General Purpose Amplifier Low Speed Switching Applications D-PAK for Surface Mount Applications

General Purpose Amplifier Low Speed Switching Applications D-PAK for Surface Mount Applications • Lead Formed for Surface Mount Applications (No Suffix) • Straight Lead (I-PAK, “ -I “ Suffix) • Electrically Similar to Popular MJE3055T • DC Current Gain Specified to 10A • High Current Gain -

Complementary Power Transistors

MJD2955 (PNP) MJD3055 (NPN) SILICON POWER TRANSISTORS 10 AMPERES 60 VOLTS, 20 WATTS DPAK For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. Features • Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) • Strai

isc Silicon NPN Power Transistor

DESCRIPTION • Excellent Safe Operating Area • Collector-Emitter Saturation Voltage- : VCE(sat)= 1.1 V(Max)@ IC = 4A • Complement to Type MJD2955 • DPAK for Surface Mount Applications • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • Designed

Silicon NPN Power Transistor

DESCRIPTION · Collector-Emitter Breakdown Voltage -V(BR)CEO= 60V(Min) · Collector-Emitter Saturation Voltage -VCE(sat):= 1.1V(Max) @IC= 4A ·Complement to Type MJD2955 APPLICATIONS · Designed for low power audio amplifier and low-current, high-speed switching applications

Silicon NPN Power Transistor

DESCRIPTION · Collector-Emitter Breakdown Voltage -V(BR)CEO= 60V(Min) · Collector-Emitter Saturation Voltage -VCE(sat):= 1.1V(Max) @IC= 4A ·Complement to Type MJD2955 APPLICATIONS · Designed for low power audio amplifier and low-current, high-speed switching applications

TO-251-3L Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURES ● Designed for General Purpose Amplifier an d Low Speed Switching Applications   ● Electrically Simiar to MJE3055 ● DC Current Gain Specified to 10A

COMPLEMENTARY SILICON POWER TRANSISTORS

DESCRIPTION The MJD2955 and MJD3055 form complementary PNP-NPN pairs. They are manufactured using Epitaxial Base technology for cost-effective performance. ■ STMicroelectronics PREFERRED SALESTYPES ■ SURFACE-MOUNTING TO-252 (DPAK) POWER PACKAGE IN TAPE & REEL (SUFFIX T4)

TO-252-2L Plastic-Encapsulate Transistors

FEATURES Designed for General Purpose Amplifier da nLow Speed Switching Applications Electrically Simiar to MJE3055 DC Current Gain Specified to10 Amperes

TRANSISTOR (NPN)

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COMPLEMENTARY POWER TRANSISTORS

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封装/外壳：TO-252-3，DPak（2 引线 + 接片），SC-63 包装：托盘 描述：TRANS NPN 60V 10A DPAK 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

60V,10A,Medium Power NPN Bipolar Transistor

晶体管

10 A，60 V，NPN 双极功率晶体管

Complementary Power Transistors DPAK For Surface Mount Applications

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Complementary Power Transistors

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Complementary Power Transistors

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Silicon NPN Power Transistor

DESCRIPTION · Collector-Emitter Breakdown Voltage -V(BR)CEO= 60V(Min) · Collector-Emitter Saturation Voltage -VCE(sat):= 1.1V(Max) @IC= 4A ·Complement to Type MJD2955 APPLICATIONS · Designed for low power audio amplifier and low-current, high-speed switching applications

Silicon NPN Power Transistor

DESCRIPTION · Collector-Emitter Breakdown Voltage -V(BR)CEO= 60V(Min) · Collector-Emitter Saturation Voltage -VCE(sat):= 1.1V(Max) @IC= 4A ·Complement to Type MJD2955 APPLICATIONS · Designed for low power audio amplifier and low-current, high-speed switching applications

Complementary Power Transistors

Complementary Power Transistors DPAK For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. Features • Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) • Straight Lead Version in Plastic Sleeves (“−1” Suff

Complementary Power Transistors

Complementary Power Transistors DPAK For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. Features • Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) • Straight Lead Version in Plastic Sleeves (“−1” Suff

Complementary Power Transistors

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Complementary Power Transistors DPAK For Surface Mount Applications

文件：78.33 Kbytes Page：6 Pages

Complementary Power Transistors

文件：123.1 Kbytes Page：6 Pages

封装/外壳：TO-252-3，DPak（2 引线 + 接片），SC-63 包装：卷带（TR） 描述：TRANS NPN 60V 10A DPAK 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

Complementary Power Transistors DPAK For Surface Mount Applications

文件：78.33 Kbytes Page：6 Pages

Complementary Power Transistors DPAK For Surface Mount Applications

文件：78.33 Kbytes Page：6 Pages

Complementary Power Transistors

文件：138.37 Kbytes Page：7 Pages

Complementary Power Transistors

文件：123.1 Kbytes Page：6 Pages

MULTIPLEXED TWO-WIRE HALL-EFFECT SENSOR ICs

MULTIPLEXED TWO-WIRE HALL-EFFECT SENSOR ICs The UGN3055U Hall-effect sensor is a digital magnetic sensing IC capable of communicating over a two-wire power/signal bus. Using a sequential addressing scheme, the device responds to a signal on the bus and returns the diagnostic status of the IC, as

Customer Specification

Construction 1) Component 1 1 X 1 HOOKUP a) Conductor 18 (16/30) AWG Tinned Copper 0.047 b) Insulation 0.016 Wall, Nom. PVC 0.079+/- 0.002 (1) Print ALPHA WIRE E163869-* RU AWM STYLES 1569 105C OR 1007 80C 300V VW-1 IEC 60332-1 18 AWG OR CRU TR-64 90C FT1 CE ROHS {0} * = Factory Code

WASHERS AND NUTS

[KEYSTONE] FIBRE SHOULDER WASHERS HEX MACHINE NUTS NYLON SHOULDER WASHER/BUSHINGS BLIND CAPTIVE NUTS - PRESS FIT METRIC MACHINE NUTS

Customer Specification

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N-Channel 30-V (D-S) MOSFET

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