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MJD3055晶体管资料

  • MJD3055别名：MJD3055三极管、MJD3055晶体管、MJD3055晶体三极管

  • MJD3055生产厂家：韩国三星公司

  • MJD3055制作材料：Darl

  • MJD3055性质：低频或音频放大 （LF）

  • MJD3055封装形式：贴片封装

  • MJD3055极限工作电压：

  • MJD3055最大电流允许值：10A

  • MJD3055最大工作频率：>4MHZ

  • MJD3055引脚数：3

  • MJD3055最大耗散功率：20W

  • MJD3055放大倍数：

  • MJD3055图片代号：G-127

  • MJD3055vtest：0

  • MJD3055htest：4000100

  • MJD3055atest：10

  • MJD3055wtest：20

  • MJD3055代换 MJD3055用什么型号代替：

MJD3055价格

参考价格：￥1.9865

型号：MJD3055T4 品牌：STMICROELECTRONICS 备注：这里有MJD3055多少钱，2026年最近7天走势，今日出价，今日竞价，MJD3055批发/采购报价，MJD3055行情走势销售排行榜，MJD3055报价。
型号 功能描述 生产厂家 企业 LOGO 操作
MJD3055

Complementary Power Transistors

MJD2955 (PNP) MJD3055 (NPN) SILICON POWER TRANSISTORS 10 AMPERES 60 VOLTS, 20 WATTS DPAK For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. Features • Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) • Strai

ONSEMI

安森美半导体

MJD3055

COMPLEMENTARY SILICON POWER TRANSISTORS

DESCRIPTION The MJD2955 and MJD3055 form complementary PNP-NPN pairs. They are manufactured using Epitaxial Base technology for cost-effective performance. ■ STMicroelectronics PREFERRED SALESTYPES ■ SURFACE-MOUNTING TO-252 (DPAK) POWER PACKAGE IN TAPE & REEL (SUFFIX T4)

STMICROELECTRONICS

意法半导体

MJD3055

General Purpose Amplifier Low Speed Switching Applications D-PAK for Surface Mount Applications

General Purpose Amplifier Low Speed Switching Applications D-PAK for Surface Mount Applications • Lead Formed for Surface Mount Applications (No Suffix) • Straight Lead (I-PAK, “ -I “ Suffix) • Electrically Similar to Popular MJE3055T • DC Current Gain Specified to 10A • High Current Gain -

FAIRCHILD

仙童半导体

MJD3055

isc Silicon NPN Power Transistor

DESCRIPTION • Excellent Safe Operating Area • Collector-Emitter Saturation Voltage- : VCE(sat)= 1.1 V(Max)@ IC = 4A • Complement to Type MJD2955 • DPAK for Surface Mount Applications • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • Designed

ISC

无锡固电

MJD3055

TO-251-3L Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURES ● Designed for General Purpose Amplifier an d Low Speed Switching Applications   ● Electrically Simiar to MJE3055 ● DC Current Gain Specified to 10A

JIANGSU

长电科技

MJD3055

丝印代码：MJD3055XXXX；TO-252-2L Plastic-Encapsulate Transistors

FEATURES Designed for General Purpose Amplifier da nLow Speed Switching Applications Electrically Simiar to MJE3055 DC Current Gain Specified to10 Amperes

DGNJDZ

南晶电子

MJD3055

Silicon NPN Power Transistor

DESCRIPTION · Collector-Emitter Breakdown Voltage -V(BR)CEO= 60V(Min) · Collector-Emitter Saturation Voltage -VCE(sat):= 1.1V(Max) @IC= 4A ·Complement to Type MJD2955 APPLICATIONS · Designed for low power audio amplifier and low-current, high-speed switching applications

ISC

无锡固电

MJD3055

Silicon NPN Power Transistor

DESCRIPTION · Collector-Emitter Breakdown Voltage -V(BR)CEO= 60V(Min) · Collector-Emitter Saturation Voltage -VCE(sat):= 1.1V(Max) @IC= 4A ·Complement to Type MJD2955 APPLICATIONS · Designed for low power audio amplifier and low-current, high-speed switching applications

ISC

无锡固电

MJD3055

10 A，60 V，NPN 双极功率晶体管

The Bipolar Power Transistor is designed for general purpose amplifier and low speed switching applications. The MJD2955 (PNP) and MJD3055 (NPN) are complementary devices. • Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix)\n• Straight Lead Version in Plastic Sleeves (\"-1\" Suffix)\n• Lead Formed Version Available in 16 mm Tape and Reel (\"T4\" Suffix)\n• Electrically Similar to MJE2955 and MJE3055\n• DC Current Gain Specified to 10 Amperes\n•;

ONSEMI

安森美半导体

MJD3055

60V,10A,Medium Power NPN Bipolar Transistor

GALAXY

银河微电

MJD3055

晶体管

JSCJ

长晶科技

MJD3055

封装/外壳：TO-252-3，DPak（2 引线 + 接片），SC-63 包装：托盘 描述：TRANS NPN 60V 10A DPAK 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

ONSEMI

安森美半导体

MJD3055

Complementary Power Transistors

文件：138.37 Kbytes Page：7 Pages

ONSEMI

安森美半导体

MJD3055

Complementary Power Transistors DPAK For Surface Mount Applications

文件：78.33 Kbytes Page：6 Pages

ONSEMI

安森美半导体

MJD3055

Complementary Power Transistors

文件：123.1 Kbytes Page：6 Pages

ONSEMI

安森美半导体

MJD3055

TRANSISTOR (NPN)

文件：80.34 Kbytes Page：1 Pages

FS

MJD3055

COMPLEMENTARY POWER TRANSISTORS

文件：188.18 Kbytes Page：6 Pages

STMICROELECTRONICS

意法半导体

MJD3055-251

Silicon NPN Power Transistor

DESCRIPTION · Collector-Emitter Breakdown Voltage -V(BR)CEO= 60V(Min) · Collector-Emitter Saturation Voltage -VCE(sat):= 1.1V(Max) @IC= 4A ·Complement to Type MJD2955 APPLICATIONS · Designed for low power audio amplifier and low-current, high-speed switching applications

ISC

无锡固电

MJD3055-252

Silicon NPN Power Transistor

DESCRIPTION · Collector-Emitter Breakdown Voltage -V(BR)CEO= 60V(Min) · Collector-Emitter Saturation Voltage -VCE(sat):= 1.1V(Max) @IC= 4A ·Complement to Type MJD2955 APPLICATIONS · Designed for low power audio amplifier and low-current, high-speed switching applications

ISC

无锡固电

MJD3055G

Complementary Power Transistors

Complementary Power Transistors DPAK For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. Features • Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) • Straight Lead Version in Plastic Sleeves (“−1” Suff

ONSEMI

安森美半导体

MJD3055T4G

Complementary Power Transistors

Complementary Power Transistors DPAK For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. Features • Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) • Straight Lead Version in Plastic Sleeves (“−1” Suff

ONSEMI

安森美半导体

MJD3055G

Complementary Power Transistors DPAK For Surface Mount Applications

文件：78.33 Kbytes Page：6 Pages

ONSEMI

安森美半导体

MJD3055G

Complementary Power Transistors

文件：123.1 Kbytes Page：6 Pages

ONSEMI

安森美半导体

MJD3055G

Complementary Power Transistors

文件：138.37 Kbytes Page：7 Pages

ONSEMI

安森美半导体

MJD3055T4

Complementary Power Transistors DPAK For Surface Mount Applications

文件：78.33 Kbytes Page：6 Pages

ONSEMI

安森美半导体

MJD3055T4

封装/外壳：TO-252-3，DPak（2 引线 + 接片），SC-63 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS NPN 60V 10A DPAK 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

STMICROELECTRONICS

意法半导体

MJD3055T4G

Complementary Power Transistors

文件：138.37 Kbytes Page：7 Pages

ONSEMI

安森美半导体

MJD3055T4G

Complementary Power Transistors

文件：123.1 Kbytes Page：6 Pages

ONSEMI

安森美半导体

MJD3055T4G

Complementary Power Transistors DPAK For Surface Mount Applications

文件：78.33 Kbytes Page：6 Pages

ONSEMI

安森美半导体

MJE3055T

POWER TRANSISTORS(10A,60V,75W)

COMPLEMENTARY SILICON POWER TRANSISTORS.

MOSPEC

统懋

MMFT3055E

MEDIUM POWER TMOS FET 1.7 AMP 60 VOLTS

N–Channel Enhancement Mode Silicon Gate TMOS E–FET™ SOT–223 for Surface Mount This advanced E–FET is a TMOS Medium Power MOSFET designed to withstand high energy in the avalanche and commutation modes. This new energy efficient device also offers a drain–to–source diode with a fast recovery time

MOTOROLA

摩托罗拉

MTP3055V

TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on) = 0.15 OHM

TMOS V™ Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on)= 0.15 OHM TMOSV is a new technology designed to achieve an on–resistance area product about one–half that of standard MOSFETs. This new technology more than doubles t

MOTOROLA

摩托罗拉

TIP3055

POWER TRANSISTORS COMPLEMENTARY SILICON

TIP2955 PNP TIP3055 NPN 15 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 60 VOLTS 90 WATTS . . . designed for general–purpose switching and amplifier applications. • DC Current Gain — hFE = 20–70 @ IC = 4.0 Adc • Collector–Emitter Saturation Voltage — VCE(sat) = 1.1 Vdc (Max) @

MOTOROLA

摩托罗拉

TIP3055

POWER TRANSISTORS(15A,60V,90W)

15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60 VOLTS 90 WATTS ..designed for use int general-purpose amplifier and switching application NPN -> TIP3055 PNP -> TIP2955

MOSPEC

统懋

MJD3055产品属性

  • 类型

    描述

  • Package：

    DPAK

  • Grade：

    Industrial

  • Transistor Polarity：

    NPN

  • Collector-Emitter Voltage_max(V)：

    60

  • Collector-Base Voltage_max(V)：

    70

  • Collector Current_max(A)：

    10

  • Collector Current_abs_max(A)：

    3

  • Dc Current Gain_min：

    10

  • Dc Current Gain_max：

    50

  • Test Condition for hFE (IC)：

    3

  • Test Condition for hFE (VCE)_spec(V)：

    4

  • VCE(sat)_max(V)：

    1.2

  • Test Condition for VCE(sat) - IC：

    3

  • Test Condition for VCE(sat) - IB_spec(mA)：

    375

MJD3055供应商更多...

更新时间：2026-5-14 22:59:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市高捷芯城科技有限公司
MJD3055RLG
onsemi(安森美)
24+
TO-252
2176
原厂订货渠道,支持BOM配单一站式服务
询价
中天科工半导体（深圳）有限公司
MJD3055
原装
25+
TO-252
20300
原装特价MJD3055即刻询购立享优惠#长期有货
询价
深圳市华跃芯科技有限公司
MJD3055T4G
onsemi安森美
25+
TO-252(DPAK)
2500
终端可免费供样,支持BOM配单!
询价
深圳市毅创腾电子科技有限公司
MJD3055
ON
23+
TO-251
3260
绝对全新原装!优势供货渠道!特价!请放心订购!
询价
深圳市芯球通科技有限公司
MJD3055T4G
ON(安森美)
23+
TO-252-2(DPAK)
12055
公司只做原装正品,假一赔十
询价
深圳市科恒伟业电子有限公司
MJD3055
CJ/长晶
2450+
TO252
8850
只做原装正品假一赔十为客户做到零风险!!
询价
深圳市凯睿晟科技有限公司
MJD3055
CJ/长电
21+
TO-252
30000
百域芯优势 实单必成 可开13点增值税发票
询价
深圳市芯皇电子有限公司
MJD3055
ON
22+
TO-220-3
50000
原装正品假一罚十,代理渠道价格优
询价
标准国际(香港)有限公司
MJD3055
MOTOROLA
25+
5
公司优势库存 热卖中!
询价
深圳市中联芯电子有限公司
MJD3055T4G
ONSemi
25+
DPAK
42384
只做原装 有挂有货 假一赔十
询价

MJD3055芯片相关品牌

MJD3055规格书下载地址

MJD3055参数引脚图相关

MJD3055数据表相关新闻

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