MJD3055晶体管资料

  • MJD3055别名:MJD3055三极管、MJD3055晶体管、MJD3055晶体三极管

  • MJD3055生产厂家:韩国三星公司

  • MJD3055制作材料:Darl

  • MJD3055性质:低频或音频放大 (LF)

  • MJD3055封装形式:贴片封装

  • MJD3055极限工作电压

  • MJD3055最大电流允许值:10A

  • MJD3055最大工作频率:>4MHZ

  • MJD3055引脚数:3

  • MJD3055最大耗散功率:20W

  • MJD3055放大倍数

  • MJD3055图片代号:G-127

  • MJD3055vtest:0

  • MJD3055htest:4000100

  • MJD3055atest:10

  • MJD3055wtest:20

  • MJD3055代换 MJD3055用什么型号代替

MJD3055价格

参考价格:¥1.9865

型号:MJD3055T4 品牌:STMICROELECTRONICS 备注:这里有MJD3055多少钱,2024年最近7天走势,今日出价,今日竞价,MJD3055批发/采购报价,MJD3055行情走势销售排行榜,MJD3055报价。
型号 功能描述 生产厂家&企业 LOGO 操作
MJD3055

ComplementaryPowerTransistors

MJD2955(PNP) MJD3055(NPN) SILICONPOWERTRANSISTORS10AMPERES60VOLTS,20WATTS DPAKForSurfaceMountApplications Designedforgeneralpurposeamplifierandlowspeedswitchingapplications. Features •LeadFormedforSurfaceMountApplicationsinPlasticSleeves(NoSuffix) •Strai

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
MJD3055

COMPLEMENTARYSILICONPOWERTRANSISTORS

DESCRIPTION TheMJD2955andMJD3055formcomplementaryPNP-NPNpairs.TheyaremanufacturedusingEpitaxialBasetechnologyforcost-effectiveperformance. ■STMicroelectronicsPREFERRED SALESTYPES ■SURFACE-MOUNTINGTO-252(DPAK) POWERPACKAGEINTAPE&REEL (SUFFIXT4)

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS
MJD3055

GeneralPurposeAmplifierLowSpeedSwitchingApplicationsD-PAKforSurfaceMountApplications

GeneralPurposeAmplifier LowSpeedSwitchingApplications D-PAKforSurfaceMountApplications •LeadFormedforSurfaceMountApplications(NoSuffix) •StraightLead(I-PAK,“-I“Suffix) •ElectricallySimilartoPopularMJE3055T •DCCurrentGainSpecifiedto10A •HighCurrentGain-

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild
MJD3055

iscSiliconNPNPowerTransistor

DESCRIPTION •ExcellentSafeOperatingArea •Collector-EmitterSaturationVoltage-:VCE(sat)=1.1V(Max)@IC=4A •ComplementtoTypeMJD2955 •DPAKforSurfaceMountApplications •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation APPLICATIONS •Designed

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
MJD3055

TO-251-3LPlastic-EncapsulateTransistors

TRANSISTOR(NPN) FEATURES ●DesignedforGeneralPurposeAmplifierandLowSpeedSwitchingApplications ●ElectricallySimiartoMJE3055 ●DCCurrentGainSpecifiedto10A

JIANGSU

Jiangsu Changjiang Electronics Technology Co., Ltd

JIANGSU
MJD3055

TO-252-2LPlastic-EncapsulateTransistors

FEATURES DesignedforGeneralPurposeAmplifierdanLowSpeed SwitchingApplications ElectricallySimiartoMJE3055 DCCurrentGainSpecifiedto10Amperes

DGNJDZNanjing International Group Co

南晶电子东莞市南晶电子有限公司

DGNJDZ
MJD3055

封装/外壳:TO-252-3,DPak(2 引线 + 接片),SC-63 包装:托盘 描述:TRANS NPN 60V 10A DPAK 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
MJD3055

ComplementaryPowerTransistors

文件:138.37 Kbytes Page:7 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
MJD3055

TRANSISTOR(NPN)

文件:80.34 Kbytes Page:1 Pages

FS

First Silicon Co., Ltd

FS
MJD3055

ComplementaryPowerTransistorsDPAKForSurfaceMountApplications

文件:78.33 Kbytes Page:6 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
MJD3055

ComplementaryPowerTransistors

文件:123.1 Kbytes Page:6 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
MJD3055

COMPLEMENTARYPOWERTRANSISTORS

文件:188.18 Kbytes Page:6 Pages

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

ComplementaryPowerTransistors

ComplementaryPowerTransistors DPAKForSurfaceMountApplications Designedforgeneralpurposeamplifierandlowspeedswitchingapplications. Features •LeadFormedforSurfaceMountApplicationsinPlasticSleeves(NoSuffix) •StraightLeadVersioninPlasticSleeves(“−1”Suff

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

ComplementaryPowerTransistors

ComplementaryPowerTransistors DPAKForSurfaceMountApplications Designedforgeneralpurposeamplifierandlowspeedswitchingapplications. Features •LeadFormedforSurfaceMountApplicationsinPlasticSleeves(NoSuffix) •StraightLeadVersioninPlasticSleeves(“−1”Suff

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

ComplementaryPowerTransistorsDPAKForSurfaceMountApplications

文件:78.33 Kbytes Page:6 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

ComplementaryPowerTransistors

文件:123.1 Kbytes Page:6 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

ComplementaryPowerTransistors

文件:138.37 Kbytes Page:7 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

封装/外壳:TO-252-3,DPak(2 引线 + 接片),SC-63 包装:卷带(TR) 描述:TRANS NPN 60V 10A DPAK 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

ComplementaryPowerTransistorsDPAKForSurfaceMountApplications

文件:78.33 Kbytes Page:6 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

ComplementaryPowerTransistors

文件:123.1 Kbytes Page:6 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

ComplementaryPowerTransistorsDPAKForSurfaceMountApplications

文件:78.33 Kbytes Page:6 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

ComplementaryPowerTransistors

文件:138.37 Kbytes Page:7 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

CustomerSpecification

Construction 1)Component11X1HOOKUP a)Conductor18(16/30)AWGTinnedCopper0.047 b)Insulation0.016Wall,Nom.PVC0.079+/-0.002 (1)Print ALPHAWIREE163869-*RUAWMSTYLES1569105C OR100780C300VVW-1IEC60332-118AWG ORCRUTR-6490CFT1CEROHS {0}*=FactoryCode

ALPHAWIREAlpha Wire

阿尔法电线

ALPHAWIRE

MULTIPLEXEDTWO-WIREHALL-EFFECTSENSORICs

MULTIPLEXEDTWO-WIREHALL-EFFECTSENSORICs TheUGN3055UHall-effectsensorisadigitalmagneticsensingICcapableofcommunicatingoveratwo-wirepower/signalbus.Usingasequentialaddressingscheme,thedevicerespondstoasignalonthebusandreturnsthediagnosticstatusoftheIC,as

Allegro

Allegro MicroSystems

Allegro

WASHERSANDNUTS

[KEYSTONE] FIBRESHOULDERWASHERS HEXMACHINENUTS NYLONSHOULDERWASHER/BUSHINGS BLINDCAPTIVENUTS-PRESSFIT METRICMACHINENUTS

etc2List of Unclassifed Manufacturers

etc2未分类制造商

etc2

CustomerSpecification

文件:70.18 Kbytes Page:3 Pages

ALPHAWIREAlpha Wire

阿尔法电线

ALPHAWIRE

N-Channel30-V(D-S)MOSFET

文件:959.93 Kbytes Page:8 Pages

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

VBSEMI

MJD3055产品属性

  • 类型

    描述

  • 型号

    MJD3055

  • 功能描述

    两极晶体管 - BJT 10A 60V 20W NPN

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    PNP 集电极—基极电压

  • VCBO

    集电极—发射极最大电压

  • VCEO

    - 40 V 发射极 - 基极电压

  • VEBO

    - 6 V

  • 增益带宽产品fT

    直流集电极/Base Gain hfe

  • Min

    100 A

  • 安装风格

    SMD/SMT

  • 封装/箱体

    PowerFLAT 2 x 2

更新时间:2024-5-1 13:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ONN
23+
N/A
7500
原装原装原装哈
长电
21+
TO252
50000
全新原装正品现货,支持订货
23+
N/A
85200
正品授权货源可靠
ON
DPAK
2210
1835
只做原装正品,现货
ONSemi
24+
DPAK
42384
只做原装 有挂有货 假一赔十
CJ/长电
22+
TO-252
9600
原装现货,优势供应,支持实单!
ON
2020+
TO-252
8000
只做自己库存,全新原装进口正品假一赔百,可开13%增
FAIRCHILD/仙童
2019+全新原装正品
TO252
8950
BOM配单专家,发货快,价格低
MOTOROLA/摩托罗拉
23+
TO-252
50000
全新原装正品现货,支持订货
FAIRCHILD
23+
TO-252
12300
全新原装真实库存含13点增值税票!

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