
  • MOLEX8
  • MPS
  • nichicon
  • POWERBOX
  • RECTRON
  • SY
  • TAI-TECH
  • WINBOND

MJD32C规格书下载地址

MJD32C参数引脚图相关

MJD32C数据表相关新闻

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