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MJD31晶体管资料
MJD31别名：MJD31三极管、MJD31晶体管、MJD31晶体三极管
MJD31生产厂家：韩国三星公司
MJD31制作材料：
MJD31性质：低频或音频放大 （LF）_功率放大 （PA）
MJD31封装形式：贴片封装
MJD31极限工作电压：
MJD31最大电流允许值：3A
MJD31最大工作频率：<1MHZ或未知
MJD31引脚数：3
MJD31最大耗散功率：15W
MJD31放大倍数：
MJD31图片代号：G-217
MJD31vtest：0
MJD31htest：999900
- MJD31atest：3
MJD31wtest：15
MJD31代换 MJD31用什么型号代替：
MJD31价格
参考价格：￥1910.6839
型号：MJD3150-9 品牌：Emerson 备注：这里有MJD31多少钱，2025年最近7天走势，今日出价，今日竞价，MJD31批发/采购报价，MJD31行情走势销售排行榜，MJD31报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
MJD31 | General Purpose Amplifier Low Speed Switching Applications NPN Epitaxial Silicon Transistor Features • General Purpose Amplifier • Low Speed Switching Applications • Load Formed for Surface Mount Application (No Suffix) • Straight Lead (I-PAK, “- I” Suffix) • Electrically Similar to Popular TIP31 and TIP31C | Fairchild 仙童半导体 |   | |
MJD31 | Complementary Power Transistors Features ● Lead Formed for Surface Mount Applications in Plastic Sleeves ● Pb-Free Packages are Available | KEXIN 科信电子 | | |
MJD31 | Complementary Power Transistors Complementary Power Transistors DPAK For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. Features • Lead Formed for Surface Mount Applications in Plastic Sleeves • Straight Lead Version in Plastic Sleeves (“1” Suffix) • Lead Formed Versi | ONSEMI 安森美半导体 | | |
MJD31 | Complementary Power Transistors 文件：100.84 Kbytes Page：10 Pages | ONSEMI 安森美半导体 | | |
MJD31 | Complementary Power Transistors 文件：135.34 Kbytes Page：10 Pages | ONSEMI 安森美半导体 | | |
MJD31 | Complementary Power Transistors 文件：81.61 Kbytes Page：8 Pages | ONSEMI 安森美半导体 | | |
MJD31 | Transistors | ETC 知名厂家 | ETC | |
MJD31 | 3.0 A，40 V，NPN 双极功率晶体管 | ONSEMI 安森美半导体 | | |
COMPLEMENTARY SILICON POWER TRANSISTORS DESCRIPTION The MJD31B and MJD31C and the MJD32B and MJD32C form complementary NPN-PNP pairs. They are manufactured using Epitaxial Base technology for cost-effective performance. ■ STMicroelectronics PREFERRED SALESTYPES ■ SURFACE-MOUNTING TO-252 (DPAK) POWER PACKAGE IN TAPE & REEL (SUFFIX | STMICROELECTRONICS 意法半导体 | | ||
SILICON POWER TRANSISTORS Complementary Power Transistors DPAK For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. Features • Lead Formed for Surface Mount Applications in Plastic Sleeves • Straight Lead Version in Plastic Sleeves (“1” Suffix) • Lead Formed Versi | ONSEMI 安森美半导体 | | ||
COMPLEMENTARY SILICON POWER TRANSISTORS DESCRIPTION The MJD31B and MJD31C and the MJD32B and MJD32C form complementary NPN-PNP pairs. They are manufactured using Epitaxial Base technology for cost-effective performance. ■ STMicroelectronics PREFERRED SALESTYPES ■ SURFACE-MOUNTING TO-252 (DPAK) POWER PACKAGE IN TAPE & REEL (SUFFIX | STMICROELECTRONICS 意法半导体 | | ||
General Purpose Amplifier Low Speed Switching Applications NPN Epitaxial Silicon Transistor Features • General Purpose Amplifier • Low Speed Switching Applications • Load Formed for Surface Mount Application (No Suffix) • Straight Lead (I-PAK, “- I” Suffix) • Electrically Similar to Popular TIP31 and TIP31C | Fairchild 仙童半导体 | | ||
Low voltage NPN power transistor Description The device is manufactured in planar technology with “base island” layout. The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage. Features ■ Surface-mounting TO-252 power package in tape and reel ■ Complementary to the PNP typ | STMICROELECTRONICS 意法半导体 | | ||
Low voltage NPN power transistor Description The device is manufactured in Planar technology with “Base Island” layout. The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage. General features ■ This device is qualified for automotive application ■ Surface-mounting | STMICROELECTRONICS 意法半导体 | | ||
NPN SURFACE MOUNT TRANSISTOR Features • BVCEO > 100V • IC = 3A high Continuous Collector Current • ICM = 5A Peak Pulse Current • Ideal for Power Switching or Amplification Applications • Complementary PNP Type: MJD32C • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” | DIODES 美台半导体 | | ||
Complementary Power Transistors Features ● Lead Formed for Surface Mount Applications in Plastic Sleeves ● Pb-Free Packages are Available | KEXIN 科信电子 | | ||
TRANSISTOR (NPN) FEATURES ● Designed for General Purpose Amplifier and Low Speed Switching Applications. ● Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) ● Straight Lead Version in Plastic Sleeves (“–1” Suffix) ● Lead Formed Version in 16 mm Tape and Reel (“T4” Suffix) ● Electri | FS | | ||
Complementary Power Transistors Complementary Power Transistors DPAK For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. Features • Lead Formed for Surface Mount Applications in Plastic Sleeves • Straight Lead Version in Plastic Sleeves (“1” Suffix) • Lead Formed Versi | ONSEMI 安森美半导体 | | ||
3A , 100V NPN Plastic Encapsulated Transistor FEATURES • Designed for general • Excellent DC Current Gain Characteristics | SECOS 喜可士 | | ||
Complementary Silicon Power Ttransistors DESCRIPTION It is intented for use in power amplif)ier and switching applications. | TGS | | ||
Silicon NPN epitaxial planer Transistors Features • Halogen free available upon request by adding suffix -HF • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) • Epoxy meets UL 94 V-0 flammability rating • Moisture Sensitivity Level 1 • Electrically Similar to Popular TIP31 and TIP32 | MCC | | ||
TO-251-3L Plastic-Encapsulate Transistors TRANSISTOR (NPN) FEATURES • Designed for General Purpose Amplifier and Low Speed Switching Applications. • Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) • Straight Lead Version in Plastic Sleeves (“–1” Suffix) • Lead Formed Version in 16 mm Tape and Reel (“T4” Suff | JIANGSU 长电科技 | | ||
100 V, 3 A NPN high power bipolar transistor 1. General description NPN high power bipolar transistor in a power DPAK, TO-252 (SOT428C) Surface-Mounted Device (SMD) plastic package. PNP complement: MJD32C 2. Features and benefits • High thermal power dissipation capability • High energy efficiency due to less heat generation • Elect | NEXPERIA 安世 | | ||
Silicon NPN Power Transistor DESCRIPTION · Collector-Emitter Breakdown Voltage -V(BR)CEO= 100V(Min) · Collector-Emitter Saturation Voltage -VCE(sat):= 1.2V(Max) @IC= 3A ·Complement to Type MJD32C APPLICATIONS · Designed for low power audio amplifier and low-current, high-speed switching applications | ISC 无锡固电 | | ||
NPN SURFACE MOUNT TRANSISTOR Features • BVCEO > 100V • IC = 3A high Continuous Collector Current • ICM = 5A Peak Pulse Current • Ideal for Power Switching or Amplification Applications • Complementary PNP Type: MJD32C • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” | DIODES 美台半导体 | | ||
Complementary Power Transistors Complementary Power Transistors DPAK For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. Features • Lead Formed for Surface Mount Applications in Plastic Sleeves • Straight Lead Version in Plastic Sleeves (“1” Suffix) • Lead Formed Versi | ONSEMI 安森美半导体 | | ||
100 V, 3 A NPN high power bipolar transistor 1. General description NPN high power bipolar transistor in a power DPAK, TO-252 (SOT428C) Surface-Mounted Device (SMD) plastic package. PNP complement: MJD32CA 2. Features and benefits • High thermal power dissipation capability • High energy efficiency due to less heat generation • Elec | NEXPERIA 安世 | | ||
Complementary Power Transistors Complementary Power Transistors DPAK For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. Features • Lead Formed for Surface Mount Applications in Plastic Sleeves • Straight Lead Version in Plastic Sleeves (“1” Suffix) • Lead Formed Versi | ONSEMI 安森美半导体 | | ||
100 V, 3 A NPN high power bipolar transistor Features and benefits • High thermal power dissipation capability • High energy efficiency due to less heat generation • High current gain at VCE = 60 V • Electrically similar to popular MJD31 series • Low collector emitter saturation voltage • Fast switching speeds • Qualified according to | NEXPERIA 安世 | | ||
100 V, 3 A NPN high power bipolar transistor Features and benefits • High thermal power dissipation capability • High energy efficiency due to less heat generation • High current gain at VCE = 60 V • Electrically similar to popular MJD31 series • Low collector emitter saturation voltage • Fast switching speeds • Qualified according to | NEXPERIA 安世 | | ||
100V NPN HIGH VOLTAGE TRANSISTOR IN TO252 Description This Bipolar Junction Transistor (BJT) has been designed to meet the stringent requirements of Automotive Applications. Features • BVCEO > 100V • IC = 3A high Continuous Collector Current • ICM = 5A Peak Pulse Current • Ideal for Power Switching or Amplification Applications • C | DIODES 美台半导体 | | ||
100V NPN HIGH VOLTAGE TRANSISTOR IN TO252 Description This Bipolar Junction Transistor (BJT) has been designed to meet the stringent requirements of Automotive Applications. Features • BVCEO > 100V • IC = 3A high Continuous Collector Current • ICM = 5A Peak Pulse Current • Ideal for Power Switching or Amplification Applications • C | DIODES 美台半导体 | | ||
Complementary Power Transistors Complementary Power Transistors DPAK For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. Features • Lead Formed for Surface Mount Applications in Plastic Sleeves • Straight Lead Version in Plastic Sleeves (“1” Suffix) • Lead Formed Versi | ONSEMI 安森美半导体 | | ||
Low voltage NPN power transistor Description The device is manufactured in planar technology with “base island” layout. The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage. Features ■ Surface-mounting TO-252 power package in tape and reel ■ Complementary to the PNP typ | STMICROELECTRONICS 意法半导体 | | ||
Low voltage NPN power transistor Description The device is manufactured in Planar technology with “Base Island” layout. The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage. General features ■ This device is qualified for automotive application ■ Surface-mounting | STMICROELECTRONICS 意法半导体 | | ||
Complementary Power Transistors Complementary Power Transistors DPAK For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. Features • Lead Formed for Surface Mount Applications in Plastic Sleeves • Straight Lead Version in Plastic Sleeves (“1” Suffix) • Lead Formed Versi | ONSEMI 安森美半导体 | | ||
NPN Epitaxial Silicon Transistor NPN Epitaxial Silicon Transistor Features • General Purpose Amplifier • Low Speed Switching Applications • Load Formed for Surface Mount Application (No Suffix) • Straight Lead (I-PAK, “- I” Suffix) • Electrically Similar to Popular TIP31 and TIP31C | Fairchild 仙童半导体 | | ||
Silicon NPN epitaxial planer Transistors Features • Halogen free available upon request by adding suffix -HF • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) • Epoxy meets UL 94 V-0 flammability rating • Moisture Sensitivity Level 1 • Electrically Similar to Popular TIP31 and TIP32 | MCC | | ||
100V NPN HIGH VOLTAGE TRANSISTOR Description This Bipolar Junction Transistor (BJT) is designed to meet the stringent requirements of Automotive Applications. Features • BVCEO > 100V • IC = 3A high Continuous Collector Current • ICM = 5A Peak Pulse Current • Ideal for Power Switching or Amplification Applications • Complem | DIODES 美台半导体 | | ||
100V NPN HIGH VOLTAGE TRANSISTOR Description This Bipolar Junction Transistor (BJT) is designed to meet the stringent requirements of Automotive Applications. Features • BVCEO > 100V • IC = 3A high Continuous Collector Current • ICM = 5A Peak Pulse Current • Ideal for Power Switching or Amplification Applications • Complem | DIODES 美台半导体 | | ||
Complementary Power Transistors Complementary Power Transistors DPAK For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. Features • Lead Formed for Surface Mount Applications in Plastic Sleeves • Straight Lead Version in Plastic Sleeves (“1” Suffix) • Lead Formed Versi | ONSEMI 安森美半导体 | | ||
Complementary Power Transistors 文件：81.61 Kbytes Page：8 Pages | ONSEMI 安森美半导体 | | ||
Complementary Power Transistors 文件：135.34 Kbytes Page：10 Pages | ONSEMI 安森美半导体 | | ||
Complementary Power Transistors 文件：100.84 Kbytes Page：10 Pages | ONSEMI 安森美半导体 | | ||
Complementary Power Transistors 文件：135.34 Kbytes Page：10 Pages | ONSEMI 安森美半导体 | | ||
Complementary Power Transistors 文件：81.61 Kbytes Page：8 Pages | ONSEMI 安森美半导体 | | ||
Discrete and MOSFET components, analog & logic ICs 文件：11.62183 Mbytes Page：234 Pages | NEXPERIA 安世 | | ||
isc Silicon NPN Power Transistors 文件：334.23 Kbytes Page：2 Pages | ISC 无锡固电 | | ||
100V NPN HIGH VOLTAGE TRANSISTOR 文件：372.99 Kbytes Page：7 Pages | DIODES 美台半导体 | | ||
低压NPN功率晶体管 | STMICROELECTRONICS 意法半导体 | | ||
NPN Plastic Encapsulated Transistor 文件：78.27 Kbytes Page：1 Pages | SECOS 喜可士 | | ||
100V NPN HIGH VOLTAGE TRANSISTOR IN TO252 文件：314.68 Kbytes Page：7 Pages | DIODES 美台半导体 | | ||
100V NPN HIGH VOLTAGE TRANSISTOR 文件：372.99 Kbytes Page：7 Pages | DIODES 美台半导体 | | ||
Complementary Power Transistors 文件：81.61 Kbytes Page：8 Pages | ONSEMI 安森美半导体 | | ||
封装/外壳：TO-251-3 短引线，IPak，TO-251AA 包装：托盘 描述：TRANS NPN 100V 3A IPAK 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 | ONSEMI 安森美半导体 | | ||
封装/外壳：TO-252-3，DPak（2 引线 + 接片），SC-63 包装：剪切带（CT）带盒（TB） 描述：TRANS NPN 100V 3A TO252 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 | DIODES 美台半导体 | | ||
100V NPN HIGH VOLTAGE TRANSISTOR 文件：372.99 Kbytes Page：7 Pages | DIODES 美台半导体 | | ||
Complementary Power Transistors 文件：81.61 Kbytes Page：8 Pages | ONSEMI 安森美半导体 | | ||
Complementary Power Transistors 文件：135.34 Kbytes Page：10 Pages | ONSEMI 安森美半导体 | | ||
Complementary Power Transistors 文件：100.84 Kbytes Page：10 Pages | ONSEMI 安森美半导体 | |
MJD31产品属性
- 类型
描述
- 型号
MJD31
- 制造商
ONSEMI
- 制造商全称
ON Semiconductor
- 功能描述
Complementary Power Transistors
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ONSEMI/安森美 |
25+ |
TO-252 |
45000 |
ONSEMI/安森美全新现货MJD31CG即刻询购立享优惠#长期有排单订 |
|||
ON/安森美 |
18+ |
TO-252 |
237 |
只做原装正品 |
|||
ON |
2430+ |
TO252 |
8540 |
只做原装正品假一赔十为客户做到零风险!! |
|||
FAIRCHILD |
24+ |
TO-251-3 |
36200 |
全新原装现货/假一罚百! |
|||
ON |
23+ |
DPAK |
56000 |
||||
FAIRCHILD/仙童 |
05+ |
TO-251 |
3746 |
深圳原装进口无铅现货 |
|||
ON/安森美 |
23+ |
TO252 |
15000 |
只做进口原装假一罚百 |
|||
ON |
20+ |
SOT-252 |
45000 |
全新原装公司现货
|
|||
ON(安森美) |
23+ |
TO-252-2(DPAK) |
12409 |
公司只做原装正品,假一赔十 |
|||
ONSEMI |
25+ |
SMD |
518000 |
明嘉莱只做原装正品现货 |
MJD31芯片相关品牌
MJD31规格书下载地址
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