Low voltage PNP power transistor

Description The device is manufactured in planar technology with “base island” layout. The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage. Features ■ This device is qualified for automotive application ■ Surface-mounting TO-252 power packa

低压PNP功率晶体管

The device is manufactured in planar technology with “base island” layout. The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage. • This device is qualified for automotive application \n• Surface-mounting TO-252 power package in tape and reel \n• Complementary to the NPN type MJD31C;

封装/外壳：TO-252-3，DPak（2 引线 + 接片），SC-63 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS PNP 100V 3A DPAK 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

Low voltage PNP power transistor

DESCRIPTION The MJD31B and MJD31C and the MJD32B and MJD32C form complementary NPN-PNP pairs. They are manufactured using Epitaxial Base technology for cost-effective performance. ■ STMicroelectronics PREFERRED SALESTYPES ■ SURFACE-MOUNTING TO-252 (DPAK) POWER PACKAGE IN TAPE & REEL (SUFFIX

Complementary Power Transistors

文件：81.61 Kbytes Page：8 Pages

Complementary Power Transistors

文件：135.34 Kbytes Page：10 Pages

Complementary Power Transistors

文件：81.61 Kbytes Page：8 Pages