位置:首页 > IC中文资料第2183页 > MJD3055G
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
MJD3055G | Complementary Power Transistors Complementary Power Transistors DPAK For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. Features • Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) • Straight Lead Version in Plastic Sleeves (“−1” Suff | ONSEMI 安森美半导体 | ||
MJD3055G | Complementary Power Transistors DPAK For Surface Mount Applications 文件:78.33 Kbytes Page:6 Pages | ONSEMI 安森美半导体 | ||
MJD3055G | Complementary Power Transistors 文件:123.1 Kbytes Page:6 Pages | ONSEMI 安森美半导体 | ||
MJD3055G | Complementary Power Transistors 文件:138.37 Kbytes Page:7 Pages | ONSEMI 安森美半导体 | ||
MJD3055G | 封装/外壳:TO-252-3,DPak(2 引线 + 接片),SC-63 包装:托盘 描述:TRANS NPN 60V 10A DPAK 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个 | ONSEMI 安森美半导体 | ||
POWER TRANSISTORS(10A,60V,75W) COMPLEMENTARY SILICON POWER TRANSISTORS. | MOSPEC 统懋 | |||
MEDIUM POWER TMOS FET 1.7 AMP 60 VOLTS N–Channel Enhancement Mode Silicon Gate TMOS E–FET™ SOT–223 for Surface Mount This advanced E–FET is a TMOS Medium Power MOSFET designed to withstand high energy in the avalanche and commutation modes. This new energy efficient device also offers a drain–to–source diode with a fast recovery time | MOTOROLA 摩托罗拉 | |||
TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on) = 0.15 OHM TMOS V™ Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on)= 0.15 OHM TMOSV is a new technology designed to achieve an on–resistance area product about one–half that of standard MOSFETs. This new technology more than doubles t | MOTOROLA 摩托罗拉 | |||
POWER TRANSISTORS COMPLEMENTARY SILICON TIP2955 PNP TIP3055 NPN 15 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 60 VOLTS 90 WATTS . . . designed for general–purpose switching and amplifier applications. • DC Current Gain — hFE = 20–70 @ IC = 4.0 Adc • Collector–Emitter Saturation Voltage — VCE(sat) = 1.1 Vdc (Max) @ | MOTOROLA 摩托罗拉 | |||
POWER TRANSISTORS(15A,60V,90W) 15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60 VOLTS 90 WATTS ..designed for use int general-purpose amplifier and switching application NPN -> TIP3055 PNP -> TIP2955 | MOSPEC 统懋 |
MJD3055G产品属性
- 类型
描述
- 型号
MJD3055G
- 功能描述
两极晶体管 - BJT 10A 60V 20W NPN
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
PNP 集电极—基极电压
- VCBO
集电极—发射极最大电压
- VCEO
- 40 V 发射极 - 基极电压
- VEBO
- 6 V
- 增益带宽产品fT
直流集电极/Base Gain hfe
- Min
100 A
- 安装风格
SMD/SMT
- 封装/箱体
PowerFLAT 2 x 2
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ON |
2025+ |
TO-252-3 |
3577 |
全新原厂原装产品、公司现货销售 |
|||
ON/安森美 |
22+ |
TO-252 |
97437 |
||||
ON |
23+ |
TO-252 |
11846 |
一级代理商现货批发,原装正品,假一罚十 |
|||
ONSEMI/安森美 |
24+ |
TO-252 |
43200 |
郑重承诺只做原装进口现货 |
|||
ON/安森美 |
24+ |
TO-252 |
9600 |
原装现货,优势供应,支持实单! |
|||
ON |
22+ |
TO-251 |
3000 |
原装正品,支持实单 |
|||
ONS |
25+ |
DPAK |
20000 |
普通 |
|||
ONSemiconductor |
24+ |
NA |
3000 |
进口原装正品优势供应 |
|||
ON/安森美 |
2022+ |
DPAK |
12888 |
原厂代理 终端免费提供样品 |
|||
ON |
23+ |
TO-252 |
694 |
正规渠道,只有原装! |
MJD3055G规格书下载地址
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