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型号 功能描述 生产厂家 企业 LOGO 操作
MJD3055G

Complementary Power Transistors

Complementary Power Transistors DPAK For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. Features • Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) • Straight Lead Version in Plastic Sleeves (“−1” Suff

ONSEMI

安森美半导体

MJD3055G

Complementary Power Transistors DPAK For Surface Mount Applications

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ONSEMI

安森美半导体

MJD3055G

Complementary Power Transistors

文件:123.1 Kbytes Page:6 Pages

ONSEMI

安森美半导体

MJD3055G

Complementary Power Transistors

文件:138.37 Kbytes Page:7 Pages

ONSEMI

安森美半导体

MJD3055G

封装/外壳:TO-252-3,DPak(2 引线 + 接片),SC-63 包装:托盘 描述:TRANS NPN 60V 10A DPAK 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

ONSEMI

安森美半导体

POWER TRANSISTORS(10A,60V,75W)

COMPLEMENTARY SILICON POWER TRANSISTORS.

MOSPEC

统懋

MEDIUM POWER TMOS FET 1.7 AMP 60 VOLTS

N–Channel Enhancement Mode Silicon Gate TMOS E–FET™ SOT–223 for Surface Mount This advanced E–FET is a TMOS Medium Power MOSFET designed to withstand high energy in the avalanche and commutation modes. This new energy efficient device also offers a drain–to–source diode with a fast recovery time

MOTOROLA

摩托罗拉

TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on) = 0.15 OHM

TMOS V™ Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on)= 0.15 OHM TMOSV is a new technology designed to achieve an on–resistance area product about one–half that of standard MOSFETs. This new technology more than doubles t

MOTOROLA

摩托罗拉

POWER TRANSISTORS COMPLEMENTARY SILICON

TIP2955 PNP TIP3055 NPN 15 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 60 VOLTS 90 WATTS . . . designed for general–purpose switching and amplifier applications. • DC Current Gain — hFE = 20–70 @ IC = 4.0 Adc • Collector–Emitter Saturation Voltage — VCE(sat) = 1.1 Vdc (Max) @

MOTOROLA

摩托罗拉

POWER TRANSISTORS(15A,60V,90W)

15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60 VOLTS 90 WATTS ..designed for use int general-purpose amplifier and switching application NPN -> TIP3055 PNP -> TIP2955

MOSPEC

统懋

MJD3055G产品属性

  • 类型

    描述

  • 型号

    MJD3055G

  • 功能描述

    两极晶体管 - BJT 10A 60V 20W NPN

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    PNP 集电极—基极电压

  • VCBO

    集电极—发射极最大电压

  • VCEO

    - 40 V 发射极 - 基极电压

  • VEBO

    - 6 V

  • 增益带宽产品fT

    直流集电极/Base Gain hfe

  • Min

    100 A

  • 安装风格

    SMD/SMT

  • 封装/箱体

    PowerFLAT 2 x 2

更新时间:2026-5-20 10:46:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ON
2025+
TO-252-3
3577
全新原厂原装产品、公司现货销售
ON/安森美
22+
TO-252
97437
ON
23+
TO-252
11846
一级代理商现货批发,原装正品,假一罚十
ONSEMI/安森美
24+
TO-252
43200
郑重承诺只做原装进口现货
ON/安森美
24+
TO-252
9600
原装现货,优势供应,支持实单!
ON
22+
TO-251
3000
原装正品,支持实单
ONS
25+
DPAK
20000
普通
ONSemiconductor
24+
NA
3000
进口原装正品优势供应
ON/安森美
2022+
DPAK
12888
原厂代理 终端免费提供样品
ON
23+
TO-252
694
正规渠道,只有原装!

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