您好,欢迎来到114ic资料网！

芯片资料
  • 芯片资料
  • 库存查询
  • 行业新闻
  • 生产厂家
  • 替换型号
  • 晶体管

位置：首页 > IC中文资料第2940页 > MJD31C

MJD31C晶体管资料

  • MJD31C别名：MJD31C三极管、MJD31C晶体管、MJD31C晶体三极管

  • MJD31C生产厂家：韩国三星公司

  • MJD31C制作材料：

  • MJD31C性质：低频或音频放大 （LF）_功率放大 （PA）

  • MJD31C封装形式：贴片封装

  • MJD31C极限工作电压：

  • MJD31C最大电流允许值：3A

  • MJD31C最大工作频率：<1MHZ或未知

  • MJD31C引脚数：3

  • MJD31C最大耗散功率：15W

  • MJD31C放大倍数：

  • MJD31C图片代号：G-217

  • MJD31Cvtest：0

  • MJD31Chtest：999900

  • MJD31Catest：3

  • MJD31Cwtest：15

  • MJD31C代换 MJD31C用什么型号代替：

MJD31C价格

参考价格：￥0.5788

型号：MJD31C-13 品牌：Diodes 备注：这里有MJD31C多少钱，2024年最近7天走势，今日出价，今日竞价，MJD31C批发/采购报价，MJD31C行情走势销售排行榜，MJD31C报价。
型号 功能描述 生产厂家&企业 LOGO 操作
MJD31C

SILICON POWER TRANSISTORS

ComplementaryPowerTransistorsDPAKForSurfaceMountApplications Designedforgeneralpurposeamplifierandlowspeedswitchingapplications. Features •LeadFormedforSurfaceMountApplicationsinPlasticSleeves •StraightLeadVersioninPlasticSleeves(“1”Suffix) •LeadFormedVersi

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
MJD31C

COMPLEMENTARY SILICON POWER TRANSISTORS

DESCRIPTION TheMJD31BandMJD31CandtheMJD32BandMJD32CformcomplementaryNPN-PNPpairs.TheyaremanufacturedusingEpitaxialBasetechnologyforcost-effectiveperformance. ■STMicroelectronicsPREFERREDSALESTYPES ■SURFACE-MOUNTINGTO-252(DPAK)POWERPACKAGEINTAPE&REEL(SUFFIX

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体（ST）集团

STMICROELECTRONICS
MJD31C

General Purpose Amplifier Low Speed Switching Applications

NPNEpitaxialSiliconTransistor Features •GeneralPurposeAmplifier •LowSpeedSwitchingApplications •LoadFormedforSurfaceMountApplication(NoSuffix) •StraightLead(I-PAK,“-I”Suffix) •ElectricallySimilartoPopularTIP31andTIP31C

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild
MJD31C

NPN SURFACE MOUNT TRANSISTOR

Features •BVCEO>100V •IC=3AhighContinuousCollectorCurrent •ICM=5APeakPulseCurrent •IdealforPowerSwitchingorAmplificationApplications •ComplementaryPNPType:MJD32C •TotallyLead-Free&FullyRoHSCompliant(Notes1&2) •HalogenandAntimonyFree.“Green”

DIODESDiodes Incorporated

达尔科技

DIODES
MJD31C

Complementary Power Transistors

Features ●LeadFormedforSurfaceMountApplicationsinPlasticSleeves ●Pb-FreePackagesareAvailable

KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD

科信电子广东科信实业有限公司

KEXIN
MJD31C

TRANSISTOR (NPN)

FEATURES ●DesignedforGeneralPurposeAmplifierand LowSpeedSwitchingApplications. ●LeadFormedforSurfaceMountApplicationsinPlasticSleeves(NoSuffix) ●StraightLeadVersioninPlasticSleeves(“–1”Suffix) ●LeadFormedVersionin16mmTapeandReel(“T4”Suffix) ●Electri

FS

First Silicon Co., Ltd

FS
MJD31C

Complementary Power Transistors

ComplementaryPowerTransistorsDPAKForSurfaceMountApplications Designedforgeneralpurposeamplifierandlowspeedswitchingapplications. Features •LeadFormedforSurfaceMountApplicationsinPlasticSleeves •StraightLeadVersioninPlasticSleeves(“1”Suffix) •LeadFormedVersi

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
MJD31C

3A , 100V NPN Plastic Encapsulated Transistor

FEATURES •Designedforgeneral •ExcellentDCCurrentGainCharacteristics

SECOS

SeCoS Halbleitertechnologie GmbH

SECOS
MJD31C

Complementary Silicon Power Ttransistors

DESCRIPTION Itisintentedforuseinpoweramplif)ierandswitchingapplications.

TGS

Tiger Electronic Co.,Ltd

TGS
MJD31C

Silicon NPN epitaxial planer Transistors

Features •Halogenfreeavailableuponrequestbyaddingsuffix-HF •LeadFreeFinish/RoHSCompliant(PSuffixdesignatesRoHS Compliant.Seeorderinginformation) •EpoxymeetsUL94V-0flammabilityrating •MoistureSensitivityLevel1 •ElectricallySimilartoPopularTIP31andTIP32

MCCMicro Commercial Components

美微科美微科半导体公司

MCC
MJD31C

TO-251-3L Plastic-Encapsulate Transistors

TRANSISTOR(NPN) FEATURES •DesignedforGeneralPurposeAmplifierandLowSpeedSwitchingApplications. •LeadFormedforSurfaceMountApplicationsinPlasticSleeves(NoSuffix) •StraightLeadVersioninPlasticSleeves(“–1”Suffix) •LeadFormedVersionin16mmTapeandReel(“T4”Suff

JIANGSU

Jiangsu Changjiang Electronics Technology Co., Ltd

JIANGSU
MJD31C

100 V, 3 A NPN high power bipolar transistor

1.Generaldescription NPNhighpowerbipolartransistorinapowerDPAK,TO-252(SOT428C)Surface-MountedDevice (SMD)plasticpackage. PNPcomplement:MJD32C 2.Featuresandbenefits •Highthermalpowerdissipationcapability •Highenergyefficiencyduetolessheatgeneration •Elect

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

NEXPERIA
MJD31C

Low voltage NPN power transistor

Description Thedeviceismanufacturedinplanartechnologywith“baseisland”layout.Theresultingtransistorshowsexceptionalhighgainperformancecoupledwithverylowsaturationvoltage. Features ■Surface-mountingTO-252powerpackagein tapeandreel ■ComplementarytothePNPtyp

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体（ST）集团

STMICROELECTRONICS
MJD31C

Low voltage NPN power transistor

Description ThedeviceismanufacturedinPlanartechnologywith“BaseIsland”layout.Theresultingtransistorshowsexceptionalhighgainperformancecoupledwithverylowsaturationvoltage. Generalfeatures ■Thisdeviceisqualifiedforautomotiveapplication ■Surface-mounting

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体（ST）集团

STMICROELECTRONICS
MJD31C

Complementary Power Transistors

文件：135.34 Kbytes Page：10 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
MJD31C

isc Silicon NPN Power Transistors

文件：334.23 Kbytes Page：2 Pages

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
MJD31C

100V NPN HIGH VOLTAGE TRANSISTOR

文件：372.99 Kbytes Page：7 Pages

DIODESDiodes Incorporated

达尔科技

DIODES
MJD31C

Complementary Power Transistors

文件：81.61 Kbytes Page：8 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
MJD31C

封装/外壳：TO-252-3，DPak（2 引线 + 接片），SC-63 包装：散装 描述：TRANS NPN 100V 3A DPAK 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体（ST）集团

STMICROELECTRONICS
MJD31C-13

NPN SURFACE MOUNT TRANSISTOR

Features •BVCEO>100V •IC=3AhighContinuousCollectorCurrent •ICM=5APeakPulseCurrent •IdealforPowerSwitchingorAmplificationApplications •ComplementaryPNPType:MJD32C •TotallyLead-Free&FullyRoHSCompliant(Notes1&2) •HalogenandAntimonyFree.“Green”

DIODESDiodes Incorporated

达尔科技

DIODES
MJD31C1G

Complementary Power Transistors

ComplementaryPowerTransistorsDPAKForSurfaceMountApplications Designedforgeneralpurposeamplifierandlowspeedswitchingapplications. Features •LeadFormedforSurfaceMountApplicationsinPlasticSleeves •StraightLeadVersioninPlasticSleeves(“1”Suffix) •LeadFormedVersi

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
MJD31CA

100 V, 3 A NPN high power bipolar transistor

1.Generaldescription NPNhighpowerbipolartransistorinapowerDPAK,TO-252(SOT428C)Surface-MountedDevice (SMD)plasticpackage. PNPcomplement:MJD32CA 2.Featuresandbenefits •Highthermalpowerdissipationcapability •Highenergyefficiencyduetolessheatgeneration •Elec

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

NEXPERIA
MJD31CG

Complementary Power Transistors

ComplementaryPowerTransistorsDPAKForSurfaceMountApplications Designedforgeneralpurposeamplifierandlowspeedswitchingapplications. Features •LeadFormedforSurfaceMountApplicationsinPlasticSleeves •StraightLeadVersioninPlasticSleeves(“1”Suffix) •LeadFormedVersi

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
MJD31CH-Q

100 V, 3 A NPN high power bipolar transistor

Featuresandbenefits •Highthermalpowerdissipationcapability •Highenergyefficiencyduetolessheatgeneration •HighcurrentgainatVCE=60V •ElectricallysimilartopopularMJD31series •Lowcollectoremittersaturationvoltage •Fastswitchingspeeds •Qualifiedaccordingto

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

NEXPERIA
MJD31CH-QJ

100 V, 3 A NPN high power bipolar transistor

Featuresandbenefits •Highthermalpowerdissipationcapability •Highenergyefficiencyduetolessheatgeneration •HighcurrentgainatVCE=60V •ElectricallysimilartopopularMJD31series •Lowcollectoremittersaturationvoltage •Fastswitchingspeeds •Qualifiedaccordingto

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

NEXPERIA
MJD31CQ

100V NPN HIGH VOLTAGE TRANSISTOR IN TO252

Description ThisBipolarJunctionTransistor(BJT)hasbeendesignedtomeetthestringentrequirementsofAutomotiveApplications. Features •BVCEO>100V •IC=3AhighContinuousCollectorCurrent •ICM=5APeakPulseCurrent •IdealforPowerSwitchingorAmplificationApplications •C

DIODESDiodes Incorporated

达尔科技

DIODES
MJD31CQ-13

100V NPN HIGH VOLTAGE TRANSISTOR IN TO252

Description ThisBipolarJunctionTransistor(BJT)hasbeendesignedtomeetthestringentrequirementsofAutomotiveApplications. Features •BVCEO>100V •IC=3AhighContinuousCollectorCurrent •ICM=5APeakPulseCurrent •IdealforPowerSwitchingorAmplificationApplications •C

DIODESDiodes Incorporated

达尔科技

DIODES
MJD31CRLG

Complementary Power Transistors

ComplementaryPowerTransistorsDPAKForSurfaceMountApplications Designedforgeneralpurposeamplifierandlowspeedswitchingapplications. Features •LeadFormedforSurfaceMountApplicationsinPlasticSleeves •StraightLeadVersioninPlasticSleeves(“1”Suffix) •LeadFormedVersi

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
MJD31CT4

Low voltage NPN power transistor

Description Thedeviceismanufacturedinplanartechnologywith“baseisland”layout.Theresultingtransistorshowsexceptionalhighgainperformancecoupledwithverylowsaturationvoltage. Features ■Surface-mountingTO-252powerpackagein tapeandreel ■ComplementarytothePNPtyp

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体（ST）集团

STMICROELECTRONICS
MJD31CT4-A

Low voltage NPN power transistor

Description ThedeviceismanufacturedinPlanartechnologywith“BaseIsland”layout.Theresultingtransistorshowsexceptionalhighgainperformancecoupledwithverylowsaturationvoltage. Generalfeatures ■Thisdeviceisqualifiedforautomotiveapplication ■Surface-mounting

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体（ST）集团

STMICROELECTRONICS
MJD31CT4G

Complementary Power Transistors

ComplementaryPowerTransistorsDPAKForSurfaceMountApplications Designedforgeneralpurposeamplifierandlowspeedswitchingapplications. Features •LeadFormedforSurfaceMountApplicationsinPlasticSleeves •StraightLeadVersioninPlasticSleeves(“1”Suffix) •LeadFormedVersi

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
MJD31CTF

NPN Epitaxial Silicon Transistor

NPNEpitaxialSiliconTransistor Features •GeneralPurposeAmplifier •LowSpeedSwitchingApplications •LoadFormedforSurfaceMountApplication(NoSuffix) •StraightLead(I-PAK,“-I”Suffix) •ElectricallySimilartoPopularTIP31andTIP31C

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild
MJD31C-TP

Silicon NPN epitaxial planer Transistors

Features •Halogenfreeavailableuponrequestbyaddingsuffix-HF •LeadFreeFinish/RoHSCompliant(PSuffixdesignatesRoHS Compliant.Seeorderinginformation) •EpoxymeetsUL94V-0flammabilityrating •MoistureSensitivityLevel1 •ElectricallySimilartoPopularTIP31andTIP32

MCCMicro Commercial Components

美微科美微科半导体公司

MCC
MJD31CUQ

100V NPN HIGH VOLTAGE TRANSISTOR

Description ThisBipolarJunctionTransistor(BJT)isdesignedtomeetthestringentrequirementsofAutomotiveApplications. Features •BVCEO>100V •IC=3AhighContinuousCollectorCurrent •ICM=5APeakPulseCurrent •IdealforPowerSwitchingorAmplificationApplications •Complem

DIODESDiodes Incorporated

达尔科技

DIODES
MJD31CUQ-13

100V NPN HIGH VOLTAGE TRANSISTOR

Description ThisBipolarJunctionTransistor(BJT)isdesignedtomeetthestringentrequirementsofAutomotiveApplications. Features •BVCEO>100V •IC=3AhighContinuousCollectorCurrent •ICM=5APeakPulseCurrent •IdealforPowerSwitchingorAmplificationApplications •Complem

DIODESDiodes Incorporated

达尔科技

DIODES
MJD31C_15

NPN Plastic Encapsulated Transistor

文件：78.27 Kbytes Page：1 Pages

SECOS

SeCoS Halbleitertechnologie GmbH

SECOS
MJD31C_15

100V NPN HIGH VOLTAGE TRANSISTOR IN TO252

文件：314.68 Kbytes Page：7 Pages

DIODESDiodes Incorporated

达尔科技

DIODES
MJD31C_18

100V NPN HIGH VOLTAGE TRANSISTOR

文件：372.99 Kbytes Page：7 Pages

DIODESDiodes Incorporated

达尔科技

DIODES
MJD31C1

Complementary Power Transistors

文件：81.61 Kbytes Page：8 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
MJD31C-13

100V NPN HIGH VOLTAGE TRANSISTOR

文件：372.99 Kbytes Page：7 Pages

DIODESDiodes Incorporated

达尔科技

DIODES
MJD31C-13

封装/外壳：TO-252-3，DPak（2 引线 + 接片），SC-63 包装：剪切带（CT）带盒（TB） 描述：TRANS NPN 100V 3A TO252 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

PAMDiodes Incorporated

龙鼎威

PAM
MJD31C1G

Complementary Power Transistors

文件：81.61 Kbytes Page：8 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
MJD31C1G

Complementary Power Transistors

文件：135.34 Kbytes Page：10 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
MJD31C1G

Complementary Power Transistors

文件：100.84 Kbytes Page：10 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
MJD31CG

Complementary Power Transistors

文件：81.61 Kbytes Page：8 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
MJD31CG

Complementary Power Transistors

文件：135.34 Kbytes Page：10 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
MJD31CG

Complementary Power Transistors

文件：100.84 Kbytes Page：10 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
MJD31CQ

100V NPN HIGH VOLTAGE TRANSISTOR

文件：456.21 Kbytes Page：7 Pages

DIODESDiodes Incorporated

达尔科技

DIODES
MJD31CQ_15

100V NPN HIGH VOLTAGE TRANSISTOR IN TO252

文件：316.5 Kbytes Page：7 Pages

DIODESDiodes Incorporated

达尔科技

DIODES
MJD31CQ_16

100V NPN HIGH VOLTAGE TRANSISTOR

文件：456.21 Kbytes Page：7 Pages

DIODESDiodes Incorporated

达尔科技

DIODES
MJD31CQ-13

100V NPN HIGH VOLTAGE TRANSISTOR

文件：456.21 Kbytes Page：7 Pages

DIODESDiodes Incorporated

达尔科技

DIODES
MJD31CRL

Complementary Power Transistors

文件：81.61 Kbytes Page：8 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
MJD31CRLG

Complementary Power Transistors

文件：135.34 Kbytes Page：10 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
MJD31CRLG

Complementary Power Transistors

文件：81.61 Kbytes Page：8 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
MJD31CRLG

Complementary Power Transistors

文件：100.84 Kbytes Page：10 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
MJD31CT4

Complementary Power Transistors

文件：81.61 Kbytes Page：8 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
MJD31CT4G

Complementary Power Transistors

文件：100.84 Kbytes Page：10 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
MJD31CT4G

Complementary Power Transistors

文件：81.61 Kbytes Page：8 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
MJD31CT4G

Complementary Power Transistors

文件：135.34 Kbytes Page：10 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

MJD31C产品属性

  • 类型

    描述

  • 型号

    MJD31C

  • 功能描述

    两极晶体管 - BJT NPN Gen Pur Switch

  • RoHS

    否

  • 制造商

    STMicroelectronics

  • 晶体管极性

    PNP 集电极—基极电压

  • VCBO

    集电极—发射极最大电压

  • VCEO

    - 40 V 发射极 - 基极电压

  • VEBO

    - 6 V

  • 增益带宽产品fT

    直流集电极/Base Gain hfe

  • Min

    100 A

  • 安装风格

    SMD/SMT

  • 封装/箱体

    PowerFLAT 2 x 2

MJD31C供应商更多...

更新时间：2024-5-1 11:04:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
京海半导体(深圳)有限公司
MJD31CT4G
ON/安森美
22+
TO252
98900
只做原装，支持实单，来电咨询。
询价
深圳市坤融电子科技有限公司
MJD31CITU
FAIRCHILD/仙童
2019+全新原装正品
TO-251
8950
BOM配单专家,发货快,价格低
询价
佛山市芯光达科技有限公司
MJD31CAJ
安世(Nexperia)
23+
TO-252
12500
进口原装假一赔十可开增值票
询价
深圳市金启宁科技有限公司
MJD31CT4G
ON/安森美
21+
TO252
50000
只做原装,支持实单!
询价
深圳市宏捷佳电子科技有限公司
MJD31CTF_SBDD001A
FAIRCHILD
23+
TO-252
12300
全新原装真实库存含13点增值税票!
询价
深圳市恒意法电子有限公司
MJD31CT4G
0N进口
21+
TO-252
33307
专营原装正品现货,当天发货,可开发票!
询价
深圳市芯祺盛科技有限公司
MJD31CG
ON/安森美
2105+
TO-252
10053
询价
深圳市龙瀚电子有限公司
MJD31CT4G
ON
16+/17+
TO-252
3500
原装正品现货供应56
询价
深圳市正纳电子有限公司
MJD31CT4G
ON
22+
TO-252
10000
原装正品可支持验货,欢迎咨询
询价
深圳市宇创芯科技有限公司
MJD31CT4G
ON/安森美
22+
DPAK
9600
原装现货,优势供应,支持实单!
询价

MJD31C芯片相关品牌

  • ARIES
  • Bourns
  • FERROXCUBE
  • Fuji
  • KOA
  • MEANWELL
  • PREDIP
  • RFE
  • SMC
  • TRUMPOWER
  • WPI
  • YANGJIE

MJD31C规格书下载地址

MJD31C参数引脚图相关

MJD31C数据表相关新闻

DdatasheetPDF页码索引

新数据|IC资料索引|IC关键词|IC库存|IC中文资料|关于我们|联系我们

Copyright © 2003-2024 www.114ic.cn All Rights Reserved 网站备案: 粤ICP备05011613号 粤公网安备 44030402000933号

声明：本站所有资料均来自互联网及网友提供，仅供学习和研究使用，无任何商业目的，版权归原作如有侵权请联系QQ：303638005，本站马上更正

字母索引：ABCDEFGHIJKLMNOPQRSTUVWXYZ0123456789

深圳市市场监督管理局企业主体身份公示