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MJD31C晶体管资料
MJD31C别名：MJD31C三极管、MJD31C晶体管、MJD31C晶体三极管
MJD31C生产厂家：韩国三星公司
MJD31C制作材料：
MJD31C性质：低频或音频放大 （LF）_功率放大 （PA）
MJD31C封装形式：贴片封装
MJD31C极限工作电压：
MJD31C最大电流允许值：3A
MJD31C最大工作频率：<1MHZ或未知
MJD31C引脚数：3
MJD31C最大耗散功率：15W
MJD31C放大倍数：
MJD31C图片代号：G-217
MJD31Cvtest：0
MJD31Chtest：999900
- MJD31Catest：3
MJD31Cwtest：15
MJD31C代换 MJD31C用什么型号代替：
MJD31C价格
参考价格：￥0.5788
型号：MJD31C-13 品牌：Diodes 备注：这里有MJD31C多少钱，2025年最近7天走势，今日出价，今日竞价，MJD31C批发/采购报价，MJD31C行情走势销售排行榜，MJD31C报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
MJD31C | SILICON POWER TRANSISTORS Complementary Power Transistors DPAK For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. Features • Lead Formed for Surface Mount Applications in Plastic Sleeves • Straight Lead Version in Plastic Sleeves (“1” Suffix) • Lead Formed Versi | ONSEMI 安森美半导体 |   | |
MJD31C | COMPLEMENTARY SILICON POWER TRANSISTORS DESCRIPTION The MJD31B and MJD31C and the MJD32B and MJD32C form complementary NPN-PNP pairs. They are manufactured using Epitaxial Base technology for cost-effective performance. ■ STMicroelectronics PREFERRED SALESTYPES ■ SURFACE-MOUNTING TO-252 (DPAK) POWER PACKAGE IN TAPE & REEL (SUFFIX | STMICROELECTRONICS 意法半导体 | | |
MJD31C | General Purpose Amplifier Low Speed Switching Applications NPN Epitaxial Silicon Transistor Features • General Purpose Amplifier • Low Speed Switching Applications • Load Formed for Surface Mount Application (No Suffix) • Straight Lead (I-PAK, “- I” Suffix) • Electrically Similar to Popular TIP31 and TIP31C | Fairchild 仙童半导体 | | |
MJD31C | NPN SURFACE MOUNT TRANSISTOR Features • BVCEO > 100V • IC = 3A high Continuous Collector Current • ICM = 5A Peak Pulse Current • Ideal for Power Switching or Amplification Applications • Complementary PNP Type: MJD32C • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” | DIODES 美台半导体 | | |
MJD31C | Complementary Power Transistors Features ● Lead Formed for Surface Mount Applications in Plastic Sleeves ● Pb-Free Packages are Available | KEXIN 科信电子 | | |
MJD31C | TRANSISTOR (NPN) FEATURES ● Designed for General Purpose Amplifier and Low Speed Switching Applications. ● Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) ● Straight Lead Version in Plastic Sleeves (“–1” Suffix) ● Lead Formed Version in 16 mm Tape and Reel (“T4” Suffix) ● Electri | FS | | |
MJD31C | Complementary Power Transistors Complementary Power Transistors DPAK For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. Features • Lead Formed for Surface Mount Applications in Plastic Sleeves • Straight Lead Version in Plastic Sleeves (“1” Suffix) • Lead Formed Versi | ONSEMI 安森美半导体 | | |
MJD31C | 3A , 100V NPN Plastic Encapsulated Transistor FEATURES • Designed for general • Excellent DC Current Gain Characteristics | SECOS 喜可士 | | |
MJD31C | Complementary Silicon Power Ttransistors DESCRIPTION It is intented for use in power amplif)ier and switching applications. | TGS | | |
MJD31C | Silicon NPN epitaxial planer Transistors Features • Halogen free available upon request by adding suffix -HF • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) • Epoxy meets UL 94 V-0 flammability rating • Moisture Sensitivity Level 1 • Electrically Similar to Popular TIP31 and TIP32 | MCC | | |
MJD31C | TO-251-3L Plastic-Encapsulate Transistors TRANSISTOR (NPN) FEATURES • Designed for General Purpose Amplifier and Low Speed Switching Applications. • Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) • Straight Lead Version in Plastic Sleeves (“–1” Suffix) • Lead Formed Version in 16 mm Tape and Reel (“T4” Suff | JIANGSU 长电科技 | | |
MJD31C | 100 V, 3 A NPN high power bipolar transistor 1. General description NPN high power bipolar transistor in a power DPAK, TO-252 (SOT428C) Surface-Mounted Device (SMD) plastic package. PNP complement: MJD32C 2. Features and benefits • High thermal power dissipation capability • High energy efficiency due to less heat generation • Elect | NEXPERIA 安世 | | |
MJD31C | Silicon NPN Power Transistor DESCRIPTION · Collector-Emitter Breakdown Voltage -V(BR)CEO= 100V(Min) · Collector-Emitter Saturation Voltage -VCE(sat):= 1.2V(Max) @IC= 3A ·Complement to Type MJD32C APPLICATIONS · Designed for low power audio amplifier and low-current, high-speed switching applications | ISC 无锡固电 | | |
MJD31C | Low voltage NPN power transistor Description The device is manufactured in planar technology with “base island” layout. The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage. Features ■ Surface-mounting TO-252 power package in tape and reel ■ Complementary to the PNP typ | STMICROELECTRONICS 意法半导体 | | |
MJD31C | Low voltage NPN power transistor Description The device is manufactured in Planar technology with “Base Island” layout. The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage. General features ■ This device is qualified for automotive application ■ Surface-mounting | STMICROELECTRONICS 意法半导体 | | |
MJD31C | Complementary Power Transistors 文件：135.34 Kbytes Page：10 Pages | ONSEMI 安森美半导体 | | |
MJD31C | Discrete and MOSFET components, analog & logic ICs 文件：11.62183 Mbytes Page：234 Pages | NEXPERIA 安世 | | |
MJD31C | isc Silicon NPN Power Transistors 文件：334.23 Kbytes Page：2 Pages | ISC 无锡固电 | | |
MJD31C | 100V NPN HIGH VOLTAGE TRANSISTOR 文件：372.99 Kbytes Page：7 Pages | DIODES 美台半导体 | | |
MJD31C | Complementary Power Transistors 文件：81.61 Kbytes Page：8 Pages | ONSEMI 安森美半导体 | | |
MJD31C | 封装/外壳：TO-252-3，DPak（2 引线 + 接片），SC-63 包装：散装 描述：TRANS NPN 100V 3A DPAK 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 | STMICROELECTRONICS 意法半导体 | | |
MJD31C | NPN, 100V, 3A, TO252 | DIODES 美台半导体 | | |
MJD31C | 3.0 A，100 V，NPN 双极功率晶体管 | ONSEMI 安森美半导体 | | |
MJD31C | 100 V, 3 A NPN high power bipolar transistor | NEXPERIA 安世 | | |
NPN SURFACE MOUNT TRANSISTOR Features • BVCEO > 100V • IC = 3A high Continuous Collector Current • ICM = 5A Peak Pulse Current • Ideal for Power Switching or Amplification Applications • Complementary PNP Type: MJD32C • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” | DIODES 美台半导体 | | ||
Complementary Power Transistors Complementary Power Transistors DPAK For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. Features • Lead Formed for Surface Mount Applications in Plastic Sleeves • Straight Lead Version in Plastic Sleeves (“1” Suffix) • Lead Formed Versi | ONSEMI 安森美半导体 | | ||
100 V, 3 A NPN high power bipolar transistor 1. General description NPN high power bipolar transistor in a power DPAK, TO-252 (SOT428C) Surface-Mounted Device (SMD) plastic package. PNP complement: MJD32CA 2. Features and benefits • High thermal power dissipation capability • High energy efficiency due to less heat generation • Elec | NEXPERIA 安世 | | ||
Complementary Power Transistors Complementary Power Transistors DPAK For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. Features • Lead Formed for Surface Mount Applications in Plastic Sleeves • Straight Lead Version in Plastic Sleeves (“1” Suffix) • Lead Formed Versi | ONSEMI 安森美半导体 | | ||
100 V, 3 A NPN high power bipolar transistor Features and benefits • High thermal power dissipation capability • High energy efficiency due to less heat generation • High current gain at VCE = 60 V • Electrically similar to popular MJD31 series • Low collector emitter saturation voltage • Fast switching speeds • Qualified according to | NEXPERIA 安世 | | ||
100 V, 3 A NPN high power bipolar transistor Features and benefits • High thermal power dissipation capability • High energy efficiency due to less heat generation • High current gain at VCE = 60 V • Electrically similar to popular MJD31 series • Low collector emitter saturation voltage • Fast switching speeds • Qualified according to | NEXPERIA 安世 | | ||
100V NPN HIGH VOLTAGE TRANSISTOR IN TO252 Description This Bipolar Junction Transistor (BJT) has been designed to meet the stringent requirements of Automotive Applications. Features • BVCEO > 100V • IC = 3A high Continuous Collector Current • ICM = 5A Peak Pulse Current • Ideal for Power Switching or Amplification Applications • C | DIODES 美台半导体 | | ||
100V NPN HIGH VOLTAGE TRANSISTOR IN TO252 Description This Bipolar Junction Transistor (BJT) has been designed to meet the stringent requirements of Automotive Applications. Features • BVCEO > 100V • IC = 3A high Continuous Collector Current • ICM = 5A Peak Pulse Current • Ideal for Power Switching or Amplification Applications • C | DIODES 美台半导体 | | ||
Complementary Power Transistors Complementary Power Transistors DPAK For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. Features • Lead Formed for Surface Mount Applications in Plastic Sleeves • Straight Lead Version in Plastic Sleeves (“1” Suffix) • Lead Formed Versi | ONSEMI 安森美半导体 | | ||
Low voltage NPN power transistor Description The device is manufactured in planar technology with “base island” layout. The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage. Features ■ Surface-mounting TO-252 power package in tape and reel ■ Complementary to the PNP typ | STMICROELECTRONICS 意法半导体 | | ||
Low voltage NPN power transistor Description The device is manufactured in Planar technology with “Base Island” layout. The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage. General features ■ This device is qualified for automotive application ■ Surface-mounting | STMICROELECTRONICS 意法半导体 | | ||
Complementary Power Transistors Complementary Power Transistors DPAK For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. Features • Lead Formed for Surface Mount Applications in Plastic Sleeves • Straight Lead Version in Plastic Sleeves (“1” Suffix) • Lead Formed Versi | ONSEMI 安森美半导体 | | ||
NPN Epitaxial Silicon Transistor NPN Epitaxial Silicon Transistor Features • General Purpose Amplifier • Low Speed Switching Applications • Load Formed for Surface Mount Application (No Suffix) • Straight Lead (I-PAK, “- I” Suffix) • Electrically Similar to Popular TIP31 and TIP31C | Fairchild 仙童半导体 | | ||
Silicon NPN epitaxial planer Transistors Features • Halogen free available upon request by adding suffix -HF • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) • Epoxy meets UL 94 V-0 flammability rating • Moisture Sensitivity Level 1 • Electrically Similar to Popular TIP31 and TIP32 | MCC | | ||
100V NPN HIGH VOLTAGE TRANSISTOR Description This Bipolar Junction Transistor (BJT) is designed to meet the stringent requirements of Automotive Applications. Features • BVCEO > 100V • IC = 3A high Continuous Collector Current • ICM = 5A Peak Pulse Current • Ideal for Power Switching or Amplification Applications • Complem | DIODES 美台半导体 | | ||
100V NPN HIGH VOLTAGE TRANSISTOR Description This Bipolar Junction Transistor (BJT) is designed to meet the stringent requirements of Automotive Applications. Features • BVCEO > 100V • IC = 3A high Continuous Collector Current • ICM = 5A Peak Pulse Current • Ideal for Power Switching or Amplification Applications • Complem | DIODES 美台半导体 | | ||
NPN Plastic Encapsulated Transistor 文件：78.27 Kbytes Page：1 Pages | SECOS 喜可士 | | ||
100V NPN HIGH VOLTAGE TRANSISTOR IN TO252 文件：314.68 Kbytes Page：7 Pages | DIODES 美台半导体 | | ||
100V NPN HIGH VOLTAGE TRANSISTOR 文件：372.99 Kbytes Page：7 Pages | DIODES 美台半导体 | | ||
Complementary Power Transistors 文件：81.61 Kbytes Page：8 Pages | ONSEMI 安森美半导体 | | ||
100V NPN HIGH VOLTAGE TRANSISTOR 文件：372.99 Kbytes Page：7 Pages | DIODES 美台半导体 | | ||
封装/外壳：TO-252-3，DPak（2 引线 + 接片），SC-63 包装：剪切带（CT）带盒（TB） 描述：TRANS NPN 100V 3A TO252 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 | DIODES 美台半导体 | | ||
Complementary Power Transistors 文件：81.61 Kbytes Page：8 Pages | ONSEMI 安森美半导体 | | ||
Complementary Power Transistors 文件：135.34 Kbytes Page：10 Pages | ONSEMI 安森美半导体 | | ||
Complementary Power Transistors 文件：100.84 Kbytes Page：10 Pages | ONSEMI 安森美半导体 | | ||
Discrete and MOSFET components, analog & logic ICs 文件：11.62183 Mbytes Page：234 Pages | NEXPERIA 安世 | | ||
Complementary Power Transistors 文件：81.61 Kbytes Page：8 Pages | ONSEMI 安森美半导体 | | ||
Complementary Power Transistors 文件：135.34 Kbytes Page：10 Pages | ONSEMI 安森美半导体 | | ||
Complementary Power Transistors 文件：100.84 Kbytes Page：10 Pages | ONSEMI 安森美半导体 | | ||
100V NPN HIGH VOLTAGE TRANSISTOR 文件：456.21 Kbytes Page：7 Pages | DIODES 美台半导体 | | ||
100V NPN HIGH VOLTAGE TRANSISTOR IN TO252 文件：316.5 Kbytes Page：7 Pages | DIODES 美台半导体 | | ||
100V NPN HIGH VOLTAGE TRANSISTOR 文件：456.21 Kbytes Page：7 Pages | DIODES 美台半导体 | | ||
100V NPN HIGH VOLTAGE TRANSISTOR 文件：456.21 Kbytes Page：7 Pages | DIODES 美台半导体 | | ||
Complementary Power Transistors 文件：81.61 Kbytes Page：8 Pages | ONSEMI 安森美半导体 | | ||
Complementary Power Transistors 文件：135.34 Kbytes Page：10 Pages | ONSEMI 安森美半导体 | | ||
Complementary Power Transistors 文件：81.61 Kbytes Page：8 Pages | ONSEMI 安森美半导体 | |
MJD31C产品属性
- 类型
描述
- 型号
MJD31C
- 功能描述
两极晶体管 - BJT NPN Gen Pur Switch
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
PNP 集电极—基极电压
- VCBO
集电极—发射极最大电压
- VCEO
- 40 V 发射极 - 基极电压
- VEBO
- 6 V
- 增益带宽产品fT
直流集电极/Base Gain hfe
- Min
100 A
- 安装风格
SMD/SMT
- 封装/箱体
PowerFLAT 2 x 2
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ON/安森美 |
24+ |
DPAK |
9600 |
原装现货,优势供应,支持实单! |
|||
ON(安森美) |
23+ |
25900 |
新到现货,只有原装 |
||||
ON |
24+ |
SOT-252 |
12500 |
绝对原装现货,价格低,欢迎询购! |
|||
ST/意法半导体 |
22+ |
TO-252-3 |
6000 |
原装正品现货 可开增值税发票 |
|||
FAIRCHILD |
24+ |
TO-251-3 |
36200 |
全新原装现货/假一罚百! |
|||
ON |
23+ |
TO-252 |
35000 |
公司常备大量原装现货可开13%增票！ |
|||
LISION |
2016+ |
SOT-252 |
3319 |
只做原装,假一罚十,公司可开17%增值税发票! |
|||
FAIRCHILD |
25+ |
TO252 |
18600 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
|||
ST(意法半导体) |
24+ |
TO-252 |
2669 |
原厂订货渠道,支持BOM配单一站式服务 |
|||
onsemi(安森美) |
25 |
TO-252-2 |
341 |
QQ询价 绝对原装正品 |
MJD31C芯片相关品牌
MJD31C规格书下载地址
MJD31C参数引脚图相关
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- MJD31CG
- MJD31C1
- MJD31B
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- MJD2955
- MJD29
- MJD253
- MJD243G
- MJD243
- MJD210G
- MJD210
- MJD200G
- MJD200
- MJD148
- MJD128
- MJD127G
- MJD127(-1,T4)
- MJD127
- MJD122I
- MJD122G
- MJD122(-1,T4)
- MJD122
- MJD117(-1,T4)
- MJD117
- MJD112(-1,T4)
- MJD112
- MJ921
- MJ920
- MJ901
- MJ9000
- MJ900
MJD31C数据表相关新闻
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