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位置：首页 > IC中文资料第10108页 > MJD31

MJD31晶体管资料

  • MJD31别名：MJD31三极管、MJD31晶体管、MJD31晶体三极管

  • MJD31生产厂家：韩国三星公司

  • MJD31制作材料：

  • MJD31性质：低频或音频放大 （LF）_功率放大 （PA）

  • MJD31封装形式：贴片封装

  • MJD31极限工作电压：

  • MJD31最大电流允许值：3A

  • MJD31最大工作频率：<1MHZ或未知

  • MJD31引脚数：3

  • MJD31最大耗散功率：15W

  • MJD31放大倍数：

  • MJD31图片代号：G-217

  • MJD31vtest：0

  • MJD31htest：999900

  • MJD31atest：3

  • MJD31wtest：15

  • MJD31代换 MJD31用什么型号代替：

MJD31价格

参考价格：￥1910.6839

型号：MJD3150-9 品牌：Emerson 备注：这里有MJD31多少钱，2025年最近7天走势，今日出价，今日竞价，MJD31批发/采购报价，MJD31行情走势销售排行榜，MJD31报价。
型号 功能描述 生产厂家&企业 LOGO 操作
MJD31

General Purpose Amplifier Low Speed Switching Applications

NPNEpitaxialSiliconTransistor Features •GeneralPurposeAmplifier •LowSpeedSwitchingApplications •LoadFormedforSurfaceMountApplication(NoSuffix) •StraightLead(I-PAK,“-I”Suffix) •ElectricallySimilartoPopularTIP31andTIP31C

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild
MJD31

Complementary Power Transistors

Features ●LeadFormedforSurfaceMountApplicationsinPlasticSleeves ●Pb-FreePackagesareAvailable

KEXINGuangdong Kexin Industrial Co.,Ltd

科信电子广东科信实业有限公司

KEXIN
MJD31

Complementary Power Transistors

ComplementaryPowerTransistorsDPAKForSurfaceMountApplications Designedforgeneralpurposeamplifierandlowspeedswitchingapplications. Features •LeadFormedforSurfaceMountApplicationsinPlasticSleeves •StraightLeadVersioninPlasticSleeves(“1”Suffix) •LeadFormedVersi

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
MJD31

Complementary Power Transistors

文件：100.84 Kbytes Page：10 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
MJD31

Complementary Power Transistors

文件：135.34 Kbytes Page：10 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
MJD31

Complementary Power Transistors

文件：81.61 Kbytes Page：8 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
MJD31B

COMPLEMENTARY SILICON POWER TRANSISTORS

DESCRIPTION TheMJD31BandMJD31CandtheMJD32BandMJD32CformcomplementaryNPN-PNPpairs.TheyaremanufacturedusingEpitaxialBasetechnologyforcost-effectiveperformance. ■STMicroelectronicsPREFERREDSALESTYPES ■SURFACE-MOUNTINGTO-252(DPAK)POWERPACKAGEINTAPE&REEL(SUFFIX

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS
MJD31C

SILICON POWER TRANSISTORS

ComplementaryPowerTransistorsDPAKForSurfaceMountApplications Designedforgeneralpurposeamplifierandlowspeedswitchingapplications. Features •LeadFormedforSurfaceMountApplicationsinPlasticSleeves •StraightLeadVersioninPlasticSleeves(“1”Suffix) •LeadFormedVersi

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
MJD31C

COMPLEMENTARY SILICON POWER TRANSISTORS

DESCRIPTION TheMJD31BandMJD31CandtheMJD32BandMJD32CformcomplementaryNPN-PNPpairs.TheyaremanufacturedusingEpitaxialBasetechnologyforcost-effectiveperformance. ■STMicroelectronicsPREFERREDSALESTYPES ■SURFACE-MOUNTINGTO-252(DPAK)POWERPACKAGEINTAPE&REEL(SUFFIX

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS
MJD31C

General Purpose Amplifier Low Speed Switching Applications

NPNEpitaxialSiliconTransistor Features •GeneralPurposeAmplifier •LowSpeedSwitchingApplications •LoadFormedforSurfaceMountApplication(NoSuffix) •StraightLead(I-PAK,“-I”Suffix) •ElectricallySimilartoPopularTIP31andTIP31C

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild
MJD31C

NPN SURFACE MOUNT TRANSISTOR

Features •BVCEO>100V •IC=3AhighContinuousCollectorCurrent •ICM=5APeakPulseCurrent •IdealforPowerSwitchingorAmplificationApplications •ComplementaryPNPType:MJD32C •TotallyLead-Free&FullyRoHSCompliant(Notes1&2) •HalogenandAntimonyFree.“Green”

DIODESDiodes Incorporated

美台半导体

DIODES
MJD31C

Complementary Power Transistors

Features ●LeadFormedforSurfaceMountApplicationsinPlasticSleeves ●Pb-FreePackagesareAvailable

KEXINGuangdong Kexin Industrial Co.,Ltd

科信电子广东科信实业有限公司

KEXIN
MJD31C

TRANSISTOR (NPN)

FEATURES ●DesignedforGeneralPurposeAmplifierand LowSpeedSwitchingApplications. ●LeadFormedforSurfaceMountApplicationsinPlasticSleeves(NoSuffix) ●StraightLeadVersioninPlasticSleeves(“–1”Suffix) ●LeadFormedVersionin16mmTapeandReel(“T4”Suffix) ●Electri

FS

First Silicon Co., Ltd

FS
MJD31C

Complementary Power Transistors

ComplementaryPowerTransistorsDPAKForSurfaceMountApplications Designedforgeneralpurposeamplifierandlowspeedswitchingapplications. Features •LeadFormedforSurfaceMountApplicationsinPlasticSleeves •StraightLeadVersioninPlasticSleeves(“1”Suffix) •LeadFormedVersi

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
MJD31C

3A , 100V NPN Plastic Encapsulated Transistor

FEATURES •Designedforgeneral •ExcellentDCCurrentGainCharacteristics

SECOSSeCoS Halbleitertechnologie GmbH

喜可士喜可士股份有限公司

SECOS
MJD31C

Complementary Silicon Power Ttransistors

DESCRIPTION Itisintentedforuseinpoweramplif)ierandswitchingapplications.

TGS

Tiger Electronic Co.,Ltd

TGS
MJD31C

Silicon NPN epitaxial planer Transistors

Features •Halogenfreeavailableuponrequestbyaddingsuffix-HF •LeadFreeFinish/RoHSCompliant(PSuffixdesignatesRoHS Compliant.Seeorderinginformation) •EpoxymeetsUL94V-0flammabilityrating •MoistureSensitivityLevel1 •ElectricallySimilartoPopularTIP31andTIP32

MCCMicro Commercial Components

美微科美微科半导体股份有限公司

MCC
MJD31C

TO-251-3L Plastic-Encapsulate Transistors

TRANSISTOR(NPN) FEATURES •DesignedforGeneralPurposeAmplifierandLowSpeedSwitchingApplications. •LeadFormedforSurfaceMountApplicationsinPlasticSleeves(NoSuffix) •StraightLeadVersioninPlasticSleeves(“–1”Suffix) •LeadFormedVersionin16mmTapeandReel(“T4”Suff

JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd

长电科技江苏长电科技股份有限公司

JIANGSU
MJD31C

100 V, 3 A NPN high power bipolar transistor

1.Generaldescription NPNhighpowerbipolartransistorinapowerDPAK,TO-252(SOT428C)Surface-MountedDevice (SMD)plasticpackage. PNPcomplement:MJD32C 2.Featuresandbenefits •Highthermalpowerdissipationcapability •Highenergyefficiencyduetolessheatgeneration •Elect

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

NEXPERIA
MJD31C

Silicon NPN Power Transistor

DESCRIPTION ·Collector-EmitterBreakdownVoltage -V(BR)CEO=100V(Min) ·Collector-EmitterSaturationVoltage -VCE(sat):=1.2V(Max)@IC=3A ·ComplementtoTypeMJD32C APPLICATIONS ·Designedforlowpoweraudioamplifierandlow-current, high-speedswitchingapplications

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
MJD31C

Low voltage NPN power transistor

Description Thedeviceismanufacturedinplanartechnologywith“baseisland”layout.Theresultingtransistorshowsexceptionalhighgainperformancecoupledwithverylowsaturationvoltage. Features ■Surface-mountingTO-252powerpackagein tapeandreel ■ComplementarytothePNPtyp

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS
MJD31C

Low voltage NPN power transistor

Description ThedeviceismanufacturedinPlanartechnologywith“BaseIsland”layout.Theresultingtransistorshowsexceptionalhighgainperformancecoupledwithverylowsaturationvoltage. Generalfeatures ■Thisdeviceisqualifiedforautomotiveapplication ■Surface-mounting

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS
MJD31C-13

NPN SURFACE MOUNT TRANSISTOR

Features •BVCEO>100V •IC=3AhighContinuousCollectorCurrent •ICM=5APeakPulseCurrent •IdealforPowerSwitchingorAmplificationApplications •ComplementaryPNPType:MJD32C •TotallyLead-Free&FullyRoHSCompliant(Notes1&2) •HalogenandAntimonyFree.“Green”

DIODESDiodes Incorporated

美台半导体

DIODES
MJD31C1G

Complementary Power Transistors

ComplementaryPowerTransistorsDPAKForSurfaceMountApplications Designedforgeneralpurposeamplifierandlowspeedswitchingapplications. Features •LeadFormedforSurfaceMountApplicationsinPlasticSleeves •StraightLeadVersioninPlasticSleeves(“1”Suffix) •LeadFormedVersi

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
MJD31CA

100 V, 3 A NPN high power bipolar transistor

1.Generaldescription NPNhighpowerbipolartransistorinapowerDPAK,TO-252(SOT428C)Surface-MountedDevice (SMD)plasticpackage. PNPcomplement:MJD32CA 2.Featuresandbenefits •Highthermalpowerdissipationcapability •Highenergyefficiencyduetolessheatgeneration •Elec

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

NEXPERIA
MJD31CG

Complementary Power Transistors

ComplementaryPowerTransistorsDPAKForSurfaceMountApplications Designedforgeneralpurposeamplifierandlowspeedswitchingapplications. Features •LeadFormedforSurfaceMountApplicationsinPlasticSleeves •StraightLeadVersioninPlasticSleeves(“1”Suffix) •LeadFormedVersi

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
MJD31CH-Q

100 V, 3 A NPN high power bipolar transistor

Featuresandbenefits •Highthermalpowerdissipationcapability •Highenergyefficiencyduetolessheatgeneration •HighcurrentgainatVCE=60V •ElectricallysimilartopopularMJD31series •Lowcollectoremittersaturationvoltage •Fastswitchingspeeds •Qualifiedaccordingto

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

NEXPERIA
MJD31CH-QJ

100 V, 3 A NPN high power bipolar transistor

Featuresandbenefits •Highthermalpowerdissipationcapability •Highenergyefficiencyduetolessheatgeneration •HighcurrentgainatVCE=60V •ElectricallysimilartopopularMJD31series •Lowcollectoremittersaturationvoltage •Fastswitchingspeeds •Qualifiedaccordingto

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

NEXPERIA
MJD31CQ

100V NPN HIGH VOLTAGE TRANSISTOR IN TO252

Description ThisBipolarJunctionTransistor(BJT)hasbeendesignedtomeetthestringentrequirementsofAutomotiveApplications. Features •BVCEO>100V •IC=3AhighContinuousCollectorCurrent •ICM=5APeakPulseCurrent •IdealforPowerSwitchingorAmplificationApplications •C

DIODESDiodes Incorporated

美台半导体

DIODES
MJD31CQ-13

100V NPN HIGH VOLTAGE TRANSISTOR IN TO252

Description ThisBipolarJunctionTransistor(BJT)hasbeendesignedtomeetthestringentrequirementsofAutomotiveApplications. Features •BVCEO>100V •IC=3AhighContinuousCollectorCurrent •ICM=5APeakPulseCurrent •IdealforPowerSwitchingorAmplificationApplications •C

DIODESDiodes Incorporated

美台半导体

DIODES
MJD31CRLG

Complementary Power Transistors

ComplementaryPowerTransistorsDPAKForSurfaceMountApplications Designedforgeneralpurposeamplifierandlowspeedswitchingapplications. Features •LeadFormedforSurfaceMountApplicationsinPlasticSleeves •StraightLeadVersioninPlasticSleeves(“1”Suffix) •LeadFormedVersi

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
MJD31CT4

Low voltage NPN power transistor

Description Thedeviceismanufacturedinplanartechnologywith“baseisland”layout.Theresultingtransistorshowsexceptionalhighgainperformancecoupledwithverylowsaturationvoltage. Features ■Surface-mountingTO-252powerpackagein tapeandreel ■ComplementarytothePNPtyp

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS
MJD31CT4-A

Low voltage NPN power transistor

Description ThedeviceismanufacturedinPlanartechnologywith“BaseIsland”layout.Theresultingtransistorshowsexceptionalhighgainperformancecoupledwithverylowsaturationvoltage. Generalfeatures ■Thisdeviceisqualifiedforautomotiveapplication ■Surface-mounting

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS
MJD31CT4G

Complementary Power Transistors

ComplementaryPowerTransistorsDPAKForSurfaceMountApplications Designedforgeneralpurposeamplifierandlowspeedswitchingapplications. Features •LeadFormedforSurfaceMountApplicationsinPlasticSleeves •StraightLeadVersioninPlasticSleeves(“1”Suffix) •LeadFormedVersi

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
MJD31CTF

NPN Epitaxial Silicon Transistor

NPNEpitaxialSiliconTransistor Features •GeneralPurposeAmplifier •LowSpeedSwitchingApplications •LoadFormedforSurfaceMountApplication(NoSuffix) •StraightLead(I-PAK,“-I”Suffix) •ElectricallySimilartoPopularTIP31andTIP31C

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild
MJD31C-TP

Silicon NPN epitaxial planer Transistors

Features •Halogenfreeavailableuponrequestbyaddingsuffix-HF •LeadFreeFinish/RoHSCompliant(PSuffixdesignatesRoHS Compliant.Seeorderinginformation) •EpoxymeetsUL94V-0flammabilityrating •MoistureSensitivityLevel1 •ElectricallySimilartoPopularTIP31andTIP32

MCCMicro Commercial Components

美微科美微科半导体股份有限公司

MCC
MJD31CUQ

100V NPN HIGH VOLTAGE TRANSISTOR

Description ThisBipolarJunctionTransistor(BJT)isdesignedtomeetthestringentrequirementsofAutomotiveApplications. Features •BVCEO>100V •IC=3AhighContinuousCollectorCurrent •ICM=5APeakPulseCurrent •IdealforPowerSwitchingorAmplificationApplications •Complem

DIODESDiodes Incorporated

美台半导体

DIODES
MJD31CUQ-13

100V NPN HIGH VOLTAGE TRANSISTOR

Description ThisBipolarJunctionTransistor(BJT)isdesignedtomeetthestringentrequirementsofAutomotiveApplications. Features •BVCEO>100V •IC=3AhighContinuousCollectorCurrent •ICM=5APeakPulseCurrent •IdealforPowerSwitchingorAmplificationApplications •Complem

DIODESDiodes Incorporated

美台半导体

DIODES
MJD31T4G

Complementary Power Transistors

ComplementaryPowerTransistorsDPAKForSurfaceMountApplications Designedforgeneralpurposeamplifierandlowspeedswitchingapplications. Features •LeadFormedforSurfaceMountApplicationsinPlasticSleeves •StraightLeadVersioninPlasticSleeves(“1”Suffix) •LeadFormedVersi

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
MJD31_05

Complementary Power Transistors

文件：81.61 Kbytes Page：8 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
MJD31_11

Complementary Power Transistors

文件：135.34 Kbytes Page：10 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
MJD31_16

Complementary Power Transistors

文件：100.84 Kbytes Page：10 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
MJD31C

100V NPN HIGH VOLTAGE TRANSISTOR

文件：372.99 Kbytes Page：7 Pages

DIODESDiodes Incorporated

美台半导体

DIODES
MJD31C

Complementary Power Transistors

文件：81.61 Kbytes Page：8 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
MJD31C

isc Silicon NPN Power Transistors

文件：334.23 Kbytes Page：2 Pages

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
MJD31C

Complementary Power Transistors

文件：135.34 Kbytes Page：10 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
MJD31C_15

NPN Plastic Encapsulated Transistor

文件：78.27 Kbytes Page：1 Pages

SECOSSeCoS Halbleitertechnologie GmbH

喜可士喜可士股份有限公司

SECOS
MJD31C_15

100V NPN HIGH VOLTAGE TRANSISTOR IN TO252

文件：314.68 Kbytes Page：7 Pages

DIODESDiodes Incorporated

美台半导体

DIODES
MJD31C_18

100V NPN HIGH VOLTAGE TRANSISTOR

文件：372.99 Kbytes Page：7 Pages

DIODESDiodes Incorporated

美台半导体

DIODES
MJD31C1

Complementary Power Transistors

文件：81.61 Kbytes Page：8 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
MJD31C1

封装/外壳：TO-251-3 短引线，IPak，TO-251AA 包装：托盘 描述：TRANS NPN 100V 3A IPAK 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
MJD31C-13

封装/外壳：TO-252-3，DPak（2 引线 + 接片），SC-63 包装：剪切带（CT）带盒（TB） 描述：TRANS NPN 100V 3A TO252 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

PAMDiodes Incorporated

龙鼎微龙鼎微电子（上海）有限公司

PAM
MJD31C-13

100V NPN HIGH VOLTAGE TRANSISTOR

文件：372.99 Kbytes Page：7 Pages

DIODESDiodes Incorporated

美台半导体

DIODES
MJD31C1G

Complementary Power Transistors

文件：81.61 Kbytes Page：8 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
MJD31C1G

Complementary Power Transistors

文件：135.34 Kbytes Page：10 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
MJD31C1G

Complementary Power Transistors

文件：100.84 Kbytes Page：10 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
MJD31CG

Complementary Power Transistors

文件：81.61 Kbytes Page：8 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
MJD31CG

Complementary Power Transistors

文件：135.34 Kbytes Page：10 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
MJD31CG

Complementary Power Transistors

文件：100.84 Kbytes Page：10 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
MJD31CQ

100V NPN HIGH VOLTAGE TRANSISTOR

文件：456.21 Kbytes Page：7 Pages

DIODESDiodes Incorporated

美台半导体

DIODES

MJD31产品属性

  • 类型

    描述

  • 型号

    MJD31

  • 制造商

    ONSEMI

  • 制造商全称

    ON Semiconductor

  • 功能描述

    Complementary Power Transistors

MJD31供应商更多...

更新时间：2025-7-30 23:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市高捷芯城科技有限公司
MJD31CT4-A
ST(意法半导体)
24+
TO-252
2669
原厂订货渠道,支持BOM配单一站式服务
询价
深圳市凌旭科技有限公司
MJD31CG-TC2R
LISION
2016+
SOT-252
3319
只做原装,假一罚十,公司可开17%增值税发票!
询价
深圳市明嘉莱科技有限公司
MJD31CT4G
ONSEMI
25+
SMD
518000
明嘉莱只做原装正品现货
询价
深圳诚思涵科技有限公司
MJD31CT4-A
ST
24+
32350
深圳存库原装现货
询价
中天科工半导体（深圳）有限公司
MJD31CG
ONSEMI/安森美
25+
TO-252
45000
ONSEMI/安森美全新现货MJD31CG即刻询购立享优惠#长期有排单订
询价
深圳市科恒伟业电子有限公司
MJD31CT4G
ON
2430+
TO252
8540
只做原装正品假一赔十为客户做到零风险!!
询价
深圳市星宇佳科技有限公司
MJD31CITU
FAIRCHILD/仙童
05+
TO-251
3746
深圳原装进口无铅现货
询价
深圳市拓亿芯电子有限公司
MJD31CT4G
ON/安森美
23+
TO252
15000
只做进口原装假一罚百
询价
深圳市航润创能电子集团有限公司
MJD31CRLG
ON/安森美
21+
NA
875
只做原装,假一罚十
询价
深圳市卓越微芯电子有限公司
MJD31CTF
FAIRCHILD
2020+
TO252
18600
百分百原装正品 真实公司现货库存 本公司只做原装 可
询价

MJD31芯片相关品牌

  • ABB
  • ARCH
  • CEL
  • COOPER
  • DGNJDZ
  • Ecliptek
  • E-SWITCH
  • FCI-CONNECTOR
  • HANWHAVISION
  • Heyco
  • NEXPERIA
  • TRSYS

MJD31规格书下载地址

MJD31参数引脚图相关

MJD31数据表相关新闻

DdatasheetPDF页码索引

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