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位置：首页 > IC中文资料第2940页 > MJD31C

MJD31C晶体管资料

  • MJD31C别名：MJD31C三极管、MJD31C晶体管、MJD31C晶体三极管

  • MJD31C生产厂家：韩国三星公司

  • MJD31C制作材料：

  • MJD31C性质：低频或音频放大 （LF）_功率放大 （PA）

  • MJD31C封装形式：贴片封装

  • MJD31C极限工作电压：

  • MJD31C最大电流允许值：3A

  • MJD31C最大工作频率：<1MHZ或未知

  • MJD31C引脚数：3

  • MJD31C最大耗散功率：15W

  • MJD31C放大倍数：

  • MJD31C图片代号：G-217

  • MJD31Cvtest：0

  • MJD31Chtest：999900

  • MJD31Catest：3

  • MJD31Cwtest：15

  • MJD31C代换 MJD31C用什么型号代替：

MJD31C价格

参考价格：￥0.5788

型号：MJD31C-13 品牌：Diodes 备注：这里有MJD31C多少钱，2025年最近7天走势，今日出价，今日竞价，MJD31C批发/采购报价，MJD31C行情走势销售排行榜，MJD31C报价。
型号 功能描述 生产厂家&企业 LOGO 操作
MJD31C

SILICON POWER TRANSISTORS

ComplementaryPowerTransistorsDPAKForSurfaceMountApplications Designedforgeneralpurposeamplifierandlowspeedswitchingapplications. Features •LeadFormedforSurfaceMountApplicationsinPlasticSleeves •StraightLeadVersioninPlasticSleeves(“1”Suffix) •LeadFormedVersi

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
MJD31C

COMPLEMENTARY SILICON POWER TRANSISTORS

DESCRIPTION TheMJD31BandMJD31CandtheMJD32BandMJD32CformcomplementaryNPN-PNPpairs.TheyaremanufacturedusingEpitaxialBasetechnologyforcost-effectiveperformance. ■STMicroelectronicsPREFERREDSALESTYPES ■SURFACE-MOUNTINGTO-252(DPAK)POWERPACKAGEINTAPE&REEL(SUFFIX

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS
MJD31C

General Purpose Amplifier Low Speed Switching Applications

NPNEpitaxialSiliconTransistor Features •GeneralPurposeAmplifier •LowSpeedSwitchingApplications •LoadFormedforSurfaceMountApplication(NoSuffix) •StraightLead(I-PAK,“-I”Suffix) •ElectricallySimilartoPopularTIP31andTIP31C

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild
MJD31C

NPN SURFACE MOUNT TRANSISTOR

Features •BVCEO>100V •IC=3AhighContinuousCollectorCurrent •ICM=5APeakPulseCurrent •IdealforPowerSwitchingorAmplificationApplications •ComplementaryPNPType:MJD32C •TotallyLead-Free&FullyRoHSCompliant(Notes1&2) •HalogenandAntimonyFree.“Green”

DIODESDiodes Incorporated

美台半导体

DIODES
MJD31C

Complementary Power Transistors

Features ●LeadFormedforSurfaceMountApplicationsinPlasticSleeves ●Pb-FreePackagesareAvailable

KEXINGuangdong Kexin Industrial Co.,Ltd

科信电子广东科信实业有限公司

KEXIN
MJD31C

TRANSISTOR (NPN)

FEATURES ●DesignedforGeneralPurposeAmplifierand LowSpeedSwitchingApplications. ●LeadFormedforSurfaceMountApplicationsinPlasticSleeves(NoSuffix) ●StraightLeadVersioninPlasticSleeves(“–1”Suffix) ●LeadFormedVersionin16mmTapeandReel(“T4”Suffix) ●Electri

FS

First Silicon Co., Ltd

FS
MJD31C

Complementary Power Transistors

ComplementaryPowerTransistorsDPAKForSurfaceMountApplications Designedforgeneralpurposeamplifierandlowspeedswitchingapplications. Features •LeadFormedforSurfaceMountApplicationsinPlasticSleeves •StraightLeadVersioninPlasticSleeves(“1”Suffix) •LeadFormedVersi

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
MJD31C

3A , 100V NPN Plastic Encapsulated Transistor

FEATURES •Designedforgeneral •ExcellentDCCurrentGainCharacteristics

SECOSSeCoS Halbleitertechnologie GmbH

喜可士喜可士股份有限公司

SECOS
MJD31C

Complementary Silicon Power Ttransistors

DESCRIPTION Itisintentedforuseinpoweramplif)ierandswitchingapplications.

TGS

Tiger Electronic Co.,Ltd

TGS
MJD31C

Silicon NPN epitaxial planer Transistors

Features •Halogenfreeavailableuponrequestbyaddingsuffix-HF •LeadFreeFinish/RoHSCompliant(PSuffixdesignatesRoHS Compliant.Seeorderinginformation) •EpoxymeetsUL94V-0flammabilityrating •MoistureSensitivityLevel1 •ElectricallySimilartoPopularTIP31andTIP32

MCCMicro Commercial Components

美微科美微科半导体股份有限公司

MCC
MJD31C

TO-251-3L Plastic-Encapsulate Transistors

TRANSISTOR(NPN) FEATURES •DesignedforGeneralPurposeAmplifierandLowSpeedSwitchingApplications. •LeadFormedforSurfaceMountApplicationsinPlasticSleeves(NoSuffix) •StraightLeadVersioninPlasticSleeves(“–1”Suffix) •LeadFormedVersionin16mmTapeandReel(“T4”Suff

JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd

长电科技江苏长电科技股份有限公司

JIANGSU
MJD31C

100 V, 3 A NPN high power bipolar transistor

1.Generaldescription NPNhighpowerbipolartransistorinapowerDPAK,TO-252(SOT428C)Surface-MountedDevice (SMD)plasticpackage. PNPcomplement:MJD32C 2.Featuresandbenefits •Highthermalpowerdissipationcapability •Highenergyefficiencyduetolessheatgeneration •Elect

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

NEXPERIA
MJD31C

Silicon NPN Power Transistor

DESCRIPTION ·Collector-EmitterBreakdownVoltage -V(BR)CEO=100V(Min) ·Collector-EmitterSaturationVoltage -VCE(sat):=1.2V(Max)@IC=3A ·ComplementtoTypeMJD32C APPLICATIONS ·Designedforlowpoweraudioamplifierandlow-current, high-speedswitchingapplications

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
MJD31C

Low voltage NPN power transistor

Description Thedeviceismanufacturedinplanartechnologywith“baseisland”layout.Theresultingtransistorshowsexceptionalhighgainperformancecoupledwithverylowsaturationvoltage. Features ■Surface-mountingTO-252powerpackagein tapeandreel ■ComplementarytothePNPtyp

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS
MJD31C

Low voltage NPN power transistor

Description ThedeviceismanufacturedinPlanartechnologywith“BaseIsland”layout.Theresultingtransistorshowsexceptionalhighgainperformancecoupledwithverylowsaturationvoltage. Generalfeatures ■Thisdeviceisqualifiedforautomotiveapplication ■Surface-mounting

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS
MJD31C

Complementary Power Transistors

文件：135.34 Kbytes Page：10 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
MJD31C

isc Silicon NPN Power Transistors

文件：334.23 Kbytes Page：2 Pages

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
MJD31C

100V NPN HIGH VOLTAGE TRANSISTOR

文件：372.99 Kbytes Page：7 Pages

DIODESDiodes Incorporated

美台半导体

DIODES
MJD31C

Complementary Power Transistors

文件：81.61 Kbytes Page：8 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
MJD31C

封装/外壳：TO-252-3，DPak（2 引线 + 接片），SC-63 包装：散装 描述：TRANS NPN 100V 3A DPAK 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS
MJD31C-13

NPN SURFACE MOUNT TRANSISTOR

Features •BVCEO>100V •IC=3AhighContinuousCollectorCurrent •ICM=5APeakPulseCurrent •IdealforPowerSwitchingorAmplificationApplications •ComplementaryPNPType:MJD32C •TotallyLead-Free&FullyRoHSCompliant(Notes1&2) •HalogenandAntimonyFree.“Green”

DIODESDiodes Incorporated

美台半导体

DIODES
MJD31C1G

Complementary Power Transistors

ComplementaryPowerTransistorsDPAKForSurfaceMountApplications Designedforgeneralpurposeamplifierandlowspeedswitchingapplications. Features •LeadFormedforSurfaceMountApplicationsinPlasticSleeves •StraightLeadVersioninPlasticSleeves(“1”Suffix) •LeadFormedVersi

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
MJD31CA

100 V, 3 A NPN high power bipolar transistor

1.Generaldescription NPNhighpowerbipolartransistorinapowerDPAK,TO-252(SOT428C)Surface-MountedDevice (SMD)plasticpackage. PNPcomplement:MJD32CA 2.Featuresandbenefits •Highthermalpowerdissipationcapability •Highenergyefficiencyduetolessheatgeneration •Elec

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

NEXPERIA
MJD31CG

Complementary Power Transistors

ComplementaryPowerTransistorsDPAKForSurfaceMountApplications Designedforgeneralpurposeamplifierandlowspeedswitchingapplications. Features •LeadFormedforSurfaceMountApplicationsinPlasticSleeves •StraightLeadVersioninPlasticSleeves(“1”Suffix) •LeadFormedVersi

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
MJD31CH-Q

100 V, 3 A NPN high power bipolar transistor

Featuresandbenefits •Highthermalpowerdissipationcapability •Highenergyefficiencyduetolessheatgeneration •HighcurrentgainatVCE=60V •ElectricallysimilartopopularMJD31series •Lowcollectoremittersaturationvoltage •Fastswitchingspeeds •Qualifiedaccordingto

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

NEXPERIA
MJD31CH-QJ

100 V, 3 A NPN high power bipolar transistor

Featuresandbenefits •Highthermalpowerdissipationcapability •Highenergyefficiencyduetolessheatgeneration •HighcurrentgainatVCE=60V •ElectricallysimilartopopularMJD31series •Lowcollectoremittersaturationvoltage •Fastswitchingspeeds •Qualifiedaccordingto

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

NEXPERIA
MJD31CQ

100V NPN HIGH VOLTAGE TRANSISTOR IN TO252

Description ThisBipolarJunctionTransistor(BJT)hasbeendesignedtomeetthestringentrequirementsofAutomotiveApplications. Features •BVCEO>100V •IC=3AhighContinuousCollectorCurrent •ICM=5APeakPulseCurrent •IdealforPowerSwitchingorAmplificationApplications •C

DIODESDiodes Incorporated

美台半导体

DIODES
MJD31CQ-13

100V NPN HIGH VOLTAGE TRANSISTOR IN TO252

Description ThisBipolarJunctionTransistor(BJT)hasbeendesignedtomeetthestringentrequirementsofAutomotiveApplications. Features •BVCEO>100V •IC=3AhighContinuousCollectorCurrent •ICM=5APeakPulseCurrent •IdealforPowerSwitchingorAmplificationApplications •C

DIODESDiodes Incorporated

美台半导体

DIODES
MJD31CRLG

Complementary Power Transistors

ComplementaryPowerTransistorsDPAKForSurfaceMountApplications Designedforgeneralpurposeamplifierandlowspeedswitchingapplications. Features •LeadFormedforSurfaceMountApplicationsinPlasticSleeves •StraightLeadVersioninPlasticSleeves(“1”Suffix) •LeadFormedVersi

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
MJD31CT4

Low voltage NPN power transistor

Description Thedeviceismanufacturedinplanartechnologywith“baseisland”layout.Theresultingtransistorshowsexceptionalhighgainperformancecoupledwithverylowsaturationvoltage. Features ■Surface-mountingTO-252powerpackagein tapeandreel ■ComplementarytothePNPtyp

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS
MJD31CT4-A

Low voltage NPN power transistor

Description ThedeviceismanufacturedinPlanartechnologywith“BaseIsland”layout.Theresultingtransistorshowsexceptionalhighgainperformancecoupledwithverylowsaturationvoltage. Generalfeatures ■Thisdeviceisqualifiedforautomotiveapplication ■Surface-mounting

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS
MJD31CT4G

Complementary Power Transistors

ComplementaryPowerTransistorsDPAKForSurfaceMountApplications Designedforgeneralpurposeamplifierandlowspeedswitchingapplications. Features •LeadFormedforSurfaceMountApplicationsinPlasticSleeves •StraightLeadVersioninPlasticSleeves(“1”Suffix) •LeadFormedVersi

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
MJD31CTF

NPN Epitaxial Silicon Transistor

NPNEpitaxialSiliconTransistor Features •GeneralPurposeAmplifier •LowSpeedSwitchingApplications •LoadFormedforSurfaceMountApplication(NoSuffix) •StraightLead(I-PAK,“-I”Suffix) •ElectricallySimilartoPopularTIP31andTIP31C

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild
MJD31C-TP

Silicon NPN epitaxial planer Transistors

Features •Halogenfreeavailableuponrequestbyaddingsuffix-HF •LeadFreeFinish/RoHSCompliant(PSuffixdesignatesRoHS Compliant.Seeorderinginformation) •EpoxymeetsUL94V-0flammabilityrating •MoistureSensitivityLevel1 •ElectricallySimilartoPopularTIP31andTIP32

MCCMicro Commercial Components

美微科美微科半导体股份有限公司

MCC
MJD31CUQ

100V NPN HIGH VOLTAGE TRANSISTOR

Description ThisBipolarJunctionTransistor(BJT)isdesignedtomeetthestringentrequirementsofAutomotiveApplications. Features •BVCEO>100V •IC=3AhighContinuousCollectorCurrent •ICM=5APeakPulseCurrent •IdealforPowerSwitchingorAmplificationApplications •Complem

DIODESDiodes Incorporated

美台半导体

DIODES
MJD31CUQ-13

100V NPN HIGH VOLTAGE TRANSISTOR

Description ThisBipolarJunctionTransistor(BJT)isdesignedtomeetthestringentrequirementsofAutomotiveApplications. Features •BVCEO>100V •IC=3AhighContinuousCollectorCurrent •ICM=5APeakPulseCurrent •IdealforPowerSwitchingorAmplificationApplications •Complem

DIODESDiodes Incorporated

美台半导体

DIODES
MJD31C_15

NPN Plastic Encapsulated Transistor

文件：78.27 Kbytes Page：1 Pages

SECOSSeCoS Halbleitertechnologie GmbH

喜可士喜可士股份有限公司

SECOS
MJD31C_15

100V NPN HIGH VOLTAGE TRANSISTOR IN TO252

文件：314.68 Kbytes Page：7 Pages

DIODESDiodes Incorporated

美台半导体

DIODES
MJD31C_18

100V NPN HIGH VOLTAGE TRANSISTOR

文件：372.99 Kbytes Page：7 Pages

DIODESDiodes Incorporated

美台半导体

DIODES
MJD31C1

Complementary Power Transistors

文件：81.61 Kbytes Page：8 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
MJD31C-13

100V NPN HIGH VOLTAGE TRANSISTOR

文件：372.99 Kbytes Page：7 Pages

DIODESDiodes Incorporated

美台半导体

DIODES
MJD31C-13

封装/外壳：TO-252-3，DPak（2 引线 + 接片），SC-63 包装：剪切带（CT）带盒（TB） 描述：TRANS NPN 100V 3A TO252 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

PAMDiodes Incorporated

龙鼎微龙鼎微电子（上海）有限公司

PAM
MJD31C1G

Complementary Power Transistors

文件：81.61 Kbytes Page：8 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
MJD31C1G

Complementary Power Transistors

文件：135.34 Kbytes Page：10 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
MJD31C1G

Complementary Power Transistors

文件：100.84 Kbytes Page：10 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
MJD31CG

Complementary Power Transistors

文件：81.61 Kbytes Page：8 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
MJD31CG

Complementary Power Transistors

文件：135.34 Kbytes Page：10 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
MJD31CG

Complementary Power Transistors

文件：100.84 Kbytes Page：10 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
MJD31CQ

100V NPN HIGH VOLTAGE TRANSISTOR

文件：456.21 Kbytes Page：7 Pages

DIODESDiodes Incorporated

美台半导体

DIODES
MJD31CQ_15

100V NPN HIGH VOLTAGE TRANSISTOR IN TO252

文件：316.5 Kbytes Page：7 Pages

DIODESDiodes Incorporated

美台半导体

DIODES
MJD31CQ_16

100V NPN HIGH VOLTAGE TRANSISTOR

文件：456.21 Kbytes Page：7 Pages

DIODESDiodes Incorporated

美台半导体

DIODES
MJD31CQ-13

100V NPN HIGH VOLTAGE TRANSISTOR

文件：456.21 Kbytes Page：7 Pages

DIODESDiodes Incorporated

美台半导体

DIODES
MJD31CRL

Complementary Power Transistors

文件：81.61 Kbytes Page：8 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
MJD31CRLG

Complementary Power Transistors

文件：135.34 Kbytes Page：10 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
MJD31CRLG

Complementary Power Transistors

文件：81.61 Kbytes Page：8 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
MJD31CRLG

Complementary Power Transistors

文件：100.84 Kbytes Page：10 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
MJD31CT4

Complementary Power Transistors

文件：81.61 Kbytes Page：8 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
MJD31CT4G

Complementary Power Transistors

文件：100.84 Kbytes Page：10 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
MJD31CT4G

Complementary Power Transistors

文件：81.61 Kbytes Page：8 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
MJD31CT4G

Complementary Power Transistors

文件：135.34 Kbytes Page：10 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

MJD31C产品属性

  • 类型

    描述

  • 型号

    MJD31C

  • 功能描述

    两极晶体管 - BJT NPN Gen Pur Switch

  • RoHS

    否

  • 制造商

    STMicroelectronics

  • 晶体管极性

    PNP 集电极—基极电压

  • VCBO

    集电极—发射极最大电压

  • VCEO

    - 40 V 发射极 - 基极电压

  • VEBO

    - 6 V

  • 增益带宽产品fT

    直流集电极/Base Gain hfe

  • Min

    100 A

  • 安装风格

    SMD/SMT

  • 封装/箱体

    PowerFLAT 2 x 2

MJD31C供应商更多...

更新时间：2025-7-27 23:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市高捷芯城科技有限公司
MJD31CT4-A
ST(意法半导体)
24+
TO-252
2669
原厂订货渠道,支持BOM配单一站式服务
询价
深圳市凌旭科技有限公司
MJD31CG-TC2R
LISION
2016+
SOT-252
3319
只做原装,假一罚十,公司可开17%增值税发票!
询价
瀚佳科技(深圳)有限公司
MJD31CITU
FAIRCHILD
24+
TO-251-3
36200
全新原装现货/假一罚百!
询价
深圳诚思涵科技有限公司
MJD31CT4-A
ST
24+
32350
深圳存库原装现货
询价
深圳市科恒伟业电子有限公司
MJD31CT4G
ON
2430+
TO252
8540
只做原装正品假一赔十为客户做到零风险!!
询价
深圳市星宇佳科技有限公司
MJD31CITU
FAIRCHILD/仙童
05+
TO-251
3746
深圳原装进口无铅现货
询价
深圳市汇莱威科技有限公司
MJD31CT4-A
ST/意法
24+
TO-252
504578
免费送样原盒原包现货一手渠道联系
询价
深圳市得捷芯城科技有限公司
MJD31CT4G
ON(安森美)
24+
TO-252-2(DPAK)
7548
原厂可订货,技术支持,直接渠道。可签保供合同
询价
深圳市明嘉莱科技有限公司
MJD31CT4G
ONSEMI
25+
SMD
518000
明嘉莱只做原装正品现货
询价
深圳市恒凯威科技开发有限公司
MJD31CT4G
ON/安森美
21+
DPAK
20000
只做原装,质量保证
询价

MJD31C芯片相关品牌

  • CDE
  • COMCHIP
  • COPAL
  • Cypress
  • freescale
  • ILSI
  • NKK
  • OPTOWAY
  • OTTO
  • Philips
  • WALSIN
  • WURTH

MJD31C规格书下载地址

MJD31C参数引脚图相关

MJD31C数据表相关新闻

DdatasheetPDF页码索引

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