High Linearity Cellular-Band MMIC Mixer

Product Description The MH205 is a passive GaAs MESFET mixer that provides high dynamic range performance in a low cost SOIC-8 package. Its robustness and ease of use make it an ideal candidate for the core of any RFID reader application. It is compliant with EPC and ISO standards. WJ’s MH205 use

GaAs Gain Block芯片

• 工作频率 (GHz) DC-4 \n\n• 增益(dB） 13 \n\n• 噪声系 数(dB) 5.5 \n\n• OP1dB (dBm) 17.5 \n\n• 输入/输出回 波损耗(dB) -17/-18 \n\n• 电流(mA) 71 \n\n• 封装 DIE/DFN \n\n• 替代型号 ERA-6+ ;

High Linearity Cellular-Band MMIC Mixer

Product Description The MH205A is a passive GaAs MESFET mixer that provides high dynamic range performance in a low-cost lead-free/green/RoHS-compliant SOIC-8 package. WJ’s MH205A uses patented techniques to realize +35 dBm Input IP3 at an LO drive level of +17 dBm and can be used for upconvertin

High Linearity Cellular-Band MMIC Mixer

Product Description The MH205A is a passive GaAs MESFET mixer that provides high dynamic range performance in a low-cost lead-free/green/RoHS-compliant SOIC-8 package. WJ’s MH205A uses patented techniques to realize +35 dBm Input IP3 at an LO drive level of +17 dBm and can be used for upconvertin

High Linearity Cellular-Band MMIC Mixer

Product Description The MH205A is a passive GaAs MESFET mixer that provides high dynamic range performance in a low-cost lead-free/green/RoHS-compliant SOIC-8 package. WJ’s MH205A uses patented techniques to realize +35 dBm Input IP3 at an LO drive level of +17 dBm and can be used for upconvertin

High Linearity Cellular-Band MMIC Mixer

Product Description The MH205 is a passive GaAs MESFET mixer that provides high dynamic range performance in a low cost SOIC-8 package. Its robustness and ease of use make it an ideal candidate for the core of any RFID reader application. It is compliant with EPC and ISO standards. WJ’s MH205 use

High Linearity Cellular-Band MMIC Mixer

Product Description The MH205 is a passive GaAs MESFET mixer that provides high dynamic range performance in a low cost SOIC-8 package. Its robustness and ease of use make it an ideal candidate for the core of any RFID reader application. It is compliant with EPC and ISO standards. WJ’s MH205 use

High Linearity Cellular-Band MMIC Mixer

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Lightning Surge Protectors for Electronics Equipment M-RESTER

文件：106.75 Kbytes Page：3 Pages

High Linearity Cellular-Band MMIC Mixer

文件：192.45 Kbytes Page：4 Pages

High Linearity Cellular-Band MMIC Mixer

文件：192.45 Kbytes Page：4 Pages

High Linearity Cellular-Band MMIC Mixer

文件：192.45 Kbytes Page：4 Pages

Wide Input, 2W Ultra-Miniature DC/DC Converters

Wide Input, 2W Ultra-Miniature DC/DC Converters

文件：400.67 Kbytes Page：2 Pages

Wide Input, 2W Ultra-Miniature DC/DC Converters

文件：400.67 Kbytes Page：2 Pages

Wide Input, 2W Ultra-Miniature DC/DC Converters

Wide Input, 2W Ultra-Miniature DC/DC Converters

文件：400.67 Kbytes Page：2 Pages

Wide Input, 2W Ultra-Miniature DC/DC Converters

文件：400.67 Kbytes Page：2 Pages

Wide Input, 2W Ultra-Miniature DC/DC Converters

文件：400.67 Kbytes Page：2 Pages

Wide Input, 2W Ultra-Miniature DC/DC Converters

文件：400.67 Kbytes Page：2 Pages

Wide Input, 2W Ultra-Miniature DC/DC Converters

文件：400.67 Kbytes Page：2 Pages

N-channel enhancement mode vertical D-MOS transistor

DESCRIPTION N-channel enhancement mode vertical D-MOS transistor in a SOT223 envelope, intended for use as a line current interruptor in telephone sets and for applications in relay, high-speed and line transformer drivers. FEATURES • Direct interface to C-MOS, TTL, etc. • High-speed switching

POWER TRANSISTORS(2.5A,1300-1500V,36W)

HORIZONTAL DEFLECTION TRANSISTOR 2.5 AMPERE POWER TRANSISTORS 1300-1500 VOLTS 36 WATTS

SMALL OUTLINE OPTOISOLATORS TRANSISTOR OUTPUT

These devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector, in a surface mountable, small outline, plastic package. They are ideally suited for high density applications, and eliminate the need for through–the–board mounti

SCHOTTKY BARRIER RECTIFIERS(2.0A,20-60V)

Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry features epitaxial construction with oxide passivation and metal overly contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes.

Alternate Source/ Second Source Photodiodes

PRODUCT DESCRIPTION Large area planar silicon photodiode in a waterclear, cast epoxy sidelooker, similar in outline to the TO-92 package. These diodes exhibit low dark current under reverse bias and fast speed of response.