丝印代码：MJD31CA；100 V, 3 A NPN high power bipolar transistor

1. General description NPN high power bipolar transistor in a power DPAK, TO-252 (SOT428C) Surface-Mounted Device (SMD) plastic package. PNP complement: MJD32CA 2. Features and benefits • High thermal power dissipation capability • High energy efficiency due to less heat generation • Elec

100 V, 3 A NPN high power bipolar transistor

NPN high power bipolar transistor in a power DPAK, TO-252 (SOT428C) Surface-Mounted Device (SMD) plastic package.\n PNP complement: MJD32CA • High thermal power dissipation capability\n• High energy efficiency due to less heat generation\n• Electrically similar to popular MJD31 series\n• Low collector emitter saturation voltage\n• Fast switching speeds\n• AEC-Q101 qualified;

Discrete and MOSFET components, analog & logic ICs

文件：11.62183 Mbytes Page：234 Pages

Discrete and MOSFET components, analog & logic ICs

文件：11.62178 Mbytes Page：234 Pages

丝印代码：MJD31CAH；100 V, 3 A NPN high power bipolar transistor

Features and benefits • High thermal power dissipation capability • High energy efficiency due to less heat generation • High current gain at VCE = 60 V • Electrically similar to popular MJD31 series • Low collector emitter saturation voltage • Fast switching speeds • Qualified according to

封装/外壳：TO-252-3，DPak（2 引线 + 接片），SC-63 包装：剪切带（CT）带盒（TB） 描述：MJD31CA/SOT428/DPAK 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个